JP6078347B2 - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

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JP6078347B2
JP6078347B2 JP2013000778A JP2013000778A JP6078347B2 JP 6078347 B2 JP6078347 B2 JP 6078347B2 JP 2013000778 A JP2013000778 A JP 2013000778A JP 2013000778 A JP2013000778 A JP 2013000778A JP 6078347 B2 JP6078347 B2 JP 6078347B2
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plasma
frequency
detected
plasma processing
frequency power
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JP2014135305A (ja
JP2014135305A5 (enExample
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基裕 田中
基裕 田中
角屋　誠浩
誠浩 角屋
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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  • Drying Of Semiconductors (AREA)
JP2013000778A 2013-01-08 2013-01-08 プラズマ処理装置 Active JP6078347B2 (ja)

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JP2013000778A JP6078347B2 (ja) 2013-01-08 2013-01-08 プラズマ処理装置

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JP2014135305A JP2014135305A (ja) 2014-07-24
JP2014135305A5 JP2014135305A5 (enExample) 2015-08-27
JP6078347B2 true JP6078347B2 (ja) 2017-02-08

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Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10395895B2 (en) 2015-08-27 2019-08-27 Mks Instruments, Inc. Feedback control by RF waveform tailoring for ion energy distribution
JP6675260B2 (ja) * 2016-04-27 2020-04-01 東京エレクトロン株式会社 変圧器、プラズマ処理装置、及び、プラズマ処理方法
JP7111299B2 (ja) * 2016-11-14 2022-08-02 国立研究開発法人産業技術総合研究所 ダイヤモンドを合成する方法及びプラズマ処理装置
JP7134695B2 (ja) * 2018-04-27 2022-09-12 東京エレクトロン株式会社 プラズマ処理装置、及び電源制御方法
KR20250100790A (ko) * 2019-01-22 2025-07-03 어플라이드 머티어리얼스, 인코포레이티드 펄스 전압 파형을 제어하기 위한 피드백 루프
CN113272939B (zh) * 2019-12-17 2023-11-14 株式会社日立高新技术 等离子体处理装置以及等离子体处理装置的工作方法
JP7454971B2 (ja) * 2020-03-17 2024-03-25 東京エレクトロン株式会社 検出方法及びプラズマ処理装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3157605B2 (ja) * 1992-04-28 2001-04-16 東京エレクトロン株式会社 プラズマ処理装置
JPH07258853A (ja) * 1993-04-14 1995-10-09 Texas Instr Inc <Ti> プロセスの状態を識別する方法および装置
JP2001007089A (ja) * 1999-06-25 2001-01-12 Matsushita Electric Ind Co Ltd プラズマ処理方法及び装置
JP3976480B2 (ja) * 2000-07-18 2007-09-19 株式会社日立製作所 プラズマ処理装置

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