JP6088780B2 - プラズマ処理方法及びプラズマ処理装置 - Google Patents

プラズマ処理方法及びプラズマ処理装置 Download PDF

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JP6088780B2
JP6088780B2 JP2012220249A JP2012220249A JP6088780B2 JP 6088780 B2 JP6088780 B2 JP 6088780B2 JP 2012220249 A JP2012220249 A JP 2012220249A JP 2012220249 A JP2012220249 A JP 2012220249A JP 6088780 B2 JP6088780 B2 JP 6088780B2
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plasma processing
plasma
base
plate
processing
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JP2014070275A (ja
JP2014070275A5 (enExample
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藤井　佳詞
佳詞 藤井
中村　真也
真也 中村
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Ulvac Inc
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Ulvac Inc
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JP2012220249A 2012-10-02 2012-10-02 プラズマ処理方法及びプラズマ処理装置 Active JP6088780B2 (ja)

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JP2012220249A JP6088780B2 (ja) 2012-10-02 2012-10-02 プラズマ処理方法及びプラズマ処理装置

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JP2012220249A JP6088780B2 (ja) 2012-10-02 2012-10-02 プラズマ処理方法及びプラズマ処理装置

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JP2014070275A JP2014070275A (ja) 2014-04-21
JP2014070275A5 JP2014070275A5 (enExample) 2015-10-01
JP6088780B2 true JP6088780B2 (ja) 2017-03-01

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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6357436B2 (ja) * 2014-07-25 2018-07-11 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP6518505B2 (ja) * 2015-05-12 2019-05-22 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP2018127711A (ja) * 2017-02-10 2018-08-16 株式会社アルバック スパッタリング装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4351755B2 (ja) * 1999-03-12 2009-10-28 キヤノンアネルバ株式会社 薄膜作成方法および薄膜作成装置
JP2002203837A (ja) * 2000-12-28 2002-07-19 Mitsubishi Electric Corp プラズマ処理方法および装置並びに半導体装置の製造方法
JP4112821B2 (ja) * 2001-06-01 2008-07-02 松下電器産業株式会社 プラズマ処理方法およびプラズマ処理装置
JP4336320B2 (ja) * 2005-02-25 2009-09-30 キヤノンアネルバ株式会社 ウエハホルダ
JP4317888B2 (ja) * 2007-08-31 2009-08-19 富士フイルム株式会社 スパッタ方法およびスパッタ装置
JP2011058085A (ja) * 2009-09-14 2011-03-24 Central Glass Co Ltd セラミック積層膜及び該セラミック積層膜の形成方法

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