JP6121993B2 - 半導体への高濃度活性ドーピングおよびこのようなドーピングにより生成される半導体装置 - Google Patents
半導体への高濃度活性ドーピングおよびこのようなドーピングにより生成される半導体装置 Download PDFInfo
- Publication number
- JP6121993B2 JP6121993B2 JP2014514454A JP2014514454A JP6121993B2 JP 6121993 B2 JP6121993 B2 JP 6121993B2 JP 2014514454 A JP2014514454 A JP 2014514454A JP 2014514454 A JP2014514454 A JP 2014514454A JP 6121993 B2 JP6121993 B2 JP 6121993B2
- Authority
- JP
- Japan
- Prior art keywords
- doping
- layer
- dopant
- situ
- active layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/3027—IV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/0245—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
- H01L21/02661—In-situ cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3086—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3223—IV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
- H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2214—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on oxides or nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
Description
本願は、2011年6月10日出願の米国仮出願第61/495,455号の利益を主張するものであり、同仮出願の全体を参照によって本願に援用する。
本発明は、海軍空中戦センター航空機部門から落札した契約第N00421−03−9−002号および空軍科学研究局から落札した契約第FA9550−06−1−0470号に基づく政府の支援を受けて成された。政府が本発明における特定の権限を有する。
デルタドーパント層を用いるGe in situドーピングとex situドーピング
ホットウォールUHVCVD成膜装置を使って、Ge層を6”のSi(100)基板上にエピタキシャル成長させた。まず、厚さ30nmのGeバッファ層を360℃の温度でSi基板上に直接成長させた。次に、温度を650℃に上げ、3.8sccmのGeH4と12sccmのPH3のガスフローにより、ドーピングレベル1×1019cm−3でリンをin situドーピングした、厚さ300nmのGe層を成長させた。比較のためにGe成長中にin situドーピングを行わずに、厚さ300nmのGe層も成長させた。
D0 *=2.2×10−4cm2/sであり、これはほぼ予測された計算と同程度である。伸長歪Geの真性キャリア濃度は、600℃で2.09×1017cm−3、700℃で3.88×1017cm−3であった。Ge活性層成長中のin situドーピングステップによって、アニーリング前のGe層内のキャリア濃度は7×1018cm−3に増大した。したがって、in situドープGe領域のエクストリンシック拡散率は、図10の四角で示されるように、真性Ge内の拡散率より約2桁高い。
イオン注入によるGeへのin situドーピングとex situドーピング
ホットウォールUHVCVD成膜装置を使って、Ge層を6”のSi(100)基板上にエピタキシャル成長させた。まず、厚さ30nmのGeバッファ層を360℃の温度でSi基板上に直接成長させた。次に、温度を650℃に上げ、3.8sccmのGeH4ガスフローと12sccmのPH3ガスフローにより、ドーピングレベル1×1019cm−3でリンをin situドーピングした、厚さ500nmのGe層を成長させた。
Geレーザの製造と動作
縦型注入電流励起Geレーザを前述の図7A〜7Kの製造シーケンスで製造し、その際、上記の実施例1の工程を用いて、厚さ30nmのGeバッファ層と約300nmのGe活性層を生成し、1×1019cm−3のリンドーピングでin situドーピングし、ここでは、これを図7Dに示される二酸化シリコン層内のトレンチ窓の中にメサ構造を成長させるために行った。4つの封止リンデルタ層を形成し、外方拡散を防止するために、厚さ100nmの二酸化シリコンのキャップ層を設けた。デルタドープ層からリンをGe活性層中に拡散させるための熱アニーリングを、700℃で1分間のRTAによって行った。次に、この構造を図7FのようにCMPによって平坦化し、デルタドーピング層とキャップ層を活性Ge層表面から除去した。CMPの後に残っているGe活性層の厚さを、基板全体にわたって測定したところ、表面の位置に応じて100nm〜300nmで変化することがわかった。CMP後の導波路の重大なディッシングにより、導波路内でサポートされる光モードを正確に測定することができなかった。最大の導波路で、6つのキャビティモードまでサポートできる。
Claims (5)
- 光子デバイスを形成する方法において、
第一のシリコン電極を形成するステップと、
前記第一のシリコン電極の上にゲルマニウム活性層を形成し、前記ゲルマニウム活性層の形成中にn型ドーパント原子をin situドーピングにより混入させ、ゲルマニウムの真性ドーパント濃度より高いドーパント濃度とするステップと、
前記ゲルマニウム活性層の表面上に第二のシリコン電極を形成するステップと、
前記ゲルマニウム活性層に追加のドーパントをex situドーピングによりドープするステップであって、その電気的に活性化したn型ドーパント濃度が前記in situドーピングにより混入されたドーパント濃度より高いステップと、
を含むことを特徴とする方法。 - 請求項1に記載の方法において、
前記ゲルマニウム活性層は、化学気相成長法により形成されることを特徴とする方法。 - 請求項1に記載の方法において、
第一のシリコン電極を形成するステップが、電気的にドープされたシリコン基板を提供するステップを含むことを特徴とする方法。 - 請求項1に記載の方法において、
第二の電極を形成するステップが、前記ゲルマニウム活性層の上にアモルファスシリコンの層を形成するステップと、前記アモルファスシリコンを多結晶シリコンに変換するステップを含むことを特徴とする方法。 - 請求項1に記載の方法において、
前記ゲルマニウム活性層にex situドーピングによりドーピングするステップが、前記ゲルマニウム活性層に、少なくとも約2×1019cm-3の電気的に活性化したn型ドーパント濃度となるようにドーピングするステップを含むことを特徴とする方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161495455P | 2011-06-10 | 2011-06-10 | |
US61/495,455 | 2011-06-10 | ||
PCT/US2012/027350 WO2012170087A1 (en) | 2011-06-10 | 2012-03-01 | High-concentration active doping in semiconductors and semiconductor devices produced by such doping |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014522576A JP2014522576A (ja) | 2014-09-04 |
JP6121993B2 true JP6121993B2 (ja) | 2017-04-26 |
Family
ID=45937542
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014514454A Active JP6121993B2 (ja) | 2011-06-10 | 2012-03-01 | 半導体への高濃度活性ドーピングおよびこのようなドーピングにより生成される半導体装置 |
Country Status (4)
Country | Link |
---|---|
US (2) | US9692209B2 (ja) |
EP (1) | EP2718962A1 (ja) |
JP (1) | JP6121993B2 (ja) |
WO (1) | WO2012170087A1 (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3266079B1 (fr) | 2015-03-06 | 2020-07-08 | STMicroeletronics Crolles 2 SAS | Laser germanium sur silicium en technologie cmos |
DE102015107085A1 (de) * | 2015-05-06 | 2016-11-10 | Infineon Technologies Ag | Verfahren zum Herstellen von Halbleitervorrichtungen und Sauerstoffkorrelierte thermische Donatoren enthaltende Halbleitervorrichtung |
SG11201802818VA (en) * | 2015-10-13 | 2018-05-30 | Univ Nanyang Tech | Method of manufacturing a germanium-on-insulator substrate |
JP6598630B2 (ja) | 2015-10-22 | 2019-10-30 | 株式会社Screenホールディングス | 熱処理方法 |
US10043666B2 (en) * | 2016-02-26 | 2018-08-07 | Applied Materials, Inc. | Method for inter-chamber process |
US11522098B2 (en) * | 2016-04-01 | 2022-12-06 | Trustees Of Dartmouth College | UV/VIS/IR backside-illuminated photon-counting sensor |
US10541136B2 (en) * | 2016-11-29 | 2020-01-21 | President And Fellows Of Harvard College | N-type doping of strained epitaxial germanium films through co-implantation and nanosecond pulsed laser melting |
US10522354B2 (en) * | 2017-06-08 | 2019-12-31 | Lam Research Corporation | Antimony co-doping with phosphorus to form ultrashallow junctions using atomic layer deposition and annealing |
US10884278B2 (en) * | 2017-10-24 | 2021-01-05 | Palo Alto Research Center Incorporated | Liquid crystal temperature control by resistive heating |
US10964835B2 (en) * | 2018-08-29 | 2021-03-30 | The Boeing Company | Universal broadband photodetector design and fabrication process |
US10342110B1 (en) * | 2018-09-14 | 2019-07-02 | Serendipity Technologies LLC. | Plasma power generator (z-box and z-tower) |
US10937654B2 (en) | 2019-01-24 | 2021-03-02 | Micron Technology, Inc. | Methods of doping a silicon-containing material and methods of forming a semiconductor device |
CN115117198A (zh) * | 2022-05-16 | 2022-09-27 | 上海交通大学 | 一种δ掺杂层制备方法及电子器件 |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US34509A (en) * | 1862-02-25 | Improved shot-hole stopper | ||
DE1544273A1 (de) | 1965-12-13 | 1969-09-04 | Siemens Ag | Verfahren zum Eindiffundieren von aus der Gasphase dargebotenem Dotierungsmaterial in einen Halbleitergrundkristall |
