WO2011129690A2 - A generator of terahertz radiation - Google Patents

A generator of terahertz radiation Download PDF

Info

Publication number
WO2011129690A2
WO2011129690A2 PCT/NL2011/050245 NL2011050245W WO2011129690A2 WO 2011129690 A2 WO2011129690 A2 WO 2011129690A2 NL 2011050245 W NL2011050245 W NL 2011050245W WO 2011129690 A2 WO2011129690 A2 WO 2011129690A2
Authority
WO
WIPO (PCT)
Prior art keywords
terahertz
generator
radiation
photonic
laser
Prior art date
Application number
PCT/NL2011/050245
Other languages
French (fr)
Other versions
WO2011129690A3 (en
Inventor
Shangjiong Yang
Mirvais Yousefi
Original Assignee
Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Tno
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Tno filed Critical Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Tno
Publication of WO2011129690A2 publication Critical patent/WO2011129690A2/en
Publication of WO2011129690A3 publication Critical patent/WO2011129690A3/en

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/353—Frequency conversion, i.e. wherein a light beam is generated with frequency components different from those of the incident light beams
    • G02F1/3534—Three-wave interaction, e.g. sum-difference frequency generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
    • H01Q9/005—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements for radiating non-sinusoidal waves
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/32—Photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2203/00—Function characteristic
    • G02F2203/13—Function characteristic involving THZ radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0657—Mode locking, i.e. generation of pulses at a frequency corresponding to a roundtrip in the cavity

