JP6181955B2 - レジスト組成物及びレジストパターン形成方法 - Google Patents
レジスト組成物及びレジストパターン形成方法 Download PDFInfo
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- JP6181955B2 JP6181955B2 JP2013064407A JP2013064407A JP6181955B2 JP 6181955 B2 JP6181955 B2 JP 6181955B2 JP 2013064407 A JP2013064407 A JP 2013064407A JP 2013064407 A JP2013064407 A JP 2013064407A JP 6181955 B2 JP6181955 B2 JP 6181955B2
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- 0 CC(C(C1)C2)*(C3)C1C2S3(=O)=O Chemical compound CC(C(C1)C2)*(C3)C1C2S3(=O)=O 0.000 description 19
- VSSIKWWFNUXXRS-UHFFFAOYSA-N CC(C1C2)C(C3)OC1C3S2(=O)=O Chemical compound CC(C1C2)C(C3)OC1C3S2(=O)=O VSSIKWWFNUXXRS-UHFFFAOYSA-N 0.000 description 1
- CMJLMPKFQPJDKP-UHFFFAOYSA-N CC(CC1)CS1(=O)=O Chemical compound CC(CC1)CS1(=O)=O CMJLMPKFQPJDKP-UHFFFAOYSA-N 0.000 description 1
- UYGXSMYEXVBEQC-UHFFFAOYSA-N COC(COc(cc1)c(cccc2)c2c1S1CCCC1)=O Chemical compound COC(COc(cc1)c(cccc2)c2c1S1CCCC1)=O UYGXSMYEXVBEQC-UHFFFAOYSA-N 0.000 description 1
- AZTLFCORVZUQBD-UHFFFAOYSA-N Cc(cc(cc1C)S2c3ccccc3-c3c2cccc3)c1O Chemical compound Cc(cc(cc1C)S2c3ccccc3-c3c2cccc3)c1O AZTLFCORVZUQBD-UHFFFAOYSA-N 0.000 description 1
- YYGAEIOUDPZXLB-UHFFFAOYSA-N Cc1cc(P2CCCCC2)cc(C)c1OC(C1(C2)C(C(C3)C4)C23CC4C1)=O Chemical compound Cc1cc(P2CCCCC2)cc(C)c1OC(C1(C2)C(C(C3)C4)C23CC4C1)=O YYGAEIOUDPZXLB-UHFFFAOYSA-N 0.000 description 1
- ZVSJSFTVYMOFNH-UHFFFAOYSA-N c(cc1)ccc1S1c2ccccc2-c2c1cccc2 Chemical compound c(cc1)ccc1S1c2ccccc2-c2c1cccc2 ZVSJSFTVYMOFNH-UHFFFAOYSA-N 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D498/00—Heterocyclic compounds containing in the condensed system at least one hetero ring having nitrogen and oxygen atoms as the only ring hetero atoms
- C07D498/02—Heterocyclic compounds containing in the condensed system at least one hetero ring having nitrogen and oxygen atoms as the only ring hetero atoms in which the condensed system contains two hetero rings
- C07D498/04—Ortho-condensed systems
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Materials For Photolithography (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013064407A JP6181955B2 (ja) | 2013-03-26 | 2013-03-26 | レジスト組成物及びレジストパターン形成方法 |
TW103104410A TWI599849B (zh) | 2013-03-26 | 2014-02-11 | Photoresist composition and photoresist pattern formation method |
KR1020140033594A KR102206690B1 (ko) | 2013-03-26 | 2014-03-21 | 레지스트 조성물 및 레지스트 패턴 형성 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013064407A JP6181955B2 (ja) | 2013-03-26 | 2013-03-26 | レジスト組成物及びレジストパターン形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014191060A JP2014191060A (ja) | 2014-10-06 |
JP6181955B2 true JP6181955B2 (ja) | 2017-08-16 |
Family
ID=51837388
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013064407A Active JP6181955B2 (ja) | 2013-03-26 | 2013-03-26 | レジスト組成物及びレジストパターン形成方法 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP6181955B2 (zh) |
KR (1) | KR102206690B1 (zh) |
TW (1) | TWI599849B (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6518475B2 (ja) * | 2015-03-20 | 2019-05-22 | 東京応化工業株式会社 | レジスト組成物、レジストパターン形成方法、酸発生剤及び化合物 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3895224B2 (ja) | 2001-12-03 | 2007-03-22 | 東京応化工業株式会社 | ポジ型レジスト組成物及びそれを用いたレジストパターン形成方法 |
JP5009015B2 (ja) | 2007-03-22 | 2012-08-22 | 株式会社ダイセル | 電子吸引性置換基及びラクトン骨格を含む多環式エステル及びその高分子化合物、フォトレジスト組成物 |
JP2009025723A (ja) | 2007-07-23 | 2009-02-05 | Fujifilm Corp | ネガ型現像用レジスト組成物及びこれを用いたパターン形成方法 |
JP4513990B2 (ja) * | 2008-01-18 | 2010-07-28 | 信越化学工業株式会社 | ポジ型レジスト材料及びパターン形成方法 |
JP4513989B2 (ja) * | 2008-01-18 | 2010-07-28 | 信越化学工業株式会社 | ポジ型レジスト材料及びパターン形成方法 |
JP4771101B2 (ja) * | 2008-09-05 | 2011-09-14 | 信越化学工業株式会社 | ポジ型レジスト材料及びパターン形成方法 |
JP5315035B2 (ja) * | 2008-12-12 | 2013-10-16 | 富士フイルム株式会社 | 感活性光線または感放射線性樹脂組成物及びそれを用いたパターン形成方法 |
JP5499889B2 (ja) * | 2009-05-20 | 2014-05-21 | 信越化学工業株式会社 | スピロ環構造を有する酸脱離性エステル型単量体、高分子化合物、レジスト材料及びパターン形成方法 |
JP5206986B2 (ja) * | 2009-06-04 | 2013-06-12 | 信越化学工業株式会社 | ポジ型レジスト材料及びパターン形成方法 |
JP5514687B2 (ja) * | 2010-09-29 | 2014-06-04 | 富士フイルム株式会社 | 感活性光線性または感放射線性樹脂組成物、感活性光線性または感放射線性膜およびパターン形成方法 |
JP5666408B2 (ja) * | 2011-01-28 | 2015-02-12 | 信越化学工業株式会社 | レジスト組成物、及びこれを用いたパターン形成方法 |
JP5776580B2 (ja) * | 2011-02-25 | 2015-09-09 | 信越化学工業株式会社 | ポジ型レジスト材料及びこれを用いたパターン形成方法 |
JP5785754B2 (ja) | 2011-03-30 | 2015-09-30 | 富士フイルム株式会社 | パターン形成方法、及び、電子デバイスの製造方法 |
TWI450038B (zh) * | 2011-06-22 | 2014-08-21 | Shinetsu Chemical Co | 圖案形成方法及光阻組成物 |
JP5910361B2 (ja) * | 2011-07-14 | 2016-04-27 | 信越化学工業株式会社 | パターン形成方法及びレジスト組成物 |
-
2013
- 2013-03-26 JP JP2013064407A patent/JP6181955B2/ja active Active
-
2014
- 2014-02-11 TW TW103104410A patent/TWI599849B/zh active
- 2014-03-21 KR KR1020140033594A patent/KR102206690B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
KR20140117289A (ko) | 2014-10-07 |
TW201447490A (zh) | 2014-12-16 |
TWI599849B (zh) | 2017-09-21 |
JP2014191060A (ja) | 2014-10-06 |
KR102206690B1 (ko) | 2021-01-22 |
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