JP6116616B2 - 裏面電極型太陽電池及びその製造方法 - Google Patents
裏面電極型太陽電池及びその製造方法 Download PDFInfo
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- JP6116616B2 JP6116616B2 JP2015108030A JP2015108030A JP6116616B2 JP 6116616 B2 JP6116616 B2 JP 6116616B2 JP 2015108030 A JP2015108030 A JP 2015108030A JP 2015108030 A JP2015108030 A JP 2015108030A JP 6116616 B2 JP6116616 B2 JP 6116616B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 133
- 229910052710 silicon Inorganic materials 0.000 claims description 133
- 239000010703 silicon Substances 0.000 claims description 133
- 239000000758 substrate Substances 0.000 claims description 133
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 132
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 132
- 238000002161 passivation Methods 0.000 claims description 90
- 238000005530 etching Methods 0.000 claims description 48
- 238000000034 method Methods 0.000 claims description 34
- 239000002019 doping agent Substances 0.000 claims description 15
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 10
- 230000001590 oxidative effect Effects 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 description 40
- 229910052581 Si3N4 Inorganic materials 0.000 description 24
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 24
- 238000005229 chemical vapour deposition Methods 0.000 description 17
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 16
- 229910052796 boron Inorganic materials 0.000 description 16
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 14
- 229910052698 phosphorus Inorganic materials 0.000 description 14
- 239000011574 phosphorus Substances 0.000 description 14
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 12
- 238000010586 diagram Methods 0.000 description 12
- 238000010438 heat treatment Methods 0.000 description 11
- 239000012535 impurity Substances 0.000 description 11
- 238000000059 patterning Methods 0.000 description 11
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 10
- 238000007650 screen-printing Methods 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 238000010306 acid treatment Methods 0.000 description 6
- 239000002562 thickening agent Substances 0.000 description 6
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 5
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 5
- LDDQLRUQCUTJBB-UHFFFAOYSA-O azanium;hydrofluoride Chemical compound [NH4+].F LDDQLRUQCUTJBB-UHFFFAOYSA-O 0.000 description 5
- 239000003960 organic solvent Substances 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000007639 printing Methods 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 239000012808 vapor phase Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000005368 silicate glass Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000004506 ultrasonic cleaning Methods 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001639 boron compounds Chemical class 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
Images
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Description
Claims (3)
- シリコン基板の裏面の一部に、第1の酸化シリコン膜をマスクに用いて、n型ドーパントを拡散させてn型領域を形成する工程と、
前記第1の酸化シリコン膜を除去する工程と、
前記シリコン基板の裏面を熱酸化して、該シリコン基板の裏面に第2の酸化シリコン膜を形成する工程と、
前記シリコン基板の裏面をエッチングして、前記n型領域上以外の第2の酸化シリコン膜を除去する工程と、
前記シリコン基板の裏面の前記n型領域以外の領域に、p型ドーパントを拡散させてp型領域を形成する工程と、
前記n型領域上に前記第2の酸化シリコン膜が形成された状態で、前記シリコン基板の裏面上に、酸化アルミニウム膜を形成する工程とを含む裏面電極型太陽電池の製造方法。 - シリコン基板の裏面の一部に、第1の酸化シリコン膜をマスクに用いて、n型ドーパントを拡散させてn型領域を形成する工程と、
前記第1の酸化シリコン膜を除去する工程と、
前記シリコン基板の裏面を熱酸化して、該シリコン基板の裏面に第2の酸化シリコン膜を形成する工程と、
前記シリコン基板の裏面をエッチングして、前記n型領域上以外の第2の酸化シリコン膜を除去する工程と、
前記シリコン基板の裏面の前記n型領域以外の領域に、p型ドーパントを拡散させてp型領域を形成する工程と、
前記n型領域上に前記第2の酸化シリコン膜が形成された状態で、前記シリコン基板の裏面上に、第2裏面パッシベーション膜を形成する工程とを含む裏面電極型太陽電池の製造方法。 - 前記p型領域を形成する工程では、前記n型領域上の第2の酸化シリコン膜をマスクとして用いてp型領域を形成し、
この後に、前記n型領域上の第2の酸化シリコン膜のp型ドーパントを含む部分を除去する請求項1または2に記載の裏面電極型太陽電池の製造方法。
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JP2015167260A JP2015167260A (ja) | 2015-09-24 |
JP6116616B2 true JP6116616B2 (ja) | 2017-04-19 |
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Families Citing this family (2)
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CN117352591A (zh) | 2016-10-25 | 2024-01-05 | 信越化学工业株式会社 | 太阳能电池的制造方法 |
CN109891604A (zh) | 2016-10-25 | 2019-06-14 | 信越化学工业株式会社 | 高光电变换效率太阳能电池及高光电变换效率太阳能电池的制造方法 |
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JP4767110B2 (ja) * | 2006-06-30 | 2011-09-07 | シャープ株式会社 | 太陽電池、および太陽電池の製造方法 |
KR101241617B1 (ko) * | 2006-12-01 | 2013-03-08 | 샤프 가부시키가이샤 | 태양 전지 및 그 제조 방법 |
JP2010232530A (ja) * | 2009-03-27 | 2010-10-14 | Sharp Corp | 光電変換素子の製造方法および光電変換素子 |
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