JP6169114B2 - リソグラフィ装置 - Google Patents

リソグラフィ装置 Download PDF

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Publication number
JP6169114B2
JP6169114B2 JP2014561357A JP2014561357A JP6169114B2 JP 6169114 B2 JP6169114 B2 JP 6169114B2 JP 2014561357 A JP2014561357 A JP 2014561357A JP 2014561357 A JP2014561357 A JP 2014561357A JP 6169114 B2 JP6169114 B2 JP 6169114B2
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JP
Japan
Prior art keywords
reticle
gas
radiation beam
blade
space
Prior art date
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Active
Application number
JP2014561357A
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English (en)
Japanese (ja)
Other versions
JP2015511769A (ja
JP2015511769A5 (enExample
Inventor
バル，クルサット
ルティフイス，ベルナルドス，アントニウス，ヨハネス
オックウェル，ダビット，クリストファー
プッテン，アーノルド，ヤン ヴァン
プッテン，アーノルド，ヤン ヴァン
ニーンフイス，ハン−クワン
リーンダース，マイケル，ベルナルドゥス，セオドルス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML Netherlands BV
Original Assignee
ASML Netherlands BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASML Netherlands BV filed Critical ASML Netherlands BV
Publication of JP2015511769A publication Critical patent/JP2015511769A/ja
Publication of JP2015511769A5 publication Critical patent/JP2015511769A5/ja
Application granted granted Critical
Publication of JP6169114B2 publication Critical patent/JP6169114B2/ja
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Anticipated expiration legal-status Critical

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70066—Size and form of the illuminated area in the mask plane, e.g. reticle masking blades or blinds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70933—Purge, e.g. exchanging fluid or gas to remove pollutants

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2014561357A 2012-03-14 2013-02-28 リソグラフィ装置 Active JP6169114B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261610653P 2012-03-14 2012-03-14
US61/610,653 2012-03-14
PCT/EP2013/054095 WO2013135494A2 (en) 2012-03-14 2013-02-28 Lithographic apparatus

Publications (3)

Publication Number Publication Date
JP2015511769A JP2015511769A (ja) 2015-04-20
JP2015511769A5 JP2015511769A5 (enExample) 2016-03-31
JP6169114B2 true JP6169114B2 (ja) 2017-07-26

Family

ID=47757621

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014561357A Active JP6169114B2 (ja) 2012-03-14 2013-02-28 リソグラフィ装置

Country Status (7)

Country Link
US (1) US9513566B2 (enExample)
JP (1) JP6169114B2 (enExample)
KR (1) KR102141138B1 (enExample)
CN (1) CN104335121B (enExample)
NL (1) NL2010376A (enExample)
TW (1) TWI590003B (enExample)
WO (1) WO2013135494A2 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102098558B1 (ko) * 2012-10-23 2020-04-08 삼성전자 주식회사 리소그래피 장치 및 방법과 스테이지 시스템
JP6418740B2 (ja) * 2014-01-16 2018-11-07 キヤノン株式会社 保持装置、リソグラフィ装置及び物品の製造方法
TWI663481B (zh) * 2014-06-03 2019-06-21 荷蘭商Ａｓｍｌ荷蘭公司 用於補償一曝光誤差的方法、元件製造方法、基板台、微影裝置、控制系統、用於量測反射率的方法、及用於量測一極紫外線輻射劑量的方法
JP2018500596A (ja) * 2014-12-31 2018-01-11 エーエスエムエル ホールディング エヌ．ブイ． パターニングデバイス環境を有するリソグラフィ装置
KR102502727B1 (ko) 2015-11-09 2023-02-23 삼성전자주식회사 레티클 및 그를 포함하는 노광 장치
CN107450271B (zh) * 2016-05-31 2019-10-25 上海微电子装备（集团）股份有限公司 光刻机刀口组、大视场光刻机和曝光方法
US10168626B2 (en) 2016-06-17 2019-01-01 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and a method of forming a particle shield
US10788764B2 (en) 2016-06-17 2020-09-29 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and a method of forming a particle shield
US11397385B2 (en) 2016-06-17 2022-07-26 Taiwan Semiconductor Manufacturing Company, Ltd Apparatus and a method of forming a particle shield
CN107219729B (zh) * 2017-07-17 2018-10-26 深圳市华星光电技术有限公司 曝光机及遮光叶片
KR102813711B1 (ko) * 2019-05-02 2025-05-29 삼성전자주식회사 반도체 소자의 제조 장치 및 그를 이용한 반도체 소자의 제조 방법
EP3919978A1 (en) * 2020-06-05 2021-12-08 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus and a method of forming a particle shield
CN112925174B (zh) * 2021-01-28 2022-03-22 长鑫存储技术有限公司 半导体光刻设备
EP4239410A1 (en) * 2022-03-01 2023-09-06 ASML Netherlands B.V. Reticle stage
WO2023165837A1 (en) * 2022-03-01 2023-09-07 Asml Netherlands B.V. Reticle stage

