JP6222365B2 - Esd保護機能付複合電子部品 - Google Patents
Esd保護機能付複合電子部品 Download PDFInfo
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- JP6222365B2 JP6222365B2 JP2016535941A JP2016535941A JP6222365B2 JP 6222365 B2 JP6222365 B2 JP 6222365B2 JP 2016535941 A JP2016535941 A JP 2016535941A JP 2016535941 A JP2016535941 A JP 2016535941A JP 6222365 B2 JP6222365 B2 JP 6222365B2
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- 239000002131 composite material Substances 0.000 title claims description 74
- 239000010409 thin film Substances 0.000 claims description 190
- 239000004065 semiconductor Substances 0.000 claims description 153
- 239000003990 capacitor Substances 0.000 claims description 103
- 239000000758 substrate Substances 0.000 claims description 54
- 239000010410 layer Substances 0.000 description 215
- 230000006870 function Effects 0.000 description 70
- 239000010408 film Substances 0.000 description 42
- 230000002457 bidirectional effect Effects 0.000 description 21
- 238000000034 method Methods 0.000 description 20
- 238000000605 extraction Methods 0.000 description 19
- 238000004519 manufacturing process Methods 0.000 description 17
- 239000011241 protective layer Substances 0.000 description 14
- 238000000206 photolithography Methods 0.000 description 12
- 238000004544 sputter deposition Methods 0.000 description 11
- 229910004298 SiO 2 Inorganic materials 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 238000000059 patterning Methods 0.000 description 8
- 238000001312 dry etching Methods 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229920001721 polyimide Polymers 0.000 description 5
- 239000009719 polyimide resin Substances 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 230000009993 protective function Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/01—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate comprising only passive thin-film or thick-film elements formed on a common insulating substrate
- H01L27/016—Thin-film circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/13—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body combined with thin-film or thick-film passive components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/866—Zener diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/10—Inductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1604—Amorphous materials
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Description
本発明の一実施形態について図1〜図4を参照して説明する。図1は本発明の一実施形態にかかるESD保護機能付複合電子部品を示す図であって、(a)は平面図、(b)は(a)のA−A線矢視断面図、(c)は(a)のB−B線矢視断面図、図2は図1のESD保護機能付複合電子部品の等価回路を示す図である。
ESD保護機能付複合電子部品100の概略構成について説明する。
ESD保護機能付複合電子部品100の製造方法の一例について説明する。
本発明の他の実施形態について図5〜図11を参照して説明する。図5は本発明の他の実施形態にかかるESD保護機能付複合電子部品を示す平面図、図6は図5に示すESD保護機能付複合電子部品を示す図であって、(a)は図5のC−C線矢視断面図、(b)は図5のD−D線矢視断面図、(c)は図5のE−E線矢視断面図、図7は図5のESD保護機能付複合電子部品の等価回路を示す図である。
ESD保護機能付複合電子部品100aの概略構成について説明する。
ESD保護機能付複合電子部品100aの製造方法の一例について説明する。
6,42 第1の半導体層
7 共用半導体層(第2の半導体層)
12〜14,51〜54 外部電極
21 Si基板(共用半導体層、第2の半導体層)
100,100a ESD保護機能付複合電子部品
C,C1〜C4 薄膜キャパシタ(薄膜回路素子)
D1〜D3,D11〜D14 ツェナーダイオード
L 薄膜インダクタ(薄膜回路素子)
R1〜R5 薄膜抵抗(薄膜回路素子)
Claims (7)
- 複数の外部電極と、
基板と、
前記複数の外部電極それぞれに対応して設けられ、p型およびn型のいずれか一方の導電型の第1の半導体層と他方の導電型の第2の半導体層とを有するpn接合型の複数のツェナーダイオードと、
前記複数の外部電極のうち、任意の2つの外部電極間に直列接続される少なくとも1つの薄膜回路素子とを備え、
前記第1の半導体層および第2の半導体層は、前記基板の主面上に成膜された半導体層であり、
前記複数のツェナーダイオードそれぞれは、対応する前記外部電極に前記第1の半導体層側が接続され、
前記複数のツェナーダイオードそれぞれの前記第2の半導体層は同一平面内に配置されて電気的に接続されている
ことを特徴とするESD保護機能付複合電子部品。 - 前記複数のツェナーダイオードそれぞれの前記第2の半導体層として共用される前記他方の導電型の共用半導体層と、
前記複数のツェナーダイオードそれぞれの前記第1の半導体層を成すように前記共用半導体層上に島状に形成され、前記共用半導体層にpn接合された複数の第1の半導体薄膜と
を備えることを特徴とする請求項1に記載のESD保護機能付複合電子部品。 - 前記基板は絶縁基板であり、
前記共用半導体層は、前記絶縁基板上に形成された第2の半導体薄膜により形成され、
前記絶縁基板上の前記第2の半導体薄膜が形成された領域と異なる領域に前記薄膜回路素子が配置されている
ことを特徴とする請求項2に記載のESD保護機能付複合電子部品。 - 前記絶縁基板はSi基板であり、
前記Si基板上に前記薄膜回路素子が配置されている
ことを特徴とする請求項3に記載のESD保護機能付複合電子部品。 - 前記薄膜回路素子は、薄膜キャパシタ、薄膜インダクタ、薄膜抵抗または薄膜サーミスタ並びにこれらの組み合わせであることを特徴とする請求項1ないし4のいずれかに記載のESD保護機能付複合電子部品。
- 前記外部電極が第1〜第3外部電極であり、
前記第1、第2外部電極間に直列接続された前記薄膜キャパシタと、
前記第2、第3外部電極間に直列接続された前記薄膜インダクタと
を備えることを特徴とする請求項5に記載のESD保護機能付複合電子部品。 - 前記外部電極が第1〜第4外部電極であり、
前記第1、第2外部電極間に直列接続された可変容量型の前記薄膜キャパシタと、
一端が前記第3外部電極に接続された第1の前記薄膜抵抗と、
一端が前記第4外部電極に接続された第2の前記薄膜抵抗とを備え、
前記第1、第2の薄膜抵抗の他端間に前記薄膜キャパシタが挿入されるように、前記第1、第2の薄膜抵抗それぞれの他端が前記薄膜キャパシタ両端のそれぞれに接続されていることを特徴とする請求項5に記載のESD保護機能付複合電子部品。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014149598 | 2014-07-23 | ||
JP2014149598 | 2014-07-23 | ||
PCT/JP2015/070757 WO2016013555A1 (ja) | 2014-07-23 | 2015-07-22 | Esd保護機能付複合電子部品 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2016013555A1 JPWO2016013555A1 (ja) | 2017-04-27 |
JP6222365B2 true JP6222365B2 (ja) | 2017-11-01 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2016535941A Expired - Fee Related JP6222365B2 (ja) | 2014-07-23 | 2015-07-22 | Esd保護機能付複合電子部品 |
Country Status (3)
Country | Link |
---|---|
US (1) | US10153267B2 (ja) |
JP (1) | JP6222365B2 (ja) |
WO (1) | WO2016013555A1 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN205959773U (zh) * | 2014-08-06 | 2017-02-15 | 株式会社村田制作所 | 复合电子部件 |
US10033347B2 (en) * | 2015-05-21 | 2018-07-24 | Steven E. Summer | DC/DC electrical configuration for operating over a large span of input voltages |
EP3327806B1 (en) * | 2016-11-24 | 2021-07-21 | Murata Integrated Passive Solutions | Integrated electronic component suitable for broadband biasing |
JP6866807B2 (ja) * | 2016-12-07 | 2021-04-28 | 株式会社村田製作所 | Esd保護デバイス |
CN209104139U (zh) * | 2017-03-17 | 2019-07-12 | 株式会社村田制作所 | 薄膜esd保护器件 |
TWI743384B (zh) * | 2018-07-31 | 2021-10-21 | 立積電子股份有限公司 | 反並聯二極體裝置 |
US11133256B2 (en) * | 2019-06-20 | 2021-09-28 | Intel Corporation | Embedded bridge substrate having an integral device |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61206269A (ja) | 1985-03-11 | 1986-09-12 | Nec Corp | 半導体装置 |
US6304126B1 (en) | 1997-09-29 | 2001-10-16 | Stmicroelectronics S.A. | Protection circuit that can be associated with a filter |
FR2769142B1 (fr) * | 1997-09-29 | 1999-12-17 | Sgs Thomson Microelectronics | Circuit de protection associable a un filtre |
GB9907910D0 (en) | 1999-04-07 | 1999-06-02 | Koninkl Philips Electronics Nv | Thin film capacitor element |
JP2003060046A (ja) | 2001-08-09 | 2003-02-28 | Murata Mfg Co Ltd | 半導体集積回路およびそれを用いた電子装置 |
US7808752B2 (en) | 2004-08-17 | 2010-10-05 | Semiconductor Components Industries, Llc | Integrated passive filter incorporating inductors and ESD protectors |
JP2007005616A (ja) * | 2005-06-24 | 2007-01-11 | Sony Corp | 半導体装置及びその製造方法 |
JP2007005615A (ja) | 2005-06-24 | 2007-01-11 | Olympus Corp | 光源装置及び投影型表示装置 |
JP2009124410A (ja) | 2007-11-14 | 2009-06-04 | Toshiba Corp | Emiフィルタおよび電子機器 |
US7955941B2 (en) * | 2008-09-11 | 2011-06-07 | Semiconductor Components Industries, Llc | Method of forming an integrated semiconductor device and structure therefor |
JP2013065771A (ja) * | 2011-09-20 | 2013-04-11 | Toshiba Corp | Emiフィルタ |
JP2013191824A (ja) * | 2012-02-15 | 2013-09-26 | Sharp Corp | 酸化物半導体及びこれを含む半導体接合素子 |
JP2014067986A (ja) | 2012-09-10 | 2014-04-17 | Toshiba Corp | 半導体装置 |
-
2015
- 2015-07-22 WO PCT/JP2015/070757 patent/WO2016013555A1/ja active Application Filing
- 2015-07-22 JP JP2016535941A patent/JP6222365B2/ja not_active Expired - Fee Related
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2017
- 2017-01-11 US US15/403,356 patent/US10153267B2/en active Active
Also Published As
Publication number | Publication date |
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JPWO2016013555A1 (ja) | 2017-04-27 |
US20170125398A1 (en) | 2017-05-04 |
US10153267B2 (en) | 2018-12-11 |
WO2016013555A1 (ja) | 2016-01-28 |
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