JP6087923B2 - ゾーン処理を用いてレーザー結晶内のドーパントプロファイルを調節する方法 - Google Patents

ゾーン処理を用いてレーザー結晶内のドーパントプロファイルを調節する方法 Download PDF

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JP6087923B2
JP6087923B2 JP2014526220A JP2014526220A JP6087923B2 JP 6087923 B2 JP6087923 B2 JP 6087923B2 JP 2014526220 A JP2014526220 A JP 2014526220A JP 2014526220 A JP2014526220 A JP 2014526220A JP 6087923 B2 JP6087923 B2 JP 6087923B2
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ingot
crystal
dopant
heating element
laser
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JP2014529566A5 (https=
JP2014529566A (ja
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ダブリュ バイレン，ロバート
ダブリュ バイレン，ロバート
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Raytheon Co
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Raytheon Co
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/22—Heating of the molten zone by irradiation or electric discharge
    • C30B13/24—Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/12—Halides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/0602—Crystal lasers or glass lasers
    • H01S3/0617—Crystal lasers or glass lasers having a varying composition or cross-section in a specific direction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1601—Solid materials characterised by an active (lasing) ion
    • H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
    • H01S3/1611—Solid materials characterised by an active (lasing) ion rare earth neodymium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/163—Solid materials characterised by a crystal matrix
    • H01S3/164—Solid materials characterised by a crystal matrix garnet
    • H01S3/1643—YAG

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Lasers (AREA)
JP2014526220A 2011-08-16 2012-08-16 ゾーン処理を用いてレーザー結晶内のドーパントプロファイルを調節する方法 Active JP6087923B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/210,786 2011-08-16
US13/210,786 US20130044779A1 (en) 2011-08-16 2011-08-16 Method for tailoring the dopant profile in a laser crystal using zone processing
PCT/US2012/051189 WO2013025926A1 (en) 2011-08-16 2012-08-16 Method for tailoring the dopant profile in a laser crystal using zone processing

Publications (3)

Publication Number Publication Date
JP2014529566A JP2014529566A (ja) 2014-11-13
JP2014529566A5 JP2014529566A5 (https=) 2015-06-18
JP6087923B2 true JP6087923B2 (ja) 2017-03-01

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JP2014526220A Active JP6087923B2 (ja) 2011-08-16 2012-08-16 ゾーン処理を用いてレーザー結晶内のドーパントプロファイルを調節する方法

Country Status (5)

Country Link
US (3) US20130044779A1 (https=)
EP (1) EP2744930B1 (https=)
JP (1) JP6087923B2 (https=)
IL (1) IL230316A (https=)
WO (1) WO2013025926A1 (https=)

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* Cited by examiner, † Cited by third party
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CN103436966B (zh) * 2013-08-13 2016-05-04 安徽环巢光电科技有限公司 熔盐法键合掺杂或纯钇铝石榴石与掺杂钇铝石榴石晶体的方法
US9726820B2 (en) * 2014-08-14 2017-08-08 Raytheon Company End pumped PWG with tapered core thickness
RU2591253C1 (ru) * 2015-04-30 2016-07-20 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Кубанский государственный университет" (ФГБОУ ВПО "КубГУ") Монокристаллический материал с неоднородным распределением оптических примесей для активного лазерного элемента
CZ306311B6 (cs) * 2015-07-16 2016-11-23 Fyzikální Ústav Av Čr, V. V. I. Optické elementy pro konstrukci výkonových laserových systémů a jejich příprava
JP6502285B2 (ja) * 2016-04-28 2019-04-17 日本電信電話株式会社 単結晶ファイバの製造方法
US10840668B2 (en) 2016-06-17 2020-11-17 Lawrence Livermore National Security, Llc Laser gain media fabricated via direct ink writing (DIW) and ceramic processing
CN106329301A (zh) * 2016-11-09 2017-01-11 上海卫星工程研究所 纳米阶梯掺杂结构的阳光泵浦激光工作晶体的制备方法
US20220140206A1 (en) * 2019-03-27 2022-05-05 Tdk Corporation Phosphor and light irradiation device
CN113463195B (zh) * 2021-07-09 2022-09-02 中国电子科技集团公司第二十六研究所 一种生长梯度掺杂Yb: YAG单晶的方法
US20230110835A1 (en) * 2021-10-12 2023-04-13 Lawrence Livermore National Security, Llc Transparent ceramics fabricated by material jet printing
DE102023108160A1 (de) * 2023-03-30 2024-10-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein Verfahren zur Herstellung eines einkristallinen Körpers durch Festkörper-Umkristallisation

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US3108073A (en) * 1961-10-26 1963-10-22 Grace W R & Co Process for doping semiconductive bodies
US3671330A (en) * 1970-10-21 1972-06-20 Gen Electric Removal of acceptor impurities from high purity germanium
US4040890A (en) * 1975-06-27 1977-08-09 Bell Telephone Laboratories, Incorporated Neodymium oxide doped yttrium aluminum garnet optical fiber
US4186046A (en) * 1976-09-29 1980-01-29 The United States Of America As Represented By The Secretary Of The Army Growing doped single crystal ceramic materials
EP0450494B1 (en) * 1990-03-30 1996-06-19 Sumitomo Sitix Corporation Manufacturing method for single-crystal silicon
US5114528A (en) * 1990-08-07 1992-05-19 Wisconsin Alumni Research Foundation Edge-defined contact heater apparatus and method for floating zone crystal growth
US5321711A (en) * 1992-08-17 1994-06-14 Alliedsignal Inc. Segmented solid state laser gain media with gradient doping level
JP2922078B2 (ja) * 1993-03-17 1999-07-19 株式会社トクヤマ シリコンロッドの製造方法
JP3443639B2 (ja) * 2000-01-27 2003-09-08 独立行政法人産業技術総合研究所 傾斜型機能物質および製造方法
JP4161051B2 (ja) * 2003-06-16 2008-10-08 独立行政法人産業技術総合研究所 傾斜材料の製造方法
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Also Published As

Publication number Publication date
IL230316A (en) 2016-06-30
EP2744930B1 (en) 2017-01-11
US9926644B2 (en) 2018-03-27
US20180245236A1 (en) 2018-08-30
EP2744930A4 (en) 2015-12-30
US20130044779A1 (en) 2013-02-21
US20150101526A1 (en) 2015-04-16
US10273595B2 (en) 2019-04-30
WO2013025926A1 (en) 2013-02-21
JP2014529566A (ja) 2014-11-13
EP2744930A1 (en) 2014-06-25

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