IL230316A - A method for coordinating a doping profile in a laser crystal by region processing - Google Patents
A method for coordinating a doping profile in a laser crystal by region processingInfo
- Publication number
- IL230316A IL230316A IL230316A IL23031614A IL230316A IL 230316 A IL230316 A IL 230316A IL 230316 A IL230316 A IL 230316A IL 23031614 A IL23031614 A IL 23031614A IL 230316 A IL230316 A IL 230316A
- Authority
- IL
- Israel
- Prior art keywords
- ingot
- crystal
- dopant
- segments
- heating element
- Prior art date
Links
- 239000013078 crystal Substances 0.000 title claims description 108
- 239000002019 doping agent Substances 0.000 title claims description 72
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 238000000034 method Methods 0.000 claims description 42
- 238000010438 heat treatment Methods 0.000 claims description 33
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 claims description 10
- 229910052779 Neodymium Inorganic materials 0.000 claims description 9
- 230000006698 induction Effects 0.000 claims description 5
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 4
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052691 Erbium Inorganic materials 0.000 claims description 3
- 229910052689 Holmium Inorganic materials 0.000 claims description 3
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 claims description 3
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 claims description 3
- 239000007788 liquid Substances 0.000 description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 22
- 229910052710 silicon Inorganic materials 0.000 description 22
- 239000010703 silicon Substances 0.000 description 22
- 125000004429 atom Chemical group 0.000 description 21
- 239000000463 material Substances 0.000 description 16
- 230000008569 process Effects 0.000 description 16
- 238000012545 processing Methods 0.000 description 15
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 14
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 14
- 238000010521 absorption reaction Methods 0.000 description 9
- 150000002500 ions Chemical class 0.000 description 9
- 238000005086 pumping Methods 0.000 description 8
- 239000007787 solid Substances 0.000 description 8
- 239000012535 impurity Substances 0.000 description 7
- 238000002844 melting Methods 0.000 description 6
- 230000008018 melting Effects 0.000 description 6
- 239000000155 melt Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 238000005204 segregation Methods 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 4
- 239000000835 fiber Substances 0.000 description 4
- 230000005484 gravity Effects 0.000 description 4
- 239000007791 liquid phase Substances 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 229910052727 yttrium Inorganic materials 0.000 description 4
- 238000007598 dipping method Methods 0.000 description 3
- 239000008187 granular material Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 239000007790 solid phase Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 3
- 238000000576 coating method Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005553 drilling Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- -1 yttrium ions Chemical class 0.000 description 2
- XOJVVFBFDXDTEG-UHFFFAOYSA-N Norphytane Natural products CC(C)CCCC(C)CCCC(C)CCCC(C)C XOJVVFBFDXDTEG-UHFFFAOYSA-N 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000004061 bleaching Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000009749 continuous casting Methods 0.000 description 1
- 238000005090 crystal field Methods 0.000 description 1
- 239000011222 crystalline ceramic Substances 0.000 description 1
- 229910002106 crystalline ceramic Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005674 electromagnetic induction Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000001314 profilometry Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical group [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 238000004857 zone melting Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
- C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/22—Heating of the molten zone by irradiation or electric discharge
- C30B13/24—Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/12—Halides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0602—Crystal lasers or glass lasers
- H01S3/0617—Crystal lasers or glass lasers having a varying composition or cross-section in a specific direction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
- H01S3/1611—Solid materials characterised by an active (lasing) ion rare earth neodymium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
- H01S3/164—Solid materials characterised by a crystal matrix garnet
- H01S3/1643—YAG
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Electromagnetism (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Lasers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/210,786 US20130044779A1 (en) | 2011-08-16 | 2011-08-16 | Method for tailoring the dopant profile in a laser crystal using zone processing |