US4392297A (en) * | 1980-11-20 | 1983-07-12 | Spire Corporation | Process of making thin film high efficiency solar cells |
US4593307A (en) * | 1983-06-30 | 1986-06-03 | International Business Machines Corporation | High temperature stable ohmic contact to gallium arsenide |
JPH0783028B2 (ja) | 1986-06-02 | 1995-09-06 | 株式会社日立製作所 | 半導体装置及び製造方法 |
JP3023982B2 (ja) | 1990-11-30 | 2000-03-21 | 東京エレクトロン株式会社 | 成膜方法 |
US5332689A (en) * | 1993-02-17 | 1994-07-26 | Micron Technology, Inc. | Method for depositing low bulk resistivity doped films |
US6723621B1 (en) | 1997-06-30 | 2004-04-20 | International Business Machines Corporation | Abrupt delta-like doping in Si and SiGe films by UHV-CVD |
US6599781B1 (en) * | 2000-09-27 | 2003-07-29 | Chou H. Li | Solid state device |
KR20050032527A (ko) | 2002-06-19 | 2005-04-07 | 메사추세츠 인스티튜트 오브 테크놀로지 | 게르마늄 광검출기 |
US6987037B2 (en) * | 2003-05-07 | 2006-01-17 | Micron Technology, Inc. | Strained Si/SiGe structures by ion implantation |
EP2230684B1 (de) * | 2003-07-08 | 2013-10-30 | Infineon Technologies AG | Herstellungsverfahren für integrierte Schaltungsanordnung mit niederohmigen Kontakten |
US7294848B2 (en) * | 2005-05-26 | 2007-11-13 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Light-emitting Group IV semiconductor devices |
WO2006132659A2 (en) * | 2005-06-06 | 2006-12-14 | President And Fellows Of Harvard College | Nanowire heterostructures |
EP1952495B1 (en) * | 2005-10-28 | 2017-12-06 | Massachusetts Institute of Technology (MIT) | Method and structure of germanium laser on silicon |
US7596158B2 (en) | 2005-10-28 | 2009-09-29 | Massachusetts Institute Of Technology | Method and structure of germanium laser on silicon |
JP5003013B2 (ja) * | 2006-04-25 | 2012-08-15 | 株式会社日立製作所 | シリコン発光ダイオード、シリコン光トランジスタ、シリコンレーザー及びそれらの製造方法。 |
US8278176B2 (en) * | 2006-06-07 | 2012-10-02 | Asm America, Inc. | Selective epitaxial formation of semiconductor films |
JP2009054873A (ja) * | 2007-08-28 | 2009-03-12 | Toshiba Corp | 発光素子 |
JP5117156B2 (ja) * | 2007-10-05 | 2013-01-09 | 株式会社日立製作所 | 半導体装置 |
JP5468011B2 (ja) * | 2008-11-12 | 2014-04-09 | 株式会社日立製作所 | 発光素子並びに受光素子及びその製造方法 |
EP2202784B1 (en) * | 2008-12-29 | 2017-10-25 | Imec | Method for manufacturing a junction |
TW201213599A (en) * | 2010-07-02 | 2012-04-01 | Matheson Tri Gas Inc | Thin films and methods of making them using cyclohexasilane |
JP2013531899A (ja) * | 2010-07-02 | 2013-08-08 | マシスン トライ−ガス インコーポレイテッド | Si−含有材料および置換的にドーピングされた結晶性si−含有材料の選択エピタキシー |
EP2461352B1 (en) * | 2010-12-06 | 2013-07-10 | Imec | Method of manufacturing low resistivity contacts on n-type germanium |
US9202693B2 (en) * | 2013-01-28 | 2015-12-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Fabrication of ultra-shallow junctions |
-
2012
- 2012-03-01 EP EP12713417.9A patent/EP2718962A1/en not_active Withdrawn
- 2012-03-01 WO PCT/US2012/027350 patent/WO2012170087A1/en active Application Filing
- 2012-03-01 JP JP2014514454A patent/JP6121993B2/ja active Active
- 2012-03-01 US US14/124,004 patent/US9692209B2/en active Active
-
2017
