TW201708632A - 磊晶晶圓的製造方法 - Google Patents

磊晶晶圓的製造方法 Download PDF

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Publication number
TW201708632A
TW201708632A TW105106854A TW105106854A TW201708632A TW 201708632 A TW201708632 A TW 201708632A TW 105106854 A TW105106854 A TW 105106854A TW 105106854 A TW105106854 A TW 105106854A TW 201708632 A TW201708632 A TW 201708632A
Authority
TW
Taiwan
Prior art keywords
polishing
wafer
double
epitaxial
epitaxial wafer
Prior art date
Application number
TW105106854A
Other languages
English (en)
Chinese (zh)
Inventor
田中佑宜
北爪大地
須田一成
小林修一
Original Assignee
信越半導體股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 信越半導體股份有限公司 filed Critical 信越半導體股份有限公司
Publication of TW201708632A publication Critical patent/TW201708632A/zh

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Classifications

    • H10P90/129—
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Weting (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW105106854A 2015-04-20 2016-03-07 磊晶晶圓的製造方法 TW201708632A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015085606A JP6234957B2 (ja) 2015-04-20 2015-04-20 エピタキシャルウェーハの製造方法

Publications (1)

Publication Number Publication Date
TW201708632A true TW201708632A (zh) 2017-03-01

Family

ID=57143054

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105106854A TW201708632A (zh) 2015-04-20 2016-03-07 磊晶晶圓的製造方法

Country Status (3)

Country Link
JP (1) JP6234957B2 (enExample)
TW (1) TW201708632A (enExample)
WO (1) WO2016170721A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI695094B (zh) * 2017-06-21 2020-06-01 德商世創電子材料公司 用於加工半導體晶圓的方法、控制系統與工廠
CN111316399A (zh) * 2017-08-31 2020-06-19 胜高股份有限公司 半导体晶片的制造方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6635088B2 (ja) * 2017-04-24 2020-01-22 信越半導体株式会社 シリコンウエーハの研磨方法
CN112703581A (zh) 2018-09-25 2021-04-23 日产化学株式会社 使载体的磨损减轻的硅片的研磨方法及用于其的研磨液

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004195571A (ja) * 2002-12-17 2004-07-15 Noritake Co Ltd 両面研磨機用ワークキャリア及びその製造方法
JP2010021487A (ja) * 2008-07-14 2010-01-28 Sumco Corp 半導体ウェーハおよびその製造方法
JP5401683B2 (ja) * 2008-08-01 2014-01-29 株式会社Ｓｕｍｃｏ 両面鏡面半導体ウェーハおよびその製造方法
JP5644401B2 (ja) * 2010-11-15 2014-12-24 株式会社Sumco エピタキシャルウェーハの製造方法およびエピタキシャルウェーハ
JP5768554B2 (ja) * 2011-07-21 2015-08-26 旭硝子株式会社 磁気記録媒体用ガラス基板の製造方法および磁気記録媒体用ガラス基板
US20140319411A1 (en) * 2011-11-16 2014-10-30 Nissan Chemical Industries, Ltd. Semiconductor wafer polishing liquid composition

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI695094B (zh) * 2017-06-21 2020-06-01 德商世創電子材料公司 用於加工半導體晶圓的方法、控制系統與工廠
US11158549B2 (en) 2017-06-21 2021-10-26 Siltronic Ag Method, control system and plant for processing a semiconductor wafer, and semiconductor wafer
CN111316399A (zh) * 2017-08-31 2020-06-19 胜高股份有限公司 半导体晶片的制造方法
CN111316399B (zh) * 2017-08-31 2023-12-26 胜高股份有限公司 半导体晶片的制造方法

Also Published As

Publication number Publication date
JP2016204187A (ja) 2016-12-08
JP6234957B2 (ja) 2017-11-22
WO2016170721A1 (ja) 2016-10-27

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