JP6077382B2 - 半導体装置および半導体装置の作製方法 - Google Patents

半導体装置および半導体装置の作製方法 Download PDF

Info

Publication number
JP6077382B2
JP6077382B2 JP2013097234A JP2013097234A JP6077382B2 JP 6077382 B2 JP6077382 B2 JP 6077382B2 JP 2013097234 A JP2013097234 A JP 2013097234A JP 2013097234 A JP2013097234 A JP 2013097234A JP 6077382 B2 JP6077382 B2 JP 6077382B2
Authority
JP
Japan
Prior art keywords
film
oxide semiconductor
insulating film
transistor
oxygen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2013097234A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013254942A5 (https=
JP2013254942A (ja
Inventor
大吾 伊藤
大吾 伊藤
耕生 野田
耕生 野田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2013097234A priority Critical patent/JP6077382B2/ja
Publication of JP2013254942A publication Critical patent/JP2013254942A/ja
Publication of JP2013254942A5 publication Critical patent/JP2013254942A5/ja
Application granted granted Critical
Publication of JP6077382B2 publication Critical patent/JP6077382B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Liquid Crystal (AREA)
JP2013097234A 2012-05-11 2013-05-06 半導体装置および半導体装置の作製方法 Expired - Fee Related JP6077382B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013097234A JP6077382B2 (ja) 2012-05-11 2013-05-06 半導体装置および半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012109762 2012-05-11
JP2012109762 2012-05-11
JP2013097234A JP6077382B2 (ja) 2012-05-11 2013-05-06 半導体装置および半導体装置の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2017003571A Division JP6275294B2 (ja) 2012-05-11 2017-01-12 半導体装置

Publications (3)

Publication Number Publication Date
JP2013254942A JP2013254942A (ja) 2013-12-19
JP2013254942A5 JP2013254942A5 (https=) 2016-05-19
JP6077382B2 true JP6077382B2 (ja) 2017-02-08

Family

ID=49952185

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2013097234A Expired - Fee Related JP6077382B2 (ja) 2012-05-11 2013-05-06 半導体装置および半導体装置の作製方法
JP2017003571A Expired - Fee Related JP6275294B2 (ja) 2012-05-11 2017-01-12 半導体装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2017003571A Expired - Fee Related JP6275294B2 (ja) 2012-05-11 2017-01-12 半導体装置

Country Status (1)

Country Link
JP (2) JP6077382B2 (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015114476A1 (en) * 2014-01-28 2015-08-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9443876B2 (en) * 2014-02-05 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic device including the semiconductor device, the display device, and the display module
WO2015121771A1 (en) 2014-02-14 2015-08-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
JP6486712B2 (ja) * 2014-04-30 2019-03-20 株式会社半導体エネルギー研究所 酸化物半導体膜
KR102760229B1 (ko) * 2014-05-30 2025-02-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 이의 제조 방법, 및 전자 장치
KR102788207B1 (ko) * 2015-04-13 2025-03-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN108369948B (zh) * 2015-12-23 2024-10-18 英特尔公司 用于改进的静电学的非平面igzo器件的制造
JP2020004861A (ja) 2018-06-28 2020-01-09 堺ディスプレイプロダクト株式会社 薄膜トランジスタ、表示装置及び薄膜トランジスタの製造方法
US11495689B2 (en) 2018-08-08 2022-11-08 Sakai Display Products Corporation Thin-film transistor and method for producing same
KR20210081365A (ko) 2018-10-26 2021-07-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 및 반도체 장치의 제작 방법
CN113875022B (zh) 2019-06-04 2024-05-14 堺显示器制品株式会社 薄膜晶体管及其制造方法以及显示装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5052033B2 (ja) * 2005-04-28 2012-10-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2007132879A1 (ja) * 2006-05-17 2007-11-22 Nec Corporation 半導体装置、半導体装置の製造方法及び半導体製造装置
KR101579050B1 (ko) * 2008-10-03 2015-12-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치
JP5587591B2 (ja) * 2008-11-07 2014-09-10 株式会社半導体エネルギー研究所 半導体装置
JP5587592B2 (ja) * 2008-11-07 2014-09-10 株式会社半導体エネルギー研究所 半導体装置
JP2010272571A (ja) * 2009-05-19 2010-12-02 Panasonic Corp 半導体装置及びその製造方法
WO2011089808A1 (en) * 2010-01-20 2011-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8692243B2 (en) * 2010-04-20 2014-04-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011145467A1 (en) * 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011155295A1 (en) * 2010-06-10 2011-12-15 Semiconductor Energy Laboratory Co., Ltd. Dc/dc converter, power supply circuit, and semiconductor device
JP5705559B2 (ja) * 2010-06-22 2015-04-22 ルネサスエレクトロニクス株式会社 半導体装置、及び、半導体装置の製造方法
US8871565B2 (en) * 2010-09-13 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device

Also Published As

Publication number Publication date
JP2013254942A (ja) 2013-12-19
JP2017063235A (ja) 2017-03-30
JP6275294B2 (ja) 2018-02-07

Similar Documents

Publication Publication Date Title
JP6077382B2 (ja) 半導体装置および半導体装置の作製方法
US11393918B2 (en) Semiconductor device and method for manufacturing semiconductor device
JP2024097837A (ja) 半導体装置
US10079312B2 (en) Semiconductor device and method for manufacturing the same
TWI613824B (zh) 半導體裝置
US9082663B2 (en) Semiconductor device and manufacturing method thereof
JP6034670B2 (ja) 半導体装置の作製方法
JP6088312B2 (ja) 半導体装置
JP6345299B2 (ja) 半導体装置
JP6026839B2 (ja) 半導体装置
JP5806905B2 (ja) 半導体装置
JP6082562B2 (ja) 半導体装置
KR20130040706A (ko) 반도체 장치 및 반도체 장치의 제작 방법
JP2013242954A (ja) 半導体装置
US20150054548A1 (en) Semiconductor device and method for manufacturing semiconductor device
JP6534530B2 (ja) 半導体装置
JP2017174491A (ja) 記憶装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160328

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20160328

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20161227

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20161227

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20170112

R150 Certificate of patent or registration of utility model

Ref document number: 6077382

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees