JP6069153B2 - アンダーフィル材、及びこれを用いた半導体装置の製造方法 - Google Patents

アンダーフィル材、及びこれを用いた半導体装置の製造方法 Download PDF

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Publication number
JP6069153B2
JP6069153B2 JP2013201613A JP2013201613A JP6069153B2 JP 6069153 B2 JP6069153 B2 JP 6069153B2 JP 2013201613 A JP2013201613 A JP 2013201613A JP 2013201613 A JP2013201613 A JP 2013201613A JP 6069153 B2 JP6069153 B2 JP 6069153B2
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reaction rate
underfill material
semiconductor chip
underfill
time
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Japanese (ja)
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JP2015070043A (ja
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浩伸 森山
浩伸 森山
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Dexerials Corp
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Dexerials Corp
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Priority to JP2013201613A priority Critical patent/JP6069153B2/ja
Application filed by Dexerials Corp filed Critical Dexerials Corp
Priority to KR1020157003774A priority patent/KR102321668B1/ko
Priority to TW103131083A priority patent/TWI649843B/zh
Priority to PCT/JP2014/073965 priority patent/WO2015045877A1/ja
Priority to US14/423,881 priority patent/US9653371B2/en
Priority to CN201480002243.7A priority patent/CN104956471B/zh
Priority to EP14848144.3A priority patent/EP3051580B1/en
Publication of JP2015070043A publication Critical patent/JP2015070043A/ja
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Publication of JP6069153B2 publication Critical patent/JP6069153B2/ja
Priority to US15/486,663 priority patent/US10062625B2/en
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    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06513—Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
    • H—ELECTRICITY
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    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06541—Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
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    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
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    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75—Apparatus for connecting with bump connectors or layer connectors
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/186—Material
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    • H01L2924/20—Parameters
    • H01L2924/201—Temperature ranges
    • H01L2924/20104—Temperature range 100 C=<T<150 C, 373.15 K =< T < 423.15K

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  • Engineering & Computer Science (AREA)
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  • Polymers & Plastics (AREA)
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  • Medicinal Chemistry (AREA)
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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Epoxy Resins (AREA)
  • Adhesives Or Adhesive Processes (AREA)
JP2013201613A 2013-09-27 2013-09-27 アンダーフィル材、及びこれを用いた半導体装置の製造方法 Active JP6069153B2 (ja)

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TW103131083A TWI649843B (zh) 2013-09-27 2014-09-10 底部塡充材料及使用其之半導體裝置的製造方法
PCT/JP2014/073965 WO2015045877A1 (ja) 2013-09-27 2014-09-10 アンダーフィル材、及びこれを用いた半導体装置の製造方法
US14/423,881 US9653371B2 (en) 2013-09-27 2014-09-10 Underfill material and method for manufacturing semiconductor device using the same
KR1020157003774A KR102321668B1 (ko) 2013-09-27 2014-09-10 언더필재 및 이것을 사용한 반도체 장치의 제조 방법
CN201480002243.7A CN104956471B (zh) 2013-09-27 2014-09-10 底部填充材料以及采用它的半导体装置的制造方法
EP14848144.3A EP3051580B1 (en) 2013-09-27 2014-09-10 Underfill material and method for manufacturing semiconductor device using said underfill material
US15/486,663 US10062625B2 (en) 2013-09-27 2017-04-13 Underfill material and method for manufacturing semiconductor device using the same

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US9806046B2 (en) * 2014-03-13 2017-10-31 Taiwan Semiconductor Manufacturing Co., Ltd Semiconductor device structure and manufacturing method
KR102019468B1 (ko) * 2016-11-29 2019-09-06 주식회사 엘지화학 반도체용 접착 필름 및 반도체 장치
US11309278B2 (en) 2018-10-29 2022-04-19 Applied Materials, Inc. Methods for bonding substrates
JP7390824B2 (ja) * 2019-08-28 2023-12-04 デクセリアルズ株式会社 半導体装置の製造方法
CN112969307B (zh) * 2021-02-01 2024-02-09 深圳瑞君新材料技术有限公司 一种碳基填充材料的制备方法

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EP3051580A4 (en) 2017-07-05
EP3051580A1 (en) 2016-08-03
US10062625B2 (en) 2018-08-28
KR102321668B1 (ko) 2021-11-04
TWI649843B (zh) 2019-02-01
EP3051580B1 (en) 2022-10-26
CN104956471A (zh) 2015-09-30
TW201528451A (zh) 2015-07-16
US20150348859A1 (en) 2015-12-03
KR20160064032A (ko) 2016-06-07
CN104956471B (zh) 2020-05-01

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