JP6232986B2 - 光送信器 - Google Patents
光送信器 Download PDFInfo
- Publication number
- JP6232986B2 JP6232986B2 JP2013252237A JP2013252237A JP6232986B2 JP 6232986 B2 JP6232986 B2 JP 6232986B2 JP 2013252237 A JP2013252237 A JP 2013252237A JP 2013252237 A JP2013252237 A JP 2013252237A JP 6232986 B2 JP6232986 B2 JP 6232986B2
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- circuit
- tec
- optical
- internal temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/40—Transceivers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/04—Arrangements for thermal management
- H01S3/0405—Conductive cooling, e.g. by heat sinks or thermo-electric elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/067—Fibre lasers
- H01S3/06704—Housings; Packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/02345—Wire-bonding
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/50—Transmitters
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/50—Transmitters
- H04B10/501—Structural aspects
- H04B10/503—Laser transmitters
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/50—Transmitters
- H04B10/501—Structural aspects
- H04B10/506—Multiwavelength transmitters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48111—Disposition the wire connector extending above another semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0617—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium using memorised or pre-programmed laser characteristics
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Lasers (AREA)
Description
最初に本願発明の実施形態の内容を列記して説明する。
を満たす構成であってもよい。上記式(1)を満たすことにより、光送信器の内部温度の温度変化が温度検出器により検出された温度の温度変化よりも緩やかとなり、光送信モジュールの内部に設けられた温度検出器により検出された温度から、光送信モジュールの外部における光送信器の内部温度を高精度に推定できる。
本発明の実施形態にかかる光送信器の具体例を、以下に図面を参照しつつ説明する。なお、本発明はこれらの例示に限定されるものではなく、特許請求の範囲によって示され、特許請求の範囲と均等の意味及び範囲内での全ての変更が含まれることが意図される。
すなわち、RTOSAおよびCTOSAは次のように表すことができる。
が満たされることが好ましい。例えば、被温調素子がキャリア等に実装された上で、そのキャリア等がTEC54の上面に実装されるような構造を取る場合、キャリアの熱伝導度が小さいとRLが大きくなるためにキャリアの材料は熱伝導度が高く、キャリアの厚さは薄いことが好ましい。仮にRTOSAがRLよりも小さいと、パッケージ56外部との熱の出入りによってTEC54上面の温度が変動するため、TEC54による温度調節(制御)の効率が悪化する。
を満たすことが必要となる。
が満たされることで、光送信部10の内部温度の温度変化が温度検出器55により検出された温度の温度変化よりも緩やかとなり、パッケージ56の内部に設けられた温度検出器55により検出された温度から、パッケージ56の外部における光送信部10の内部温度を高精度に推定できる。
以下、実施例に基づいて、本発明の一形態に係る光送信部による内部温度の推定について具体的に説明する。なお、光送信部の構成は下記の実施例に限定されるものではない。
Claims (4)
- 外部装置に内部温度情報を回答する機能を有する光送信器であって、
通電によって発熱する少なくとも1つの被温調素子と、前記被温調素子の加熱又は冷却を行う熱電素子と、前記被温調素子の温度を検出する温度検出器と、前記被温調素子、前記温度検出器、及び前記熱電素子を収容するパッケージと、を有する光送信モジュールと、
前記パッケージの外部の温度を検出する温度検出回路と、
前記被温調素子及び前記温度検出回路の通電を制御する演算処理回路と、
前記演算処理回路から情報の読み書きが可能な記憶装置と、を備え、
前記被温調素子は、前記パッケージの複数の端子との複数の電気的配線を介して前記パッケージの外部と熱的に結合しており、
前記演算処理回路は、前記被温調素子及び前記温度検出回路に通電しているときは前記温度検出回路により検出された温度を前記内部温度情報として前記記憶装置に書き込み、前記被温調素子及び前記温度検出回路に通電していないときは前記温度検出器により検出された温度と前記記憶装置に格納された前記内部温度情報とに基づいて前記内部温度を算出し、前記内部温度情報として前記記憶装置に書き込む、光送信器。 - 前記光送信モジュールは、前記被温調素子として、少なくとも2つの発光素子及び前記発光素子を駆動する少なくとも1つの駆動回路を有し、
前記発光素子及び前記駆動回路は、各々が前記パッケージの複数の端子との複数の電気的配線を介して前記パッケージの外部と熱的に結合している、
請求項1又は2に記載の光送信器。 - 前記温度検出器は、前記演算処理回路と電気的に接続されており、
前記演算処理回路は、前記被温調素子に通電していないときに前記温度検出器により検出された温度に基づいて前記内部温度を算出するとき、前記被温調素子の通電を停止する直前に前記被温調素子に通電しているときに前記温度検出回路により検出された温度の情報を利用する、請求項1〜3のいずれか一項に記載の光送信器。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013252237A JP6232986B2 (ja) | 2013-12-05 | 2013-12-05 | 光送信器 |
US14/562,047 US9577757B2 (en) | 2013-12-05 | 2014-12-05 | Optical transmitter |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013252237A JP6232986B2 (ja) | 2013-12-05 | 2013-12-05 | 光送信器 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015109382A JP2015109382A (ja) | 2015-06-11 |
JP6232986B2 true JP6232986B2 (ja) | 2017-11-22 |
Family
ID=53272238
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013252237A Active JP6232986B2 (ja) | 2013-12-05 | 2013-12-05 | 光送信器 |
Country Status (2)
Country | Link |
---|---|
US (1) | US9577757B2 (ja) |
JP (1) | JP6232986B2 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101681099B1 (ko) * | 2015-07-08 | 2016-12-01 | (주) 빛과 전자 | 파장 가변형 광 송신장치 |
CN106656347B (zh) * | 2016-12-26 | 2019-03-19 | 武汉光迅科技股份有限公司 | 一种用于控制光发射组件波长的方法及装置 |
WO2018168702A1 (ja) * | 2017-03-15 | 2018-09-20 | 日本電気株式会社 | コヒーレント光送受信装置およびコヒーレント光送受信システム |
