JP6151395B2 - マルチノズルを有するガス注入システム、並びに、それを備えた粒子光学機器及びその使用方法 - Google Patents

マルチノズルを有するガス注入システム、並びに、それを備えた粒子光学機器及びその使用方法 Download PDF

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Publication number
JP6151395B2
JP6151395B2 JP2016031711A JP2016031711A JP6151395B2 JP 6151395 B2 JP6151395 B2 JP 6151395B2 JP 2016031711 A JP2016031711 A JP 2016031711A JP 2016031711 A JP2016031711 A JP 2016031711A JP 6151395 B2 JP6151395 B2 JP 6151395B2
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JP
Japan
Prior art keywords
fluid
gis
nozzle
gas
channel
Prior art date
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JP2016031711A
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English (en)
Japanese (ja)
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JP2016156092A (ja
JP2016156092A5 (enExample
Inventor
ヤコブ ランベルトス ムルダー ヨハネス
ヤコブ ランベルトス ムルダー ヨハネス
ヒュベルタス フランシスカス トロンペナールス ペトルス
ヒュベルタス フランシスカス トロンペナールス ペトルス
ドナ プラウン
ドナ プラウン
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FEI Co
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FEI Co
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Publication of JP2016156092A5 publication Critical patent/JP2016156092A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/221—Ion beam deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
    • B05B1/005—Nozzles or other outlets specially adapted for discharging one or more gases
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
    • B05B1/14—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means with multiple outlet openings; with strainers in or outside the outlet opening
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
    • B05B7/24—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas with means, e.g. a container, for supplying liquid or other fluent material to a discharge device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31732—Depositing thin layers on selected microareas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31749—Focused ion beam

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
JP2016031711A 2015-02-25 2016-02-23 マルチノズルを有するガス注入システム、並びに、それを備えた粒子光学機器及びその使用方法 Active JP6151395B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP15156537.1 2015-02-25
EP15156537.1A EP3062329B1 (en) 2015-02-25 2015-02-25 Multi-source GIS for particle-optical apparatus

Publications (3)

Publication Number Publication Date
JP2016156092A JP2016156092A (ja) 2016-09-01
JP2016156092A5 JP2016156092A5 (enExample) 2017-02-02
JP6151395B2 true JP6151395B2 (ja) 2017-06-21

Family

ID=52574075

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016031711A Active JP6151395B2 (ja) 2015-02-25 2016-02-23 マルチノズルを有するガス注入システム、並びに、それを備えた粒子光学機器及びその使用方法

Country Status (4)

Country Link
US (1) US20160244871A1 (enExample)
EP (1) EP3062329B1 (enExample)
JP (1) JP6151395B2 (enExample)
CN (1) CN105908150B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9962516B2 (en) 2010-09-09 2018-05-08 University Of Florida Research Foundation, Incorporated Context-sensitive flow interrupter and drainage outflow optimization system
EP3082148A1 (en) 2015-04-15 2016-10-19 FEI Company Method of manipulating a sample in an evacuated chamber of a charged particle apparatus

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0262039A (ja) * 1988-08-29 1990-03-01 Hitachi Ltd 多層素子の微細加工方法およびその装置
JP2645867B2 (ja) * 1988-09-08 1997-08-25 東海カーボン株式会社 ダイヤモンド膜の析出方法
JP2759568B2 (ja) * 1991-09-18 1998-05-28 アルプス電気株式会社 光学機能素子の製造方法
US5613509A (en) * 1991-12-24 1997-03-25 Maxwell Laboratories, Inc. Method and apparatus for removing contaminants and coatings from a substrate using pulsed radiant energy and liquid carbon dioxide
JP2974879B2 (ja) * 1993-04-07 1999-11-10 アルプス電気株式会社 プラズマｃｖｄによる合成方法
JPH07252662A (ja) * 1994-03-16 1995-10-03 Hitachi Ltd 高純度複合材およびその製法
JP3707129B2 (ja) * 1996-06-19 2005-10-19 株式会社日立製作所 投影型荷電粒子ビーム装置およびその方法
US6113983A (en) * 1997-04-03 2000-09-05 The United States Of America As Represented By The Secretary Of Commerce Method of forming metallic and ceramic thin film structures using metal halides and alkali metals
CN103170447B (zh) * 2005-08-30 2015-02-18 先进科技材料公司 使用替代的氟化含硼前驱体的硼离子注入和用于注入的大氢化硼的形成
EP2199434A1 (en) * 2008-12-19 2010-06-23 FEI Company Method for forming microscopic structures on a substrate
US8617668B2 (en) * 2009-09-23 2013-12-31 Fei Company Method of using nitrogen based compounds to reduce contamination in beam-induced thin film deposition
CN201823642U (zh) * 2010-08-17 2011-05-11 华东理工大学 一种包含导向保护气流的激光熔覆同轴送粉喷嘴

Also Published As

Publication number Publication date
JP2016156092A (ja) 2016-09-01
CN105908150A (zh) 2016-08-31
CN105908150B (zh) 2017-06-23
EP3062329A1 (en) 2016-08-31
US20160244871A1 (en) 2016-08-25
EP3062329B1 (en) 2016-12-14

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