JP6172789B2 - レーザ装置 - Google Patents
レーザ装置 Download PDFInfo
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- JP6172789B2 JP6172789B2 JP2013047125A JP2013047125A JP6172789B2 JP 6172789 B2 JP6172789 B2 JP 6172789B2 JP 2013047125 A JP2013047125 A JP 2013047125A JP 2013047125 A JP2013047125 A JP 2013047125A JP 6172789 B2 JP6172789 B2 JP 6172789B2
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- 239000004038 photonic crystal Substances 0.000 claims description 153
- 230000003287 optical effect Effects 0.000 claims description 131
- 239000013078 crystal Substances 0.000 claims description 130
- 230000010287 polarization Effects 0.000 claims description 95
- 238000005253 cladding Methods 0.000 claims description 35
- 230000000737 periodic effect Effects 0.000 claims description 11
- 239000000758 substrate Substances 0.000 description 29
- 238000010586 diagram Methods 0.000 description 24
- 238000009826 distribution Methods 0.000 description 23
- 238000006243 chemical reaction Methods 0.000 description 22
- 239000004065 semiconductor Substances 0.000 description 12
- 230000010355 oscillation Effects 0.000 description 11
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 10
- 239000000853 adhesive Substances 0.000 description 9
- 230000001070 adhesive effect Effects 0.000 description 9
- 239000000203 mixture Substances 0.000 description 8
- 230000005672 electromagnetic field Effects 0.000 description 7
- 239000012535 impurity Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000013598 vector Substances 0.000 description 7
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000002994 raw material Substances 0.000 description 5
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 4
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 230000001427 coherent effect Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 241000975394 Evechinus chloroticus Species 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 230000004323 axial length Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000001131 transforming effect Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0092—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for nonlinear frequency conversion, e.g. second harmonic generation [SHG] or sum- or difference-frequency generation outside the laser cavity
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/353—Frequency conversion, i.e. wherein a light beam is generated with frequency components different from those of the incident light beams
- G02F1/3544—Particular phase matching techniques
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/355—Non-linear optics characterised by the materials used
- G02F1/3551—Crystals
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/355—Non-linear optics characterised by the materials used
- G02F1/3558—Poled materials, e.g. with periodic poling; Fabrication of domain inverted structures, e.g. for quasi-phase-matching [QPM]
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/37—Non-linear optics for second-harmonic generation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/11—Comprising a photonic bandgap structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/353—Frequency conversion, i.e. wherein a light beam is generated with frequency components different from those of the incident light beams
- G02F1/3544—Particular phase matching techniques
- G02F1/3548—Quasi phase matching [QPM], e.g. using a periodic domain inverted structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02438—Characterized by cooling of elements other than the laser chip, e.g. an optical element being part of an external cavity or a collimating lens
- H01S5/02446—Cooling being separate from the laser chip cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
- H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Lasers (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Lasers (AREA)
Description
非線形光学結晶:MgOドープLiNbO3(PPLN)
L2=35mm
L3=7μm
W2=0.5mm
異屈折率領域を構成する直角二等辺三角形の寸法:240nm(二等辺の長さ)
正方格子の格子線の間隔:320nm
Claims (3)
- フォトニック結晶面発光レーザ素子から出射されたレーザ光が入射する周期分極反転構造を有する非線形光学結晶を備えたレーザ装置であって、
前記フォトニック結晶面発光レーザ素子は、
活性層と、
前記活性層を挟む上部及び下部クラッド層と、
前記上部又は下部クラッド層と前記活性層との間に設けられたフォトニック結晶層と、
を備え、
前記フォトニック結晶層は、
第1屈折率媒質からなる基本層と、
前記第1屈折率媒質とは屈折率の異なる第2屈折率媒質からなり前記基本層内に存在する複数の異屈折率領域と、を備え、
複数の前記異屈折率領域は、前記フォトニック結晶層の主表面上に設定された正方格子における格子点位置に配置されており、
それぞれの前記異屈折率領域の平面形状は、概略直角二等辺三角形に設定されており、
この概略直角二等辺三角形の直角を構成する2辺が、前記正方格子を構成する縦の格子線及び横の格子線に沿って延びており、
この概略直角二等辺三角形の斜辺に平行又は垂直な向きと、前記周期分極反転構造における分極の向きとが一致していることを特徴とするレーザ装置。 - フォトニック結晶面発光レーザ素子から出射されたレーザ光が入射する周期分極反転構造を有する非線形光学結晶を備えたレーザ装置であって、
前記フォトニック結晶面発光レーザ素子は、
活性層と、
前記活性層を挟む上部及び下部クラッド層と、
前記上部又は下部クラッド層と前記活性層との間に設けられたフォトニック結晶層と、
を備え、
前記フォトニック結晶層は、
第1屈折率媒質からなる基本層と、
前記第1屈折率媒質とは屈折率の異なる第2屈折率媒質からなり前記基本層内に存在する複数の異屈折率領域と、
を備え、
複数の前記異屈折率領域は、前記フォトニック結晶層の主表面上に設定された正方格子における格子点位置に配置されており、
それぞれの前記異屈折率領域の平面形状は、概略正三角形に設定されており、
この概略正三角形の1つの頂点から底辺に下した垂線が、前記正方格子を構成する縦の格子線に沿って延びており、
この概略正三角形の前記底辺の向きと、前記周期分極反転構造における分極の向きとが一致していることを特徴とするレーザ装置。 - フォトニック結晶面発光レーザ素子から出射されたレーザ光が入射する周期分極反転構造を有する非線形光学結晶を備えたレーザ装置であって、
前記フォトニック結晶面発光レーザ素子は、
活性層と、
前記活性層を挟む上部及び下部クラッド層と、
前記上部又は下部クラッド層と前記活性層との間に設けられたフォトニック結晶層と、
を備え、
前記フォトニック結晶層は、
第1屈折率媒質からなる基本層と、
前記第1屈折率媒質とは屈折率の異なる第2屈折率媒質からなり前記基本層内に存在する複数の異屈折率領域と、
を備え、
複数の前記異屈折率領域は、前記フォトニック結晶層の主表面上に設定された正方格子における格子点位置に配置されており、
それぞれの前記異屈折率領域の平面形状は、概略直角台形に設定されており、
この概略直角台形における1つの直角を構成する2辺が、前記正方格子を構成する縦の格子線及び横の格子線に沿って延びており、
この概略直角台形の下底の向き又は前記下底と45°を成す向きと、前記周期分極反転構造における分極の向きとが一致していることを特徴とするレーザ装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013047125A JP6172789B2 (ja) | 2013-03-08 | 2013-03-08 | レーザ装置 |
DE112014001188.6T DE112014001188T5 (de) | 2013-03-08 | 2014-03-07 | Laservorrichtung |
US14/772,459 US9698562B2 (en) | 2013-03-08 | 2014-03-07 | Laser device |
PCT/JP2014/055994 WO2014136943A1 (ja) | 2013-03-08 | 2014-03-07 | レーザ装置 |
CN201480013107.8A CN105191028B (zh) | 2013-03-08 | 2014-03-07 | 激光装置 |
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JP2013047125A JP6172789B2 (ja) | 2013-03-08 | 2013-03-08 | レーザ装置 |
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JP2017128008A Division JP6355178B2 (ja) | 2017-06-29 | 2017-06-29 | レーザ装置 |
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JP2014175488A JP2014175488A (ja) | 2014-09-22 |
JP6172789B2 true JP6172789B2 (ja) | 2017-08-02 |
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Country Status (5)
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US (1) | US9698562B2 (ja) |
JP (1) | JP6172789B2 (ja) |
CN (1) | CN105191028B (ja) |
DE (1) | DE112014001188T5 (ja) |
WO (1) | WO2014136943A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016148075A1 (ja) | 2015-03-13 | 2016-09-22 | 浜松ホトニクス株式会社 | 半導体発光素子 |
DE112016003950T5 (de) | 2015-08-28 | 2018-05-17 | Hamamatsu Photonics K.K. | Oberflächenemittierender laser mit zweidimensionalem photonischen kristall |
JP6743602B2 (ja) * | 2016-09-09 | 2020-08-19 | 株式会社村田製作所 | 複合電子部品および抵抗素子 |
JP6513626B2 (ja) * | 2016-12-01 | 2019-05-15 | 株式会社東芝 | フォトニック結晶内蔵基板およびその製造方法、並びに面発光量子カスケードレーザ |
US10490979B2 (en) | 2017-12-27 | 2019-11-26 | Kabushiki Kaisha Toshiba | Substrate including photonic crystal and method for manufacturing the same, and surface emitting quantum cascade laser |
CN115004098A (zh) * | 2019-12-03 | 2022-09-02 | 加州理工学院 | 非烧蚀多光子和非线性过程中可替代脉冲激光的纠缠光子源 |
CN113411132B (zh) * | 2021-06-17 | 2023-03-31 | 桂林电子科技大学 | 多功能光中继器系统 |
CN113411129B (zh) * | 2021-06-17 | 2023-03-31 | 桂林电子科技大学 | 用于光通信的双工系统 |
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JPH06347848A (ja) * | 1993-06-08 | 1994-12-22 | Hitachi Metals Ltd | 第二高調波発生装置 |
JP4185697B2 (ja) * | 2002-03-14 | 2008-11-26 | 独立行政法人科学技術振興機構 | 2次元フォトニック結晶面発光レーザアレイ及び2次元フォトニック結晶面発光レーザ |
US6859304B2 (en) * | 2002-08-09 | 2005-02-22 | Energy Conversion Devices, Inc. | Photonic crystals and devices having tunability and switchability |
JP5224310B2 (ja) * | 2006-08-31 | 2013-07-03 | 古河電気工業株式会社 | 垂直共振器型面発光レーザ |
JP2010219307A (ja) * | 2009-03-17 | 2010-09-30 | Seiko Epson Corp | 光源装置、プロジェクター |
US20120273911A1 (en) | 2010-01-07 | 2012-11-01 | Kyoto University | Photoelectric transducer |
CN102201648B (zh) | 2011-04-14 | 2012-05-02 | 中国科学院半导体研究所 | Fp腔增强型电注入光子晶体带边面发射激光器 |
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2013
- 2013-03-08 JP JP2013047125A patent/JP6172789B2/ja active Active
-
2014
- 2014-03-07 US US14/772,459 patent/US9698562B2/en active Active
- 2014-03-07 CN CN201480013107.8A patent/CN105191028B/zh active Active
- 2014-03-07 DE DE112014001188.6T patent/DE112014001188T5/de active Pending
- 2014-03-07 WO PCT/JP2014/055994 patent/WO2014136943A1/ja active Application Filing
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US9698562B2 (en) | 2017-07-04 |
CN105191028B (zh) | 2018-05-04 |
US20160020576A1 (en) | 2016-01-21 |
DE112014001188T5 (de) | 2015-11-26 |
JP2014175488A (ja) | 2014-09-22 |
CN105191028A (zh) | 2015-12-23 |
WO2014136943A1 (ja) | 2014-09-12 |
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