KR102206690B1 - 레지스트 조성물 및 레지스트 패턴 형성 방법 - Google Patents

레지스트 조성물 및 레지스트 패턴 형성 방법 Download PDF

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Publication number
KR102206690B1
KR102206690B1 KR1020140033594A KR20140033594A KR102206690B1 KR 102206690 B1 KR102206690 B1 KR 102206690B1 KR 1020140033594 A KR1020140033594 A KR 1020140033594A KR 20140033594 A KR20140033594 A KR 20140033594A KR 102206690 B1 KR102206690 B1 KR 102206690B1
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KR
South Korea
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group
formula
substituent
carbon atoms
atom
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KR1020140033594A
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English (en)
Korean (ko)
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KR20140117289A (ko
Inventor
츠요시 나카무라
가즈이시 단노
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도오꾜오까고오교 가부시끼가이샤
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Publication of KR20140117289A publication Critical patent/KR20140117289A/ko
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D498/00—Heterocyclic compounds containing in the condensed system at least one hetero ring having nitrogen and oxygen atoms as the only ring hetero atoms
    • C07D498/02—Heterocyclic compounds containing in the condensed system at least one hetero ring having nitrogen and oxygen atoms as the only ring hetero atoms in which the condensed system contains two hetero rings
    • C07D498/04—Ortho-condensed systems
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020140033594A 2013-03-26 2014-03-21 레지스트 조성물 및 레지스트 패턴 형성 방법 KR102206690B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2013-064407 2013-03-26
JP2013064407A JP6181955B2 (ja) 2013-03-26 2013-03-26 レジスト組成物及びレジストパターン形成方法

Publications (2)

Publication Number Publication Date
KR20140117289A KR20140117289A (ko) 2014-10-07
KR102206690B1 true KR102206690B1 (ko) 2021-01-22

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020140033594A KR102206690B1 (ko) 2013-03-26 2014-03-21 레지스트 조성물 및 레지스트 패턴 형성 방법

Country Status (3)

Country Link
JP (1) JP6181955B2 (zh)
KR (1) KR102206690B1 (zh)
TW (1) TWI599849B (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6518475B2 (ja) * 2015-03-20 2019-05-22 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法、酸発生剤及び化合物

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010138330A (ja) * 2008-12-12 2010-06-24 Fujifilm Corp 感活性光線または感放射線性樹脂組成物及びそれを用いたパターン形成方法
JP2012073508A (ja) * 2010-09-29 2012-04-12 Fujifilm Corp 感活性光線性または感放射線性樹脂組成物、感活性光線性または感放射線性膜およびパターン形成方法
JP2012208432A (ja) 2011-03-30 2012-10-25 Fujifilm Corp パターン形成方法、感活性光線性又は感放射線性樹脂組成物、レジスト膜、電子デバイスの製造方法、及び、電子デバイス

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3895224B2 (ja) 2001-12-03 2007-03-22 東京応化工業株式会社 ポジ型レジスト組成物及びそれを用いたレジストパターン形成方法
JP5009015B2 (ja) 2007-03-22 2012-08-22 株式会社ダイセル 電子吸引性置換基及びラクトン骨格を含む多環式エステル及びその高分子化合物、フォトレジスト組成物
JP2009025723A (ja) 2007-07-23 2009-02-05 Fujifilm Corp ネガ型現像用レジスト組成物及びこれを用いたパターン形成方法
JP4513990B2 (ja) * 2008-01-18 2010-07-28 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法
JP4513989B2 (ja) * 2008-01-18 2010-07-28 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法
JP4771101B2 (ja) * 2008-09-05 2011-09-14 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法
JP5499889B2 (ja) * 2009-05-20 2014-05-21 信越化学工業株式会社 スピロ環構造を有する酸脱離性エステル型単量体、高分子化合物、レジスト材料及びパターン形成方法
JP5206986B2 (ja) * 2009-06-04 2013-06-12 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法
JP5666408B2 (ja) * 2011-01-28 2015-02-12 信越化学工業株式会社 レジスト組成物、及びこれを用いたパターン形成方法
JP5776580B2 (ja) * 2011-02-25 2015-09-09 信越化学工業株式会社 ポジ型レジスト材料及びこれを用いたパターン形成方法
TWI450038B (zh) * 2011-06-22 2014-08-21 Shinetsu Chemical Co 圖案形成方法及光阻組成物
JP5910361B2 (ja) * 2011-07-14 2016-04-27 信越化学工業株式会社 パターン形成方法及びレジスト組成物

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010138330A (ja) * 2008-12-12 2010-06-24 Fujifilm Corp 感活性光線または感放射線性樹脂組成物及びそれを用いたパターン形成方法
JP2012073508A (ja) * 2010-09-29 2012-04-12 Fujifilm Corp 感活性光線性または感放射線性樹脂組成物、感活性光線性または感放射線性膜およびパターン形成方法
JP2012208432A (ja) 2011-03-30 2012-10-25 Fujifilm Corp パターン形成方法、感活性光線性又は感放射線性樹脂組成物、レジスト膜、電子デバイスの製造方法、及び、電子デバイス

Also Published As

Publication number Publication date
JP6181955B2 (ja) 2017-08-16
KR20140117289A (ko) 2014-10-07
TW201447490A (zh) 2014-12-16
TWI599849B (zh) 2017-09-21
JP2014191060A (ja) 2014-10-06

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