US10313024B1 (en) * | 2018-04-26 | 2019-06-04 | Applied Optoelectronics, Inc. | Transmitter optical subassembly with trace routing to provide electrical isolation between power and RF traces |
US10989870B2 (en) | 2018-08-29 | 2021-04-27 | Applied Optoelectronics, Inc. | Transmitter optical subassembly with hermetically-sealed light engine and external arrayed waveguide grating |
CN115085817B (zh) * | 2021-03-10 | 2024-04-05 | 青岛海信宽带多媒体技术有限公司 | 一种光模块和光模块tec断电保护方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002171023A (ja) * | 2000-11-30 | 2002-06-14 | Hitachi Ltd | 集積化光素子及び半導体レーザモジュール並びに光送信機 |
US6912361B2 (en) * | 2002-10-08 | 2005-06-28 | Finisar Corporation | Optical transceiver module with multipurpose internal serial bus |
JP2003098395A (ja) * | 2001-09-20 | 2003-04-03 | Hitachi Cable Ltd | 光通信デバイス |
US7236507B2 (en) * | 2002-11-08 | 2007-06-26 | Finisar Corporation | Time-based adjustment of temperature control of laser to stabilize wavelengths |
JP2008016511A (ja) * | 2006-07-03 | 2008-01-24 | Sumitomo Electric Ind Ltd | 光通信モジュールの製造方法 |
JP2008113207A (ja) * | 2006-10-30 | 2008-05-15 | Sumitomo Electric Ind Ltd | 光データリンク |
JP4983424B2 (ja) * | 2007-06-15 | 2012-07-25 | 住友電気工業株式会社 | 光トランシーバ |
JP2009105489A (ja) * | 2007-10-19 | 2009-05-14 | Sumitomo Electric Ind Ltd | 光トランシーバ及び光トランシーバの制御方法 |
JP2009122444A (ja) * | 2007-11-15 | 2009-06-04 | Canon Inc | 画像形成装置 |
JP5228879B2 (ja) * | 2008-12-17 | 2013-07-03 | 三菱電機株式会社 | 光送信装置 |
US8036534B2 (en) * | 2009-01-22 | 2011-10-11 | Sumitomo Electric Industries, Ltd. | Optical transmitter outputting a plurality of signal light with a preset wavelength span |
JP5420442B2 (ja) * | 2010-02-04 | 2014-02-19 | 日本オクラロ株式会社 | 光モジュール、筐体温度推定方法、筐体温度推定装置及び筐体温度推定プログラム |
JP2012168410A (ja) * | 2011-02-15 | 2012-09-06 | Nec Corp | 光送信装置、光送受信装置、制御方法および制御プログラム |
KR20130085498A (ko) * | 2011-12-12 | 2013-07-30 | 한국전자통신연구원 | 다채널 송신용 광 모듈 |
-
2013
- 2013-12-05 JP JP2013252237A patent/JP6232986B2/ja active Active
-
2014
- 2014-12-05 US US14/562,047 patent/US9577757B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US9577757B2 (en) | 2017-02-21 |
US20150162989A1 (en) | 2015-06-11 |
JP2015109382A (ja) | 2015-06-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6232986B2 (ja) | 光送信器 | |
CN106233549B (zh) | 光发送器及半导体激光器温度控制方法 | |
JP5009104B2 (ja) | 光送受信モジュール、その制御方法およびプログラム | |
JP2007523493A (ja) | 熱電冷却素子を使用して行なう光電変換デバイス動作の電力最適化 | |
US20080273561A1 (en) | Method for Forming Anti-Reflective Coating | |
US9787056B2 (en) | Method, apparatus, optical component and optical network system for controlling operating temperature of optical component | |
JPH1065269A (ja) | レーザ送信機 | |
JP2012168410A (ja) | 光送信装置、光送受信装置、制御方法および制御プログラム | |
WO2016029812A1 (zh) | 光纤光栅解调仪及其温度控制方法 | |
JP2012084824A (ja) | 電子部品の温度制御 | |
US20060239314A1 (en) | Electro-optic transducer die mounted directly upon a temperature sensing device | |
US20160269117A1 (en) | Optical communication device | |
JP4983424B2 (ja) | 光トランシーバ | |
JP5420442B2 (ja) | 光モジュール、筐体温度推定方法、筐体温度推定装置及び筐体温度推定プログラム | |
JP6180213B2 (ja) | 光モジュール及び光モジュールの制御方法 | |
US7706421B2 (en) | Temperature sensing device patterned on an electro-optic transducer die | |
JP2010251646A (ja) | 光送信器、光送受信器、駆動電流制御方法、及び温度測定方法 | |
JP6244768B2 (ja) | 光送信器及び光送信器の起動方法 | |
JP2009289842A (ja) | 光デバイス | |
JP2010212477A (ja) | 半導体素子モジュール | |
KR20140141753A (ko) | 저밀도 파장분할다중 시스템용 전력효율 극대화를 위한 파장제어 방법 | |
JP2007258491A (ja) | 発光素子の温度測定方法、送信方法、発光装置及び送信装置 | |
KR101753246B1 (ko) | 광 모듈 및 광 모듈의 동작온도 제어방법 | |
KR101984243B1 (ko) | 외기 온도 적응형 광 송수신기 | |
JP2005109357A (ja) | 光送信器および発光素子の劣化判定方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20161117 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170718 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20170719 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170912 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20170926 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20171009 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6232986 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |