TWI619232B - Non-volatile semiconductor memory device - Google Patents

Non-volatile semiconductor memory device Download PDF

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Publication number
TWI619232B
TWI619232B TW103106017A TW103106017A TWI619232B TW I619232 B TWI619232 B TW I619232B TW 103106017 A TW103106017 A TW 103106017A TW 103106017 A TW103106017 A TW 103106017A TW I619232 B TWI619232 B TW I619232B
Authority
TW
Taiwan
Prior art keywords
region
voltage
memory
source
volatile semiconductor
Prior art date
Application number
TW103106017A
Other languages
English (en)
Chinese (zh)
Other versions
TW201501271A (zh
Inventor
Yasuhiro Taniguchi
Kosuke Okuyama
Original Assignee
Floadia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Floadia Corp filed Critical Floadia Corp
Publication of TW201501271A publication Critical patent/TW201501271A/zh
Application granted granted Critical
Publication of TWI619232B publication Critical patent/TWI619232B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/711—Insulated-gate field-effect transistors [IGFET] having floating bodies
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0221—Manufacture or treatment of FETs having insulated gates [IGFET] having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended-drain MOSFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H10D30/694—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
TW103106017A 2013-03-19 2014-02-24 Non-volatile semiconductor memory device TWI619232B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013057328A JP6069054B2 (ja) 2013-03-19 2013-03-19 不揮発性半導体記憶装置

Publications (2)

Publication Number Publication Date
TW201501271A TW201501271A (zh) 2015-01-01
TWI619232B true TWI619232B (zh) 2018-03-21

Family

ID=51568512

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103106017A TWI619232B (zh) 2013-03-19 2014-02-24 Non-volatile semiconductor memory device

Country Status (3)

Country Link
US (1) US9437736B2 (enExample)
JP (1) JP6069054B2 (enExample)
TW (1) TWI619232B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9953719B2 (en) * 2016-05-18 2018-04-24 Silicon Storage Technology, Inc. Flash memory cell and associated decoders
US10885753B2 (en) 2018-03-21 2021-01-05 Fasteners For Retail, Inc. Anti-theft device with remote alarm feature
US10993550B2 (en) 2018-03-21 2021-05-04 Fasteners For Retail, Inc. Anti-theft retail merchandise pusher with remote alarm feature
MX2021011479A (es) 2019-04-05 2021-11-12 Fasteners For Retail Inc Empujador antirrobo con deteccion de distancia por incrementos.
US11154143B2 (en) 2019-09-30 2021-10-26 Fasteners For Retail, Inc. Anti-theft hook with integrated loss prevention functionality
US12437262B2 (en) 2021-08-23 2025-10-07 Fasteners For Retail, Inc. Anti-sweeping hook with integrated inventory monitoring and/or loss prevention functionality
US12433428B2 (en) 2021-08-23 2025-10-07 Fasteners For Retail, Inc. Anti-sweeping hook with integrated inventory monitoring and/or loss prevention functionality
CN118412014B (zh) * 2024-05-15 2025-05-13 北京大学 存储单元、存储阵列、电子设备及数据处理方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004104009A (ja) * 2002-09-12 2004-04-02 Fujitsu Ltd 半導体装置及びその製造方法
US20040232475A1 (en) * 2003-05-20 2004-11-25 Kotaro Kataoka Semiconductor memory
JP2007288060A (ja) * 2006-04-19 2007-11-01 Sharp Corp 半導体記憶装置及びその製造方法、並びに携帯電子機器

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0997849A (ja) * 1995-10-02 1997-04-08 Toshiba Corp 半導体装置
US6384457B2 (en) * 1999-05-03 2002-05-07 Intel Corporation Asymmetric MOSFET devices
JP2001057394A (ja) * 1999-06-09 2001-02-27 Matsushita Electric Ind Co Ltd 不揮発性半導体記憶装置及びその製造方法
JP2005252034A (ja) * 2004-03-04 2005-09-15 Sony Corp 不揮発性半導体メモリ装置とその電荷注入方法、および、電子装置
JP2007103424A (ja) * 2005-09-30 2007-04-19 Oki Electric Ind Co Ltd メモリセル及びそのメモリセルを有する半導体不揮発性メモリの構造。
TWI311796B (en) 2005-11-17 2009-07-01 Ememory Technology Inc Semiconductor device and manufacturing method thereof
JP5205011B2 (ja) * 2007-08-24 2013-06-05 ルネサスエレクトロニクス株式会社 不揮発性半導体装置およびその製造方法
JP2012059777A (ja) * 2010-09-06 2012-03-22 Renesas Electronics Corp 半導体装置およびその製造方法
US20130015516A1 (en) * 2011-07-11 2013-01-17 Kim Sang Y Asymmetrical non-volatile memory cell and method for fabricating the same
US9231097B2 (en) * 2012-02-07 2016-01-05 Mediatek Inc. HVMOS transistor structure having offset distance and method for fabricating the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004104009A (ja) * 2002-09-12 2004-04-02 Fujitsu Ltd 半導体装置及びその製造方法
US20040232475A1 (en) * 2003-05-20 2004-11-25 Kotaro Kataoka Semiconductor memory
JP2007288060A (ja) * 2006-04-19 2007-11-01 Sharp Corp 半導体記憶装置及びその製造方法、並びに携帯電子機器

Also Published As

Publication number Publication date
TW201501271A (zh) 2015-01-01
US9437736B2 (en) 2016-09-06
US20140284677A1 (en) 2014-09-25
JP6069054B2 (ja) 2017-01-25
JP2014183233A (ja) 2014-09-29

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