JP6190175B2 - 固体撮像装置の製造方法 - Google Patents

固体撮像装置の製造方法 Download PDF

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Publication number
JP6190175B2
JP6190175B2 JP2013129031A JP2013129031A JP6190175B2 JP 6190175 B2 JP6190175 B2 JP 6190175B2 JP 2013129031 A JP2013129031 A JP 2013129031A JP 2013129031 A JP2013129031 A JP 2013129031A JP 6190175 B2 JP6190175 B2 JP 6190175B2
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JP
Japan
Prior art keywords
film
imaging device
state imaging
gpa
solid
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Expired - Fee Related
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JP2013129031A
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English (en)
Japanese (ja)
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JP2015005578A5 (https=
JP2015005578A (ja
Inventor
裕介 塚越
裕介 塚越
俊介 中塚
俊介 中塚
孝泰 金定
孝泰 金定
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Canon Inc
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Canon Inc
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2013129031A priority Critical patent/JP6190175B2/ja
Priority to US14/294,484 priority patent/US9601533B2/en
Publication of JP2015005578A publication Critical patent/JP2015005578A/ja
Publication of JP2015005578A5 publication Critical patent/JP2015005578A5/ja
Application granted granted Critical
Publication of JP6190175B2 publication Critical patent/JP6190175B2/ja
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements

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  • Solid State Image Pick-Up Elements (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
JP2013129031A 2013-06-19 2013-06-19 固体撮像装置の製造方法 Expired - Fee Related JP6190175B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2013129031A JP6190175B2 (ja) 2013-06-19 2013-06-19 固体撮像装置の製造方法
US14/294,484 US9601533B2 (en) 2013-06-19 2014-06-03 Solid-state imaging apparatus, method of manufacturing the same, and camera

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013129031A JP6190175B2 (ja) 2013-06-19 2013-06-19 固体撮像装置の製造方法

Publications (3)

Publication Number Publication Date
JP2015005578A JP2015005578A (ja) 2015-01-08
JP2015005578A5 JP2015005578A5 (https=) 2016-06-23
JP6190175B2 true JP6190175B2 (ja) 2017-08-30

Family

ID=52110623

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013129031A Expired - Fee Related JP6190175B2 (ja) 2013-06-19 2013-06-19 固体撮像装置の製造方法

Country Status (2)

Country Link
US (1) US9601533B2 (https=)
JP (1) JP6190175B2 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6577724B2 (ja) 2015-03-13 2019-09-18 キヤノン株式会社 固体撮像装置の製造方法
CN107895733A (zh) * 2017-11-16 2018-04-10 上海华力微电子有限公司 一种降低逻辑器件金属突出缺陷的方法
TWI646678B (zh) * 2017-12-07 2019-01-01 晶相光電股份有限公司 影像感測裝置

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6537733B2 (en) * 2001-02-23 2003-03-25 Applied Materials, Inc. Method of depositing low dielectric constant silicon carbide layers
JP2006120800A (ja) * 2004-10-20 2006-05-11 Sony Corp Ｃｍｏｓ固体撮像素子
JP2006128383A (ja) * 2004-10-28 2006-05-18 Canon Inc 固体撮像素子及びその製造方法
US7425392B2 (en) * 2005-08-26 2008-09-16 Motorola, Inc. Lithographic template and method of formation and use
JP4130211B2 (ja) * 2006-05-31 2008-08-06 三洋電機株式会社 撮像装置
JP2008166677A (ja) * 2006-12-08 2008-07-17 Sony Corp 固体撮像装置とその製造方法並びにカメラ
JP2008192951A (ja) * 2007-02-07 2008-08-21 Matsushita Electric Ind Co Ltd 固体撮像装置およびその製造方法
JP2009272596A (ja) * 2008-04-09 2009-11-19 Sony Corp 固体撮像装置とその製造方法、及び電子機器
EP2109143B1 (en) * 2008-04-09 2013-05-29 Sony Corporation Solid-state imaging device, production method thereof, and electronic device
JP5235565B2 (ja) 2008-08-27 2013-07-10 キヤノン株式会社 撮像センサ及び撮像装置
JP5644057B2 (ja) * 2009-03-12 2014-12-24 ソニー株式会社 固体撮像装置とその製造方法および撮像装置
JP5212246B2 (ja) 2009-04-24 2013-06-19 ソニー株式会社 固体撮像素子及び固体撮像素子の製造方法
JP2010283145A (ja) 2009-06-04 2010-12-16 Sony Corp 固体撮像素子及びその製造方法、電子機器
JP2011119362A (ja) * 2009-12-01 2011-06-16 Panasonic Corp 半導体撮像装置及びその製造方法
JP5921129B2 (ja) * 2011-02-09 2016-05-24 キヤノン株式会社 固体撮像装置、及び固体撮像装置の製造方法
JP2013004685A (ja) 2011-06-15 2013-01-07 Canon Inc 固体撮像装置の製造方法
US8896125B2 (en) * 2011-07-05 2014-11-25 Sony Corporation Semiconductor device, fabrication method for a semiconductor device and electronic apparatus
JP5982748B2 (ja) * 2011-08-01 2016-08-31 ソニー株式会社 半導体装置、半導体装置の製造方法、および電子機器

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Publication number Publication date
US9601533B2 (en) 2017-03-21
JP2015005578A (ja) 2015-01-08
US20140375853A1 (en) 2014-12-25

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