Family Cites Families (25)

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US6078381A (en) * 1993-02-01 2000-06-20 Nikon Corporation Exposure method and apparatus
EP1030351A1 (en) * 1997-11-12 2000-08-23 Nikon Corporation Exposure apparatus, apparatus for manufacturing devices, and method of manufacturing exposure apparatuses
JPWO2002041375A1 (ja) * 2000-11-15 2004-03-25 株式会社ニコン 搬送方法及びその装置、露光方法及びその装置、並びにデバイスの製造方法
JP2003234281A (ja) 2002-02-08 2003-08-22 Canon Inc 露光装置、デバイス製造方法
US6934003B2 (en) 2002-01-07 2005-08-23 Canon Kabushiki Kaisha Exposure apparatus and device manufacturing method
DE60335595D1 (de) * 2002-11-12 2011-02-17 Asml Netherlands Bv Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung
CN102645851B (zh) * 2003-03-31 2015-11-25 Asml荷兰有限公司 照明源和掩模优化
TWI295414B (en) 2003-05-13 2008-04-01 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
EP1486827B1 (en) 2003-06-11 2011-11-02 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2005086133A (ja) * 2003-09-11 2005-03-31 Semiconductor Leading Edge Technologies Inc 露光装置および露光方法
US8094288B2 (en) * 2004-05-11 2012-01-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20050275835A1 (en) * 2004-06-15 2005-12-15 Nikon Corporation Method and apparatus for protecting an EUV reticle from particles
US7126664B2 (en) * 2004-07-12 2006-10-24 Asml Netherlands B.V. Lithographic apparatus and a device manufacturing method
US7030959B2 (en) * 2004-07-23 2006-04-18 Nikon Corporation Extreme ultraviolet reticle protection using gas flow thermophoresis
US7554648B2 (en) * 2005-11-04 2009-06-30 Nikon Corporation Blind devices and methods for providing continuous thermophoretic protection of lithographic reticle
US7745079B2 (en) * 2006-03-09 2010-06-29 Nikon Corporation Apparatus for and method of thermophoretic protection of an object in a high-vacuum environment
JP2007258472A (ja) * 2006-03-23 2007-10-04 Nikon Corp 露光装置
US20070285632A1 (en) * 2006-06-08 2007-12-13 Nikon Corporation EUVL reticle stage and reticle protection system and method
JP2008135586A (ja) * 2006-11-29 2008-06-12 Canon Inc 露光装置
JP2009129935A (ja) * 2007-11-20 2009-06-11 Canon Inc 露光装置
US7719661B2 (en) * 2007-11-27 2010-05-18 Nikon Corporation Illumination optical apparatus, exposure apparatus, and method for producing device
US8964166B2 (en) * 2007-12-17 2015-02-24 Nikon Corporation Stage device, exposure apparatus and method of producing device
CN101221373B (zh) * 2008-01-25 2010-06-02 上海微电子装备有限公司 一种照明均匀性校正装置
JP5186347B2 (ja) * 2008-12-04 2013-04-17 ギガフォトン株式会社 差動排気システム
JP2015086133A (ja) 2015-01-28 2015-05-07 坂東機工株式会社 ガラス板のスクライブ装置

Also Published As

Publication number Publication date
KR102141138B1 (ko) 2020-08-05
TW201344374A (zh) 2013-11-01
NL2010376A (en) 2013-09-18
US9513566B2 (en) 2016-12-06
CN104335121A (zh) 2015-02-04
TWI590003B (zh) 2017-07-01
JP2015511769A (ja) 2015-04-20
US20150049323A1 (en) 2015-02-19
WO2013135494A3 (en) 2014-01-16
KR20150008856A (ko) 2015-01-23
WO2013135494A2 (en) 2013-09-19
CN104335121B (zh) 2017-06-09

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