JP2013175708A5 - - Google Patents

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Publication number
JP2013175708A5
JP2013175708A5 JP2013005091A JP2013005091A JP2013175708A5 JP 2013175708 A5 JP2013175708 A5 JP 2013175708A5 JP 2013005091 A JP2013005091 A JP 2013005091A JP 2013005091 A JP2013005091 A JP 2013005091A JP 2013175708 A5 JP2013175708 A5 JP 2013175708A5
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JP
Japan
Prior art keywords
transistor
layer
capacitor
semiconductor
insulating layer
Prior art date
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Granted
Application number
JP2013005091A
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English (en)
Japanese (ja)
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JP6088253B2 (ja
JP2013175708A (ja
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Priority to JP2013005091A priority Critical patent/JP6088253B2/ja
Priority claimed from JP2013005091A external-priority patent/JP6088253B2/ja
Publication of JP2013175708A publication Critical patent/JP2013175708A/ja
Publication of JP2013175708A5 publication Critical patent/JP2013175708A5/ja
Application granted granted Critical
Publication of JP6088253B2 publication Critical patent/JP6088253B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2013005091A 2012-01-23 2013-01-16 半導体装置 Expired - Fee Related JP6088253B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013005091A JP6088253B2 (ja) 2012-01-23 2013-01-16 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012011147 2012-01-23
JP2012011147 2012-01-23
JP2013005091A JP6088253B2 (ja) 2012-01-23 2013-01-16 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2017018218A Division JP6391728B2 (ja) 2012-01-23 2017-02-03 半導体装置

Publications (3)

Publication Number Publication Date
JP2013175708A JP2013175708A (ja) 2013-09-05
JP2013175708A5 true JP2013175708A5 (https=) 2016-02-18
JP6088253B2 JP6088253B2 (ja) 2017-03-01

Family

ID=49268334

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2013005091A Expired - Fee Related JP6088253B2 (ja) 2012-01-23 2013-01-16 半導体装置
JP2017018218A Expired - Fee Related JP6391728B2 (ja) 2012-01-23 2017-02-03 半導体装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2017018218A Expired - Fee Related JP6391728B2 (ja) 2012-01-23 2017-02-03 半導体装置

Country Status (1)

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JP (2) JP6088253B2 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015136427A1 (ja) * 2014-03-14 2015-09-17 株式会社半導体エネルギー研究所 半導体装置
TWI646782B (zh) 2014-04-11 2019-01-01 日商半導體能源研究所股份有限公司 保持電路、保持電路的驅動方法以及包括保持電路的半導體裝置
KR20240161234A (ko) 2014-10-10 2024-11-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 논리 회로, 처리 유닛, 전자 부품, 전자 기기, 및 반도체 장치
US10177142B2 (en) 2015-12-25 2019-01-08 Semiconductor Energy Laboratory Co., Ltd. Circuit, logic circuit, processor, electronic component, and electronic device
CN108767967B (zh) * 2018-05-04 2020-04-03 新华三技术有限公司 一种通信设备、电源模块及其处理方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60130160A (ja) * 1983-12-19 1985-07-11 Hitachi Ltd 半導体記憶装置
JP2647045B2 (ja) * 1995-02-28 1997-08-27 日本電気株式会社 半導体記憶装置及びその製造方法
JP5430846B2 (ja) * 2007-12-03 2014-03-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5781720B2 (ja) * 2008-12-15 2015-09-24 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
KR102293198B1 (ko) * 2009-09-16 2021-08-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
WO2011070905A1 (en) * 2009-12-11 2011-06-16 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile latch circuit and logic circuit, and semiconductor device using the same
WO2011089847A1 (en) * 2010-01-20 2011-07-28 Semiconductor Energy Laboratory Co., Ltd. Signal processing circuit and method for driving the same
WO2011111505A1 (en) * 2010-03-08 2011-09-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
JP5727832B2 (ja) * 2010-03-31 2015-06-03 株式会社半導体エネルギー研究所 トランジスタ

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