JP6160579B2 - シリコンウェーハの仕上げ研磨方法 - Google Patents

シリコンウェーハの仕上げ研磨方法 Download PDF

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Publication number
JP6160579B2
JP6160579B2 JP2014159737A JP2014159737A JP6160579B2 JP 6160579 B2 JP6160579 B2 JP 6160579B2 JP 2014159737 A JP2014159737 A JP 2014159737A JP 2014159737 A JP2014159737 A JP 2014159737A JP 6160579 B2 JP6160579 B2 JP 6160579B2
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JP
Japan
Prior art keywords
polishing
abrasive
polishing cloth
wafer
cloth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2014159737A
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English (en)
Japanese (ja)
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JP2016039179A (ja
Inventor
三千登 佐藤
三千登 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2014159737A priority Critical patent/JP6160579B2/ja
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Priority to US15/328,699 priority patent/US10043673B2/en
Priority to CN201580039703.8A priority patent/CN106663621B/zh
Priority to PCT/JP2015/003522 priority patent/WO2016021117A1/ja
Priority to DE112015003214.2T priority patent/DE112015003214B4/de
Priority to SG11201700608XA priority patent/SG11201700608XA/en
Priority to KR1020177003074A priority patent/KR102159232B1/ko
Priority to TW104122995A priority patent/TWI602643B/zh
Publication of JP2016039179A publication Critical patent/JP2016039179A/ja
Application granted granted Critical
Publication of JP6160579B2 publication Critical patent/JP6160579B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2014159737A 2014-08-05 2014-08-05 シリコンウェーハの仕上げ研磨方法 Active JP6160579B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2014159737A JP6160579B2 (ja) 2014-08-05 2014-08-05 シリコンウェーハの仕上げ研磨方法
CN201580039703.8A CN106663621B (zh) 2014-08-05 2015-07-13 硅晶圆的精抛光方法以及使用该抛光方法抛光的硅晶圆
PCT/JP2015/003522 WO2016021117A1 (ja) 2014-08-05 2015-07-13 シリコンウェーハの仕上げ研磨方法及びシリコンウェーハ
DE112015003214.2T DE112015003214B4 (de) 2014-08-05 2015-07-13 Endpolierverfahren eines Siliziumwafers
US15/328,699 US10043673B2 (en) 2014-08-05 2015-07-13 Final polishing method of silicon wafer and silicon wafer
SG11201700608XA SG11201700608XA (en) 2014-08-05 2015-07-13 Final polishing method of silicon wafer and silicon wafer
KR1020177003074A KR102159232B1 (ko) 2014-08-05 2015-07-13 실리콘 웨이퍼의 마무리 연마방법
TW104122995A TWI602643B (zh) 2014-08-05 2015-07-15 Polished silicon wafer polishing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014159737A JP6160579B2 (ja) 2014-08-05 2014-08-05 シリコンウェーハの仕上げ研磨方法

Publications (2)

Publication Number Publication Date
JP2016039179A JP2016039179A (ja) 2016-03-22
JP6160579B2 true JP6160579B2 (ja) 2017-07-12

Family

ID=55263416

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014159737A Active JP6160579B2 (ja) 2014-08-05 2014-08-05 シリコンウェーハの仕上げ研磨方法

Country Status (8)

