JP6169614B2 - プラズモン電極を有する光伝導装置 - Google Patents
プラズモン電極を有する光伝導装置 Download PDFInfo
- Publication number
- JP6169614B2 JP6169614B2 JP2014553536A JP2014553536A JP6169614B2 JP 6169614 B2 JP6169614 B2 JP 6169614B2 JP 2014553536 A JP2014553536 A JP 2014553536A JP 2014553536 A JP2014553536 A JP 2014553536A JP 6169614 B2 JP6169614 B2 JP 6169614B2
- Authority
- JP
- Japan
- Prior art keywords
- plasmon
- photoconductive
- terahertz
- contact electrode
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/02—Details
- G01J3/10—Arrangements of light sources specially adapted for spectrometry or colorimetry
- G01J3/108—Arrangements of light sources specially adapted for spectrometry or colorimetry for measurement in the infrared range
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
- H10F77/143—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies comprising quantum structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/40—Optical elements or arrangements
- H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/831—Electrodes characterised by their shape
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261589486P | 2012-01-23 | 2012-01-23 | |
| US61/589,486 | 2012-01-23 | ||
| PCT/US2013/022776 WO2013112608A1 (en) | 2012-01-23 | 2013-01-23 | Photoconductive device with plasmonic electrodes |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015513067A JP2015513067A (ja) | 2015-04-30 |
| JP2015513067A5 JP2015513067A5 (enExample) | 2016-03-10 |
| JP6169614B2 true JP6169614B2 (ja) | 2017-07-26 |
Family
ID=48873872
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014553536A Active JP6169614B2 (ja) | 2012-01-23 | 2013-01-23 | プラズモン電極を有する光伝導装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (3) | US9804026B2 (enExample) |
| EP (1) | EP2807675B1 (enExample) |
| JP (1) | JP6169614B2 (enExample) |
| WO (1) | WO2013112608A1 (enExample) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11112305B2 (en) | 2012-01-23 | 2021-09-07 | The Regents Of The University Of California | Photoconductive detector device with plasmonic electrodes |
| US11249017B2 (en) | 2017-04-20 | 2022-02-15 | The Regents Of The University Of California | Systems and methods for high frequency nanoscopy |
| US11906424B2 (en) | 2019-10-01 | 2024-02-20 | The Regents Of The University Of California | Method for identifying chemical and structural variations through terahertz time-domain spectroscopy |
| US12066380B2 (en) | 2019-10-31 | 2024-08-20 | The Regents Of The University Of California | Methods and systems for detecting water status in plants using terahertz radiation |
| US12498615B2 (en) | 2021-12-01 | 2025-12-16 | The Regents Of The University Of California | Systems and methods for wavelength conversion through plasmon-coupled surface states |
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| US9553678B2 (en) * | 2012-05-31 | 2017-01-24 | Electronics And Telecommunications Research Institute | Interconnection apparatus and method using terahertz waves |
| US10620431B2 (en) * | 2013-01-29 | 2020-04-14 | The Trustees Of Columbia University In The City Of New York | System, method and computer-accessible medium for depth of field imaging for three-dimensional sensing utilizing a spatial light modulator microscope arrangement |
| US9825712B2 (en) | 2013-12-06 | 2017-11-21 | Georgia Tech Research Corporation | Ultra massive MIMO communication in the terahertz band |
| US9397758B2 (en) | 2013-12-06 | 2016-07-19 | Georgia Tech Research Corporation | Graphene-based plasmonic nano-transceiver employing HEMT for terahertz band communication |
| JP6299958B2 (ja) * | 2014-01-30 | 2018-03-28 | セイコーエプソン株式会社 | 光伝導アンテナ、カメラ、イメージング装置、および計測装置 |
| US10120263B2 (en) * | 2014-06-13 | 2018-11-06 | The Regents Of The University Of California | Low-duty-cycle continuous-wave photoconductive terahertz imaging and spectroscopy systems |
| KR101626806B1 (ko) * | 2014-07-25 | 2016-06-09 | 한국해양대학교 산학협력단 | 주파수 변조가 가능한 고효율 테라헤르츠 트랜스시버 |
| US9618824B2 (en) * | 2014-09-27 | 2017-04-11 | Intel Corporation | Integrated Terahertz sensor |
| WO2016136186A1 (en) | 2015-02-26 | 2016-09-01 | Canon Kabushiki Kaisha | Photoconductive element, method for manufacturing the same, and measuring apparatus |
| US10863895B2 (en) | 2015-05-27 | 2020-12-15 | The Regents Of The University Of California | Terahertz endoscopy through laser-driven terahertz sources and detectors |
| EP3314696A4 (en) * | 2015-06-23 | 2019-02-20 | The Government of the United States of America as represented by the Secretary of the Navy | LIGHT-LINE TERAHERTZ GROUP ANTENNA WITH HIGH PERFORMANCE |
| NL2015262B9 (en) * | 2015-08-04 | 2017-04-10 | Univ Delft Tech | Photoconductive antenna array. |
| US11081604B2 (en) * | 2015-08-17 | 2021-08-03 | Ton Duc Thang University | Device and method for bowtie photoconductive antenna for terahertz wave detection |
| JP2017045802A (ja) * | 2015-08-25 | 2017-03-02 | キヤノン株式会社 | 光伝導素子 |
