JP2015511769A5 - - Google Patents

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Publication number
JP2015511769A5
JP2015511769A5 JP2014561357A JP2014561357A JP2015511769A5 JP 2015511769 A5 JP2015511769 A5 JP 2015511769A5 JP 2014561357 A JP2014561357 A JP 2014561357A JP 2014561357 A JP2014561357 A JP 2014561357A JP 2015511769 A5 JP2015511769 A5 JP 2015511769A5
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JP
Japan
Prior art keywords
reticle
gas
blade pair
blade
vacuum environment
Prior art date
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Application number
JP2014561357A
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English (en)
Japanese (ja)
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JP6169114B2 (ja
JP2015511769A (ja
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Publication date
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Priority claimed from PCT/EP2013/054095 external-priority patent/WO2013135494A2/en
Publication of JP2015511769A publication Critical patent/JP2015511769A/ja
Publication of JP2015511769A5 publication Critical patent/JP2015511769A5/ja
Application granted granted Critical
Publication of JP6169114B2 publication Critical patent/JP6169114B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2014561357A 2012-03-14 2013-02-28 リソグラフィ装置 Active JP6169114B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261610653P 2012-03-14 2012-03-14
US61/610,653 2012-03-14
PCT/EP2013/054095 WO2013135494A2 (en) 2012-03-14 2013-02-28 Lithographic apparatus

Publications (3)

Publication Number Publication Date
JP2015511769A JP2015511769A (ja) 2015-04-20
JP2015511769A5 true JP2015511769A5 (enExample) 2016-03-31
JP6169114B2 JP6169114B2 (ja) 2017-07-26

Family

ID=47757621

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014561357A Active JP6169114B2 (ja) 2012-03-14 2013-02-28 リソグラフィ装置

Country Status (7)

Country Link
US (1) US9513566B2 (enExample)
JP (1) JP6169114B2 (enExample)
KR (1) KR102141138B1 (enExample)
CN (1) CN104335121B (enExample)
NL (1) NL2010376A (enExample)
TW (1) TWI590003B (enExample)
WO (1) WO2013135494A2 (enExample)

Families Citing this family (15)

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Publication number Priority date Publication date Assignee Title
KR102098558B1 (ko) * 2012-10-23 2020-04-08 삼성전자 주식회사 리소그래피 장치 및 방법과 스테이지 시스템
JP6418740B2 (ja) * 2014-01-16 2018-11-07 キヤノン株式会社 保持装置、リソグラフィ装置及び物品の製造方法
TWI663481B (zh) * 2014-06-03 2019-06-21 荷蘭商Ａｓｍｌ荷蘭公司 用於補償一曝光誤差的方法、元件製造方法、基板台、微影裝置、控制系統、用於量測反射率的方法、及用於量測一極紫外線輻射劑量的方法
JP2018500596A (ja) * 2014-12-31 2018-01-11 エーエスエムエル ホールディング エヌ．ブイ． パターニングデバイス環境を有するリソグラフィ装置
KR102502727B1 (ko) 2015-11-09 2023-02-23 삼성전자주식회사 레티클 및 그를 포함하는 노광 장치
CN107450271B (zh) * 2016-05-31 2019-10-25 上海微电子装备（集团）股份有限公司 光刻机刀口组、大视场光刻机和曝光方法
US10168626B2 (en) 2016-06-17 2019-01-01 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and a method of forming a particle shield
US10788764B2 (en) 2016-06-17 2020-09-29 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and a method of forming a particle shield
US11397385B2 (en) 2016-06-17 2022-07-26 Taiwan Semiconductor Manufacturing Company, Ltd Apparatus and a method of forming a particle shield
CN107219729B (zh) * 2017-07-17 2018-10-26 深圳市华星光电技术有限公司 曝光机及遮光叶片
KR102813711B1 (ko) * 2019-05-02 2025-05-29 삼성전자주식회사 반도체 소자의 제조 장치 및 그를 이용한 반도체 소자의 제조 방법
EP3919978A1 (en) * 2020-06-05 2021-12-08 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus and a method of forming a particle shield
CN112925174B (zh) * 2021-01-28 2022-03-22 长鑫存储技术有限公司 半导体光刻设备
EP4239410A1 (en) * 2022-03-01 2023-09-06 ASML Netherlands B.V. Reticle stage
WO2023165837A1 (en) * 2022-03-01 2023-09-07 Asml Netherlands B.V. Reticle stage

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US6078381A (en) * 1993-02-01 2000-06-20 Nikon Corporation Exposure method and apparatus
EP1030351A1 (en) * 1997-11-12 2000-08-23 Nikon Corporation Exposure apparatus, apparatus for manufacturing devices, and method of manufacturing exposure apparatuses
JPWO2002041375A1 (ja) * 2000-11-15 2004-03-25 株式会社ニコン 搬送方法及びその装置、露光方法及びその装置、並びにデバイスの製造方法
JP2003234281A (ja) 2002-02-08 2003-08-22 Canon Inc 露光装置、デバイス製造方法
US6934003B2 (en) 2002-01-07 2005-08-23 Canon Kabushiki Kaisha Exposure apparatus and device manufacturing method
DE60335595D1 (de) * 2002-11-12 2011-02-17 Asml Netherlands Bv Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung
CN102645851B (zh) * 2003-03-31 2015-11-25 Asml荷兰有限公司 照明源和掩模优化
TWI295414B (en) 2003-05-13 2008-04-01 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
EP1486827B1 (en) 2003-06-11 2011-11-02 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2005086133A (ja) * 2003-09-11 2005-03-31 Semiconductor Leading Edge Technologies Inc 露光装置および露光方法
US8094288B2 (en) * 2004-05-11 2012-01-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20050275835A1 (en) * 2004-06-15 2005-12-15 Nikon Corporation Method and apparatus for protecting an EUV reticle from particles
US7126664B2 (en) * 2004-07-12 2006-10-24 Asml Netherlands B.V. Lithographic apparatus and a device manufacturing method
US7030959B2 (en) * 2004-07-23 2006-04-18 Nikon Corporation Extreme ultraviolet reticle protection using gas flow thermophoresis
US7554648B2 (en) * 2005-11-04 2009-06-30 Nikon Corporation Blind devices and methods for providing continuous thermophoretic protection of lithographic reticle
US7745079B2 (en) * 2006-03-09 2010-06-29 Nikon Corporation Apparatus for and method of thermophoretic protection of an object in a high-vacuum environment
JP2007258472A (ja) * 2006-03-23 2007-10-04 Nikon Corp 露光装置
US20070285632A1 (en) * 2006-06-08 2007-12-13 Nikon Corporation EUVL reticle stage and reticle protection system and method
JP2008135586A (ja) * 2006-11-29 2008-06-12 Canon Inc 露光装置
JP2009129935A (ja) * 2007-11-20 2009-06-11 Canon Inc 露光装置
US7719661B2 (en) * 2007-11-27 2010-05-18 Nikon Corporation Illumination optical apparatus, exposure apparatus, and method for producing device
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CN101221373B (zh) * 2008-01-25 2010-06-02 上海微电子装备有限公司 一种照明均匀性校正装置
JP5186347B2 (ja) * 2008-12-04 2013-04-17 ギガフォトン株式会社 差動排気システム
JP2015086133A (ja) 2015-01-28 2015-05-07 坂東機工株式会社 ガラス板のスクライブ装置

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