JP6153322B2 - 発光素子 - Google Patents

発光素子 Download PDF

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Publication number
JP6153322B2
JP6153322B2 JP2012271868A JP2012271868A JP6153322B2 JP 6153322 B2 JP6153322 B2 JP 6153322B2 JP 2012271868 A JP2012271868 A JP 2012271868A JP 2012271868 A JP2012271868 A JP 2012271868A JP 6153322 B2 JP6153322 B2 JP 6153322B2
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JP
Japan
Prior art keywords
pattern
light
light extraction
light emitting
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2012271868A
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English (en)
Japanese (ja)
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JP2013128112A5 (enExample
JP2013128112A (ja
Inventor
イム・ヒョンス
チョ・クォンテ
パク・スイク
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Innotek Co Ltd
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LG Innotek Co Ltd
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Filing date
Publication date
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Publication of JP2013128112A publication Critical patent/JP2013128112A/ja
Publication of JP2013128112A5 publication Critical patent/JP2013128112A5/ja
Application granted granted Critical
Publication of JP6153322B2 publication Critical patent/JP6153322B2/ja
Expired - Fee Related legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/872—Periodic patterns for optical field-shaping, e.g. photonic bandgap structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means

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  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
JP2012271868A 2011-12-16 2012-12-13 発光素子 Expired - Fee Related JP6153322B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2011-0136834 2011-12-16
KR1020110136834A KR101894025B1 (ko) 2011-12-16 2011-12-16 발광소자

Publications (3)

Publication Number Publication Date
JP2013128112A JP2013128112A (ja) 2013-06-27
JP2013128112A5 JP2013128112A5 (enExample) 2016-02-04
JP6153322B2 true JP6153322B2 (ja) 2017-06-28

Family

ID=47713765

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012271868A Expired - Fee Related JP6153322B2 (ja) 2011-12-16 2012-12-13 発光素子

Country Status (6)

Country Link
US (1) US9153756B2 (enExample)
EP (1) EP2605296B1 (enExample)
JP (1) JP6153322B2 (enExample)
KR (1) KR101894025B1 (enExample)
CN (1) CN103165788B (enExample)
TW (1) TWI587542B (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9466763B2 (en) * 2013-09-03 2016-10-11 Sharp Kabushiki Kaisha Semiconductor light-emitting element
DE102013112740B4 (de) * 2013-11-19 2021-03-18 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierendes Halbleiterbauelement
TWI614914B (zh) 2014-07-11 2018-02-11 晶元光電股份有限公司 發光元件及其製造方法
US10128420B2 (en) * 2016-12-30 2018-11-13 Lite-On Technology Corporation LED package structure and chip-scale light emitting unit
JP2018170333A (ja) * 2017-03-29 2018-11-01 株式会社東芝 半導体装置及びその製造方法
KR102054604B1 (ko) 2017-08-24 2019-12-10 소코 가가쿠 가부시키가이샤 질화물 반도체 자외선 발광 소자의 제조 방법 및 질화물 반도체 자외선 발광 소자
CN111146314B (zh) * 2018-11-06 2021-02-23 中国科学院苏州纳米技术与纳米仿生研究所 提高氮化物半导体紫外发光二极管取光效率的方法及应用
KR102669515B1 (ko) * 2018-12-27 2024-05-28 삼성디스플레이 주식회사 디스플레이 장치
DE102019100624A1 (de) * 2019-01-11 2020-07-16 Osram Opto Semiconductors Gmbh Optoelektronisches halbleiterbauelement mit erster und zweiter dielektrischer schicht und verfahren zur herstellung des optoelektronischen halbleiterbauelements

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5779924A (en) * 1996-03-22 1998-07-14 Hewlett-Packard Company Ordered interface texturing for a light emitting device
JP2002319708A (ja) * 2001-04-23 2002-10-31 Matsushita Electric Works Ltd Ｌｅｄチップおよびｌｅｄ装置
JP4151282B2 (ja) * 2002-03-01 2008-09-17 日亜化学工業株式会社 窒化物系半導体発光素子
JP4590905B2 (ja) * 2003-10-31 2010-12-01 豊田合成株式会社 発光素子および発光装置
TW200419832A (en) * 2004-04-16 2004-10-01 Uni Light Technology Inc Structure for increasing the light-emitting efficiency of a light-emitting device
KR100638819B1 (ko) * 2005-05-19 2006-10-27 삼성전기주식회사 광추출효율이 개선된 수직구조 질화물 반도체 발광소자
JP4778745B2 (ja) * 2005-07-27 2011-09-21 パナソニック株式会社 半導体発光装置及びその製造方法
JP4829190B2 (ja) * 2007-08-22 2011-12-07 株式会社東芝 発光素子
JP2010541295A (ja) * 2007-10-08 2010-12-24 スリーエム イノベイティブ プロパティズ カンパニー 半導体波長コンバータが接合された発光ダイオード
US8552445B2 (en) 2007-12-28 2013-10-08 Nichia Corporation Semiconductor light emitting device and method for manufacturing the same
KR101533296B1 (ko) * 2008-07-08 2015-07-02 삼성전자주식회사 패턴 형성 기판을 구비한 질화물 반도체 발광소자 및 그제조방법
KR101064016B1 (ko) * 2008-11-26 2011-09-08 엘지이노텍 주식회사 발광 소자 및 그 제조방법
KR20100095134A (ko) * 2009-02-20 2010-08-30 엘지이노텍 주식회사 발광소자 및 그 제조방법
WO2011056867A1 (en) * 2009-11-03 2011-05-12 The Regents Of The University Of California High brightness light emitting diode covered by zinc oxide layers on multiple surfaces grown in low temperature aqueous solution
KR100993093B1 (ko) * 2010-02-04 2010-11-08 엘지이노텍 주식회사 발광 소자 및 발광 소자 패키지
KR101047639B1 (ko) * 2010-04-19 2011-07-07 엘지이노텍 주식회사 반도체 발광소자, 발광 소자 패키지 및 반도체 발광 소자 제조방법
CN102280553A (zh) * 2010-06-10 2011-12-14 杨秋忠 覆晶发光二极管晶粒及其晶粒阵列
US8723201B2 (en) * 2010-08-20 2014-05-13 Invenlux Corporation Light-emitting devices with substrate coated with optically denser material
US8343788B2 (en) * 2011-04-19 2013-01-01 Epistar Corporation Light emitting device and manufacturing method thereof
CN102184846A (zh) * 2011-04-22 2011-09-14 东莞市中镓半导体科技有限公司 一种图形化衬底的制备方法

Also Published As

Publication number Publication date
TW201342658A (zh) 2013-10-16
TWI587542B (zh) 2017-06-11
CN103165788A (zh) 2013-06-19
EP2605296B1 (en) 2018-06-13
US9153756B2 (en) 2015-10-06
CN103165788B (zh) 2017-07-18
JP2013128112A (ja) 2013-06-27
KR20130069215A (ko) 2013-06-26
US20130153947A1 (en) 2013-06-20
KR101894025B1 (ko) 2018-09-03
EP2605296A3 (en) 2015-02-11
EP2605296A2 (en) 2013-06-19

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