JP6066231B2 - ヘテロ接合型太陽電池の構造 - Google Patents
ヘテロ接合型太陽電池の構造 Download PDFInfo
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- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 54
- 239000010409 thin film Substances 0.000 claims description 37
- 229910021423 nanocrystalline silicon Inorganic materials 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 27
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 12
- 239000011701 zinc Substances 0.000 claims description 10
- 229910052738 indium Inorganic materials 0.000 claims description 8
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 8
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 7
- 229910052733 gallium Inorganic materials 0.000 claims description 7
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 6
- 229910052725 zinc Inorganic materials 0.000 claims description 6
- 239000011787 zinc oxide Substances 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 21
- 229910021419 crystalline silicon Inorganic materials 0.000 description 15
- 238000006243 chemical reaction Methods 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 238000000137 annealing Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000010521 absorption reaction Methods 0.000 description 6
- 229910052697 platinum Inorganic materials 0.000 description 6
- 238000002834 transmittance Methods 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
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Description
図2は、本発明に係るヘテロ接合型太陽電池構造2の断面を模式的に示した図である。ヘテロ接合型太陽電池構造2は、p型結晶シリコン基板20と、第1のi型アモルファスシリコン薄膜層22と、n型アモルファス酸化層24と、第1の透明導電層26とを備える。
図3は、本発明に係るヘテロ接合型太陽電池の構造の他の実施例の構造模式図を示す。この実施例において、ヘテロ接合型太陽電池構造3は、p型結晶シリコン基板30と、n型アモルファス酸化層34と、第1の透明導電層36とを備える。
図5は、本発明に係るヘテロ接合型太陽電池の構造の他の実施例の構造模式図を示す。この実施例において、ヘテロ接合型太陽電池構造5は、p型ナノ結晶シリコン層50と、第1のナノ白金線層52と、第1のn型アモルファス酸化層54aと、i型ナノ結晶シリコン薄膜層51と、第2のn型アモルファス酸化層53と、第2のナノ白金線層55とを備える。
図7は、ヘテロ接合型太陽電池の構造の他の実施例の構造模式図を示す。この実施例において、ヘテロ接合型太陽電池構造7は、n型アモルファス酸化層73と、ナノ白金線層74とを備える。
10、20、30 p型結晶シリコン基板
11、12 i型アモルファスシリコン薄膜層
13、23、33、44c、54c p型アモルファスシリコン層
14、44a n型アモルファスシリコン層
15、16、56、65 透明導電層
17、27、37 電極層
18、28、38、66、76 導電端子
21 第2のi型アモルファスシリコン薄膜層
22、31 第1のi型アモルファスシリコン薄膜層
24、34、73 n型アモルファス酸化層
25、35、43 第2の透明導電層
26、36、46 第1の透明導電層
34a n-型アモルファス酸化層
34b n+型アモルファス酸化層
40、50 p型ナノ結晶シリコン層
41a、51 i型ナノ結晶シリコン薄膜層
41b n型ナノ結晶シリコン層
42 中間反射層
44b、54b i型アモルファスシリコン薄膜層
45 白金層
48、58 ガラス基板
52 第1のナノ白金線層
53 第2のn型アモルファス酸化層
54a 第1のn型アモルファス酸化層
55 第2のナノ白金線層
60、70 基板
61、71 金属バックコンタクト層
62、72 p型吸収層
63 バッファー層
64 薄膜層
74 ナノ白金線層
101、201、301、401、501、701 背面
102、202、302、402、502、702 受光面
Claims (3)
- 受光面と前記受光面に対向する背面とを有するp型ナノ結晶シリコン層と、
前記p型ナノ結晶シリコン層の受光面に形成された第1のナノ白金線層と、
前記第1のナノ白金線層に形成された第1のn型アモルファス酸化層と、
前記ナノ結晶シリコン層の背面に形成されたi型ナノ結晶シリコン薄膜層と、
前記i型ナノ結晶シリコン薄膜層に形成された第2のn型アモルファス酸化層と、
前記第2のn型アモルファス酸化層に形成された第2のナノ白金線層と、
前記第1のn型アモルファス酸化層に形成されたi型アモルファスシリコン薄膜層と、
前記i型アモルファスシリコン薄膜層に形成されたp型アモルファスシリコン層と、
前記p型アモルファスシリコン層に形成された透明導電層と、
前記透明導電層に形成されたガラス基板と、
を備えることを特徴とするヘテロ接合型太陽電池の構造。 - 前記第1のn型アモルファス酸化層及び第2のn型アモルファス酸化層は、インジウム、ガリウム、亜鉛及び酸素からなることを特徴とする請求項1に記載のヘテロ接合型太陽電池の構造。
- 前記透明導電層は、インジウムスズ酸化物または酸化亜鉛からなることを特徴とする請求項1に記載のヘテロ接合型太陽電池の構造。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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TW102140641 | 2013-11-08 | ||
TW102140641A TWI469380B (zh) | 2013-11-08 | 2013-11-08 | 異質接面太陽電池結構 |
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JP2015159340A JP2015159340A (ja) | 2015-09-03 |
JP6066231B2 true JP6066231B2 (ja) | 2017-01-25 |
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JP2015117739A Active JP6066231B2 (ja) | 2013-11-08 | 2015-06-10 | ヘテロ接合型太陽電池の構造 |
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Country | Link |
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US (1) | US20150129025A1 (ja) |
JP (2) | JP5864660B2 (ja) |
CN (2) | CN104638048B (ja) |
DE (1) | DE102014105910A1 (ja) |
TW (1) | TWI469380B (ja) |
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CN108538937B (zh) * | 2018-06-15 | 2024-03-15 | 中山大学 | 一种太阳电池及其制备方法 |
CN115274882A (zh) * | 2022-08-04 | 2022-11-01 | 通威太阳能(合肥)有限公司 | 异质结太阳电池及其制备方法 |
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2014
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- 2014-04-17 JP JP2014085313A patent/JP5864660B2/ja active Active
- 2014-04-28 DE DE201410105910 patent/DE102014105910A1/de not_active Ceased
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CN104638048B (zh) | 2017-11-21 |
CN104638048A (zh) | 2015-05-20 |
US20150129025A1 (en) | 2015-05-14 |
CN106057916A (zh) | 2016-10-26 |
DE102014105910A1 (de) | 2015-05-13 |
JP5864660B2 (ja) | 2016-02-17 |
JP2015159340A (ja) | 2015-09-03 |
TWI469380B (zh) | 2015-01-11 |
CN106057916B (zh) | 2017-12-08 |
TW201519461A (zh) | 2015-05-16 |
JP2015095648A (ja) | 2015-05-18 |
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