JP6176249B2 - パッシベーション層付半導体基板及びその製造方法 - Google Patents

パッシベーション層付半導体基板及びその製造方法 Download PDF

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Publication number
JP6176249B2
JP6176249B2 JP2014525899A JP2014525899A JP6176249B2 JP 6176249 B2 JP6176249 B2 JP 6176249B2 JP 2014525899 A JP2014525899 A JP 2014525899A JP 2014525899 A JP2014525899 A JP 2014525899A JP 6176249 B2 JP6176249 B2 JP 6176249B2
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JP
Japan
Prior art keywords
passivation
oxide
layer
silicon substrate
group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2014525899A
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English (en)
Japanese (ja)
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JPWO2014014115A1 (ja
Inventor
剛 早坂
剛 早坂
吉田　誠人
誠人 吉田
野尻　剛
剛 野尻
倉田　靖
靖 倉田
田中　徹
徹 田中
明博 織田
明博 織田
修一郎 足立
修一郎 足立
服部　孝司
孝司 服部
三江子 松村
三江子 松村
敬司 渡邉
敬司 渡邉
真年 森下
真年 森下
浩孝 濱村
浩孝 濱村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Corp
Original Assignee
Hitachi Chemical Co Ltd
Showa Denko Materials Co Ltd
Resonac Corp
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Application filed by Hitachi Chemical Co Ltd, Showa Denko Materials Co Ltd, Resonac Corp filed Critical Hitachi Chemical Co Ltd
Publication of JPWO2014014115A1 publication Critical patent/JPWO2014014115A1/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868—Passivation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L2031/0344—Organic materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Formation Of Insulating Films (AREA)
  • Photovoltaic Devices (AREA)
JP2014525899A 2012-07-19 2013-07-19 パッシベーション層付半導体基板及びその製造方法 Expired - Fee Related JP6176249B2 (ja)

Applications Claiming Priority (11)

Application Number Priority Date Filing Date Title
JP2012160336 2012-07-19
JP2012160336 2012-07-19
JP2012218389 2012-09-28
JP2012218389 2012-09-28
JP2013011934 2013-01-25
JP2013011934 2013-01-25
JP2013040153 2013-02-28
JP2013040153 2013-02-28
JP2013103573 2013-05-15
JP2013103573 2013-05-15
PCT/JP2013/069705 WO2014014115A1 (ja) 2012-07-19 2013-07-19 パッシベーション層付半導体基板及びその製造方法

Publications (2)

Publication Number Publication Date
JPWO2014014115A1 JPWO2014014115A1 (ja) 2016-07-07
JP6176249B2 true JP6176249B2 (ja) 2017-08-09

Family

ID=49948935

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014525899A Expired - Fee Related JP6176249B2 (ja) 2012-07-19 2013-07-19 パッシベーション層付半導体基板及びその製造方法

Country Status (5)

Country Link
JP (1) JP6176249B2 (zh)
KR (1) KR20150036364A (zh)
CN (1) CN104488070A (zh)
TW (1) TW201410694A (zh)
WO (1) WO2014014115A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016002902A1 (ja) * 2014-07-04 2016-01-07 日立化成株式会社 パッシベーション層形成用組成物の製造方法、パッシベーション層付半導体基板及びその製造方法、太陽電池素子及びその製造方法、並びに太陽電池
CN106471626A (zh) * 2014-07-04 2017-03-01 日立化成株式会社 钝化层形成用组合物、带钝化层半导体基板及制法、太阳能电池元件及制法及太阳能电池

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000294817A (ja) * 1999-04-09 2000-10-20 Dainippon Printing Co Ltd 太陽電池モジュ−ル用表面保護シ−トおよびそれを使用した太陽電池モジュ−ル
JP2004359532A (ja) * 2003-04-09 2004-12-24 Jsr Corp タンタル酸化物膜形成用組成物、タンタル酸化物膜およびその製造方法
KR101528382B1 (ko) * 2007-10-17 2015-06-12 헤레우스 프레셔스 메탈즈 노스 아메리카 콘쇼호켄 엘엘씨 단면 후면 컨택 태양 전지용 유전성 코팅물
JP2012521947A (ja) * 2009-03-23 2012-09-20 エスビーエー マテリアルズ インク 新規な誘電体酸化物膜およびその製造方法
JP5899615B2 (ja) * 2010-03-18 2016-04-06 株式会社リコー 絶縁膜の製造方法及び半導体装置の製造方法
JP5633346B2 (ja) * 2009-12-25 2014-12-03 株式会社リコー 電界効果型トランジスタ、半導体メモリ、表示素子、画像表示装置及びシステム

Also Published As

Publication number Publication date
WO2014014115A1 (ja) 2014-01-23
KR20150036364A (ko) 2015-04-07
WO2014014115A9 (ja) 2014-07-31
JPWO2014014115A1 (ja) 2016-07-07
CN104488070A (zh) 2015-04-01
TW201410694A (zh) 2014-03-16

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