JP6088253B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

Info

Publication number
JP6088253B2
JP6088253B2 JP2013005091A JP2013005091A JP6088253B2 JP 6088253 B2 JP6088253 B2 JP 6088253B2 JP 2013005091 A JP2013005091 A JP 2013005091A JP 2013005091 A JP2013005091 A JP 2013005091A JP 6088253 B2 JP6088253 B2 JP 6088253B2
Authority
JP
Japan
Prior art keywords
transistor
layer
circuit
channel
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2013005091A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013175708A (ja
JP2013175708A5 (https=
Inventor
拓郎 王丸
拓郎 王丸
塩野入　豊
豊 塩野入
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2013005091A priority Critical patent/JP6088253B2/ja
Publication of JP2013175708A publication Critical patent/JP2013175708A/ja
Publication of JP2013175708A5 publication Critical patent/JP2013175708A5/ja
Application granted granted Critical
Publication of JP6088253B2 publication Critical patent/JP6088253B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2013005091A 2012-01-23 2013-01-16 半導体装置 Expired - Fee Related JP6088253B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013005091A JP6088253B2 (ja) 2012-01-23 2013-01-16 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012011147 2012-01-23
JP2012011147 2012-01-23
JP2013005091A JP6088253B2 (ja) 2012-01-23 2013-01-16 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2017018218A Division JP6391728B2 (ja) 2012-01-23 2017-02-03 半導体装置

Publications (3)

Publication Number Publication Date
JP2013175708A JP2013175708A (ja) 2013-09-05
JP2013175708A5 JP2013175708A5 (https=) 2016-02-18
JP6088253B2 true JP6088253B2 (ja) 2017-03-01

Family

ID=49268334

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2013005091A Expired - Fee Related JP6088253B2 (ja) 2012-01-23 2013-01-16 半導体装置
JP2017018218A Expired - Fee Related JP6391728B2 (ja) 2012-01-23 2017-02-03 半導体装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2017018218A Expired - Fee Related JP6391728B2 (ja) 2012-01-23 2017-02-03 半導体装置

Country Status (1)

Country Link
JP (2) JP6088253B2 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015136427A1 (ja) * 2014-03-14 2015-09-17 株式会社半導体エネルギー研究所 半導体装置
TWI646782B (zh) 2014-04-11 2019-01-01 日商半導體能源研究所股份有限公司 保持電路、保持電路的驅動方法以及包括保持電路的半導體裝置
KR20240161234A (ko) 2014-10-10 2024-11-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 논리 회로, 처리 유닛, 전자 부품, 전자 기기, 및 반도체 장치
US10177142B2 (en) 2015-12-25 2019-01-08 Semiconductor Energy Laboratory Co., Ltd. Circuit, logic circuit, processor, electronic component, and electronic device
CN108767967B (zh) * 2018-05-04 2020-04-03 新华三技术有限公司 一种通信设备、电源模块及其处理方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60130160A (ja) * 1983-12-19 1985-07-11 Hitachi Ltd 半導体記憶装置
JP2647045B2 (ja) * 1995-02-28 1997-08-27 日本電気株式会社 半導体記憶装置及びその製造方法
JP5430846B2 (ja) * 2007-12-03 2014-03-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5781720B2 (ja) * 2008-12-15 2015-09-24 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
KR102293198B1 (ko) * 2009-09-16 2021-08-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
WO2011070905A1 (en) * 2009-12-11 2011-06-16 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile latch circuit and logic circuit, and semiconductor device using the same
WO2011089847A1 (en) * 2010-01-20 2011-07-28 Semiconductor Energy Laboratory Co., Ltd. Signal processing circuit and method for driving the same
WO2011111505A1 (en) * 2010-03-08 2011-09-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
JP5727832B2 (ja) * 2010-03-31 2015-06-03 株式会社半導体エネルギー研究所 トランジスタ

Also Published As

Publication number Publication date
JP6391728B2 (ja) 2018-09-19
JP2017118126A (ja) 2017-06-29
JP2013175708A (ja) 2013-09-05

Similar Documents

Publication Publication Date Title
JP6368155B2 (ja) プログラマブルロジックデバイス
CN104321967B (zh) 可编程逻辑装置及半导体装置
JP6661244B2 (ja) 半導体装置
JP6722986B2 (ja) 半導体装置
JP6391728B2 (ja) 半導体装置
JP6272713B2 (ja) プログラマブルロジックデバイス及び半導体装置
JP6815459B2 (ja) 半導体装置
JP2014199709A (ja) 記憶装置、半導体装置
US9935617B2 (en) Semiconductor device
US9722615B2 (en) Method for operating programmable logic device
JP7167219B2 (ja) 半導体装置及び電子機器
JP2019213202A (ja) 半導体装置
JP6382044B2 (ja) 半導体装置
JP6333589B2 (ja) 半導体装置
JP6122709B2 (ja) 信号処理回路
JP6653997B2 (ja) 表示補正回路及び表示装置
JP6640953B2 (ja) 半導体装置
US9343120B2 (en) High speed processing unit with non-volatile register
JP6207178B2 (ja) 半導体装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20151221

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20151221

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20160927

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20160930

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20161115

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20170110

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20170203

R150 Certificate of patent or registration of utility model

Ref document number: 6088253

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees