JP6150299B2 - マスクブランク、転写用マスクの製造方法及び半導体装置の製造方法 - Google Patents

マスクブランク、転写用マスクの製造方法及び半導体装置の製造方法 Download PDF

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Publication number
JP6150299B2
JP6150299B2 JP2014070685A JP2014070685A JP6150299B2 JP 6150299 B2 JP6150299 B2 JP 6150299B2 JP 2014070685 A JP2014070685 A JP 2014070685A JP 2014070685 A JP2014070685 A JP 2014070685A JP 6150299 B2 JP6150299 B2 JP 6150299B2
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JP
Japan
Prior art keywords
film
light
pattern
mask
shielding film
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Active
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JP2014070685A
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English (en)
Japanese (ja)
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JP2015191218A5 (enExample
JP2015191218A (ja
Inventor
博明 宍戸
博明 宍戸
野澤　順
順 野澤
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Hoya Corp
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Hoya Corp
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Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Priority to JP2014070685A priority Critical patent/JP6150299B2/ja
Priority to TW104110324A priority patent/TWI621906B/zh
Priority to US15/129,904 priority patent/US9864268B2/en
Priority to PCT/JP2015/059852 priority patent/WO2015152123A1/ja
Priority to KR1020167030032A priority patent/KR102295453B1/ko
Publication of JP2015191218A publication Critical patent/JP2015191218A/ja
Publication of JP2015191218A5 publication Critical patent/JP2015191218A5/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48—Protective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/692—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their composition, e.g. multilayer masks or materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/693—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane
    • H10P50/695—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
JP2014070685A 2014-03-30 2014-03-30 マスクブランク、転写用マスクの製造方法及び半導体装置の製造方法 Active JP6150299B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2014070685A JP6150299B2 (ja) 2014-03-30 2014-03-30 マスクブランク、転写用マスクの製造方法及び半導体装置の製造方法
TW104110324A TWI621906B (zh) 2014-03-30 2015-03-30 光罩基底、轉印用光罩之製造方法及半導體裝置之製造方法
US15/129,904 US9864268B2 (en) 2014-03-30 2015-03-30 Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device
PCT/JP2015/059852 WO2015152123A1 (ja) 2014-03-30 2015-03-30 マスクブランク、転写用マスクの製造方法及び半導体装置の製造方法
KR1020167030032A KR102295453B1 (ko) 2014-03-30 2015-03-30 마스크 블랭크, 전사용 마스크의 제조 방법 및 반도체 장치의 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014070685A JP6150299B2 (ja) 2014-03-30 2014-03-30 マスクブランク、転写用マスクの製造方法及び半導体装置の製造方法

Related Child Applications (1)

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JP2017097967A Division JP6430585B2 (ja) 2017-05-17 2017-05-17 マスクブランク、転写用マスクの製造方法及び半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2015191218A JP2015191218A (ja) 2015-11-02
JP2015191218A5 JP2015191218A5 (enExample) 2017-04-27
JP6150299B2 true JP6150299B2 (ja) 2017-06-21

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JP2014070685A Active JP6150299B2 (ja) 2014-03-30 2014-03-30 マスクブランク、転写用マスクの製造方法及び半導体装置の製造方法

Country Status (5)

Country Link
US (1) US9864268B2 (enExample)
JP (1) JP6150299B2 (enExample)
KR (1) KR102295453B1 (enExample)
TW (1) TWI621906B (enExample)
WO (1) WO2015152123A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017161931A (ja) * 2017-05-17 2017-09-14 Hoya株式会社 マスクブランク、転写用マスクの製造方法及び半導体装置の製造方法

Families Citing this family (18)

