JP6355178B2 - レーザ装置 - Google Patents
レーザ装置 Download PDFInfo
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- JP6355178B2 JP6355178B2 JP2017128008A JP2017128008A JP6355178B2 JP 6355178 B2 JP6355178 B2 JP 6355178B2 JP 2017128008 A JP2017128008 A JP 2017128008A JP 2017128008 A JP2017128008 A JP 2017128008A JP 6355178 B2 JP6355178 B2 JP 6355178B2
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- Prior art keywords
- refractive index
- layer
- photonic crystal
- nonlinear optical
- laser
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- 239000004038 photonic crystal Substances 0.000 claims description 150
- 239000013078 crystal Substances 0.000 claims description 129
- 230000003287 optical effect Effects 0.000 claims description 126
- 230000010287 polarization Effects 0.000 claims description 97
- 238000005253 cladding Methods 0.000 claims description 33
- 230000000737 periodic effect Effects 0.000 claims description 13
- 239000000758 substrate Substances 0.000 description 29
- 238000010586 diagram Methods 0.000 description 24
- 238000009826 distribution Methods 0.000 description 23
- 238000006243 chemical reaction Methods 0.000 description 22
- 239000004065 semiconductor Substances 0.000 description 12
- 230000010355 oscillation Effects 0.000 description 11
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 10
- 239000000853 adhesive Substances 0.000 description 9
- 230000001070 adhesive effect Effects 0.000 description 9
- 239000000203 mixture Substances 0.000 description 8
- 230000005672 electromagnetic field Effects 0.000 description 7
- 239000012535 impurity Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000013598 vector Substances 0.000 description 7
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000002994 raw material Substances 0.000 description 5
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 4
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 230000001427 coherent effect Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 230000004323 axial length Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000001131 transforming effect Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
Description
非線形光学結晶:MgOドープLiNbO3(PPLN)
L2=35mm
L3=7μm
W2=0.5mm
異屈折率領域を構成する直角二等辺三角形の寸法:240nm(二等辺の長さ)
正方格子の格子線の間隔:320nm
Claims (2)
- フォトニック結晶面発光レーザ素子から出射されたレーザ光が入射する周期分極反転構造を有する非線形光学結晶を備えたレーザ装置であって、
前記フォトニック結晶面発光レーザ素子は、
活性層と、
前記活性層を挟む上部及び下部クラッド層と、
前記上部又は下部クラッド層と前記活性層との間に設けられたフォトニック結晶層と、
を備え、
前記フォトニック結晶層は、
第1屈折率媒質からなる基本層と、
前記第1屈折率媒質とは屈折率の異なる第2屈折率媒質からなり前記基本層内に存在する複数の異屈折率領域と、
を備え、
複数の前記異屈折率領域は、前記フォトニック結晶層の主表面上に設定された三角格子における格子点位置に配置されており、
それぞれの前記異屈折率領域の平面形状は、概略直角二等辺三角形に設定されており、前記概略直角二等辺三角形の直角を構成する1辺が、前記三角格子を構成する1本の格子線に沿って延びており、
前記フォトニック結晶面発光レーザ素子の偏光方向と、前記周期分極反転構造における分極の向きとが一致していることを特徴とするレーザ装置。 - フォトニック結晶面発光レーザ素子から出射されたレーザ光が入射する周期分極反転構造を有する非線形光学結晶を備えたレーザ装置であって、
前記フォトニック結晶面発光レーザ素子は、
活性層と、
前記活性層を挟む上部及び下部クラッド層と、
前記上部又は下部クラッド層と前記活性層との間に設けられたフォトニック結晶層と、
を備え、
前記フォトニック結晶層は、
第1屈折率媒質からなる基本層と、
前記第1屈折率媒質とは屈折率の異なる第2屈折率媒質からなり前記基本層内に存在する複数の異屈折率領域と、
を備え、
複数の前記異屈折率領域は、前記フォトニック結晶層の主表面上に設定された三角格子における格子点位置に配置されており、
それぞれの前記異屈折率領域の平面形状は、概略直角台形に設定されており、
前記概略直角台形における高さを規定する1辺が、前記三角格子を構成する1本の格子線に沿って延びており、
前記フォトニック結晶面発光レーザ素子の偏光方向と、前記周期分極反転構造における分極の向きとが一致していることを特徴とするレーザ装置。
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JP2017128008A JP6355178B2 (ja) | 2017-06-29 | 2017-06-29 | レーザ装置 |
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JP2017128008A JP6355178B2 (ja) | 2017-06-29 | 2017-06-29 | レーザ装置 |
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JP2013047125A Division JP6172789B2 (ja) | 2013-03-08 | 2013-03-08 | レーザ装置 |
Publications (2)
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JP6355178B2 true JP6355178B2 (ja) | 2018-07-11 |
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Families Citing this family (2)
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CN112501425B (zh) * | 2020-11-27 | 2021-08-27 | 山东大学 | 一种具有反高斯分布冲击波强度的激光表面强化方法 |
DE102021116674A1 (de) | 2021-06-29 | 2022-12-29 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches bauelement und verfahren zum herstellen eines optoelektronischen bauelements |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002069462A1 (en) * | 2001-02-15 | 2002-09-06 | Aculight Corporation | External frequency conversion of surface-emitting diode lasers |
JP4185697B2 (ja) * | 2002-03-14 | 2008-11-26 | 独立行政法人科学技術振興機構 | 2次元フォトニック結晶面発光レーザアレイ及び2次元フォトニック結晶面発光レーザ |
JP4743867B2 (ja) * | 2006-02-28 | 2011-08-10 | キヤノン株式会社 | 面発光レーザ |
JP5138898B2 (ja) * | 2006-03-31 | 2013-02-06 | 国立大学法人京都大学 | 2次元フォトニック結晶面発光レーザ光源 |
JP2010219307A (ja) * | 2009-03-17 | 2010-09-30 | Seiko Epson Corp | 光源装置、プロジェクター |
JP5549011B2 (ja) * | 2010-07-30 | 2014-07-16 | 浜松ホトニクス株式会社 | 半導体面発光素子及びその製造方法 |
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