JP6150299B2 - マスクブランク、転写用マスクの製造方法及び半導体装置の製造方法 - Google Patents

マスクブランク、転写用マスクの製造方法及び半導体装置の製造方法 Download PDF

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JP6150299B2
JP6150299B2 JP2014070685A JP2014070685A JP6150299B2 JP 6150299 B2 JP6150299 B2 JP 6150299B2 JP 2014070685 A JP2014070685 A JP 2014070685A JP 2014070685 A JP2014070685 A JP 2014070685A JP 6150299 B2 JP6150299 B2 JP 6150299B2
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Japan
Prior art keywords
film
light
pattern
mask
shielding film
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JP2014070685A
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Japanese (ja)
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JP2015191218A (ja
JP2015191218A5 (enExample
Inventor
博明 宍戸
博明 宍戸
野澤　順
順 野澤
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Hoya Corp
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Hoya Corp
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Priority to JP2014070685A priority Critical patent/JP6150299B2/ja
Priority to US15/129,904 priority patent/US9864268B2/en
Priority to PCT/JP2015/059852 priority patent/WO2015152123A1/ja
Priority to KR1020167030032A priority patent/KR102295453B1/ko
Priority to TW104110324A priority patent/TWI621906B/zh
Publication of JP2015191218A publication Critical patent/JP2015191218A/ja
Publication of JP2015191218A5 publication Critical patent/JP2015191218A5/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48—Protective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/3086—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP2014070685A 2014-03-30 2014-03-30 マスクブランク、転写用マスクの製造方法及び半導体装置の製造方法 Active JP6150299B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2014070685A JP6150299B2 (ja) 2014-03-30 2014-03-30 マスクブランク、転写用マスクの製造方法及び半導体装置の製造方法
US15/129,904 US9864268B2 (en) 2014-03-30 2015-03-30 Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device
PCT/JP2015/059852 WO2015152123A1 (ja) 2014-03-30 2015-03-30 マスクブランク、転写用マスクの製造方法及び半導体装置の製造方法
KR1020167030032A KR102295453B1 (ko) 2014-03-30 2015-03-30 마스크 블랭크, 전사용 마스크의 제조 방법 및 반도체 장치의 제조 방법
TW104110324A TWI621906B (zh) 2014-03-30 2015-03-30 光罩基底、轉印用光罩之製造方法及半導體裝置之製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014070685A JP6150299B2 (ja) 2014-03-30 2014-03-30 マスクブランク、転写用マスクの製造方法及び半導体装置の製造方法

Related Child Applications (1)

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JP2017097967A Division JP6430585B2 (ja) 2017-05-17 2017-05-17 マスクブランク、転写用マスクの製造方法及び半導体装置の製造方法

Publications (3)

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JP2015191218A JP2015191218A (ja) 2015-11-02
JP2015191218A5 JP2015191218A5 (enExample) 2017-04-27
JP6150299B2 true JP6150299B2 (ja) 2017-06-21

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JP2014070685A Active JP6150299B2 (ja) 2014-03-30 2014-03-30 マスクブランク、転写用マスクの製造方法及び半導体装置の製造方法

Country Status (5)

Country Link
US (1) US9864268B2 (enExample)
JP (1) JP6150299B2 (enExample)
KR (1) KR102295453B1 (enExample)
TW (1) TWI621906B (enExample)
WO (1) WO2015152123A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017161931A (ja) * 2017-05-17 2017-09-14 Hoya株式会社 マスクブランク、転写用マスクの製造方法及び半導体装置の製造方法

Families Citing this family (18)

