JP6127128B2 - ｐｎ構造ゲートを備える復調ピクセル - Google Patents

ｐｎ構造ゲートを備える復調ピクセル Download PDF

Info

Publication number
JP6127128B2
JP6127128B2 JP2015500994A JP2015500994A JP6127128B2 JP 6127128 B2 JP6127128 B2 JP 6127128B2 JP 2015500994 A JP2015500994 A JP 2015500994A JP 2015500994 A JP2015500994 A JP 2015500994A JP 6127128 B2 JP6127128 B2 JP 6127128B2
Authority
JP
Japan
Prior art keywords
gate
pixel
region
type
demodulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2015500994A
Other languages
English (en)
Japanese (ja)
Other versions
JP2015512562A5 (enrdf_load_stackoverflow
JP2015512562A (ja
Inventor
ブエットゲン・ベルンハルト
リーマン・ミハエル
ファエッロ・ブルーノ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Sensors Singapore Pte Ltd
Original Assignee
Heptagon Micro Optics Pte Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Heptagon Micro Optics Pte Ltd filed Critical Heptagon Micro Optics Pte Ltd
Publication of JP2015512562A publication Critical patent/JP2015512562A/ja
Publication of JP2015512562A5 publication Critical patent/JP2015512562A5/ja
Application granted granted Critical
Publication of JP6127128B2 publication Critical patent/JP6127128B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • H10F30/285—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors the devices having PN homojunction gates
    • H10F30/2857—CCDs having PN homojunction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/671—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor having lateral variation in doping or structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2015500994A 2012-03-20 2013-03-20 ｐｎ構造ゲートを備える復調ピクセル Active JP6127128B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261613363P 2012-03-20 2012-03-20
US61/613,363 2012-03-20
PCT/IB2013/000422 WO2013140227A1 (en) 2012-03-20 2013-03-20 Pn-structured gate demodulation pixel

Publications (3)

Publication Number Publication Date
JP2015512562A JP2015512562A (ja) 2015-04-27
JP2015512562A5 JP2015512562A5 (enrdf_load_stackoverflow) 2016-03-17
JP6127128B2 true JP6127128B2 (ja) 2017-05-10

Family

ID=48227339

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015500994A Active JP6127128B2 (ja) 2012-03-20 2013-03-20 ｐｎ構造ゲートを備える復調ピクセル

Country Status (7)

Country Link
US (1) US9343607B2 (enrdf_load_stackoverflow)
EP (1) EP2828891B1 (enrdf_load_stackoverflow)
JP (1) JP6127128B2 (enrdf_load_stackoverflow)
KR (1) KR102094738B1 (enrdf_load_stackoverflow)
CN (1) CN104303304B (enrdf_load_stackoverflow)
AU (1) AU2013237141B2 (enrdf_load_stackoverflow)
WO (1) WO2013140227A1 (enrdf_load_stackoverflow)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9721987B2 (en) * 2014-02-03 2017-08-01 Taiwan Semiconductor Manufacturing Co., Ltd. Pixel with transistor gate covering photodiode
CN105097850B (zh) * 2014-04-25 2019-03-29 格科微电子（上海）有限公司 Cmos图像传感器及其制造方法
GB2537421A (en) 2015-04-17 2016-10-19 Stmicroelectronics (Research & Development) Ltd A pixel having a plurality of photodiodes
EP3082165B1 (en) * 2015-04-17 2021-07-28 STMicroelectronics (Research & Development) Limited A pixel having a plurality of pinned photodiodes
US9860466B2 (en) * 2015-05-14 2018-01-02 Kla-Tencor Corporation Sensor with electrically controllable aperture for inspection and metrology systems
CN105161462A (zh) * 2015-07-22 2015-12-16 格科微电子（上海）有限公司 提高背照式图像传感器的载流子传输效率的方法
US10418410B2 (en) 2015-10-08 2019-09-17 Ams Sensors Singapore Pte. Ltd. Optoelectronic modules operable to collect spectral data and distance data
TWI571938B (zh) * 2015-10-15 2017-02-21 力晶科技股份有限公司 半導體元件及其製造方法
US10276628B2 (en) 2016-05-17 2019-04-30 Ams Sensors Singapore Pte. Ltd. Time-of-fight pixel including in-pixel buried channel transistors
JP6967716B2 (ja) * 2017-06-29 2021-11-17 パナソニックＩｐマネジメント株式会社 光検出装置、及び撮像装置
JP7209170B2 (ja) * 2017-06-29 2023-01-20 パナソニックＩｐマネジメント株式会社 光検出装置、及び撮像装置
EP3923333B1 (en) * 2020-03-17 2024-12-11 Shenzhen Goodix Technology Co., Ltd. Optical sensor and time of flight-based distance measurement system
US11742370B2 (en) 2020-05-27 2023-08-29 Microsoft Technology Licensing, Llc Time-of-flight pixel with vertical photogates
CN112331688B (zh) * 2020-11-04 2022-07-29 中国电子科技集团公司第四十四研究所 一种同时实现大信号处理和高频转移的ccd结构
DE102020132868A1 (de) * 2020-12-09 2022-06-09 Ifm Electronic Gmbh Lichtlaufzeitpixel mit Ladungsspeicher
CN112864183B (zh) * 2021-01-18 2023-08-25 上海集成电路装备材料产业创新中心有限公司 一种改善传输迟滞的像元结构
CN113889495A (zh) * 2021-09-06 2022-01-04 天津大学 降低前馈效应的psd型传输栅图像传感器及制作方法
JP7572012B2 (ja) * 2022-08-27 2024-10-23 Ｔｏｐｐａｎホールディングス株式会社 光検出素子及び固体撮像装置
CN115548138B (zh) * 2022-08-31 2025-06-27 山东东仪光电仪器有限公司 低电容硅像素探测器阵列芯片及其制作方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2389960A (en) 2002-06-20 2003-12-24 Suisse Electronique Microtech Four-tap demodulation pixel
JP4280822B2 (ja) * 2004-02-18 2009-06-17 国立大学法人静岡大学 光飛行時間型距離センサ
US7288788B2 (en) * 2004-12-03 2007-10-30 International Business Machines Corporation Predoped transfer gate for an image sensor
ATE390715T1 (de) * 2005-10-19 2008-04-15 Suisse Electronique Microtech Einrichtung und verfahren zur demodulation von modulierten elektromagnetischen wellenfeldern
JP4847828B2 (ja) 2006-09-22 2011-12-28 旭化成エレクトロニクス株式会社 Ｃｍｏｓイメージセンサの製造方法
US8227844B2 (en) * 2008-01-14 2012-07-24 International Business Machines Corporation Low lag transfer gate device
US8953149B2 (en) * 2009-02-17 2015-02-10 Microsoft Corporation CMOS three-dimensional image sensor detectors having reduced inter-gate capacitance, and enhanced modulation contrast

Also Published As

Publication number Publication date
EP2828891B1 (en) 2017-03-15
US20130248938A1 (en) 2013-09-26
WO2013140227A1 (en) 2013-09-26
AU2013237141B2 (en) 2016-05-12
KR20140146088A (ko) 2014-12-24
CN104303304B (zh) 2017-10-03
CN104303304A (zh) 2015-01-21
JP2015512562A (ja) 2015-04-27
US9343607B2 (en) 2016-05-17
KR102094738B1 (ko) 2020-03-31
EP2828891A1 (en) 2015-01-28
AU2013237141A1 (en) 2014-08-21

Similar Documents

Publication Publication Date Title
JP6127128B2 (ja) ｐｎ構造ゲートを備える復調ピクセル
US20230369376A1 (en) Germanium-silicon light sensing apparatus ii
CN110970451B (zh) 图像传感器、集成电路及形成图像传感器的方法
US10861888B2 (en) Silicon germanium imager with photodiode in trench
CN107833899B (zh) 固体摄像装置
CN109691086B (zh) 光电转换元件
US11709238B2 (en) Demodulator with a carrier generating pinned photodiode and a method for operating it
JP7629652B2 (ja) Ｊｆｅｔソースフォロアを有するイメージセンサ及びイメージセンサ画素
US20170332024A1 (en) Optical sensor device and method for manufacturing the optical sensor device
JP2020517114A (ja) ゲルマニウム‐シリコン光感知装置ｉｉ
CN110431441B (zh) 用于调制的图像捕获的系统和方法
CN101834194A (zh) 包括遮光罩的像素传感器元件
KR20040093947A (ko) 다중 플로팅디퓨젼영역을 구비하는 씨모스 이미지센서
US8053821B2 (en) Image sensor with high conversion efficiency
CN111466027B (zh) 光电转换元件和固态摄像装置
JP7597381B2 (ja) Ｕｔｂｂ光検出器ピクセルユニット、アレイ及び方法
US10276614B2 (en) Methods and apparatus for an image sensor with a multi-branch transistor
CN108140652A (zh) 图像传感器像素的无栅极复位
JP2022131332A (ja) 半導体装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160125

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20160125

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20160706

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20160921

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20161101

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170131

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20170214

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170302

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20170314

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20170410

R150 Certificate of patent or registration of utility model

Ref document number: 6127128

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250