CN105908150B - 用于粒子光学仪器的多源gis - Google Patents
用于粒子光学仪器的多源gis Download PDFInfo
- Publication number
- CN105908150B CN105908150B CN201610103190.9A CN201610103190A CN105908150B CN 105908150 B CN105908150 B CN 105908150B CN 201610103190 A CN201610103190 A CN 201610103190A CN 105908150 B CN105908150 B CN 105908150B
- Authority
- CN
- China
- Prior art keywords
- gis
- nozzle
- fluid
- opening
- passage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 239000012530 fluid Substances 0.000 claims abstract description 33
- 238000000034 method Methods 0.000 claims abstract description 25
- 230000004907 flux Effects 0.000 claims abstract description 14
- 238000003860 storage Methods 0.000 claims abstract description 5
- 239000000463 material Substances 0.000 claims description 8
- 230000003647 oxidation Effects 0.000 claims description 5
- 238000007254 oxidation reaction Methods 0.000 claims description 5
- 230000005540 biological transmission Effects 0.000 claims description 3
- 239000007789 gas Substances 0.000 abstract description 44
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 14
- 229910052760 oxygen Inorganic materials 0.000 abstract description 14
- 239000001301 oxygen Substances 0.000 abstract description 14
- 239000002184 metal Substances 0.000 abstract description 7
- 229910052751 metal Inorganic materials 0.000 abstract description 7
- 239000002243 precursor Substances 0.000 abstract description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract description 3
- 239000010936 titanium Substances 0.000 abstract description 3
- 229910052719 titanium Inorganic materials 0.000 abstract description 3
- 238000000926 separation method Methods 0.000 abstract description 2
- 238000005137 deposition process Methods 0.000 abstract 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 11
- 238000000151 deposition Methods 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 238000010894 electron beam technology Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 239000003344 environmental pollutant Substances 0.000 description 4
- 230000000873 masking effect Effects 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 231100000719 pollutant Toxicity 0.000 description 4
- 238000010146 3D printing Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 239000006227 byproduct Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000001888 ion beam-induced deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 229910001423 beryllium ion Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/221—Ion beam deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
- B05B1/005—Nozzles or other outlets specially adapted for discharging one or more gases
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
- B05B1/14—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means with multiple outlet openings; with strainers in or outside the outlet opening
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
- B05B7/24—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas with means, e.g. a container, for supplying liquid or other fluent material to a discharge device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31732—Depositing thin layers on selected microareas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3174—Etching microareas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31749—Focused ion beam
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Analytical Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP15156537.1 | 2015-02-25 | ||
| EP15156537.1A EP3062329B1 (en) | 2015-02-25 | 2015-02-25 | Multi-source GIS for particle-optical apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105908150A CN105908150A (zh) | 2016-08-31 |
| CN105908150B true CN105908150B (zh) | 2017-06-23 |
Family
ID=52574075
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610103190.9A Active CN105908150B (zh) | 2015-02-25 | 2016-02-25 | 用于粒子光学仪器的多源gis |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20160244871A1 (enExample) |
| EP (1) | EP3062329B1 (enExample) |
| JP (1) | JP6151395B2 (enExample) |
| CN (1) | CN105908150B (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9962516B2 (en) | 2010-09-09 | 2018-05-08 | University Of Florida Research Foundation, Incorporated | Context-sensitive flow interrupter and drainage outflow optimization system |
| EP3082148A1 (en) | 2015-04-15 | 2016-10-19 | FEI Company | Method of manipulating a sample in an evacuated chamber of a charged particle apparatus |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5055696A (en) * | 1988-08-29 | 1991-10-08 | Hitachi, Ltd. | Multilayered device micro etching method and system |
| US6113983A (en) * | 1997-04-03 | 2000-09-05 | The United States Of America As Represented By The Secretary Of Commerce | Method of forming metallic and ceramic thin film structures using metal halides and alkali metals |
| CN201823642U (zh) * | 2010-08-17 | 2011-05-11 | 华东理工大学 | 一种包含导向保护气流的激光熔覆同轴送粉喷嘴 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2645867B2 (ja) * | 1988-09-08 | 1997-08-25 | 東海カーボン株式会社 | ダイヤモンド膜の析出方法 |
| JP2759568B2 (ja) * | 1991-09-18 | 1998-05-28 | アルプス電気株式会社 | 光学機能素子の製造方法 |
| US5613509A (en) * | 1991-12-24 | 1997-03-25 | Maxwell Laboratories, Inc. | Method and apparatus for removing contaminants and coatings from a substrate using pulsed radiant energy and liquid carbon dioxide |
| JP2974879B2 (ja) * | 1993-04-07 | 1999-11-10 | アルプス電気株式会社 | プラズマｃｖｄによる合成方法 |
| JPH07252662A (ja) * | 1994-03-16 | 1995-10-03 | Hitachi Ltd | 高純度複合材およびその製法 |
| JP3707129B2 (ja) * | 1996-06-19 | 2005-10-19 | 株式会社日立製作所 | 投影型荷電粒子ビーム装置およびその方法 |
| KR101297917B1 (ko) * | 2005-08-30 | 2013-08-27 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | 대안적인 불화 붕소 전구체를 이용한 붕소 이온 주입 방법,및 주입을 위한 대형 수소화붕소의 형성 방법 |
| EP2199434A1 (en) * | 2008-12-19 | 2010-06-23 | FEI Company | Method for forming microscopic structures on a substrate |
| US8617668B2 (en) * | 2009-09-23 | 2013-12-31 | Fei Company | Method of using nitrogen based compounds to reduce contamination in beam-induced thin film deposition |
-
2015
- 2015-02-25 EP EP15156537.1A patent/EP3062329B1/en active Active
-
2016
- 2016-02-23 JP JP2016031711A patent/JP6151395B2/ja active Active
- 2016-02-24 US US15/052,716 patent/US20160244871A1/en not_active Abandoned
- 2016-02-25 CN CN201610103190.9A patent/CN105908150B/zh active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5055696A (en) * | 1988-08-29 | 1991-10-08 | Hitachi, Ltd. | Multilayered device micro etching method and system |
| US6113983A (en) * | 1997-04-03 | 2000-09-05 | The United States Of America As Represented By The Secretary Of Commerce | Method of forming metallic and ceramic thin film structures using metal halides and alkali metals |
| CN201823642U (zh) * | 2010-08-17 | 2011-05-11 | 华东理工大学 | 一种包含导向保护气流的激光熔覆同轴送粉喷嘴 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2016156092A (ja) | 2016-09-01 |
| US20160244871A1 (en) | 2016-08-25 |
| CN105908150A (zh) | 2016-08-31 |
| EP3062329B1 (en) | 2016-12-14 |
| EP3062329A1 (en) | 2016-08-31 |
| JP6151395B2 (ja) | 2017-06-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |