JP6104832B2 - 発光素子組立体及びその製造方法、並びに、表示装置 - Google Patents

発光素子組立体及びその製造方法、並びに、表示装置 Download PDF

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Publication number
JP6104832B2
JP6104832B2 JP2014045009A JP2014045009A JP6104832B2 JP 6104832 B2 JP6104832 B2 JP 6104832B2 JP 2014045009 A JP2014045009 A JP 2014045009A JP 2014045009 A JP2014045009 A JP 2014045009A JP 6104832 B2 JP6104832 B2 JP 6104832B2
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Japan
Prior art keywords
light emitting
emitting element
mold
pad
light
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Expired - Fee Related
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JP2014045009A
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English (en)
Japanese (ja)
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JP2014209580A (ja
JP2014209580A5 (OSRAM
Inventor
直樹 平尾
直樹 平尾
洋行 細野
洋行 細野
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Sony Semiconductor Solutions Corp
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Sony Semiconductor Solutions Corp
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Priority to JP2014045009A priority Critical patent/JP6104832B2/ja
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Publication of JP2014209580A5 publication Critical patent/JP2014209580A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/093—Connecting or disconnecting other interconnections thereto or therefrom, e.g. connecting bond wires or bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink

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  • Led Device Packages (AREA)
  • Semiconductor Lasers (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
JP2014045009A 2013-03-25 2014-03-07 発光素子組立体及びその製造方法、並びに、表示装置 Expired - Fee Related JP6104832B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2014045009A JP6104832B2 (ja) 2013-03-25 2014-03-07 発光素子組立体及びその製造方法、並びに、表示装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013061433 2013-03-25
JP2013061433 2013-03-25
JP2014045009A JP6104832B2 (ja) 2013-03-25 2014-03-07 発光素子組立体及びその製造方法、並びに、表示装置

Publications (3)

Publication Number Publication Date
JP2014209580A JP2014209580A (ja) 2014-11-06
JP2014209580A5 JP2014209580A5 (OSRAM) 2016-03-31
JP6104832B2 true JP6104832B2 (ja) 2017-03-29

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JP2014045009A Expired - Fee Related JP6104832B2 (ja) 2013-03-25 2014-03-07 発光素子組立体及びその製造方法、並びに、表示装置

Country Status (2)

Country Link
US (1) US9312461B2 (OSRAM)
JP (1) JP6104832B2 (OSRAM)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102016101652A1 (de) * 2016-01-29 2017-08-03 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement mit Seitenkontakten
JP7328560B2 (ja) 2019-12-24 2023-08-17 日亜化学工業株式会社 発光装置の製造方法および発光装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4066620B2 (ja) * 2000-07-21 2008-03-26 日亜化学工業株式会社 発光素子、および発光素子を配置した表示装置ならびに表示装置の製造方法
JP4082242B2 (ja) 2003-03-06 2008-04-30 ソニー株式会社 素子転写方法
JP4673610B2 (ja) * 2004-11-25 2011-04-20 シチズン電子株式会社 表面実装型発光ダイオード
JP5692952B2 (ja) * 2007-12-11 2015-04-01 シチズン電子株式会社 発光ダイオード
US20090284932A1 (en) * 2008-03-25 2009-11-19 Bridge Semiconductor Corporation Thermally Enhanced Package with Embedded Metal Slug and Patterned Circuitry
JP2010087224A (ja) * 2008-09-30 2010-04-15 Toyoda Gosei Co Ltd Led表示装置およびled表示装置用隔壁の製造方法
JP5482293B2 (ja) * 2009-03-05 2014-05-07 日亜化学工業株式会社 光半導体装置及びその製造方法
JP5691681B2 (ja) * 2010-03-15 2015-04-01 日亜化学工業株式会社 発光装置
JP2011253970A (ja) * 2010-06-03 2011-12-15 Panasonic Corp 光半導体装置用パッケージおよびその製造方法
US8652860B2 (en) * 2011-01-09 2014-02-18 Bridgelux, Inc. Packaging photon building blocks having only top side connections in a molded interconnect structure

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Publication number Publication date
JP2014209580A (ja) 2014-11-06
US9312461B2 (en) 2016-04-12
US20140284634A1 (en) 2014-09-25

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