JP6079217B2 - フォトレジスト組成物、レジストパターン形成方法及び酸発生剤 - Google Patents

フォトレジスト組成物、レジストパターン形成方法及び酸発生剤 Download PDF

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Publication number
JP6079217B2
JP6079217B2 JP2012281859A JP2012281859A JP6079217B2 JP 6079217 B2 JP6079217 B2 JP 6079217B2 JP 2012281859 A JP2012281859 A JP 2012281859A JP 2012281859 A JP2012281859 A JP 2012281859A JP 6079217 B2 JP6079217 B2 JP 6079217B2
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group
carbon atoms
formula
alicyclic hydrocarbon
hydrocarbon group
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Japanese (ja)
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JP2013152451A (ja
Inventor
吉田　昌史
昌史 吉田
一樹 笠原
一樹 笠原
一雄 中原
一雄 中原
雅史 堀
雅史 堀
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JSR Corp
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JSR Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
JP2012281859A 2011-12-28 2012-12-25 フォトレジスト組成物、レジストパターン形成方法及び酸発生剤 Active JP6079217B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012281859A JP6079217B2 (ja) 2011-12-28 2012-12-25 フォトレジスト組成物、レジストパターン形成方法及び酸発生剤

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011290137 2011-12-28
JP2011290137 2011-12-28
JP2012281859A JP6079217B2 (ja) 2011-12-28 2012-12-25 フォトレジスト組成物、レジストパターン形成方法及び酸発生剤

Publications (2)

Publication Number Publication Date
JP2013152451A JP2013152451A (ja) 2013-08-08
JP6079217B2 true JP6079217B2 (ja) 2017-02-15

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Family Applications (1)

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JP2012281859A Active JP6079217B2 (ja) 2011-12-28 2012-12-25 フォトレジスト組成物、レジストパターン形成方法及び酸発生剤

Country Status (2)

Country Link
JP (1) JP6079217B2 (ko)
KR (1) KR101996088B1 (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016018075A (ja) * 2014-07-08 2016-02-01 東京応化工業株式会社 レジストパターン形成方法及びレジスト組成物
JP7042551B2 (ja) * 2016-09-20 2022-03-28 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4110319B2 (ja) 2001-06-29 2008-07-02 Ｊｓｒ株式会社 感放射線性酸発生剤および感放射線性樹脂組成物
JP4491335B2 (ja) 2004-02-16 2010-06-30 富士フイルム株式会社 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法
US7834209B2 (en) 2005-06-07 2010-11-16 E.I. Du Pont De Nemours And Company Hydrofluoroalkanesulfonic acids from fluorovinyl ethers
JP4905666B2 (ja) 2005-10-31 2012-03-28 信越化学工業株式会社 新規スルホン酸塩及びその誘導体、光酸発生剤並びにこれを用いたレジスト材料及びパターン形成方法
JP5226994B2 (ja) 2006-09-11 2013-07-03 住友化学株式会社 化学増幅型レジスト組成物の酸発生剤の中間体
JP5621275B2 (ja) * 2009-03-23 2014-11-12 Jsr株式会社 イオンプランテーション用フォトレジストパターン形成方法。
KR20100121427A (ko) * 2009-05-07 2010-11-17 제이에스알 가부시끼가이샤 감방사선성 수지 조성물
JP5581726B2 (ja) * 2010-02-22 2014-09-03 Ｊｓｒ株式会社 感放射線性樹脂組成物及びレジストパターン形成方法
KR101813298B1 (ko) * 2010-02-24 2017-12-28 바스프 에스이 잠재성 산 및 그의 용도
KR20110132207A (ko) * 2010-06-01 2011-12-07 금호석유화학 주식회사 광산발생제, 이의 제조방법 및 이를 포함하는 레지스트 조성물
KR20110131904A (ko) * 2010-06-01 2011-12-07 금호석유화학 주식회사 광산발생제, 이의 제조방법 및 이를 포함하는 레지스트 조성물
JP2011251961A (ja) * 2010-06-01 2011-12-15 Korea Kumho Petrochemical Co Ltd 光酸発生剤、この製造方法、及びこれを含むレジスト組成物
JP5745391B2 (ja) * 2011-12-05 2015-07-08 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、並びに、該組成物を用いたレジスト膜、パターン形成方法、電子デバイスの製造方法及び電子デバイス
JP2013130654A (ja) * 2011-12-20 2013-07-04 Fujifilm Corp 感活性光線性又は感放射線性樹脂組成物、該組成物を用いたレジスト膜及びパターン形成方法、並びに電子デバイスの製造方法及び電子デバイス

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JP2013152451A (ja) 2013-08-08
KR20130076766A (ko) 2013-07-08
KR101996088B1 (ko) 2019-07-03

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