* Cited by examiner, † Cited by third party
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JP6292581B2 (ja) * 2014-03-30 2018-03-14 Hoya株式会社 マスクブランク、転写用マスクの製造方法及び半導体装置の製造方法
JP6608613B2 (ja) * 2015-05-12 2019-11-20 Ｈｏｙａ株式会社 位相シフトマスクブランク、位相シフトマスクの製造方法及び半導体装置の製造方法
WO2017077915A1 (ja) * 2015-11-06 2017-05-11 Hoya株式会社 マスクブランク、位相シフトマスクの製造方法、及び半導体デバイスの製造方法
JP6744100B2 (ja) * 2016-01-15 2020-08-19 Hoya株式会社 転写用マスクの製造方法
WO2017169587A1 (ja) 2016-03-29 2017-10-05 Hoya株式会社 マスクブランク、マスクブランクの製造方法、転写用マスクの製造方法および半導体デバイスの製造方法
JP6556673B2 (ja) * 2016-07-26 2019-08-07 Hoya株式会社 フォトマスクの製造方法、描画装置、表示装置の製造方法、フォトマスク基板の検査方法、及びフォトマスク基板の検査装置
US11112690B2 (en) * 2016-08-26 2021-09-07 Hoya Corporation Mask blank, transfer mask, and method for manufacturing semiconductor device
JP6780550B2 (ja) * 2017-03-10 2020-11-04 信越化学工業株式会社 フォトマスクブランク
KR102553992B1 (ko) * 2017-03-31 2023-07-10 가부시키가이샤 토판 포토마스크 위상 시프트 마스크 블랭크, 위상 시프트 마스크 및 위상 시프트 마스크의 제조 방법
CN110770652B (zh) * 2017-06-14 2023-03-21 Hoya株式会社 掩模坯料、相移掩模及半导体器件的制造方法
JP6819546B2 (ja) * 2017-11-13 2021-01-27 信越化学工業株式会社 フォトマスクブランク、及びフォトマスクの製造方法
CN109917616B (zh) * 2017-12-12 2022-07-05 中芯国际集成电路制造(北京)有限公司 用于双重图案化的掩模版的制作方法及双重图案化方法
JP7219010B2 (ja) * 2018-03-30 2023-02-07 株式会社トッパンフォトマスク 位相シフトマスクブランク
JP7280171B2 (ja) * 2019-12-05 2023-05-23 信越化学工業株式会社 フォトマスクブランク、フォトマスクの製造方法及びフォトマスク
JP7350682B2 (ja) * 2020-03-23 2023-09-26 Hoya株式会社 マスクブランク及び転写用マスクの製造方法
KR102402742B1 (ko) * 2021-04-30 2022-05-26 에스케이씨솔믹스 주식회사 포토마스크 블랭크 및 이를 이용한 포토마스크
KR102475672B1 (ko) * 2021-11-03 2022-12-07 에스케이씨솔믹스 주식회사 블랭크 마스크 및 이를 이용한 포토마스크
KR102535171B1 (ko) * 2021-11-04 2023-05-26 에스케이엔펄스 주식회사 블랭크 마스크 및 이를 이용한 포토마스크

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JP2909317B2 (ja) * 1992-08-20 1999-06-23 三菱電機株式会社 フォトマスク
JPWO2004090635A1 (ja) 2003-04-09 2006-07-06 Hoya株式会社 フォトマスクの製造方法及びフォトマスクブランク
TWI397766B (zh) * 2005-12-26 2013-06-01 Hoya Corp A manufacturing method of a mask blank and a mask, and a method of manufacturing the semiconductor device
JP4614877B2 (ja) 2005-12-27 2011-01-19 Ｈｏｙａ株式会社 フォトマスクブランクの製造方法及びフォトマスクの製造方法
JP4509050B2 (ja) * 2006-03-10 2010-07-21 信越化学工業株式会社 フォトマスクブランク及びフォトマスク
JP5702920B2 (ja) * 2008-06-25 2015-04-15 Hoya株式会社 位相シフトマスクブランク、位相シフトマスクおよび位相シフトマスクブランクの製造方法
US8329364B2 (en) * 2008-06-25 2012-12-11 Hoya Corporation Phase shift mask blank and phase shift mask
JP5123349B2 (ja) * 2010-04-19 2013-01-23 Ｈｏｙａ株式会社 多階調マスクの製造方法
KR101883025B1 (ko) * 2010-12-24 2018-07-27 호야 가부시키가이샤 마스크 블랭크 및 그 제조 방법, 및 전사용 마스크 및 그 제조 방법
JP6062195B2 (ja) * 2011-11-30 2017-01-18 Hoya株式会社 転写用マスクの製造方法及び半導体デバイスの製造方法
JP5739375B2 (ja) * 2012-05-16 2015-06-24 信越化学工業株式会社 ハーフトーン位相シフトマスクブランク及びハーフトーン位相シフトマスクの製造方法
WO2014127383A2 (en) 2013-02-17 2014-08-21 Zeliff Zachary Joseph Stylus for capacitive touchscreen
JP5779290B1 (ja) * 2014-03-28 2015-09-16 Hoya株式会社 マスクブランク、位相シフトマスクの製造方法、位相シフトマスク、および半導体デバイスの製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017161931A (ja) * 2017-05-17 2017-09-14 Hoya株式会社 マスクブランク、転写用マスクの製造方法及び半導体装置の製造方法

Also Published As

Publication number Publication date
KR20160138247A (ko) 2016-12-02
JP2015191218A (ja) 2015-11-02
US9864268B2 (en) 2018-01-09
TWI621906B (zh) 2018-04-21
WO2015152123A1 (ja) 2015-10-08
US20170168384A1 (en) 2017-06-15
TW201600922A (zh) 2016-01-01
KR102295453B1 (ko) 2021-08-27

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