JP6072432B2 - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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Publication number
JP6072432B2
JP6072432B2 JP2012111272A JP2012111272A JP6072432B2 JP 6072432 B2 JP6072432 B2 JP 6072432B2 JP 2012111272 A JP2012111272 A JP 2012111272A JP 2012111272 A JP2012111272 A JP 2012111272A JP 6072432 B2 JP6072432 B2 JP 6072432B2
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Japan
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region
source
conductivity type
well
resistance control
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JP2012111272A
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English (en)
Japanese (ja)
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JP2013239554A (ja
JP2013239554A5 (enExample
Inventor
三浦　成久
成久 三浦
史郎 日野
史郎 日野
古川　彰彦
彰彦 古川
阿部　雄次
雄次 阿部
中田　修平
修平 中田
昌之 今泉
昌之 今泉
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Priority to JP2012111272A priority Critical patent/JP6072432B2/ja
Publication of JP2013239554A publication Critical patent/JP2013239554A/ja
Publication of JP2013239554A5 publication Critical patent/JP2013239554A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/152—Source regions of DMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

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  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2012111272A 2012-05-15 2012-05-15 半導体装置及びその製造方法 Active JP6072432B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012111272A JP6072432B2 (ja) 2012-05-15 2012-05-15 半導体装置及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012111272A JP6072432B2 (ja) 2012-05-15 2012-05-15 半導体装置及びその製造方法

Publications (3)

Publication Number Publication Date
JP2013239554A JP2013239554A (ja) 2013-11-28
JP2013239554A5 JP2013239554A5 (enExample) 2014-11-27
JP6072432B2 true JP6072432B2 (ja) 2017-02-01

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Family Applications (1)

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JP2012111272A Active JP6072432B2 (ja) 2012-05-15 2012-05-15 半導体装置及びその製造方法

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JP (1) JP6072432B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105304713A (zh) * 2014-07-24 2016-02-03 住友电气工业株式会社 碳化硅半导体器件

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6282088B2 (ja) * 2013-11-13 2018-02-21 三菱電機株式会社 半導体装置及びその製造方法
JP6463214B2 (ja) * 2014-05-08 2019-01-30 三菱電機株式会社 半導体装置
JP6244272B2 (ja) * 2014-06-30 2017-12-06 株式会社日立製作所 半導体装置
CN107078160B (zh) * 2014-10-20 2020-07-17 三菱电机株式会社 半导体装置
JP6322130B2 (ja) * 2014-12-24 2018-05-09 株式会社日立製作所 半導体装置、その製造方法、それを用いた電力変換装置
JP6325743B2 (ja) * 2015-03-11 2018-05-16 株式会社日立製作所 半導体装置およびその製造方法、並びに電力変換装置
US10229974B2 (en) 2015-05-18 2019-03-12 Hitachi, Ltd. Semiconductor device and power conversion device
JPWO2017169777A1 (ja) * 2016-03-29 2018-06-14 三菱電機株式会社 炭化珪素半導体装置および電力変換器
WO2017179102A1 (ja) * 2016-04-11 2017-10-19 三菱電機株式会社 半導体装置
US10665459B2 (en) 2016-10-13 2020-05-26 Mitsubishi Electric Corporation Method for manufacturing semiconductor device
CN111512448B (zh) * 2017-12-21 2023-04-28 三菱电机株式会社 半导体装置
JP7205286B2 (ja) * 2019-02-21 2023-01-17 株式会社デンソー 半導体装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5742164A (en) * 1980-08-27 1982-03-09 Hitachi Ltd Semiconductor device
JPS60229373A (ja) * 1984-04-27 1985-11-14 Toshiba Corp 半導体装置
JPH02106073A (ja) * 1988-10-15 1990-04-18 Fuji Electric Co Ltd 伝導度変調型ｍｏｓｆｅｔの製造方法
JP3160954B2 (ja) * 1991-09-27 2001-04-25 日本電気株式会社 半導体装置
EP1429391A1 (en) * 2002-12-10 2004-06-16 ABB Schweiz AG Insulated gate semiconductor device and method of making the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105304713A (zh) * 2014-07-24 2016-02-03 住友电气工业株式会社 碳化硅半导体器件
CN105304713B (zh) * 2014-07-24 2019-07-19 住友电气工业株式会社 碳化硅半导体器件

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Publication number Publication date
JP2013239554A (ja) 2013-11-28

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