| PCT/US2012/051189 WO2013025926A1 (en) | 2011-08-16 | 2012-08-16 | Method for tailoring the dopant profile in a laser crystal using zone processing |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IL230316A true IL230316A (en) | 2016-06-30 |
Family
ID=47712638
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL230316A IL230316A (en) | 2011-08-16 | 2014-01-05 | A method for coordinating a doping profile in a laser crystal by region processing |
Country Status (5)
| Country | Link |
|---|---|
| US (3) | US20130044779A1 (https=) |
| EP (1) | EP2744930B1 (https=) |
| JP (1) | JP6087923B2 (https=) |
| IL (1) | IL230316A (https=) |
| WO (1) | WO2013025926A1 (https=) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103436966B (zh) * | 2013-08-13 | 2016-05-04 | 安徽环巢光电科技有限公司 | 熔盐法键合掺杂或纯钇铝石榴石与掺杂钇铝石榴石晶体的方法 |
| US9726820B2 (en) * | 2014-08-14 | 2017-08-08 | Raytheon Company | End pumped PWG with tapered core thickness |
| RU2591253C1 (ru) * | 2015-04-30 | 2016-07-20 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Кубанский государственный университет" (ФГБОУ ВПО "КубГУ") | Монокристаллический материал с неоднородным распределением оптических примесей для активного лазерного элемента |
| CZ306311B6 (cs) * | 2015-07-16 | 2016-11-23 | Fyzikální Ústav Av Čr, V. V. I. | Optické elementy pro konstrukci výkonových laserových systémů a jejich příprava |
| JP6502285B2 (ja) * | 2016-04-28 | 2019-04-17 | 日本電信電話株式会社 | 単結晶ファイバの製造方法 |
| US10840668B2 (en) | 2016-06-17 | 2020-11-17 | Lawrence Livermore National Security, Llc | Laser gain media fabricated via direct ink writing (DIW) and ceramic processing |
| CN106329301A (zh) * | 2016-11-09 | 2017-01-11 | 上海卫星工程研究所 | 纳米阶梯掺杂结构的阳光泵浦激光工作晶体的制备方法 |
| US20220140206A1 (en) * | 2019-03-27 | 2022-05-05 | Tdk Corporation | Phosphor and light irradiation device |
| CN113463195B (zh) * | 2021-07-09 | 2022-09-02 | 中国电子科技集团公司第二十六研究所 | 一种生长梯度掺杂Yb: YAG单晶的方法 |
| US20230110835A1 (en) * | 2021-10-12 | 2023-04-13 | Lawrence Livermore National Security, Llc | Transparent ceramics fabricated by material jet printing |
| DE102023108160A1 (de) * | 2023-03-30 | 2024-10-02 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein | Verfahren zur Herstellung eines einkristallinen Körpers durch Festkörper-Umkristallisation |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3108073A (en) * | 1961-10-26 | 1963-10-22 | Grace W R & Co | Process for doping semiconductive bodies |
| US3671330A (en) * | 1970-10-21 | 1972-06-20 | Gen Electric | Removal of acceptor impurities from high purity germanium |
| US4040890A (en) * | 1975-06-27 | 1977-08-09 | Bell Telephone Laboratories, Incorporated | Neodymium oxide doped yttrium aluminum garnet optical fiber |
| US4186046A (en) * | 1976-09-29 | 1980-01-29 | The United States Of America As Represented By The Secretary Of The Army | Growing doped single crystal ceramic materials |
| EP0450494B1 (en) * | 1990-03-30 | 1996-06-19 | Sumitomo Sitix Corporation | Manufacturing method for single-crystal silicon |
| US5114528A (en) * | 1990-08-07 | 1992-05-19 | Wisconsin Alumni Research Foundation | Edge-defined contact heater apparatus and method for floating zone crystal growth |
| US5321711A (en) * | 1992-08-17 | 1994-06-14 | Alliedsignal Inc. | Segmented solid state laser gain media with gradient doping level |
| JP2922078B2 (ja) * | 1993-03-17 | 1999-07-19 | 株式会社トクヤマ | シリコンロッドの製造方法 |
| JP3443639B2 (ja) * | 2000-01-27 | 2003-09-08 | 独立行政法人産業技術総合研究所 | 傾斜型機能物質および製造方法 |
| JP4161051B2 (ja) * | 2003-06-16 | 2008-10-08 | 独立行政法人産業技術総合研究所 | 傾斜材料の製造方法 |
| JP2005327997A (ja) * | 2004-05-17 | 2005-11-24 | Akio Ikesue | 複合レーザー素子及びその素子を用いたレーザー発振器 |
| EP1739210B1 (de) * | 2005-07-01 | 2012-03-07 | Freiberger Compound Materials GmbH | Verfahren zur Herstellung von dotierten Halbleiter-Einkristallen, und III-V-Halbleiter-Einkristall |
| KR100827028B1 (ko) * | 2006-10-17 | 2008-05-02 | 주식회사 실트론 | 쵸크랄스키법을 이용한 반도체 단결정 제조 방법, 및 이방법에 의해 제조된 반도체 단결정 잉곳 및 웨이퍼 |
| US9074298B2 (en) * | 2008-08-18 | 2015-07-07 | Sumco Techxiv Corporation | Processes for production of silicon ingot, silicon wafer and epitaxial wafer, and silicon ingot |
| WO2011125897A1 (ja) * | 2010-03-31 | 2011-10-13 | 独立行政法人産業技術総合研究所 | 金属化合物結晶の製造方法、装飾品の製造方法および金属化合物結晶 |
-
2011
- 2011-08-16 US US13/210,786 patent/US20130044779A1/en not_active Abandoned
-
2012
- 2012-08-16 EP EP12823996.9A patent/EP2744930B1/en active Active
- 2012-08-16 JP JP2014526220A patent/JP6087923B2/ja active Active
- 2012-08-16 WO PCT/US2012/051189 patent/WO2013025926A1/en not_active Ceased
-
2014
- 2014-01-05 IL IL230316A patent/IL230316A/en active IP Right Grant
- 2014-09-16 US US14/487,295 patent/US9926644B2/en active Active
-
2018
- 2018-02-23 US US15/904,039 patent/US10273595B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP6087923B2 (ja) | 2017-03-01 |
| EP2744930B1 (en) | 2017-01-11 |
| US9926644B2 (en) | 2018-03-27 |
| US20180245236A1 (en) | 2018-08-30 |
| EP2744930A4 (en) | 2015-12-30 |
| US20130044779A1 (en) | 2013-02-21 |
| US20150101526A1 (en) | 2015-04-16 |
| US10273595B2 (en) | 2019-04-30 |
| WO2013025926A1 (en) | 2013-02-21 |
| JP2014529566A (ja) | 2014-11-13 |
| EP2744930A1 (en) | 2014-06-25 |
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