CN103633221B - 发光器件 - Google Patents

发光器件 Download PDF

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Publication number
CN103633221B
CN103633221B CN201310367059.XA CN201310367059A CN103633221B CN 103633221 B CN103633221 B CN 103633221B CN 201310367059 A CN201310367059 A CN 201310367059A CN 103633221 B CN103633221 B CN 103633221B
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CN
China
Prior art keywords
layer
electrode
light emitting
support member
semiconductor layer
Prior art date
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CN201310367059.XA
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English (en)
Chinese (zh)
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CN103633221A (zh
Inventor
丁焕熙
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou Liyu Semiconductor Co ltd
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LG Innotek Co Ltd
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Publication of CN103633221A publication Critical patent/CN103633221A/zh
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Publication of CN103633221B publication Critical patent/CN103633221B/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H10H20/8162—Current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8314—Electrodes characterised by their shape extending at least partially onto an outer side surface of the bodies

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  • Led Devices (AREA)
CN201310367059.XA 2012-08-21 2013-08-21 发光器件 Active CN103633221B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2012-0091021 2012-08-21
KR1020120091021A KR101886156B1 (ko) 2012-08-21 2012-08-21 발광소자

Publications (2)

Publication Number Publication Date
CN103633221A CN103633221A (zh) 2014-03-12
CN103633221B true CN103633221B (zh) 2017-10-24

Family

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Family Applications (1)

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CN201310367059.XA Active CN103633221B (zh) 2012-08-21 2013-08-21 发光器件

Country Status (5)

Country Link
US (1) US8952416B2 (enExample)
EP (1) EP2701216B1 (enExample)
JP (1) JP6239312B2 (enExample)
KR (1) KR101886156B1 (enExample)
CN (1) CN103633221B (enExample)

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DE102013103079A1 (de) * 2013-03-26 2014-10-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
DE102013107531A1 (de) * 2013-07-16 2015-01-22 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
JP2015056647A (ja) * 2013-09-13 2015-03-23 株式会社東芝 窒化物半導体発光装置
KR102163987B1 (ko) * 2014-05-30 2020-10-12 엘지이노텍 주식회사 발광소자
KR102164087B1 (ko) 2014-06-10 2020-10-12 엘지이노텍 주식회사 발광소자 및 이를 구비한 발광소자 패키지
KR102237148B1 (ko) * 2014-11-07 2021-04-07 엘지이노텍 주식회사 발광소자 제조방법
KR102441311B1 (ko) * 2015-04-20 2022-09-08 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자
KR102374268B1 (ko) * 2015-09-04 2022-03-17 삼성전자주식회사 발광소자 패키지
US11901397B2 (en) 2019-05-14 2024-02-13 Seoul Viosys Co., Ltd. LED chip having fan-out structure and manufacturing method of the same
JP7636347B2 (ja) * 2019-05-14 2025-02-26 ソウル バイオシス カンパニー リミテッド 発光パッケージ及び表示装置
MX2021013717A (es) 2019-05-14 2021-12-10 Seoul Viosys Co Ltd Chip led y metodo de manufactura del mismo.
US11756980B2 (en) 2019-05-14 2023-09-12 Seoul Viosys Co., Ltd. LED chip package and manufacturing method of the same
US11855121B2 (en) 2019-05-14 2023-12-26 Seoul Viosys Co., Ltd. LED chip and manufacturing method of the same

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KR100999784B1 (ko) * 2010-02-23 2010-12-08 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
JP5197654B2 (ja) * 2010-03-09 2013-05-15 株式会社東芝 半導体発光装置及びその製造方法
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KR101020963B1 (ko) * 2010-04-23 2011-03-09 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
JP5356312B2 (ja) * 2010-05-24 2013-12-04 株式会社東芝 半導体発光装置
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CN101740686A (zh) * 2008-11-14 2010-06-16 Lg伊诺特有限公司 半导体发光器件
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Also Published As

Publication number Publication date
JP2014042026A (ja) 2014-03-06
KR101886156B1 (ko) 2018-09-11
US8952416B2 (en) 2015-02-10
EP2701216B1 (en) 2018-10-03
US20140054543A1 (en) 2014-02-27
JP6239312B2 (ja) 2017-11-29
EP2701216A2 (en) 2014-02-26
EP2701216A3 (en) 2015-03-04
CN103633221A (zh) 2014-03-12
KR20140025025A (ko) 2014-03-04

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Effective date of registration: 20210817

Address after: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee after: Suzhou Leyu Semiconductor Co.,Ltd.

Address before: Seoul, South Kerean

Patentee before: LG INNOTEK Co.,Ltd.

CP03 Change of name, title or address
CP03 Change of name, title or address

Address after: 215499 No. 168, Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee after: Suzhou Liyu Semiconductor Co.,Ltd.

Country or region after: China

Address before: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee before: Suzhou Leyu Semiconductor Co.,Ltd.

Country or region before: China