Definitions

  • the invention relates to a terahertz generator.
  • the invention further relates to an apparatus comprising the terahertz generator.
  • Electromagnetic radiation in the terahertz range may be an attractive means of generally harmless radiation which may broadly be applied, for example in the field of medical imaging, security, art, for example for paint inspection and so forth.
  • the terahertz radiation can penetrate into non-polar materials, such as plastics, wood, clothing and so on.
  • One of the advantages of the terahertz radiation is its high resolution, which may lie in the range of sub-millimeters.
  • Terahertz spectroscopy may be used for identification of specific materials, such as gases and explosives.
  • Terahertz radiation is strongly absorbed by metals and polar materials, such as water.
  • terahertz radiation may be used for skin cancer detection and localization during operation.
  • the terahertz radiation may be used, for example for carried detection and screening.
  • the terahertz radiation has high spectral molecular sensitivity. Accordingly, it may be used for biological sensing, including endoscopic applications. More in particular, it is considered that the terahertz radiation may complement MRI and ultrasound to analyze tissues, for example, tumor during a surgical procedure. For example, resection planes may be checked using the terahertz radiation for investigating whether the tumor resection was successful.
  • the terahertz radiation may be applied in the fields of quality control, materials science, archaeology, agriculture, moisture level sensing and soil analysis, biochemistry, biochip analysis, chemical detection, leakage inspection, astronomy, environmental monitoring and earth science, oil and gas, methanol detection, to name a few.
  • a terahertz generator is known from WO 2011036250.
  • a radiation source, a detector, and/or a modulator are provided for optically generating a signal and modulating and/or detecting in the terahertz (THz) frequency range.
  • the electro-optic component comprises a waveguide arrangement, based on silicon and/or germanium.
  • the waveguide arrangement, which is based on silicon and/or germanium has a silicon and/or germanium material with a surface which is chemically modified by a halogen enrichment and is electro-optically activated with the silicon and/or germanium material.
  • a further embodiment of a terahertz generator is known to be adapted to cooperate with two laser beams that are arranged to hit a photo- detector.
  • the wavelengths of the laser beams are detuned in frequency with respect to each other and thus force the carriers in the detector to follow the beat-note between the two beams resulting in a THz signal.
  • the detector is connected to a THz antenna that is arranged to steer the beam to the desired location.
  • This method relies strongly on the carrier dynamics of the detector and multiple stabilized lasers. In addition it requires expensive photo- detectors.
  • It is a disadvantage of this embodiment of the THz generator that it, being a free-space set-up, is largely subjected to strong environmental influences. Such influences may result in undesirable fluctuations in the performance of the THz generator.
  • the terahertz generator comprises an integrated semiconductor mode-locked laser, a photonic structure, a plasmonic structure and an antenna, wherein the semiconductor mode-locked laser, the photonic structure, the plasmonic structure and the antenna are integrated on the same photonic integrated circuit (PIC).
  • PIC photonic integrated circuit
  • a femto- second laser is particularly suitable to cooperate with a plasmonic structure for generating the terahertz radiation.
  • the mode-locked laser is preferably adapted to operate with a mode-spacing set to a value in the range between 0.01 - 100 THz, preferably in the range of 0.5 - 10 THz. It is found that a mode-locked laser is producing a suitable beat-note, corresponding to the mode-spacing of the laser. This beat-note is used in the invention for generation of the terahertz electromagnetic radiation.
  • the mode-locked laser may be set to any value between 100GHz and a few THz, depending on the laser characteristics. Those skilled in the art will readily appreciate how to properly select the locked-mode.
  • the photonic structure may comprise a waveguide or a coupler or any other suitable means for guiding the light emanating from the laser.
  • the laser light may be guided in a ridge-waveguide to a plasmonic structure. Accordingly, the light interacting with the plasmonic structure will excite the electrons of the structure at the beat- note (corresponding to the mode-locking frequency, desirably in the terahertz range). Due to the free electron gas in metals, this process is very efficient and robust.
  • the terahertz emission is then guided to a suitable THz antenna, via a photonic structure.
  • the plasmonic structure comprises a resonant metallic plasmonic wave guiding structure.
  • the plasmonic structure is adapted to generate surface plasmons upon interaction with a laser beam generated by the said laser. It is found that a certain structure is suitable for this purpose.
  • the terahertz generator may further comprise a detector for receiving radiation emitted by an object conceived to be irradiated with the THz radiation.
  • a detector for receiving radiation emitted by an object conceived to be irradiated with the THz radiation.
  • object may be selected from various fields, including living matter.
  • An apparatus comprises the terahertz generator as is set forth in the foregoing.
  • the apparatus further comprises a processor and a display.
  • Figure 1 presents in a schematic view an embodiment of the terahertz generator according to an aspect of the invention.
  • Figure 2a presents in a schematic way a top view of an embodiment of the terahertz generator according to a further aspect of the invention.
  • Figure 2b presents a 3D view of an embodiment shown in Figure 2a.
  • FIG. 1 presents in a schematic view an embodiment of the terahertz generator according to an aspect of the invention.
  • the terahertz generator 10 comprises an integrated semiconductor mode-locked laser 2, a photonic structure 4, a plasmonic structure 6 and an antenna 7, wherein the semiconductor mode-locked laser, the photonic structure, the plasmonic structure and the antenna are integrated on the same photonic integrated circuit (PIC) (shown in Figure 2b).
  • PIC photonic integrated circuit
  • the antenna is used for irradiation an object P, for example a person, a patient, or an item conceived to be investigated with the THz radiation thus generated in the plasmonic structure 6.
  • the integrated laser 2 may refer to a femto-second laser, which is found to be particularly suitable to cooperate with a plasmonic structure adapted to generate a surface plasmon.
  • a ridge-waveguide structure is used for interacting with the plasmonic structure 6 .
  • the photonic structure 4 may comprise a suitable waveguide or a coupler.
  • the laser signal interacting with the plasmonic structure 6 will excite the electrons of the structure at the beat- note (corresponding to the mode-locking frequency). Due to the free electron gas, this process is expected to be efficient and robust.
  • the emitted terahertz signal is guided into a suitable antenna 7.
  • the plasmonic structure and the antenna may comprise micro or nanostructures.
  • the radiation, emitted by the object P in response to the received terahertz radiation may be detected by a suitable detector 8.
  • the terahertz generator 10 may further comprise an embedded detector 9 for receiving radiation emitted by an object conceived to be irradiated with the THz radiation.
  • the external detector 8 is superfluous.
  • Figure 2a presents in a schematic way a top view of an embodiment of the terahertz generator according to a further aspect of the invention.
  • the stuctures are micro- or nano- dimensioned.
  • the device is chip-based, meaning that the laser source, the photonic guiding structure, the plasmonic structure, and the antenna are integrated and connected on one piece of chip.
  • Figure 2b presents in a schematic way a working device 30.
  • the device comprises the said chip which can comprise multiple stacks. It three- dimensionally comprises also the other needed components, i.e., the detector, modulator, amplifier, controlling electronics, interrogation electronics, etc. All the components are integrated together on a small scale. They communicate with each other via electronic or photonic connections, vertically or
  • Wireless communication is also applicable, in a short range or long range.