Country Link
US (1) US10043673B2 (de)
JP (1) JP6160579B2 (de)
KR (1) KR102159232B1 (de)
CN (1) CN106663621B (de)
DE (1) DE112015003214B4 (de)
SG (1) SG11201700608XA (de)
TW (1) TWI602643B (de)
WO (1) WO2016021117A1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6389629B2 (ja) * 2014-03-31 2018-09-12 ニッタ・ハース株式会社 研磨用組成物
JP6792413B2 (ja) * 2016-10-31 2020-11-25 花王株式会社 シリコンウェーハ用研磨液組成物
US20200010727A1 (en) * 2017-02-20 2020-01-09 Fujimi Incorporated Intermediate polishing composition for silicon substrate and polishing composition set for silicon substrate
JP6690606B2 (ja) * 2017-07-14 2020-04-28 信越半導体株式会社 研磨方法
CN111095491B (zh) * 2017-08-31 2023-05-30 胜高股份有限公司 硅晶片的双面抛光方法
KR102332264B1 (ko) * 2017-10-17 2021-11-26 가부시키가이샤 사무코 실리콘 웨이퍼의 연마 방법
CN109648451B (zh) 2018-12-29 2020-12-01 徐州鑫晶半导体科技有限公司 硅晶圆的最终抛光方法和最终抛光装置
KR20240125581A (ko) * 2021-12-21 2024-08-19 신에쯔 한도타이 가부시키가이샤 양면연마장치, 반도체 실리콘 웨이퍼의 양면연마방법, 양면연마 실리콘 웨이퍼 및 그의 제조방법
JP7435634B2 (ja) * 2021-12-21 2024-02-21 信越半導体株式会社 両面研磨装置、半導体シリコンウェーハの両面研磨方法及び両面研磨シリコンウェーハの製造方法
CN115851138B (zh) * 2022-12-23 2024-06-28 博力思(天津)电子科技有限公司 一种可减少硅片表面颗粒沾污的硅精抛液
CN116038505B (zh) * 2023-04-03 2023-06-16 国营川西机器厂 一种基于等级划分的风扇转子叶片抛光方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020016139A1 (en) * 2000-07-25 2002-02-07 Kazuto Hirokawa Polishing tool and manufacturing method therefor
JP5335183B2 (ja) 2006-08-24 2013-11-06 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法
JP4889507B2 (ja) * 2007-01-11 2012-03-07 富士紡ホールディングス株式会社 保持パッド
JP4696086B2 (ja) 2007-02-20 2011-06-08 信越半導体株式会社 シリコン単結晶ウエーハの仕上げ研磨方法及びシリコン単結晶ウエーハ
JP4614981B2 (ja) * 2007-03-22 2011-01-19 Ｊｓｒ株式会社 化学機械研磨用水系分散体および半導体装置の化学機械研磨方法
SG192058A1 (en) 2011-01-26 2013-08-30 Fujimi Inc Polishing composition, polishing method using same, and substrate production method
CN102516873B (zh) * 2011-10-24 2014-06-04 清华大学 一种硅晶片抛光组合物及其制备方法
TWI650408B (zh) 2012-01-16 2019-02-11 日商福吉米股份有限公司 研磨用組成物，其製造方法，矽基板之製造方法及矽基板
TWI582184B (zh) 2012-01-16 2017-05-11 福吉米股份有限公司 研磨用組成物、其製造方法、稀釋用原液、矽基板之製造方法、及矽基板
JP6105916B2 (ja) * 2012-12-17 2017-03-29 株式会社フジミインコーポレーテッド セルロース誘導体組成物、当該セルロース誘導体組成物を用いた研磨用組成物、当該研磨用組成物の製造方法、および当該研磨用組成物を用いた基板の製造方法
JP6087143B2 (ja) 2012-12-28 2017-03-01 花王株式会社 シリコンウェーハ用研磨液組成物

Also Published As

Publication number Publication date
TWI602643B (zh) 2017-10-21
DE112015003214T5 (de) 2017-04-27
US20170213742A1 (en) 2017-07-27
CN106663621A (zh) 2017-05-10
SG11201700608XA (en) 2017-02-27
WO2016021117A1 (ja) 2016-02-11
KR20170041201A (ko) 2017-04-14
US10043673B2 (en) 2018-08-07
TW201617170A (zh) 2016-05-16
KR102159232B1 (ko) 2020-09-23
JP2016039179A (ja) 2016-03-22
CN106663621B (zh) 2019-06-11
DE112015003214B4 (de) 2023-02-16

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