JP6239312B2 - 発光素子 - Google Patents

発光素子 Download PDF

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Publication number
JP6239312B2
JP6239312B2 JP2013170153A JP2013170153A JP6239312B2 JP 6239312 B2 JP6239312 B2 JP 6239312B2 JP 2013170153 A JP2013170153 A JP 2013170153A JP 2013170153 A JP2013170153 A JP 2013170153A JP 6239312 B2 JP6239312 B2 JP 6239312B2
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JP
Japan
Prior art keywords
layer
light emitting
support member
conductive support
disposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2013170153A
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English (en)
Japanese (ja)
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JP2014042026A (ja
JP2014042026A5 (enExample
Inventor
ジョン・ファニ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Innotek Co Ltd
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LG Innotek Co Ltd
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Publication of JP2014042026A publication Critical patent/JP2014042026A/ja
Publication of JP2014042026A5 publication Critical patent/JP2014042026A5/ja
Application granted granted Critical
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Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H10H20/8162—Current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8314—Electrodes characterised by their shape extending at least partially onto an outer side surface of the bodies

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  • Led Devices (AREA)
JP2013170153A 2012-08-21 2013-08-20 発光素子 Expired - Fee Related JP6239312B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2012-0091021 2012-08-21
KR1020120091021A KR101886156B1 (ko) 2012-08-21 2012-08-21 발광소자

Publications (3)

Publication Number Publication Date
JP2014042026A JP2014042026A (ja) 2014-03-06
JP2014042026A5 JP2014042026A5 (enExample) 2016-08-12
JP6239312B2 true JP6239312B2 (ja) 2017-11-29

Family

ID=49000850

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013170153A Expired - Fee Related JP6239312B2 (ja) 2012-08-21 2013-08-20 発光素子

Country Status (5)

Country Link
US (1) US8952416B2 (enExample)
EP (1) EP2701216B1 (enExample)
JP (1) JP6239312B2 (enExample)
KR (1) KR101886156B1 (enExample)
CN (1) CN103633221B (enExample)

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Publication number Priority date Publication date Assignee Title
KR101886156B1 (ko) * 2012-08-21 2018-09-11 엘지이노텍 주식회사 발광소자
DE102013103079A1 (de) * 2013-03-26 2014-10-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
DE102013107531A1 (de) * 2013-07-16 2015-01-22 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
JP2015056647A (ja) * 2013-09-13 2015-03-23 株式会社東芝 窒化物半導体発光装置
KR102163987B1 (ko) * 2014-05-30 2020-10-12 엘지이노텍 주식회사 발광소자
KR102164087B1 (ko) 2014-06-10 2020-10-12 엘지이노텍 주식회사 발광소자 및 이를 구비한 발광소자 패키지
KR102237148B1 (ko) * 2014-11-07 2021-04-07 엘지이노텍 주식회사 발광소자 제조방법
KR102441311B1 (ko) * 2015-04-20 2022-09-08 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자
KR102374268B1 (ko) * 2015-09-04 2022-03-17 삼성전자주식회사 발광소자 패키지
US11901397B2 (en) 2019-05-14 2024-02-13 Seoul Viosys Co., Ltd. LED chip having fan-out structure and manufacturing method of the same
JP7636347B2 (ja) * 2019-05-14 2025-02-26 ソウル バイオシス カンパニー リミテッド 発光パッケージ及び表示装置
MX2021013717A (es) 2019-05-14 2021-12-10 Seoul Viosys Co Ltd Chip led y metodo de manufactura del mismo.
US11756980B2 (en) 2019-05-14 2023-09-12 Seoul Viosys Co., Ltd. LED chip package and manufacturing method of the same
US11855121B2 (en) 2019-05-14 2023-12-26 Seoul Viosys Co., Ltd. LED chip and manufacturing method of the same

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JP3136672B2 (ja) * 1991-07-16 2001-02-19 豊田合成株式会社 窒化ガリウム系化合物半導体発光素子
TWI422044B (zh) * 2005-06-30 2014-01-01 克立公司 封裝發光裝置之晶片尺度方法及經晶片尺度封裝之發光裝置
CN100452460C (zh) * 2006-05-29 2009-01-14 金芃 通孔垂直结构的半导体芯片及其制造方法
CN100446288C (zh) * 2006-08-01 2008-12-24 金芃 通孔垂直结构的半导体芯片及其制造方法
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KR100992776B1 (ko) * 2008-11-14 2010-11-05 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
JP5286045B2 (ja) * 2008-11-19 2013-09-11 スタンレー電気株式会社 半導体発光素子の製造方法
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KR100999695B1 (ko) * 2009-02-16 2010-12-08 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
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KR101039999B1 (ko) * 2010-02-08 2011-06-09 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR100999798B1 (ko) * 2010-02-11 2010-12-08 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR100986560B1 (ko) * 2010-02-11 2010-10-07 엘지이노텍 주식회사 발광소자 및 그 제조방법
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KR100999784B1 (ko) * 2010-02-23 2010-12-08 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
JP5197654B2 (ja) * 2010-03-09 2013-05-15 株式会社東芝 半導体発光装置及びその製造方法
KR101039879B1 (ko) * 2010-04-12 2011-06-09 엘지이노텍 주식회사 발광소자 및 그 제조방법
KR101014071B1 (ko) * 2010-04-15 2011-02-10 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법, 발광 소자 패키지 및 조명 시스템
KR101020963B1 (ko) * 2010-04-23 2011-03-09 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
JP5356312B2 (ja) * 2010-05-24 2013-12-04 株式会社東芝 半導体発光装置
JP5449039B2 (ja) * 2010-06-07 2014-03-19 株式会社東芝 半導体発光装置及びその製造方法
KR101719623B1 (ko) * 2010-09-07 2017-03-24 엘지이노텍 주식회사 발광소자
KR101114191B1 (ko) * 2010-09-17 2012-03-13 엘지이노텍 주식회사 발광소자
JP4778107B1 (ja) * 2010-10-19 2011-09-21 有限会社ナプラ 発光デバイス、及び、その製造方法
KR101707118B1 (ko) 2010-10-19 2017-02-15 엘지이노텍 주식회사 발광소자 및 그 발광 소자의 제조 방법
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CN102593113B (zh) * 2011-01-10 2015-04-01 展晶科技(深圳)有限公司 发光二极管封装结构
JP4989773B1 (ja) * 2011-05-16 2012-08-01 株式会社東芝 半導体発光素子
KR101830719B1 (ko) * 2011-09-01 2018-02-21 엘지이노텍 주식회사 발광 소자
KR101886156B1 (ko) * 2012-08-21 2018-09-11 엘지이노텍 주식회사 발광소자

Also Published As

Publication number Publication date
JP2014042026A (ja) 2014-03-06
KR101886156B1 (ko) 2018-09-11
US8952416B2 (en) 2015-02-10
EP2701216B1 (en) 2018-10-03
US20140054543A1 (en) 2014-02-27
CN103633221B (zh) 2017-10-24
EP2701216A2 (en) 2014-02-26
EP2701216A3 (en) 2015-03-04
CN103633221A (zh) 2014-03-12
KR20140025025A (ko) 2014-03-04

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