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Lasers (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

Abstract

The invention relates to a generator (10) for generating terahertz radiation, comprising an integrated semiconductor mode-locked laser (2), a photonic structure (4), a plasmonic structure (6) and an antenna (7), wherein the semiconductor mode-locked laser, the photonic structure, the plasmonic structure and the antenna are integrated on the same photonic integrated circuit (PIC). The invention further relates to an apparatus comprising the said generator of terahertz radiation.

Description

Title: A generator of terahertz radiation
FIELD OF THE INVENTION
The invention relates to a terahertz generator.
The invention further relates to an apparatus comprising the terahertz generator.
BACKGROUND OF THE INVENTION
Electromagnetic radiation in the terahertz range may be an attractive means of generally harmless radiation which may broadly be applied, for example in the field of medical imaging, security, art, for example for paint inspection and so forth. In particular, it is known that the terahertz radiation can penetrate into non-polar materials, such as plastics, wood, clothing and so on. One of the advantages of the terahertz radiation is its high resolution, which may lie in the range of sub-millimeters. Terahertz spectroscopy may be used for identification of specific materials, such as gases and explosives. Terahertz radiation is strongly absorbed by metals and polar materials, such as water. In the field of medical technology terahertz radiation may be used for skin cancer detection and localization during operation. Also in the field of dental care the terahertz radiation may be used, for example for carried detection and screening. Next, it is found that the terahertz radiation has high spectral molecular sensitivity. Accordingly, it may be used for biological sensing, including endoscopic applications. More in particular, it is considered that the terahertz radiation may complement MRI and ultrasound to analyze tissues, for example, tumor during a surgical procedure. For example, resection planes may be checked using the terahertz radiation for investigating whether the tumor resection was successful. Still more in particular, the terahertz radiation may be applied in the fields of quality control, materials science, archaeology, agriculture, moisture level sensing and soil analysis, biochemistry, biochip analysis, chemical detection, leakage inspection, astronomy, environmental monitoring and earth science, oil and gas, methanol detection, to name a few.
Recently, for generation of the electromagnetic radiation in the terahertz range cryogenic conditions were required. However, nowadays the technology has moved to the room temperature terahertz generators.
An embodiment of a terahertz generator is known from WO 2011036250. In the known device a radiation source, a detector, and/or a modulator are provided for optically generating a signal and modulating and/or detecting in the terahertz (THz) frequency range. The electro-optic component comprises a waveguide arrangement, based on silicon and/or germanium. In the known device the waveguide arrangement, which is based on silicon and/or germanium has a silicon and/or germanium material with a surface which is chemically modified by a halogen enrichment and is electro-optically activated with the silicon and/or germanium material.
A further embodiment of a terahertz generator is known to be adapted to cooperate with two laser beams that are arranged to hit a photo- detector. The wavelengths of the laser beams are detuned in frequency with respect to each other and thus force the carriers in the detector to follow the beat-note between the two beams resulting in a THz signal. The detector is connected to a THz antenna that is arranged to steer the beam to the desired location. This method relies strongly on the carrier dynamics of the detector and multiple stabilized lasers. In addition it requires expensive photo- detectors. It is a disadvantage of this embodiment of the THz generator that it, being a free-space set-up, is largely subjected to strong environmental influences. Such influences may result in undesirable fluctuations in the performance of the THz generator. SUMMARY OF THE INVENTION
It is an object of the invention to provide an alternative terahertz generator, which is robust and reliable. It is a further object of the invention to provide an alternative terahertz generator, which is relatively cheap and has stable operational characteristics.
To this end the terahertz generator according to the invention comprises an integrated semiconductor mode-locked laser, a photonic structure, a plasmonic structure and an antenna, wherein the semiconductor mode-locked laser, the photonic structure, the plasmonic structure and the antenna are integrated on the same photonic integrated circuit (PIC).
It is found to be advantageous to integrate the named components on the same chip of allowing due miniaturization of the device as well as for enabling stable and robust operational characteristics. It is further found that a femto- second laser is particularly suitable to cooperate with a plasmonic structure for generating the terahertz radiation. The mode-locked laser is preferably adapted to operate with a mode-spacing set to a value in the range between 0.01 - 100 THz, preferably in the range of 0.5 - 10 THz. It is found that a mode-locked laser is producing a suitable beat-note, corresponding to the mode-spacing of the laser. This beat-note is used in the invention for generation of the terahertz electromagnetic radiation.