| WO2017038714A1 (ja) * | 2015-08-28 | 2017-03-09 | 国立大学法人大阪大学 | 測定用デバイス、及びそれを用いた測定装置 |
| JP6693651B2 (ja) * | 2015-08-28 | 2020-05-13 | 国立研究開発法人物質・材料研究機構 | 偏光可変エミッタのバイアス分布を決定する方法 |
| CN105428964B (zh) * | 2015-11-11 | 2019-02-05 | 清华大学 | 石墨烯太赫兹发射器及其制作方法 |
| WO2017083840A1 (en) * | 2015-11-13 | 2017-05-18 | Uvic Industry Partnerships Inc. | Plasmon-enhanced below bandgap photoconductive terahertz generation and detection |
| KR102257556B1 (ko) * | 2016-03-03 | 2021-05-31 | 한국전자통신연구원 | 테라헤르츠파 발생 장치 및 이를 이용한 테라헤르츠 파면 제어 방법 |
| EP3441749B1 (en) * | 2016-04-05 | 2023-11-22 | Advanced Bio-Spectroscopy Co., Ltd. | Method for observing dynamic physical property of biological tissue, and device for observing dynamic physical property of biological tissue |
| US9804303B1 (en) * | 2016-04-06 | 2017-10-31 | Elwha Llc | Systems for tunable nanocube plasmonic resonators and methods for forming |
| US10439093B2 (en) * | 2016-04-15 | 2019-10-08 | Arizon Board Of Regents On Behalf Of Arizona State University | Antenna-assisted photovoltaic graphene detectors |
| WO2017214512A1 (en) * | 2016-06-09 | 2017-12-14 | The Regents Of The University Of California | Graphene-based semiconductor chip for tunable thz plasmon generation |
| US10725131B2 (en) * | 2016-09-06 | 2020-07-28 | The Royal Institution For The Advancement Of Learning/Mcgill University | Topologically-protected traveling-wave amplifier |
| RU2626220C1 (ru) * | 2016-10-24 | 2017-07-24 | Федеральное государственное бюджетное учреждение науки Институт физики твердого тела Российской академии наук (ИФТТ РАН) | Модулятор электромагнитного излучения субтерагерцового и терагерцового диапазона для систем высокоскоростной беспроводной связи |
| ES2866950T3 (es) * | 2017-12-22 | 2021-10-20 | Fundacio Inst De Ciencies Fotòniques | Un dispositivo para operar con radiación de THz y/o de infrarrojos y/o de microondas |
| US11385104B2 (en) | 2017-12-22 | 2022-07-12 | Arizona Board Of Regents On Behalf Of Arizona State University | On-chip polarization detection and polarimetric imaging |
| EP3505887B1 (en) * | 2017-12-29 | 2022-11-09 | IMEC vzw | Detector device with photoconductive body |
| BR102018000636A2 (pt) * | 2018-01-11 | 2019-07-30 | Universidade Federal Do Pará | Circulador controlável de três portas de grafeno tipo-w na faixa de thz |
| WO2019195140A1 (en) | 2018-04-02 | 2019-10-10 | The Regents Of The University Of California | System and method for photomixer -based heterodyne high-frequency spectrometer and receiver |
| US11237103B2 (en) * | 2018-05-31 | 2022-02-01 | Socovar Sec | Electronic device testing system, electronic device production system including same and method of testing an electronic device |
| RU2731166C2 (ru) * | 2018-07-19 | 2020-08-31 | Федеральное государственное автономное научное учреждение Институт сверхвысокочастотной полупроводниковой электроники имени В.Г. Мокерова Российской академии наук (ФГАНУ ИСВЧПЭ РАН, ИСВЧПЭ РАН) | Способ изготовления фотопроводящих антенн |
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| CN110398793B (zh) * | 2019-04-02 | 2021-05-25 | 西安理工大学 | 一种基于全介质的光可调双带太赫兹吸收器及制作方法 |
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- 2013-01-23 JP JP2014553536A patent/JP6169614B2/ja active Active
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11112305B2 (en) | 2012-01-23 | 2021-09-07 | The Regents Of The University Of California | Photoconductive detector device with plasmonic electrodes |
| US11231318B2 (en) | 2012-01-23 | 2022-01-25 | The Regents Of The University Of California | Photoconductive detector device with plasmonic electrodes |
| US11249017B2 (en) | 2017-04-20 | 2022-02-15 | The Regents Of The University Of California | Systems and methods for high frequency nanoscopy |
| US11906424B2 (en) | 2019-10-01 | 2024-02-20 | The Regents Of The University Of California | Method for identifying chemical and structural variations through terahertz time-domain spectroscopy |
| US12066380B2 (en) | 2019-10-31 | 2024-08-20 | The Regents Of The University Of California | Methods and systems for detecting water status in plants using terahertz radiation |
| US12498615B2 (en) | 2021-12-01 | 2025-12-16 | The Regents Of The University Of California | Systems and methods for wavelength conversion through plasmon-coupled surface states |
Also Published As
| Publication number | Publication date |
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| EP2807675B1 (en) | 2018-09-05 |
| WO2013112608A1 (en) | 2013-08-01 |
| US20140346357A1 (en) | 2014-11-27 |
| US11231318B2 (en) | 2022-01-25 |
| EP2807675A4 (en) | 2015-11-11 |
| JP2015513067A (ja) | 2015-04-30 |
| US9804026B2 (en) | 2017-10-31 |
| EP2807675A1 (en) | 2014-12-03 |
| US11112305B2 (en) | 2021-09-07 |
| US20180058931A1 (en) | 2018-03-01 |
| US20200264048A1 (en) | 2020-08-20 |
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