JP6069054B2 - 不揮発性半導体記憶装置 - Google Patents

不揮発性半導体記憶装置 Download PDF

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Publication number
JP6069054B2
JP6069054B2 JP2013057328A JP2013057328A JP6069054B2 JP 6069054 B2 JP6069054 B2 JP 6069054B2 JP 2013057328 A JP2013057328 A JP 2013057328A JP 2013057328 A JP2013057328 A JP 2013057328A JP 6069054 B2 JP6069054 B2 JP 6069054B2
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Japan
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region
voltage
memory
memory device
semiconductor memory
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JP2013057328A
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English (en)
Japanese (ja)
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JP2014183233A (ja
JP2014183233A5 (enExample
Inventor
谷口　泰弘
泰弘 谷口
奥山　幸祐
幸祐 奥山
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Floadia Corp
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Floadia Corp
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Publication date
Application filed by Floadia Corp filed Critical Floadia Corp
Priority to JP2013057328A priority Critical patent/JP6069054B2/ja
Priority to TW103106017A priority patent/TWI619232B/zh
Priority to US14/215,536 priority patent/US9437736B2/en
Publication of JP2014183233A publication Critical patent/JP2014183233A/ja
Publication of JP2014183233A5 publication Critical patent/JP2014183233A5/ja
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Publication of JP6069054B2 publication Critical patent/JP6069054B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/711—Insulated-gate field-effect transistors [IGFET] having floating bodies
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0221—Manufacture or treatment of FETs having insulated gates [IGFET] having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended-drain MOSFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H10D30/694—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
JP2013057328A 2013-03-19 2013-03-19 不揮発性半導体記憶装置 Active JP6069054B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2013057328A JP6069054B2 (ja) 2013-03-19 2013-03-19 不揮発性半導体記憶装置
TW103106017A TWI619232B (zh) 2013-03-19 2014-02-24 Non-volatile semiconductor memory device
US14/215,536 US9437736B2 (en) 2013-03-19 2014-03-17 Non-volatile semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013057328A JP6069054B2 (ja) 2013-03-19 2013-03-19 不揮発性半導体記憶装置

Publications (3)

Publication Number Publication Date
JP2014183233A JP2014183233A (ja) 2014-09-29
JP2014183233A5 JP2014183233A5 (enExample) 2016-03-03
JP6069054B2 true JP6069054B2 (ja) 2017-01-25

Family

ID=51568512

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013057328A Active JP6069054B2 (ja) 2013-03-19 2013-03-19 不揮発性半導体記憶装置

Country Status (3)

Country Link
US (1) US9437736B2 (enExample)
JP (1) JP6069054B2 (enExample)
TW (1) TWI619232B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9953719B2 (en) * 2016-05-18 2018-04-24 Silicon Storage Technology, Inc. Flash memory cell and associated decoders
US10885753B2 (en) 2018-03-21 2021-01-05 Fasteners For Retail, Inc. Anti-theft device with remote alarm feature
US10993550B2 (en) 2018-03-21 2021-05-04 Fasteners For Retail, Inc. Anti-theft retail merchandise pusher with remote alarm feature
MX2021011479A (es) 2019-04-05 2021-11-12 Fasteners For Retail Inc Empujador antirrobo con deteccion de distancia por incrementos.
US11154143B2 (en) 2019-09-30 2021-10-26 Fasteners For Retail, Inc. Anti-theft hook with integrated loss prevention functionality
US12437262B2 (en) 2021-08-23 2025-10-07 Fasteners For Retail, Inc. Anti-sweeping hook with integrated inventory monitoring and/or loss prevention functionality
US12433428B2 (en) 2021-08-23 2025-10-07 Fasteners For Retail, Inc. Anti-sweeping hook with integrated inventory monitoring and/or loss prevention functionality
CN118412014B (zh) * 2024-05-15 2025-05-13 北京大学 存储单元、存储阵列、电子设备及数据处理方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0997849A (ja) * 1995-10-02 1997-04-08 Toshiba Corp 半導体装置
US6384457B2 (en) * 1999-05-03 2002-05-07 Intel Corporation Asymmetric MOSFET devices
JP2001057394A (ja) * 1999-06-09 2001-02-27 Matsushita Electric Ind Co Ltd 不揮発性半導体記憶装置及びその製造方法
JP2004104009A (ja) * 2002-09-12 2004-04-02 Fujitsu Ltd 半導体装置及びその製造方法
JP2004349308A (ja) * 2003-05-20 2004-12-09 Sharp Corp 半導体記憶装置
JP2005252034A (ja) * 2004-03-04 2005-09-15 Sony Corp 不揮発性半導体メモリ装置とその電荷注入方法、および、電子装置
JP2007103424A (ja) * 2005-09-30 2007-04-19 Oki Electric Ind Co Ltd メモリセル及びそのメモリセルを有する半導体不揮発性メモリの構造。
TWI311796B (en) 2005-11-17 2009-07-01 Ememory Technology Inc Semiconductor device and manufacturing method thereof
JP4854375B2 (ja) * 2006-04-19 2012-01-18 シャープ株式会社 半導体記憶装置及びその製造方法、並びに携帯電子機器
JP5205011B2 (ja) * 2007-08-24 2013-06-05 ルネサスエレクトロニクス株式会社 不揮発性半導体装置およびその製造方法
JP2012059777A (ja) * 2010-09-06 2012-03-22 Renesas Electronics Corp 半導体装置およびその製造方法
US20130015516A1 (en) * 2011-07-11 2013-01-17 Kim Sang Y Asymmetrical non-volatile memory cell and method for fabricating the same
US9231097B2 (en) * 2012-02-07 2016-01-05 Mediatek Inc. HVMOS transistor structure having offset distance and method for fabricating the same

Also Published As

Publication number Publication date
TW201501271A (zh) 2015-01-01
US9437736B2 (en) 2016-09-06
US20140284677A1 (en) 2014-09-25
TWI619232B (zh) 2018-03-21
JP2014183233A (ja) 2014-09-29

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