JP6107353B2 - 表面処理状況モニタリング装置 - Google Patents

表面処理状況モニタリング装置 Download PDF

Info

Publication number
JP6107353B2
JP6107353B2 JP2013084298A JP2013084298A JP6107353B2 JP 6107353 B2 JP6107353 B2 JP 6107353B2 JP 2013084298 A JP2013084298 A JP 2013084298A JP 2013084298 A JP2013084298 A JP 2013084298A JP 6107353 B2 JP6107353 B2 JP 6107353B2
Authority
JP
Japan
Prior art keywords
thickness
film thickness
film
estimated
index
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2013084298A
Other languages
English (en)
Japanese (ja)
Other versions
JP2014206467A (ja
JP2014206467A5 (https=
Inventor
塁 加藤
塁 加藤
雄三 南雲
雄三 南雲
洋臣 後藤
洋臣 後藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shimadzu Corp
Original Assignee
Shimadzu Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shimadzu Corp filed Critical Shimadzu Corp
Priority to JP2013084298A priority Critical patent/JP6107353B2/ja
Priority to US14/250,100 priority patent/US9460973B2/en
Publication of JP2014206467A publication Critical patent/JP2014206467A/ja
Publication of JP2014206467A5 publication Critical patent/JP2014206467A5/ja
Application granted granted Critical
Publication of JP6107353B2 publication Critical patent/JP6107353B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0625—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection
    • G01B11/0633—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection using one or more discrete wavelengths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972—Spectral analysis

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Drying Of Semiconductors (AREA)
  • Engineering & Computer Science (AREA)
  • Signal Processing (AREA)
JP2013084298A 2013-04-12 2013-04-12 表面処理状況モニタリング装置 Expired - Fee Related JP6107353B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2013084298A JP6107353B2 (ja) 2013-04-12 2013-04-12 表面処理状況モニタリング装置
US14/250,100 US9460973B2 (en) 2013-04-12 2014-04-10 Surface processing progress monitoring system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013084298A JP6107353B2 (ja) 2013-04-12 2013-04-12 表面処理状況モニタリング装置

Publications (3)

Publication Number Publication Date
JP2014206467A JP2014206467A (ja) 2014-10-30
JP2014206467A5 JP2014206467A5 (https=) 2016-06-02
JP6107353B2 true JP6107353B2 (ja) 2017-04-05

Family

ID=51686594

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013084298A Expired - Fee Related JP6107353B2 (ja) 2013-04-12 2013-04-12 表面処理状況モニタリング装置

Country Status (2)

Country Link
US (1) US9460973B2 (https=)
JP (1) JP6107353B2 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6544171B2 (ja) * 2015-09-16 2019-07-17 株式会社島津製作所 表面処理状況モニタリング装置
US10734340B2 (en) * 2018-05-15 2020-08-04 Camtek Ltd. Height measurements of conductive structural elements that are surrounded by a photoresist layer
CN114442435B (zh) * 2022-01-24 2024-06-28 芯达半导体设备(苏州)有限公司 一种光刻胶喷雾式涂胶薄膜厚度计算方法
CN116841126A (zh) * 2022-03-25 2023-10-03 台湾积体电路制造股份有限公司 光罩护膜检测方法及其系统
CN118335642B (zh) * 2024-06-14 2024-09-27 北京特思迪半导体设备有限公司 薄膜厚度确定方法及设备

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5333049A (en) * 1991-12-06 1994-07-26 Hughes Aircraft Company Apparatus and method for interferometrically measuring the thickness of thin films using full aperture irradiation
US5555472A (en) * 1993-12-22 1996-09-10 Integrated Process Equipment Corp. Method and apparatus for measuring film thickness in multilayer thin film stack by comparison to a reference library of theoretical signatures
US5729343A (en) * 1995-11-16 1998-03-17 Nikon Precision Inc. Film thickness measurement apparatus with tilting stage and method of operation
US5982496A (en) * 1996-03-11 1999-11-09 Vlsi Technology, Inc. Thin film thickness and optimal focus measuring using reflectivity
US5717490A (en) * 1996-10-17 1998-02-10 Lsi Logic Corporation Method for identifying order skipping in spectroreflective film measurement equipment
JPH10325708A (ja) * 1997-03-27 1998-12-08 Toshiba Corp エッチング深さ測定方法及びその装置
US5798837A (en) * 1997-07-11 1998-08-25 Therma-Wave, Inc. Thin film optical measurement system and method with calibrating ellipsometer
EP1111333A4 (en) * 1999-06-29 2002-08-28 Omron Tateisi Electronics Co LIGHT SOURCE DEVICE, SPECTROSCOPE COMPRISING THE LIGHT SOURCE DEVICE AND LAYER THICKNESS SENSOR
ATE396497T1 (de) * 2000-01-21 2008-06-15 Hamamatsu Photonics Kk Dickenmessvorrichtung, dickenmessverfahren und nassätzvorrichtung und nassätzverfahren, die diese verwenden
JP3946470B2 (ja) * 2001-03-12 2007-07-18 株式会社デンソー 半導体層の膜厚測定方法及び半導体基板の製造方法
US6972848B2 (en) * 2003-03-04 2005-12-06 Hitach High-Technologies Corporation Semiconductor fabricating apparatus with function of determining etching processing state
EP1611411A2 (en) * 2003-03-26 2006-01-04 Southwest Sciences Incorporated Method and apparatus for imaging internal structures of transparent and translucent materials
US6999180B1 (en) * 2003-04-02 2006-02-14 Kla-Tencor Technologies Corporation Optical film topography and thickness measurement
EP1962080B1 (de) * 2007-02-21 2011-06-01 Agfa HealthCare N.V. System zur optischen Kohärenztomographie
JP5387450B2 (ja) * 2010-03-04 2014-01-15 信越半導体株式会社 Ｓｏｉウェーハの設計方法及び製造方法
GB2478590A (en) * 2010-03-12 2011-09-14 Precitec Optronik Gmbh Apparatus and method for monitoring a thickness of a silicon wafer
US8954186B2 (en) * 2010-07-30 2015-02-10 Applied Materials, Inc. Selecting reference libraries for monitoring of multiple zones on a substrate
JP2013048183A (ja) * 2011-08-29 2013-03-07 Shimadzu Corp エッチングモニタリング装置

Also Published As

Publication number Publication date
JP2014206467A (ja) 2014-10-30
US20140307262A1 (en) 2014-10-16
US9460973B2 (en) 2016-10-04

Similar Documents

Publication Publication Date Title
JP6107353B2 (ja) 表面処理状況モニタリング装置
EP1111356B1 (en) Method and apparatus for processing semiconductor substrates
KR101614977B1 (ko) 막 두께 측정 장치 및 측정 방법
JP5519688B2 (ja) 膜厚測定装置および膜厚測定方法
JP5992570B2 (ja) 研磨監視方法、研磨監視装置、および研磨装置
TWI497044B (zh) 溫度測定方法及記憶媒體
KR101656436B1 (ko) 박막 웨이퍼의 막두께 분포 측정 방법
TWI575104B (zh) 用於在電漿沉積過程中測定薄膜之厚度的方法
JP2016080668A (ja) 表面処理状況モニタリング装置及び表面処理状況モニタリング方法
CN111121653B (zh) 一种单层薄膜临界厚度估值计算方法
JP5862433B2 (ja) 表面処理状況モニタリング装置
JP2013195290A (ja) 光学的距離測定装置
JP2003083720A (ja) 半導体素子製造プロセスにおける膜の処理量測定方法と装置、及びそれを用いた被処理材の処理方法と装置、及びそれを用いたプロセスの終点判定方法と装置
JP2014206467A5 (https=)
US8699021B2 (en) System, method and computer readable medium for through silicon via structure measurement
JP2013120063A (ja) 表面処理状況モニタリング装置
US9228828B2 (en) Thickness monitoring device, etching depth monitoring device and thickness monitoring method
JP6544171B2 (ja) 表面処理状況モニタリング装置
JP2013242192A (ja) エッチングモニタ装置
JP2013048183A (ja) エッチングモニタリング装置
JP2015137909A (ja) エッチングモニタ装置
JP7848272B2 (ja) 半導体デバイス製造方法
JP2003279324A (ja) 膜厚測定方法および膜厚測定装置
TW517306B (en) Method and device to determine the end point of semiconductor device processing and the processing method and device of the processed material using the method
JP2016114506A (ja) 薄膜付ウェーハの評価方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160329

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20160329

TRDD Decision of grant or rejection written
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20170131

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20170207

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20170220

R151 Written notification of patent or utility model registration

Ref document number: 6107353

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151

LAPS Cancellation because of no payment of annual fees