JP6234957B2 - エピタキシャルウェーハの製造方法 - Google Patents

エピタキシャルウェーハの製造方法 Download PDF

Info

Publication number
JP6234957B2
JP6234957B2 JP2015085606A JP2015085606A JP6234957B2 JP 6234957 B2 JP6234957 B2 JP 6234957B2 JP 2015085606 A JP2015085606 A JP 2015085606A JP 2015085606 A JP2015085606 A JP 2015085606A JP 6234957 B2 JP6234957 B2 JP 6234957B2
Authority
JP
Japan
Prior art keywords
polishing
wafer
abrasive grains
epitaxial
double
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2015085606A
Other languages
English (en)
Japanese (ja)
Other versions
JP2016204187A (ja
JP2016204187A5 (enExample
Inventor
佑宜 田中
佑宜 田中
大地 北爪
大地 北爪
一成 須田
一成 須田
小林　修一
修一 小林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Priority to JP2015085606A priority Critical patent/JP6234957B2/ja
Priority to PCT/JP2016/001183 priority patent/WO2016170721A1/ja
Priority to TW105106854A priority patent/TW201708632A/zh
Publication of JP2016204187A publication Critical patent/JP2016204187A/ja
Publication of JP2016204187A5 publication Critical patent/JP2016204187A5/ja
Application granted granted Critical
Publication of JP6234957B2 publication Critical patent/JP6234957B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Weting (AREA)
JP2015085606A 2015-04-20 2015-04-20 エピタキシャルウェーハの製造方法 Active JP6234957B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2015085606A JP6234957B2 (ja) 2015-04-20 2015-04-20 エピタキシャルウェーハの製造方法
PCT/JP2016/001183 WO2016170721A1 (ja) 2015-04-20 2016-03-04 エピタキシャルウェーハの製造方法
TW105106854A TW201708632A (zh) 2015-04-20 2016-03-07 磊晶晶圓的製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015085606A JP6234957B2 (ja) 2015-04-20 2015-04-20 エピタキシャルウェーハの製造方法

Publications (3)

Publication Number Publication Date
JP2016204187A JP2016204187A (ja) 2016-12-08
JP2016204187A5 JP2016204187A5 (enExample) 2017-03-02
JP6234957B2 true JP6234957B2 (ja) 2017-11-22

Family

ID=57143054

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015085606A Active JP6234957B2 (ja) 2015-04-20 2015-04-20 エピタキシャルウェーハの製造方法

Country Status (3)

Country Link
JP (1) JP6234957B2 (enExample)
TW (1) TW201708632A (enExample)
WO (1) WO2016170721A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6635088B2 (ja) * 2017-04-24 2020-01-22 信越半導体株式会社 シリコンウエーハの研磨方法
DE102017210423A1 (de) * 2017-06-21 2018-12-27 Siltronic Ag Verfahren, Steuerungssystem und Anlage zum Bearbeiten einer Halbleiterscheibe sowie Halbleiterscheibe
JPWO2019043890A1 (ja) * 2017-08-31 2020-08-06 株式会社Sumco 半導体ウェーハの製造方法
US11621171B2 (en) 2018-09-25 2023-04-04 Nissan Chemical Corporation Method for polishing silicon wafer with reduced wear on carrier, and polishing liquid used therein

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004195571A (ja) * 2002-12-17 2004-07-15 Noritake Co Ltd 両面研磨機用ワークキャリア及びその製造方法
JP2010021487A (ja) * 2008-07-14 2010-01-28 Sumco Corp 半導体ウェーハおよびその製造方法
JP5401683B2 (ja) * 2008-08-01 2014-01-29 株式会社Ｓｕｍｃｏ 両面鏡面半導体ウェーハおよびその製造方法
JP5644401B2 (ja) * 2010-11-15 2014-12-24 株式会社Sumco エピタキシャルウェーハの製造方法およびエピタキシャルウェーハ
JP5768554B2 (ja) * 2011-07-21 2015-08-26 旭硝子株式会社 磁気記録媒体用ガラス基板の製造方法および磁気記録媒体用ガラス基板
KR20140098761A (ko) * 2011-11-16 2014-08-08 닛산 가가쿠 고교 가부시키 가이샤 반도체 웨이퍼용 연마액 조성물

Also Published As

Publication number Publication date
WO2016170721A1 (ja) 2016-10-27
JP2016204187A (ja) 2016-12-08
TW201708632A (zh) 2017-03-01

Similar Documents

Publication Publication Date Title
JP5644401B2 (ja) エピタキシャルウェーハの製造方法およびエピタキシャルウェーハ
JP6312976B2 (ja) 半導体ウェーハの製造方法
US6861360B2 (en) Double-sided polishing process for producing a multiplicity of silicon semiconductor wafers
US20090057840A1 (en) Wafer manufacturing method, polishing apparatus, and wafer
JP5479390B2 (ja) シリコンウェーハの製造方法
TWI430352B (zh) 製造經磊晶塗覆的半導體晶圓的方法
KR101104635B1 (ko) 에피택셜 실리콘 웨이퍼의 제조 방법
JP6234957B2 (ja) エピタキシャルウェーハの製造方法
KR20070108872A (ko) 반도체 웨이퍼의 제조방법 및 반도체 웨이퍼의경면면취방법
JP6027346B2 (ja) 半導体ウェーハの製造方法
JP5375768B2 (ja) シリコンエピタキシャルウェーハの製造方法
JP2007204286A (ja) エピタキシャルウェーハの製造方法
JP5795461B2 (ja) エピタキシャルシリコンウェーハの製造方法
JP5381304B2 (ja) シリコンエピタキシャルウェーハの製造方法
JP2011143477A (ja) 両面研磨装置用キャリア及びこれを用いた両面研磨装置並びに両面研磨方法
CN114667594A (zh) 晶片的研磨方法及硅晶片
JP2006120939A (ja) シリコンエピタキシャルウェーハの製造方法
JP2009269150A (ja) 研磨布用ドレッシングプレート及び研磨布のドレッシング方法並びに半導体基板の研磨方法
TW202407175A (zh) 單晶矽晶圓的乾式蝕刻方法、單晶矽晶圓的製造方法及單晶矽晶圓
JP5287982B2 (ja) シリコンエピタキシャルウェーハの製造方法
JP2011091143A (ja) シリコンエピタキシャルウェーハの製造方法
CN110418696A (zh) 晶圆的双面研磨方法及双面研磨装置
JP2009135180A (ja) 半導体ウェーハの製造方法
Yamauchi et al. Atomically controlled surfacing of single crystalline SiC and GaN by catalyst-referred etching

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20170120

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170124

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20170124

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20170206

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20170214

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170403

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20170425

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170518

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20170529

A912 Re-examination (zenchi) completed and case transferred to appeal board

Free format text: JAPANESE INTERMEDIATE CODE: A912

Effective date: 20170616

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170822

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20171025

R150 Certificate of patent or registration of utility model

Ref document number: 6234957

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250