JP2013128112A5 - - Google Patents
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- Publication number
- JP2013128112A5 JP2013128112A5 JP2012271868A JP2012271868A JP2013128112A5 JP 2013128112 A5 JP2013128112 A5 JP 2013128112A5 JP 2012271868 A JP2012271868 A JP 2012271868A JP 2012271868 A JP2012271868 A JP 2012271868A JP 2013128112 A5 JP2013128112 A5 JP 2013128112A5
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- light extraction
- emitting device
- light emitting
- extraction pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000605 extraction Methods 0.000 claims 26
- 239000000463 material Substances 0.000 claims 13
- 239000000758 substrate Substances 0.000 claims 13
- 239000004065 semiconductor Substances 0.000 claims 8
- 238000005530 etching Methods 0.000 claims 1
- 239000002210 silicon-based material Substances 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2011-0136834 | 2011-12-16 | ||
| KR1020110136834A KR101894025B1 (ko) | 2011-12-16 | 2011-12-16 | 발광소자 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013128112A JP2013128112A (ja) | 2013-06-27 |
| JP2013128112A5 true JP2013128112A5 (enExample) | 2016-02-04 |
| JP6153322B2 JP6153322B2 (ja) | 2017-06-28 |
Family
ID=47713765
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012271868A Expired - Fee Related JP6153322B2 (ja) | 2011-12-16 | 2012-12-13 | 発光素子 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9153756B2 (enExample) |
| EP (1) | EP2605296B1 (enExample) |
| JP (1) | JP6153322B2 (enExample) |
| KR (1) | KR101894025B1 (enExample) |
| CN (1) | CN103165788B (enExample) |
| TW (1) | TWI587542B (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015033638A1 (ja) * | 2013-09-03 | 2015-03-12 | シャープ株式会社 | 半導体発光素子 |
| DE102013112740B4 (de) * | 2013-11-19 | 2021-03-18 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Strahlungsemittierendes Halbleiterbauelement |
| TWI614914B (zh) * | 2014-07-11 | 2018-02-11 | 晶元光電股份有限公司 | 發光元件及其製造方法 |
| US10128420B2 (en) * | 2016-12-30 | 2018-11-13 | Lite-On Technology Corporation | LED package structure and chip-scale light emitting unit |
| JP2018170333A (ja) * | 2017-03-29 | 2018-11-01 | 株式会社東芝 | 半導体装置及びその製造方法 |
| US10505087B2 (en) | 2017-08-24 | 2019-12-10 | Soko Kagaku Co., Ltd. | Method for manufacturing nitride semiconductor ultraviolet light-emitting element and nitride semiconductor ultraviolet light-emitting element |
| CN111146314B (zh) * | 2018-11-06 | 2021-02-23 | 中国科学院苏州纳米技术与纳米仿生研究所 | 提高氮化物半导体紫外发光二极管取光效率的方法及应用 |
| KR102669515B1 (ko) * | 2018-12-27 | 2024-05-28 | 삼성디스플레이 주식회사 | 디스플레이 장치 |
| DE102019100624A1 (de) | 2019-01-11 | 2020-07-16 | Osram Opto Semiconductors Gmbh | Optoelektronisches halbleiterbauelement mit erster und zweiter dielektrischer schicht und verfahren zur herstellung des optoelektronischen halbleiterbauelements |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5779924A (en) * | 1996-03-22 | 1998-07-14 | Hewlett-Packard Company | Ordered interface texturing for a light emitting device |
| JP2002319708A (ja) * | 2001-04-23 | 2002-10-31 | Matsushita Electric Works Ltd | Ｌｅｄチップおよびｌｅｄ装置 |
| JP4151282B2 (ja) * | 2002-03-01 | 2008-09-17 | 日亜化学工業株式会社 | 窒化物系半導体発光素子 |
| JP4590905B2 (ja) * | 2003-10-31 | 2010-12-01 | 豊田合成株式会社 | 発光素子および発光装置 |
| TW200419832A (en) * | 2004-04-16 | 2004-10-01 | Uni Light Technology Inc | Structure for increasing the light-emitting efficiency of a light-emitting device |
| KR100638819B1 (ko) * | 2005-05-19 | 2006-10-27 | 삼성전기주식회사 | 광추출효율이 개선된 수직구조 질화물 반도체 발광소자 |
| JP4778745B2 (ja) * | 2005-07-27 | 2011-09-21 | パナソニック株式会社 | 半導体発光装置及びその製造方法 |
| JP4829190B2 (ja) * | 2007-08-22 | 2011-12-07 | 株式会社東芝 | 発光素子 |
| US20100283074A1 (en) * | 2007-10-08 | 2010-11-11 | Kelley Tommie W | Light emitting diode with bonded semiconductor wavelength converter |
| CN101911317B (zh) | 2007-12-28 | 2012-06-06 | 日亚化学工业株式会社 | 半导体发光元件及其制造方法 |
| KR101533296B1 (ko) | 2008-07-08 | 2015-07-02 | 삼성전자주식회사 | 패턴 형성 기판을 구비한 질화물 반도체 발광소자 및 그제조방법 |
| KR101064016B1 (ko) * | 2008-11-26 | 2011-09-08 | 엘지이노텍 주식회사 | 발광 소자 및 그 제조방법 |
| KR20100095134A (ko) * | 2009-02-20 | 2010-08-30 | 엘지이노텍 주식회사 | 발광소자 및 그 제조방법 |
| US8637334B2 (en) * | 2009-11-03 | 2014-01-28 | The Regents Of The University Of California | High brightness light emitting diode covered by zinc oxide layers on multiple surfaces grown in low temperature aqueous solution |
| KR100993093B1 (ko) * | 2010-02-04 | 2010-11-08 | 엘지이노텍 주식회사 | 발광 소자 및 발광 소자 패키지 |
| KR101047639B1 (ko) * | 2010-04-19 | 2011-07-07 | 엘지이노텍 주식회사 | 반도체 발광소자, 발광 소자 패키지 및 반도체 발광 소자 제조방법 |
| CN102280553A (zh) * | 2010-06-10 | 2011-12-14 | 杨秋忠 | 覆晶发光二极管晶粒及其晶粒阵列 |
| US8723201B2 (en) * | 2010-08-20 | 2014-05-13 | Invenlux Corporation | Light-emitting devices with substrate coated with optically denser material |
| US8343788B2 (en) * | 2011-04-19 | 2013-01-01 | Epistar Corporation | Light emitting device and manufacturing method thereof |
| CN102184846A (zh) * | 2011-04-22 | 2011-09-14 | 东莞市中镓半导体科技有限公司 | 一种图形化衬底的制备方法 |
-
2011
- 2011-12-16 KR KR1020110136834A patent/KR101894025B1/ko not_active Expired - Fee Related
-
2012
- 2012-12-13 US US13/713,923 patent/US9153756B2/en active Active
- 2012-12-13 TW TW101147235A patent/TWI587542B/zh not_active IP Right Cessation
- 2012-12-13 EP EP12197046.1A patent/EP2605296B1/en not_active Not-in-force
- 2012-12-13 JP JP2012271868A patent/JP6153322B2/ja not_active Expired - Fee Related
- 2012-12-17 CN CN201210548276.4A patent/CN103165788B/zh active Active