* Cited by examiner, † Cited by third party
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JP6292581B2 (ja) * 2014-03-30 2018-03-14 Hoya株式会社 マスクブランク、転写用マスクの製造方法及び半導体装置の製造方法
JP6608613B2 (ja) * 2015-05-12 2019-11-20 Ｈｏｙａ株式会社 位相シフトマスクブランク、位相シフトマスクの製造方法及び半導体装置の製造方法
SG10201911774WA (en) * 2015-11-06 2020-02-27 Hoya Corp Mask blank, method for manufacturing phase shift mask, and method for manufacturing semiconductor device
JP6744100B2 (ja) * 2016-01-15 2020-08-19 Hoya株式会社 転写用マスクの製造方法
KR102313892B1 (ko) 2016-03-29 2021-10-15 호야 가부시키가이샤 마스크 블랭크, 마스크 블랭크의 제조 방법, 전사용 마스크의 제조 방법 및 반도체 디바이스의 제조 방법
JP6556673B2 (ja) * 2016-07-26 2019-08-07 Hoya株式会社 フォトマスクの製造方法、描画装置、表示装置の製造方法、フォトマスク基板の検査方法、及びフォトマスク基板の検査装置
SG11201901299SA (en) 2016-08-26 2019-03-28 Hoya Corp Mask blank, transfer mask, and method of manufacturing semiconductor device
JP6780550B2 (ja) * 2017-03-10 2020-11-04 信越化学工業株式会社 フォトマスクブランク
SG11201907839RA (en) * 2017-03-31 2019-10-30 Toppan Printing Co Ltd Phase shift mask blank, phase shift mask and manufacturing method for phase shift mask
US11048160B2 (en) * 2017-06-14 2021-06-29 Hoya Corporation Mask blank, phase shift mask and method for manufacturing semiconductor device
JP6819546B2 (ja) * 2017-11-13 2021-01-27 信越化学工業株式会社 フォトマスクブランク、及びフォトマスクの製造方法
CN109917616B (zh) * 2017-12-12 2022-07-05 中芯国际集成电路制造(北京)有限公司 用于双重图案化的掩模版的制作方法及双重图案化方法
JP7219010B2 (ja) * 2018-03-30 2023-02-07 株式会社トッパンフォトマスク 位相シフトマスクブランク
JP7280171B2 (ja) * 2019-12-05 2023-05-23 信越化学工業株式会社 フォトマスクブランク、フォトマスクの製造方法及びフォトマスク
JP7350682B2 (ja) * 2020-03-23 2023-09-26 Hoya株式会社 マスクブランク及び転写用マスクの製造方法
KR102402742B1 (ko) * 2021-04-30 2022-05-26 에스케이씨솔믹스 주식회사 포토마스크 블랭크 및 이를 이용한 포토마스크
KR102475672B1 (ko) * 2021-11-03 2022-12-07 에스케이씨솔믹스 주식회사 블랭크 마스크 및 이를 이용한 포토마스크
KR102535171B1 (ko) * 2021-11-04 2023-05-26 에스케이엔펄스 주식회사 블랭크 마스크 및 이를 이용한 포토마스크

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JP2909317B2 (ja) * 1992-08-20 1999-06-23 三菱電機株式会社 フォトマスク
DE112004000591B4 (de) 2003-04-09 2020-09-10 Hoya Corp. Herstellungsverfahren für Photomaske
TWI451191B (zh) * 2005-12-26 2014-09-01 Ｈｏｙａ股份有限公司 A manufacturing method of a mask blank and a mask, and a method of manufacturing the semiconductor device
JP4614877B2 (ja) * 2005-12-27 2011-01-19 Ｈｏｙａ株式会社 フォトマスクブランクの製造方法及びフォトマスクの製造方法
JP4509050B2 (ja) * 2006-03-10 2010-07-21 信越化学工業株式会社 フォトマスクブランク及びフォトマスク
KR102198731B1 (ko) * 2008-06-25 2021-01-05 호야 가부시키가이샤 위상 시프트 마스크 블랭크 및 위상 시프트 마스크
JP5702920B2 (ja) * 2008-06-25 2015-04-15 Hoya株式会社 位相シフトマスクブランク、位相シフトマスクおよび位相シフトマスクブランクの製造方法
JP5123349B2 (ja) * 2010-04-19 2013-01-23 Ｈｏｙａ株式会社 多階調マスクの製造方法
JP5865263B2 (ja) * 2010-12-24 2016-02-17 Hoya株式会社 マスクブランク及びその製造方法、並びに転写用マスク及びその製造方法
JP6062195B2 (ja) * 2011-11-30 2017-01-18 Hoya株式会社 転写用マスクの製造方法及び半導体デバイスの製造方法
JP5739375B2 (ja) * 2012-05-16 2015-06-24 信越化学工業株式会社 ハーフトーン位相シフトマスクブランク及びハーフトーン位相シフトマスクの製造方法
WO2014127383A2 (en) 2013-02-17 2014-08-21 Zeliff Zachary Joseph Stylus for capacitive touchscreen
JP5779290B1 (ja) * 2014-03-28 2015-09-16 Hoya株式会社 マスクブランク、位相シフトマスクの製造方法、位相シフトマスク、および半導体デバイスの製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017161931A (ja) * 2017-05-17 2017-09-14 Hoya株式会社 マスクブランク、転写用マスクの製造方法及び半導体装置の製造方法

Also Published As

Publication number Publication date
TW201600922A (zh) 2016-01-01
US20170168384A1 (en) 2017-06-15
KR20160138247A (ko) 2016-12-02
JP2015191218A (ja) 2015-11-02
WO2015152123A1 (ja) 2015-10-08
TWI621906B (zh) 2018-04-21
KR102295453B1 (ko) 2021-08-27
US9864268B2 (en) 2018-01-09

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