The mode-locked laser may be set to any value between 100GHz and a few THz, depending on the laser characteristics. Those skilled in the art will readily appreciate how to properly select the locked-mode. The photonic structure may comprise a waveguide or a coupler or any other suitable means for guiding the light emanating from the laser.
Contrary to the prior art, utilizing a III-V material-based device for THz generation, in accordance with an aspect of the invention, the laser light may be guided in a ridge-waveguide to a plasmonic structure. Accordingly, the light interacting with the plasmonic structure will excite the electrons of the structure at the beat- note (corresponding to the mode-locking frequency, desirably in the terahertz range). Due to the free electron gas in metals, this process is very efficient and robust. The terahertz emission is then guided to a suitable THz antenna, via a photonic structure.
Preferably, the plasmonic structure comprises a resonant metallic plasmonic wave guiding structure. In accordance with the further aspect of the invention the plasmonic structure is adapted to generate surface plasmons upon interaction with a laser beam generated by the said laser. It is found that a certain structure is suitable for this purpose.
In accordance to a further aspect of the invention the terahertz generator may further comprise a detector for receiving radiation emitted by an object conceived to be irradiated with the THz radiation. As is explained with reference to the foregoing such object may be selected from various fields, including living matter.
An apparatus according to the invention comprises the terahertz generator as is set forth in the foregoing. In a preferred embodiment the apparatus further comprises a processor and a display.
These and other aspects of the invention will be discussed in more details with reference to figures wherein like reference signs refer to like elements. It will be appreciated that the figures are presented for illustrative purposes only and may not be used for limiting the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS
Figure 1 presents in a schematic view an embodiment of the terahertz generator according to an aspect of the invention.
Figure 2a presents in a schematic way a top view of an embodiment of the terahertz generator according to a further aspect of the invention. Figure 2b presents a 3D view of an embodiment shown in Figure 2a.
DETAILED DESCRIPTION OF THE DRAWINGS Figure 1 presents in a schematic view an embodiment of the terahertz generator according to an aspect of the invention. The terahertz generator 10 comprises an integrated semiconductor mode-locked laser 2, a photonic structure 4, a plasmonic structure 6 and an antenna 7, wherein the semiconductor mode-locked laser, the photonic structure, the plasmonic structure and the antenna are integrated on the same photonic integrated circuit (PIC) (shown in Figure 2b).
The antenna is used for irradiation an object P, for example a person, a patient, or an item conceived to be investigated with the THz radiation thus generated in the plasmonic structure 6.
The integrated laser 2 may refer to a femto-second laser, which is found to be particularly suitable to cooperate with a plasmonic structure adapted to generate a surface plasmon. Preferably, for interacting with the plasmonic structure 6 a ridge-waveguide structure is used. The photonic structure 4 may comprise a suitable waveguide or a coupler.
The laser signal interacting with the plasmonic structure 6 will excite the electrons of the structure at the beat- note (corresponding to the mode-locking frequency). Due to the free electron gas, this process is expected to be efficient and robust. The emitted terahertz signal is guided into a suitable antenna 7. In accordance with a further aspect of the invention the plasmonic structure and the antenna may comprise micro or nanostructures. The radiation, emitted by the object P in response to the received terahertz radiation may be detected by a suitable detector 8.
In accordance to a further aspect of the invention the terahertz generator 10 may further comprise an embedded detector 9 for receiving radiation emitted by an object conceived to be irradiated with the THz radiation. In this case the external detector 8 is superfluous.
Figure 2a presents in a schematic way a top view of an embodiment of the terahertz generator according to a further aspect of the invention. The stuctures are micro- or nano- dimensioned. The device is chip-based, meaning that the laser source, the photonic guiding structure, the plasmonic structure, and the antenna are integrated and connected on one piece of chip.
Figure 2b presents in a schematic way a working device 30. The device comprises the said chip which can comprise multiple stacks. It three- dimensionally comprises also the other needed components, i.e., the detector, modulator, amplifier, controlling electronics, interrogation electronics, etc. All the components are integrated together on a small scale. They communicate with each other via electronic or photonic connections, vertically or
horizontally, e.g., using waveguides, electronic circuit. Wireless communication is also applicable, in a short range or long range.
While specific embodiments have been described above, it will be appreciated that the invention may be practiced otherwise than as described. Moreover, specific items discussed with reference to any of the Figures may freely be inter-changed supplementing each outer in any particular way. The descriptions above are intended to be illustrative, not limiting. Thus, it will be apparent to one skilled in the art that modifications may be made to the invention as described in the foregoing without departing from the scope of the claims set out below.

Claims

Claims
1. A generator for generating terahertz radiation, comprising an integrated semiconductor mode-locked laser, a photonic structure, a plasmonic structure and an antenna, wherein the semiconductor mode-locked laser, the photonic structure, the plasmonic structure and the antenna are integrated on the same photonic integrated circuit (PIC).
2. The generator according to claim 1, wherein the plasmonic structure comprises a wave guiding structure.
3. The generator, according to claim 1 or 2, wherein the mode-locked laser is adapted to operate with a mode-spacing set to a value in the range between 0.01 - 100 THz, preferably in the range of 0.5 - 10 THz.
4. The generator according to any one of the preceding claims, further comprising a detector for receiving radiation emitted by an object conceived to be irradiated with the THz radiation.
5. The generator according to any one of the preceding claims, wherein the photonic structure comprises a waveguide or a coupler.
6. The terahertz generator according to any one of the preceding claims, wherein the plasmonic structure is adapted to generate
electromagnetic radiation upon interaction with a laser beam generated by the said laser.
7. The terahertz generator according to any one of the preceding claims, wherein the plasmonic structure and the antenna comprise micro- or nanostructures .
8. An apparatus comprising the terahertz generator according to any one of the preceding claims.
9. The apparatus according to claim 8, further comprising a processor and a display.
PCT/NL2011/050245 2010-04-13 2011-04-12 A generator of terahertz radiation WO2011129690A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP10159733 2010-04-13
EP10159733.4 2010-04-13

Publications (2)

Publication Number Publication Date
WO2011129690A2 true WO2011129690A2 (en) 2011-10-20
WO2011129690A3 WO2011129690A3 (en) 2011-12-08

Family

ID=44625970

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/NL2011/050245 WO2011129690A2 (en) 2010-04-13 2011-04-12 A generator of terahertz radiation

Country Status (1)

Country Link
WO (1) WO2011129690A2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013112608A1 (en) * 2012-01-23 2013-08-01 The Regents Of The University Of Michigan Photoconductive device with plasmonic electrodes
EP3302224A4 (en) * 2015-05-27 2019-02-27 The Regents of The University of California Terahertz endoscopy through laser-driven terahertz sources and detectors
CN109856641A (en) * 2019-01-17 2019-06-07 北京农业信息技术研究中心 The terahertz detection method of poultry vivo biodistribution chip
CN110118746A (en) * 2019-06-20 2019-08-13 云南电网有限责任公司电力科学研究院 Insulating oil moisture content detection method
US11249017B2 (en) 2017-04-20 2022-02-15 The Regents Of The University Of California Systems and methods for high frequency nanoscopy
US11906424B2 (en) 2019-10-01 2024-02-20 The Regents Of The University Of California Method for identifying chemical and structural variations through terahertz time-domain spectroscopy

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011036250A1 (en) 2009-09-25 2011-03-31 Rwth Aachen Electro-optic component, use and production of said component

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005001505A1 (en) * 2003-06-25 2005-01-06 Canon Kabushiki Kaisha High frequency electrical signal control device and sensing system

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011036250A1 (en) 2009-09-25 2011-03-31 Rwth Aachen Electro-optic component, use and production of said component

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013112608A1 (en) * 2012-01-23 2013-08-01 The Regents Of The University Of Michigan Photoconductive device with plasmonic electrodes
EP2807675A4 (en) * 2012-01-23 2015-11-11 Univ Michigan Photoconductive device with plasmonic electrodes
US9804026B2 (en) 2012-01-23 2017-10-31 The Regents Of The University Of Michigan Photoconductive emitter device with plasmonic electrodes
US11112305B2 (en) 2012-01-23 2021-09-07 The Regents Of The University Of California Photoconductive detector device with plasmonic electrodes
US11231318B2 (en) 2012-01-23 2022-01-25 The Regents Of The University Of California Photoconductive detector device with plasmonic electrodes
EP3302224A4 (en) * 2015-05-27 2019-02-27 The Regents of The University of California Terahertz endoscopy through laser-driven terahertz sources and detectors
US10863895B2 (en) 2015-05-27 2020-12-15 The Regents Of The University Of California Terahertz endoscopy through laser-driven terahertz sources and detectors
US11249017B2 (en) 2017-04-20 2022-02-15 The Regents Of The University Of California Systems and methods for high frequency nanoscopy
CN109856641A (en) * 2019-01-17 2019-06-07 北京农业信息技术研究中心 The terahertz detection method of poultry vivo biodistribution chip
CN110118746A (en) * 2019-06-20 2019-08-13 云南电网有限责任公司电力科学研究院 Insulating oil moisture content detection method
CN110118746B (en) * 2019-06-20 2022-01-25 云南电网有限责任公司电力科学研究院 Method for detecting moisture content of insulating oil
US11906424B2 (en) 2019-10-01 2024-02-20 The Regents Of The University Of California Method for identifying chemical and structural variations through terahertz time-domain spectroscopy

Also Published As

Publication number Publication date
WO2011129690A3 (en) 2011-12-08

Similar Documents

Publication Publication Date Title
Chien et al. Single-molecule optical absorption imaging by nanomechanical photothermal sensing
WO2011129690A2 (en) A generator of terahertz radiation
CN110325869B (en) Diamond magnetic sensor
US9714902B2 (en) System and method for making concentration measurements within a sample material using orbital angular momentum
CN105829844B (en) For being imaged the Optical Maser System with material analysis
CN110168383A (en) Use the IR Characterization for the sample that peak force touches
JP5329449B2 (en) How to perform microscopic imaging
CN104833650B (en) The pulse terahertz time-domain spectroscopy system and detection method of monochromatic light lead antenna
JP2001503748A (en) Methods for improving selectivity and detection of photoactivity of molecular drugs
JP2005017644A (en) High frequency electric signal controller and sensing system
US9429473B2 (en) Terahertz spectrometer and method for reducing photomixing interference pattern
US9086374B1 (en) Terahertz spectrometer with phase modulation and method
Urban et al. Nanoparticle-assisted STED nanoscopy with gold nanospheres
KR20180135050A (en) Particle Characterization in Open Optical Cavity Cavity
Lu et al. Terahertz microchip for illicit drug detection
JP4831466B2 (en) Method and apparatus for generating and detecting terahertz waves
US11885904B2 (en) Sensing pulses of radio frequency fields
KR101845814B1 (en) APPARATUS FOR GENERATING THz WAVE USING ACTIVE MODE LOCKING LASER
JP2007078666A (en) Method and device for detecting electromagnetic wave shape
JP2008089546A (en) Electromagnetic wave measuring device
Liu et al. Second harmonic generation correlation spectroscopy for single molecule experiments
van Raaij et al. Femtosecond photoacoustics: integrated two-photon fluorescence and photoacoustic microscopy
JP5413899B2 (en) Electromagnetic wave shape detection method and apparatus
US7288927B2 (en) Remote substance identification and location method and system
JP5298264B2 (en) Heterodyne beat probe scanning probe tunneling microscope and method for measuring minute signal superimposed on tunneling current by this

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 11716081

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase in:

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 11716081

Country of ref document: EP

Kind code of ref document: A2