KR101886156B1 - 발광소자 - Google Patents

발광소자 Download PDF

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Publication number
KR101886156B1
KR101886156B1 KR1020120091021A KR20120091021A KR101886156B1 KR 101886156 B1 KR101886156 B1 KR 101886156B1 KR 1020120091021 A KR1020120091021 A KR 1020120091021A KR 20120091021 A KR20120091021 A KR 20120091021A KR 101886156 B1 KR101886156 B1 KR 101886156B1
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KR
South Korea
Prior art keywords
layer
conductive
light emitting
disposed
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020120091021A
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English (en)
Korean (ko)
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KR20140025025A (ko
Inventor
정환희
Original Assignee
엘지이노텍 주식회사
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Application filed by 엘지이노텍 주식회사 filed Critical 엘지이노텍 주식회사
Priority to KR1020120091021A priority Critical patent/KR101886156B1/ko
Priority to US13/971,383 priority patent/US8952416B2/en
Priority to JP2013170153A priority patent/JP6239312B2/ja
Priority to EP13181120.0A priority patent/EP2701216B1/en
Priority to CN201310367059.XA priority patent/CN103633221B/zh
Publication of KR20140025025A publication Critical patent/KR20140025025A/ko
Application granted granted Critical
Publication of KR101886156B1 publication Critical patent/KR101886156B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H10H20/8162—Current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8314—Electrodes characterised by their shape extending at least partially onto an outer side surface of the bodies

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  • Led Devices (AREA)
KR1020120091021A 2012-08-21 2012-08-21 발광소자 Expired - Fee Related KR101886156B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020120091021A KR101886156B1 (ko) 2012-08-21 2012-08-21 발광소자
US13/971,383 US8952416B2 (en) 2012-08-21 2013-08-20 Light emitting device
JP2013170153A JP6239312B2 (ja) 2012-08-21 2013-08-20 発光素子
EP13181120.0A EP2701216B1 (en) 2012-08-21 2013-08-21 Light emitting device
CN201310367059.XA CN103633221B (zh) 2012-08-21 2013-08-21 发光器件

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020120091021A KR101886156B1 (ko) 2012-08-21 2012-08-21 발광소자

Publications (2)

Publication Number Publication Date
KR20140025025A KR20140025025A (ko) 2014-03-04
KR101886156B1 true KR101886156B1 (ko) 2018-09-11

Family

ID=49000850

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020120091021A Expired - Fee Related KR101886156B1 (ko) 2012-08-21 2012-08-21 발광소자

Country Status (5)

Country Link
US (1) US8952416B2 (enExample)
EP (1) EP2701216B1 (enExample)
JP (1) JP6239312B2 (enExample)
KR (1) KR101886156B1 (enExample)
CN (1) CN103633221B (enExample)

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* Cited by examiner, † Cited by third party
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KR101886156B1 (ko) * 2012-08-21 2018-09-11 엘지이노텍 주식회사 발광소자
DE102013103079A1 (de) * 2013-03-26 2014-10-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
DE102013107531A1 (de) * 2013-07-16 2015-01-22 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
JP2015056647A (ja) * 2013-09-13 2015-03-23 株式会社東芝 窒化物半導体発光装置
KR102163987B1 (ko) * 2014-05-30 2020-10-12 엘지이노텍 주식회사 발광소자
KR102164087B1 (ko) 2014-06-10 2020-10-12 엘지이노텍 주식회사 발광소자 및 이를 구비한 발광소자 패키지
KR102237148B1 (ko) * 2014-11-07 2021-04-07 엘지이노텍 주식회사 발광소자 제조방법
KR102441311B1 (ko) * 2015-04-20 2022-09-08 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자
KR102374268B1 (ko) * 2015-09-04 2022-03-17 삼성전자주식회사 발광소자 패키지
US11901397B2 (en) 2019-05-14 2024-02-13 Seoul Viosys Co., Ltd. LED chip having fan-out structure and manufacturing method of the same
JP7636347B2 (ja) * 2019-05-14 2025-02-26 ソウル バイオシス カンパニー リミテッド 発光パッケージ及び表示装置
MX2021013717A (es) 2019-05-14 2021-12-10 Seoul Viosys Co Ltd Chip led y metodo de manufactura del mismo.
US11756980B2 (en) 2019-05-14 2023-09-12 Seoul Viosys Co., Ltd. LED chip package and manufacturing method of the same
US11855121B2 (en) 2019-05-14 2023-12-26 Seoul Viosys Co., Ltd. LED chip and manufacturing method of the same

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US20110193123A1 (en) 2010-02-11 2011-08-11 Ji Hyung Moon Light emitting device, light emitting device package and lighting system
JP2012089846A (ja) 2010-10-19 2012-05-10 Lg Innotek Co Ltd 発光素子及び該発光素子を含む映像表示装置

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Publication number Priority date Publication date Assignee Title
US20110193123A1 (en) 2010-02-11 2011-08-11 Ji Hyung Moon Light emitting device, light emitting device package and lighting system
JP2012089846A (ja) 2010-10-19 2012-05-10 Lg Innotek Co Ltd 発光素子及び該発光素子を含む映像表示装置

Also Published As

Publication number Publication date
JP2014042026A (ja) 2014-03-06
US8952416B2 (en) 2015-02-10
EP2701216B1 (en) 2018-10-03
US20140054543A1 (en) 2014-02-27
JP6239312B2 (ja) 2017-11-29
CN103633221B (zh) 2017-10-24
EP2701216A2 (en) 2014-02-26
EP2701216A3 (en) 2015-03-04
CN103633221A (zh) 2014-03-12
KR20140025025A (ko) 2014-03-04

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