- 2017-05-01 US US15/582,938 patent/US10680413B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US10680413B2 (en) | 2020-06-09 |
US20180198256A1 (en) | 2018-07-12 |
US9692209B2 (en) | 2017-06-27 |
EP2718962A1 (en) | 2014-04-16 |
JP2014522576A (ja) | 2014-09-04 |
US20140254620A1 (en) | 2014-09-11 |
WO2012170087A1 (en) | 2012-12-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6121993B2 (ja) | 半導体への高濃度活性ドーピングおよびこのようなドーピングにより生成される半導体装置 | |
US7736919B2 (en) | Method of producing a light-emitting diode comprising a nanostructured PN junction and diode thus obtained | |
US20120025212A1 (en) | GeSn Infrared Photodetectors | |
JP4794558B2 (ja) | 横型半導体デバイスを製作する方法 | |
TWI398061B (zh) | Semiconductor device | |
TW201125162A (en) | Photonic device and method of making the same | |
JP2011142293A (ja) | ダイオードベースのデバイスとその製造方法 | |
JP2013030798A (ja) | 多接合太陽電池 | |
US20100072518A1 (en) | Semiconductor devices and methods of fabricating same | |
US8842710B2 (en) | Process for producing semiconductor device and semiconductor device | |
TW200541187A (en) | Method for processing oxide-confined VCSEL semiconductor devices | |
Camacho-Aguilera | Ge-on-Si laser for silicon photonics | |
KR102012506B1 (ko) | Ge 디바이스 및 SiGe 디바이스에서의 품질 개선을 위한 유전체 측벽 구조체 | |
US9917171B2 (en) | Low-resistive, CMOS-compatible, Au-free ohmic contact to N—InP | |
EP3509087B1 (en) | Method for producing semiconductor crystal substrate, and method for producing infrared detection device | |
Li et al. | Monolithic integration of GaAs/InGaAs lasers on virtual Ge substrates via aspect-ratio trapping | |
US10263393B2 (en) | Vertical-cavity surface-emitting device with epitaxial index guide | |
JP6984571B2 (ja) | 半導体装置の製造方法 | |
CN110061416B (zh) | 半导体激光器非吸收窗口及其制备方法和半导体激光器 | |
JP6228873B2 (ja) | 半導体光素子の製造方法 | |
JP2012119567A (ja) | 半導体ウエハの製造方法、半導体装置の製造方法およびセンサアレイの製造方法 | |
EP1508163B1 (en) | Control of contact resistance in quantum well intermixed devices | |
Sobolev et al. | Silicon LEDs with room-temperature dislocation-related luminescence, fabricated by erbium ion implantation and chemical-vapor deposition of polycrystalline silicon layers heavily doped with boron and phosphorus | |
Koscica et al. | Impact of Pocket Geometry on Quantum Dot Lasers Grown on Silicon Wafers | |
CN116137298A (zh) | 包括基于SiGe/Ge的外围中间部分的减小暗电流的锗光电二极管 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150310 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150526 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20151110 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160202 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20160719 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20161117 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20161212 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170207 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170303 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20170314 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20170330 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6121993 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |