JP2014529566A5 - - Google Patents
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- Publication number
- JP2014529566A5 JP2014529566A5 JP2014526220A JP2014526220A JP2014529566A5 JP 2014529566 A5 JP2014529566 A5 JP 2014529566A5 JP 2014526220 A JP2014526220 A JP 2014526220A JP 2014526220 A JP2014526220 A JP 2014526220A JP 2014529566 A5 JP2014529566 A5 JP 2014529566A5
- Authority
- JP
- Japan
- Prior art keywords
- ingot
- heating element
- dopant
- portions
- moving
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 20
- 239000002019 doping agent Substances 0.000 claims 19
- 239000013078 crystal Substances 0.000 claims 17
- 238000010438 heat treatment Methods 0.000 claims 12
- 229910052691 Erbium Inorganic materials 0.000 claims 2
- 229910052689 Holmium Inorganic materials 0.000 claims 2
- 229910052779 Neodymium Inorganic materials 0.000 claims 2
- 229910052769 Ytterbium Inorganic materials 0.000 claims 2
- 230000006698 induction Effects 0.000 claims 2
- 238000002844 melting Methods 0.000 claims 2
- 230000008018 melting Effects 0.000 claims 2
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 claims 1
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 claims 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/210,786 | 2011-08-16 | ||
| US13/210,786 US20130044779A1 (en) | 2011-08-16 | 2011-08-16 | Method for tailoring the dopant profile in a laser crystal using zone processing |
| PCT/US2012/051189 WO2013025926A1 (en) | 2011-08-16 | 2012-08-16 | Method for tailoring the dopant profile in a laser crystal using zone processing |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014529566A JP2014529566A (ja) | 2014-11-13 |
| JP2014529566A5 true JP2014529566A5 (https=) | 2015-06-18 |
| JP6087923B2 JP6087923B2 (ja) | 2017-03-01 |
Family
ID=47712638
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014526220A Active JP6087923B2 (ja) | 2011-08-16 | 2012-08-16 | ゾーン処理を用いてレーザー結晶内のドーパントプロファイルを調節する方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (3) | US20130044779A1 (https=) |
| EP (1) | EP2744930B1 (https=) |
| JP (1) | JP6087923B2 (https=) |
| IL (1) | IL230316A (https=) |
| WO (1) | WO2013025926A1 (https=) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103436966B (zh) * | 2013-08-13 | 2016-05-04 | 安徽环巢光电科技有限公司 | 熔盐法键合掺杂或纯钇铝石榴石与掺杂钇铝石榴石晶体的方法 |
| US9726820B2 (en) * | 2014-08-14 | 2017-08-08 | Raytheon Company | End pumped PWG with tapered core thickness |
| RU2591253C1 (ru) * | 2015-04-30 | 2016-07-20 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Кубанский государственный университет" (ФГБОУ ВПО "КубГУ") | Монокристаллический материал с неоднородным распределением оптических примесей для активного лазерного элемента |
| CZ306311B6 (cs) * | 2015-07-16 | 2016-11-23 | Fyzikální Ústav Av Čr, V. V. I. | Optické elementy pro konstrukci výkonových laserových systémů a jejich příprava |
| JP6502285B2 (ja) * | 2016-04-28 | 2019-04-17 | 日本電信電話株式会社 | 単結晶ファイバの製造方法 |
| US10840668B2 (en) | 2016-06-17 | 2020-11-17 | Lawrence Livermore National Security, Llc | Laser gain media fabricated via direct ink writing (DIW) and ceramic processing |
| CN106329301A (zh) * | 2016-11-09 | 2017-01-11 | 上海卫星工程研究所 | 纳米阶梯掺杂结构的阳光泵浦激光工作晶体的制备方法 |
| US20220140206A1 (en) * | 2019-03-27 | 2022-05-05 | Tdk Corporation | Phosphor and light irradiation device |
| CN113463195B (zh) * | 2021-07-09 | 2022-09-02 | 中国电子科技集团公司第二十六研究所 | 一种生长梯度掺杂Yb: YAG单晶的方法 |
| US20230110835A1 (en) * | 2021-10-12 | 2023-04-13 | Lawrence Livermore National Security, Llc | Transparent ceramics fabricated by material jet printing |
| DE102023108160A1 (de) * | 2023-03-30 | 2024-10-02 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein | Verfahren zur Herstellung eines einkristallinen Körpers durch Festkörper-Umkristallisation |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3108073A (en) * | 1961-10-26 | 1963-10-22 | Grace W R & Co | Process for doping semiconductive bodies |
| US3671330A (en) * | 1970-10-21 | 1972-06-20 | Gen Electric | Removal of acceptor impurities from high purity germanium |
| US4040890A (en) * | 1975-06-27 | 1977-08-09 | Bell Telephone Laboratories, Incorporated | Neodymium oxide doped yttrium aluminum garnet optical fiber |
| US4186046A (en) * | 1976-09-29 | 1980-01-29 | The United States Of America As Represented By The Secretary Of The Army | Growing doped single crystal ceramic materials |
| EP0450494B1 (en) * | 1990-03-30 | 1996-06-19 | Sumitomo Sitix Corporation | Manufacturing method for single-crystal silicon |
| US5114528A (en) * | 1990-08-07 | 1992-05-19 | Wisconsin Alumni Research Foundation | Edge-defined contact heater apparatus and method for floating zone crystal growth |
| US5321711A (en) * | 1992-08-17 | 1994-06-14 | Alliedsignal Inc. | Segmented solid state laser gain media with gradient doping level |
| JP2922078B2 (ja) * | 1993-03-17 | 1999-07-19 | 株式会社トクヤマ | シリコンロッドの製造方法 |
| JP3443639B2 (ja) * | 2000-01-27 | 2003-09-08 | 独立行政法人産業技術総合研究所 | 傾斜型機能物質および製造方法 |
| JP4161051B2 (ja) * | 2003-06-16 | 2008-10-08 | 独立行政法人産業技術総合研究所 | 傾斜材料の製造方法 |
| JP2005327997A (ja) * | 2004-05-17 | 2005-11-24 | Akio Ikesue | 複合レーザー素子及びその素子を用いたレーザー発振器 |
| EP1739210B1 (de) * | 2005-07-01 | 2012-03-07 | Freiberger Compound Materials GmbH | Verfahren zur Herstellung von dotierten Halbleiter-Einkristallen, und III-V-Halbleiter-Einkristall |
| KR100827028B1 (ko) * | 2006-10-17 | 2008-05-02 | 주식회사 실트론 | 쵸크랄스키법을 이용한 반도체 단결정 제조 방법, 및 이방법에 의해 제조된 반도체 단결정 잉곳 및 웨이퍼 |
| US9074298B2 (en) * | 2008-08-18 | 2015-07-07 | Sumco Techxiv Corporation | Processes for production of silicon ingot, silicon wafer and epitaxial wafer, and silicon ingot |
| WO2011125897A1 (ja) * | 2010-03-31 | 2011-10-13 | 独立行政法人産業技術総合研究所 | 金属化合物結晶の製造方法、装飾品の製造方法および金属化合物結晶 |
-
2011
- 2011-08-16 US US13/210,786 patent/US20130044779A1/en not_active Abandoned
-
2012
- 2012-08-16 EP EP12823996.9A patent/EP2744930B1/en active Active
- 2012-08-16 JP JP2014526220A patent/JP6087923B2/ja active Active
- 2012-08-16 WO PCT/US2012/051189 patent/WO2013025926A1/en not_active Ceased
-
2014
- 2014-01-05 IL IL230316A patent/IL230316A/en active IP Right Grant
- 2014-09-16 US US14/487,295 patent/US9926644B2/en active Active
-
2018
- 2018-02-23 US US15/904,039 patent/US10273595B2/en active Active
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