JP6127526B2 - レーザー加工装置、および、パターン付き基板の加工条件設定方法 - Google Patents

レーザー加工装置、および、パターン付き基板の加工条件設定方法 Download PDF

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JP6127526B2
JP6127526B2 JP2013005256A JP2013005256A JP6127526B2 JP 6127526 B2 JP6127526 B2 JP 6127526B2 JP 2013005256 A JP2013005256 A JP 2013005256A JP 2013005256 A JP2013005256 A JP 2013005256A JP 6127526 B2 JP6127526 B2 JP 6127526B2
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processing
offset
substrate
temporary
laser
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JP2013005256A
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Japanese (ja)
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JP2014111275A (ja
Inventor
久司 五十川
久司 五十川
正平 長友
正平 長友
郁祥 中谷
郁祥 中谷
直哉 木山
直哉 木山
佑磨 岩坪
佑磨 岩坪
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Mitsuboshi Diamond Industrial Co Ltd
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Mitsuboshi Diamond Industrial Co Ltd
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Priority to JP2013005256A priority Critical patent/JP6127526B2/ja
Priority to TW102116171A priority patent/TWI600489B/zh
Priority to KR1020130074394A priority patent/KR101854676B1/ko
Priority to CN201310404347.8A priority patent/CN103785945B/zh
Publication of JP2014111275A publication Critical patent/JP2014111275A/ja
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  • Laser Beam Processing (AREA)
  • Dicing (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
JP2013005256A 2012-10-29 2013-01-16 レーザー加工装置、および、パターン付き基板の加工条件設定方法 Active JP6127526B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2013005256A JP6127526B2 (ja) 2012-10-29 2013-01-16 レーザー加工装置、および、パターン付き基板の加工条件設定方法
TW102116171A TWI600489B (zh) 2012-10-29 2013-05-07 Laser processing apparatus, and method for setting processing conditions of a pattern substrate
KR1020130074394A KR101854676B1 (ko) 2012-10-29 2013-06-27 레이저 가공 장치 및, 패턴이 있는 기판의 가공 조건 설정 방법
CN201310404347.8A CN103785945B (zh) 2012-10-29 2013-09-03 激光加工装置及附图案基板的加工条件设定方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012237729 2012-10-29
JP2012237729 2012-10-29
JP2013005256A JP6127526B2 (ja) 2012-10-29 2013-01-16 レーザー加工装置、および、パターン付き基板の加工条件設定方法

Related Child Applications (2)

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JP2014152496A Division JP5913472B2 (ja) 2012-10-29 2014-07-28 レーザー加工装置
JP2017064824A Division JP6424918B2 (ja) 2012-10-29 2017-03-29 レーザー加工装置

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JP2014111275A JP2014111275A (ja) 2014-06-19
JP6127526B2 true JP6127526B2 (ja) 2017-05-17

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JP2013005256A Active JP6127526B2 (ja) 2012-10-29 2013-01-16 レーザー加工装置、および、パターン付き基板の加工条件設定方法
JP2014152496A Active JP5913472B2 (ja) 2012-10-29 2014-07-28 レーザー加工装置
JP2017064824A Active JP6424918B2 (ja) 2012-10-29 2017-03-29 レーザー加工装置

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JP2017064824A Active JP6424918B2 (ja) 2012-10-29 2017-03-29 レーザー加工装置

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TW (1) TWI600489B (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11833611B2 (en) 2018-10-30 2023-12-05 Hamamatsu Photonics K.K. Laser machining device
US11897056B2 (en) 2018-10-30 2024-02-13 Hamamatsu Photonics K.K. Laser processing device and laser processing method

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6064519B2 (ja) * 2012-10-29 2017-01-25 三星ダイヤモンド工業株式会社 レーザー加工装置、および、パターン付き基板の加工条件設定方法
JP6036173B2 (ja) * 2012-10-31 2016-11-30 三星ダイヤモンド工業株式会社 レーザー加工装置
JP6241174B2 (ja) * 2013-09-25 2017-12-06 三星ダイヤモンド工業株式会社 レーザー加工装置、および、パターン付き基板の加工条件設定方法
TWI566870B (zh) * 2014-09-30 2017-01-21 國立交通大學 雷射加工方法及雷射加工物
JP6594699B2 (ja) * 2015-08-18 2019-10-23 浜松ホトニクス株式会社 加工対象物切断方法及び加工対象物切断装置
JP7325897B2 (ja) * 2019-04-18 2023-08-15 株式会社ディスコ 加工装置及び被加工物の加工方法
JP2022018505A (ja) * 2020-07-15 2022-01-27 浜松ホトニクス株式会社 レーザ加工方法、及び、半導体部材の製造方法
JP2022018506A (ja) * 2020-07-15 2022-01-27 浜松ホトニクス株式会社 半導体部材の製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4659300B2 (ja) * 2000-09-13 2011-03-30 浜松ホトニクス株式会社 レーザ加工方法及び半導体チップの製造方法
JP5183892B2 (ja) * 2006-07-03 2013-04-17 浜松ホトニクス株式会社 レーザ加工方法
KR101509834B1 (ko) * 2007-08-03 2015-04-14 니치아 카가쿠 고교 가부시키가이샤 반도체 발광 소자 및 그 제조 방법
KR101757937B1 (ko) * 2009-02-09 2017-07-13 하마마츠 포토닉스 가부시키가이샤 가공대상물 절단방법
JP2010271165A (ja) * 2009-05-21 2010-12-02 Aisin Aw Co Ltd プリント基板の検査装置
TW201114535A (en) * 2009-10-20 2011-05-01 Foxsemicon Integrated Tech Inc Apparatus and method for laser cutting
JP5056839B2 (ja) * 2009-12-25 2012-10-24 三星ダイヤモンド工業株式会社 被加工物の加工方法および被加工物の分割方法
JP2011181909A (ja) * 2010-02-02 2011-09-15 Mitsubishi Chemicals Corp 半導体チップ製造方法
JP5438570B2 (ja) * 2010-03-23 2014-03-12 アキレス株式会社 遮光性フィルム及びこれを用いる遮光性粘着シート
JP5940783B2 (ja) * 2011-09-07 2016-06-29 株式会社ディスコ 板状物の加工方法
JP6064519B2 (ja) * 2012-10-29 2017-01-25 三星ダイヤモンド工業株式会社 レーザー加工装置、および、パターン付き基板の加工条件設定方法
JP6131449B2 (ja) * 2013-02-07 2017-05-24 三井金属アクト株式会社 車両用ドア開閉装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11833611B2 (en) 2018-10-30 2023-12-05 Hamamatsu Photonics K.K. Laser machining device
US11897056B2 (en) 2018-10-30 2024-02-13 Hamamatsu Photonics K.K. Laser processing device and laser processing method

Also Published As

Publication number Publication date
JP5913472B2 (ja) 2016-04-27
JP2014225691A (ja) 2014-12-04
JP2014111275A (ja) 2014-06-19
TWI600489B (zh) 2017-10-01
JP6424918B2 (ja) 2018-11-21
TW201416156A (zh) 2014-05-01
JP2017119310A (ja) 2017-07-06

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