JP6214080B2 - 空隙を有する半導体パッケージ構造体および形成方法 - Google Patents

空隙を有する半導体パッケージ構造体および形成方法 Download PDF

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JP6214080B2
JP6214080B2 JP2013128001A JP2013128001A JP6214080B2 JP 6214080 B2 JP6214080 B2 JP 6214080B2 JP 2013128001 A JP2013128001 A JP 2013128001A JP 2013128001 A JP2013128001 A JP 2013128001A JP 6214080 B2 JP6214080 B2 JP 6214080B2
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package substrate
semiconductor die
top surface
package
package structure
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JP2014011456A5 (enExample
JP2014011456A (ja
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エス.ユーリン トレント
エス.ユーリン トレント
ジェイ.カーペンター バートン
ジェイ.カーペンター バートン
ピー.ウィルカーソン ブレット
ピー.ウィルカーソン ブレット
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NXP USA Inc
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NXP USA Inc
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H01L23/3128Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
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    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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    • H01L2224/4805Shape
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    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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    • H01L2224/48228Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item the bond pad being disposed in a recess of the surface of the item
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    • H01L2224/732Location after the connecting process
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    • H01L2224/83001Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving a temporary auxiliary member not forming part of the bonding apparatus
    • H01L2224/83002Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving a temporary auxiliary member not forming part of the bonding apparatus being a removable or sacrificial coating
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    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85001Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector involving a temporary auxiliary member not forming part of the bonding apparatus, e.g. removable or sacrificial coating, film or substrate
    • H01L2224/85002Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector involving a temporary auxiliary member not forming part of the bonding apparatus, e.g. removable or sacrificial coating, film or substrate being a removable or sacrificial coating
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    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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    • H01L2924/1815Shape
    • H01L2924/1816Exposing the passive side of the semiconductor or solid-state body
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    • H01L2924/181Encapsulation
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
JP2013128001A 2012-06-29 2013-06-18 空隙を有する半導体パッケージ構造体および形成方法 Active JP6214080B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/537,388 US8704370B2 (en) 2012-06-29 2012-06-29 Semiconductor package structure having an air gap and method for forming
US13/537,388 2012-06-29

Publications (3)

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JP2014011456A JP2014011456A (ja) 2014-01-20
JP2014011456A5 JP2014011456A5 (enExample) 2016-08-04
JP6214080B2 true JP6214080B2 (ja) 2017-10-18

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US (1) US8704370B2 (enExample)
JP (1) JP6214080B2 (enExample)
CN (1) CN103531548B (enExample)

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US10068817B2 (en) * 2016-03-18 2018-09-04 Macom Technology Solutions Holdings, Inc. Semiconductor package
US11211305B2 (en) 2016-04-01 2021-12-28 Texas Instruments Incorporated Apparatus and method to support thermal management of semiconductor-based components
US10861796B2 (en) 2016-05-10 2020-12-08 Texas Instruments Incorporated Floating die package
US10179730B2 (en) 2016-12-08 2019-01-15 Texas Instruments Incorporated Electronic sensors with sensor die in package structure cavity
US9761543B1 (en) 2016-12-20 2017-09-12 Texas Instruments Incorporated Integrated circuits with thermal isolation and temperature regulation
US9865537B1 (en) * 2016-12-30 2018-01-09 Texas Instruments Incorporated Methods and apparatus for integrated circuit failsafe fuse package with arc arrest
US10411150B2 (en) 2016-12-30 2019-09-10 Texas Instruments Incorporated Optical isolation systems and circuits and photon detectors with extended lateral P-N junctions
US9929110B1 (en) 2016-12-30 2018-03-27 Texas Instruments Incorporated Integrated circuit wave device and method
US10074639B2 (en) 2016-12-30 2018-09-11 Texas Instruments Incorporated Isolator integrated circuits with package structure cavity and fabrication methods
US10121847B2 (en) 2017-03-17 2018-11-06 Texas Instruments Incorporated Galvanic isolation device

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US5474958A (en) 1993-05-04 1995-12-12 Motorola, Inc. Method for making semiconductor device having no die supporting surface
JP3918303B2 (ja) * 1998-05-29 2007-05-23 ソニー株式会社 半導体パッケージ
JP3654116B2 (ja) * 2000-03-10 2005-06-02 セイコーエプソン株式会社 半導体装置及びその製造方法、回路基板並びに電子機器
TWI256092B (en) * 2004-12-02 2006-06-01 Siliconware Precision Industries Co Ltd Semiconductor package and fabrication method thereof
JP4667076B2 (ja) * 2005-03-04 2011-04-06 ソニーケミカル&インフォメーションデバイス株式会社 機能素子実装モジュールの実装方法
KR100753528B1 (ko) * 2006-01-04 2007-08-30 삼성전자주식회사 웨이퍼 레벨 패키지 및 이의 제조 방법
US7651891B1 (en) 2007-08-09 2010-01-26 National Semiconductor Corporation Integrated circuit package with stress reduction
JP5067107B2 (ja) * 2007-10-12 2012-11-07 富士通株式会社 回路基板および半導体装置
JP2010040890A (ja) * 2008-08-07 2010-02-18 Yokogawa Electric Corp フリップチップbga基板
JP5590814B2 (ja) * 2009-03-30 2014-09-17 ピーエスフォー ルクスコ エスエイアールエル 半導体装置及びその製造方法
JP2010245337A (ja) * 2009-04-07 2010-10-28 Elpida Memory Inc 半導体装置及びその製造方法
JP2011014615A (ja) * 2009-06-30 2011-01-20 Denso Corp センサ装置およびその製造方法
DE102010001711A1 (de) * 2010-02-09 2011-08-11 Robert Bosch GmbH, 70469 Halbleiter-Bauelement und entsprechendes Herstellungsverfahren

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US8704370B2 (en) 2014-04-22
JP2014011456A (ja) 2014-01-20
CN103531548A (zh) 2014-01-22
CN103531548B (zh) 2019-03-29
US20140001632A1 (en) 2014-01-02

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