JP6231735B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6231735B2
JP6231735B2 JP2012120782A JP2012120782A JP6231735B2 JP 6231735 B2 JP6231735 B2 JP 6231735B2 JP 2012120782 A JP2012120782 A JP 2012120782A JP 2012120782 A JP2012120782 A JP 2012120782A JP 6231735 B2 JP6231735 B2 JP 6231735B2
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Prior art keywords
conductive layer
layer
transistor
semiconductor
electrically connected
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JP2012120782A
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Japanese (ja)
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JP2013012730A5 (enExample
JP2013012730A (ja
Inventor
英樹 松倉
英樹 松倉
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2012120782A priority Critical patent/JP6231735B2/ja
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Publication of JP2013012730A5 publication Critical patent/JP2013012730A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors

Landscapes

  • Thin Film Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electroluminescent Light Sources (AREA)
  • Dram (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2012120782A 2011-06-01 2012-05-28 半導体装置 Active JP6231735B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012120782A JP6231735B2 (ja) 2011-06-01 2012-05-28 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011123521 2011-06-01
JP2011123521 2011-06-01
JP2012120782A JP6231735B2 (ja) 2011-06-01 2012-05-28 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2017037915A Division JP6302110B2 (ja) 2011-06-01 2017-03-01 半導体装置

Publications (3)

Publication Number Publication Date
JP2013012730A JP2013012730A (ja) 2013-01-17
JP2013012730A5 JP2013012730A5 (enExample) 2015-06-11
JP6231735B2 true JP6231735B2 (ja) 2017-11-15

Family

ID=47261020

Family Applications (2)

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JP2012120782A Active JP6231735B2 (ja) 2011-06-01 2012-05-28 半導体装置
JP2017037915A Active JP6302110B2 (ja) 2011-06-01 2017-03-01 半導体装置

Family Applications After (1)

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JP2017037915A Active JP6302110B2 (ja) 2011-06-01 2017-03-01 半導体装置

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US (1) US10504920B2 (enExample)
JP (2) JP6231735B2 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014188982A1 (en) 2013-05-20 2014-11-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6345544B2 (ja) * 2013-09-05 2018-06-20 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR102529174B1 (ko) * 2013-12-27 2023-05-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9653611B2 (en) * 2014-03-07 2017-05-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI755773B (zh) * 2014-06-30 2022-02-21 日商半導體能源研究所股份有限公司 發光裝置，模組，及電子裝置
US10204898B2 (en) 2014-08-08 2019-02-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US10056497B2 (en) * 2015-04-15 2018-08-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9905579B2 (en) * 2016-03-18 2018-02-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the semiconductor device
JP6832656B2 (ja) * 2016-09-14 2021-02-24 株式会社ジャパンディスプレイ 半導体装置の製造方法
TW201836020A (zh) 2017-02-17 2018-10-01 日商半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
US20210242207A1 (en) * 2018-05-18 2021-08-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
KR20210027367A (ko) 2018-06-29 2021-03-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
JP7202118B2 (ja) * 2018-09-26 2023-01-11 株式会社ジャパンディスプレイ 表示装置及びアレイ基板
JP7569536B2 (ja) * 2020-10-12 2024-10-18 株式会社村田製作所 可変電子素子、および回路装置

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62274773A (ja) * 1986-05-23 1987-11-28 Hitachi Ltd 半導体記憶装置
JPH05282862A (ja) * 1992-03-30 1993-10-29 Mitsubishi Electric Corp 半導体記憶装置
JPH06305713A (ja) * 1993-04-16 1994-11-01 Texas Instr Japan Ltd ゾルーゲル法による強誘電体膜の形成方法及びキャパシタの製造方法、及びその原料溶液
JP3369296B2 (ja) 1994-03-25 2003-01-20 三菱電機株式会社 Ｍｏｓ型コンデンサ
KR100219519B1 (ko) 1997-01-10 1999-09-01 윤종용 페로일렉트릭 플로팅 게이트 램을 구비하는 반도체 메모리 디바이스 및 그 제조방법
JPH11233789A (ja) * 1998-02-12 1999-08-27 Semiconductor Energy Lab Co Ltd 半導体装置
JP3407020B2 (ja) 1998-05-25 2003-05-19 Ｎｅｃエレクトロニクス株式会社 半導体装置
JP2001053164A (ja) * 1999-08-04 2001-02-23 Sony Corp 半導体記憶装置
JP2001318627A (ja) 2000-02-29 2001-11-16 Semiconductor Energy Lab Co Ltd 発光装置
JP4306142B2 (ja) * 2001-04-24 2009-07-29 株式会社日立製作所 画像表示装置及びその製造方法
JP2003100887A (ja) 2001-09-26 2003-04-04 Nec Corp 半導体装置
JP3995619B2 (ja) * 2003-03-12 2007-10-24 富士通株式会社 薄膜キャパシタ素子、その製造方法及び電子装置
TWI300212B (en) * 2004-09-06 2008-08-21 Himax Tech Inc Liquid crystal display of improving display color contrast effect and related method
WO2007058329A1 (en) * 2005-11-15 2007-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2008022610A (ja) 2006-07-11 2008-01-31 Seiko Epson Corp 昇圧回路及び不揮発性メモリ装置
JP4748456B2 (ja) * 2006-09-26 2011-08-17 カシオ計算機株式会社 画素駆動回路及び画像表示装置
TWI354510B (en) * 2007-05-03 2011-12-11 Chimei Innolux Corp System for displaying image
US8232598B2 (en) * 2007-09-20 2012-07-31 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
JP5629999B2 (ja) * 2009-09-29 2014-11-26 大日本印刷株式会社 Ｉｃタグ及びその製造方法
KR20220153647A (ko) 2009-10-29 2022-11-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011052437A1 (en) * 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Non-linear element, display device including non-linear element, and electronic device including display device
KR101788521B1 (ko) * 2009-10-30 2017-10-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101810254B1 (ko) * 2009-11-06 2017-12-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 동작 방법
KR101813460B1 (ko) 2009-12-18 2017-12-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
TW201324760A (zh) * 2011-12-07 2013-06-16 Chunghwa Picture Tubes Ltd 畫素結構及其製造方法

Also Published As

Publication number Publication date
US20120305996A1 (en) 2012-12-06
JP6302110B2 (ja) 2018-03-28
JP2017108168A (ja) 2017-06-15
US10504920B2 (en) 2019-12-10
JP2013012730A (ja) 2013-01-17

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