JP6196774B2 - 放射線検出器用低干渉センサヘッド及び低干渉センサヘッドを有する放射線検出器 - Google Patents
放射線検出器用低干渉センサヘッド及び低干渉センサヘッドを有する放射線検出器 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
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- H01J37/244—Detectors; Associated components or circuits therefor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
- G01T1/244—Auxiliary details, e.g. casings, cooling, damping or insulation against damage by, e.g. heat, pressure or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/252—Tubes for spot-analysing by electron or ion beams; Microanalysers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
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- G01T1/24—Measuring radiation intensity with semiconductor detectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/2441—Semiconductor detectors, e.g. diodes
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Description
12 前面
16 ボンディングアイランド
30 センサヘッド
32 センサチップ
34 熱電冷却素子
36 冷却及び/又は熱除去手段
38 検出器軸線
42 コンタクトピン
44 ガラス本体
46 ボンドワイヤ
48 ハンダ
50 ベースプレート
52 ベース
54 ボアホール
56 ハウジング
58 入力窓
60 SEM
62 磁極片
64 電子ビーム
66 試料
68 試料ホルダ
70 試料ベンチ
72 放射線(X線)
74 放射線(X線)検出器
80 TEM
82a 上側磁極片部分
82b 下側磁極片部分
Claims (15)
- EDXのための放射線検出器(74)用の低干渉センサヘッド(30)であって、コンポーネントとして、少なくとも、
‐前面(12)を有するプリント回路基板(10)と、
‐前記プリント回路基板(10)の前記前面(12)上に配置され、放射線(72)に感応するセンサチップ(32)と、
‐コンタクトピン(42)を有する、前記センサチップ(32)を動作させるための複数の信号及び制御接続部と、を含み、前記コンタクトピン(42)は、ボンディングワイヤ(46)を介して前記プリント回路基板(10)に接続され、
‐前記コンタクトピン(42)を保持するベースプレート(50)と、
‐前記前面(12)から遠ざかる方向に向いた前記プリント回路基板(10)の面に配置された冷却及び/又は熱除去手段(36)と、を更に含み、
前記ベースプレート(50)、及び前記コンタクトピン(42)の少なくとも1つは、少なくとも1種類の材料から成り、該材料の比透磁率(μr)は、1.5未満であり、1.5未満の比透磁率を有する材料は、材料番号が1.4429,1.4406,1.4404,1.4301,1.3964,1.3960又は1.3952の焼きなましオーステナイト系ステンレス鋼から成る、低干渉センサヘッド(30)。 - 前記低干渉センサヘッド(30)は、ハウジング(56)によって包囲され、前記ハウジング(56)は、前記センサチップ(32)の領域に入力窓(58)を有し、前記ハウジング(56)は、1種類の材料又は数種類の材料から成り、該材料の比透磁率(μr)は、1.5未満である、請求項1記載の低干渉センサヘッド(30)。
- 前記低干渉センサヘッド(30)は、側部領域がハウジング(56)によって包囲され、前記ハウジング(56)は、前記センサチップ(32)と面一をなして終端し、前記ハウジング(56)は、少なくとも1種類の材料から成り、該材料の比透磁率(μr)は、1.5未満である、請求項1又は2記載の低干渉センサヘッド(30)。
- 前記コンポーネント相互間の接着剤層及び/又バリヤ層は、薄さが3μm未満であると共に/或いは少なくとも1種類の材料から成り、該材料の比透磁率(μr)は、1.5未満である、請求項1〜3の何れか一項に記載の低干渉センサヘッド(30)。
- 前記少なくとも1種類の材料の比透磁率(μr)は、1.35未満である、請求項1〜4の何れか一項に記載の低干渉センサヘッド(30)。
- 前記ハウジング(56)は、オーステナイト系ステンレス鋼、焼なましニッケル合金、タンタル、ジルコニウム、タングステン、白金、パラジウム、チタン又はこれらの混合物から成る群から選択された材料から成る、請求項2又は3記載の低干渉センサヘッド(30)。
- 前記コンポーネント相互間の接続部は、ハンダ不要のものであり或いはハンダから成り、ハンダの比透磁率(μr)は、1.5未満である、請求項1〜6の何れか一項に記載の低干渉センサヘッド(30)。
- 前記ハンダは、50%未満のニッケルを含む、請求項7記載の低干渉センサヘッド(30)。
- 前記ハンダは、銀、金、銅、パラジウム又はこれらの混合物を含む、請求項7又は8記載の低干渉センサヘッド(30)。
- 前記冷却及び/又は熱除去手段(36)は、熱電冷却素子(34)と、ベース(52)とを含む、請求項1〜9の何れか一項に記載の低干渉センサヘッド(30)。
- 前記ベース(52)は、銅、銀、金又はこれらの混合物から成る、請求項10記載の低干渉センサヘッド(30)。
- 前記センサチップ(32)は、Si(Li)検出器、HPGe検出器、PINダイオード、コネクタ半導体から成る検出器、外部トランジスタを備えたシリコンドリフト検出器(SDD)、又は一体形FETを備えたシリコンドリフト検出器(I−FET SDD)である、請求項1〜11の何れか一項に記載の低干渉センサヘッド(30)。
- 前記プリント回路基板(10)は、多層コンパウンドセラミックである、請求項1〜12の何れか一項に記載の低干渉センサヘッド(30)。
- 請求項1〜13の何れか一項に記載の低干渉センサヘッド(30)を備えた放射線検出器(74)。
- 荷電粒子のための光学系を備えた顕微鏡において、
請求項1〜13の何れか一項に記載の低干渉センサヘッド(30)又は請求項14記載の放射線検出器(74)を備えたことを特徴とする顕微鏡。
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DE102009026946.0 | 2009-06-15 | ||
DE102009026946A DE102009026946B4 (de) | 2009-06-15 | 2009-06-15 | Störungsarmer Sensorkopf für einen Strahlungsdetektor sowie diesen störungsarmen Sensorkopf enthaltender Strahlungsdetektor |
PCT/EP2010/058361 WO2010146044A1 (de) | 2009-06-15 | 2010-06-15 | Störungsarmer sensorkopf für einen strahlungsdetektor sowie diesen störungsarmen sensorkopf enthaltender strahlungsdetektor |
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JP2012530252A JP2012530252A (ja) | 2012-11-29 |
JP6196774B2 true JP6196774B2 (ja) | 2017-09-13 |
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US (1) | US9299532B2 (ja) |
EP (1) | EP2443645B1 (ja) |
JP (1) | JP6196774B2 (ja) |
DE (1) | DE102009026946B4 (ja) |
DK (1) | DK2443645T3 (ja) |
WO (1) | WO2010146044A1 (ja) |
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DE102011104489A1 (de) | 2011-06-17 | 2012-12-20 | Pndetector Gmbh | Halbleiterdriftdetektor und entsprechendes Betriebsverfahren |
DE102012213130A1 (de) | 2012-07-26 | 2014-01-30 | Bruker Nano Gmbh | Mehrfachmodul-Photonendetektor und seine Verwendung |
JP5600722B2 (ja) * | 2012-11-02 | 2014-10-01 | 株式会社堀場製作所 | 放射線検出器、放射線検出装置、及びx線分析装置 |
EP2881995B1 (en) * | 2013-12-09 | 2020-07-15 | Oxford Instruments Technologies Oy | Semiconductor radiation detector with large active area, and method for its manufacture |
JP6346016B2 (ja) * | 2014-07-17 | 2018-06-20 | 日本電子株式会社 | 放射線分析装置 |
JP6563258B2 (ja) * | 2015-06-11 | 2019-08-21 | 日本電子株式会社 | 放射線検出器およびその製造方法 |
US9818577B2 (en) * | 2016-01-25 | 2017-11-14 | Applied Materials Israel Ltd. | Multi mode system with a dispersion X-ray detector |
US10074513B2 (en) | 2016-01-25 | 2018-09-11 | Applied Materials Israel Ltd. | Multi mode systems with retractable detectors |
JP7132946B2 (ja) * | 2017-12-15 | 2022-09-07 | 株式会社堀場製作所 | 放射線検出器及び放射線検出装置 |
CN110376229B (zh) | 2019-06-12 | 2020-09-04 | 聚束科技(北京)有限公司 | 具备复合式探测系统的扫描电子显微镜和样品探测方法 |
JP2022143666A (ja) * | 2021-03-18 | 2022-10-03 | コニカミノルタ株式会社 | 放射線撮影装置 |
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DE102009026946A1 (de) | 2010-12-30 |
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US20120132818A1 (en) | 2012-05-31 |
EP2443645B1 (de) | 2019-08-07 |
WO2010146044A1 (de) | 2010-12-23 |
US9299532B2 (en) | 2016-03-29 |
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EP2443645A1 (de) | 2012-04-25 |
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