JP6066208B2 - スイッチング及び整流のための高電子移動度トランジスタを含む電力変換回路 - Google Patents
スイッチング及び整流のための高電子移動度トランジスタを含む電力変換回路 Download PDFInfo
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- JP6066208B2 JP6066208B2 JP2013519788A JP2013519788A JP6066208B2 JP 6066208 B2 JP6066208 B2 JP 6066208B2 JP 2013519788 A JP2013519788 A JP 2013519788A JP 2013519788 A JP2013519788 A JP 2013519788A JP 6066208 B2 JP6066208 B2 JP 6066208B2
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- 238000006243 chemical reaction Methods 0.000 title claims description 47
- 239000004065 semiconductor Substances 0.000 claims description 55
- 230000005669 field effect Effects 0.000 claims description 13
- 230000005684 electric field Effects 0.000 claims description 6
- 229910002601 GaN Inorganic materials 0.000 description 20
- 239000010410 layer Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 5
- 229910002704 AlGaN Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 230000002441 reversible effect Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/74—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of diodes
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/33507—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of the output voltage or current, e.g. flyback converters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0003—Details of control, feedback or regulation circuits
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
- Rectifiers (AREA)
- Junction Field-Effect Transistors (AREA)
Description
本発明は、海軍研究事務所契約番号第05−C−0226号のもとの政府支援によって行われた。政府は本発明において一定の権利を有している。
さらに他の実施形態において、半導体ダイオードはホットキャリア・ダイオードである。
さらに他の実施形態において、半導体ダイオードはショットキー・ダイオードを含む。
さらに他の実施形態において、半導体ダイオードはシリコン・ショットキー・ダイオードを含む。
さらに他の実施形態において、第2のHEMTは少なくとも1つのヘテロ接合を導電性チャネルとして含む。
さらに他の実施形態において、電力変換回路は直流−直流(DC−DC)電力変換回路であり、スイッチは共振スイッチング・モードで動作可能である。
さらに他の実施形態において、磁界蓄積コンポーネントはインダクタ及び/又は変圧器を含む。
さらに他の実施形態において、蓄積コンポーネントは電界蓄積コンポーネントを含む。
さらに他の実施形態において、電界蓄積コンポーネントはコンデンサを含む。
さらに別の実施形態において、電力変換回路は約600Vまでの電圧で動作する。
さらに他の実施形態において、電力変換回路は約600Vまでの電圧で動作する。
110:電源
120:変換回路
130:負荷
140:スイッチ
150:整流コンポーネント
160:蓄積コンポーネント
200:整流回路
202:デプレッション・モード半導体(FET)
204:ホットキャリア半導体ダイオード
206:アノード
208:カソード
210:整流器カソード
212:ソース・ノード
213:ドレイン・ノード
214:ゲート・ノード
220:整流器アノード
300:ブーストDC−DC電力変換回路
Claims (7)
- 蓄積コンポーネントと、
第1の電界効果トランジスタを含み、第1及び第2のバイアス状態を有し、前記第1の電界効果トランジスタのソース・ノードに接続されたカソードと、前記第1の電界効果トランジスタのゲート・ノードに接続されたアノードとを有する半導体ダイオードをさらに含み、前記蓄積コンポーネントと接続された整流コンポーネントと、
第2の電界効果トランジスタを含み、第1及び第2の動作状態を有し、前記蓄積コンポーネント及び前記整流コンポーネントと接続されたスイッチと、を含み、
前記第1及び第2の電界効果トランジスタは、それぞれ、第1及び第2の高電子移動度トランジスタ(HEMT)を含み、
共振スイッチング動作モードで動作するときに約10MHz乃至100MHzの範囲内のスイッチング周波数を有し、かつ少なくとも約95%の効率を有し、
ハードスイッチング動作モードで動作するときに約1MHz乃至10MHzの範囲内のスイッチング周波数を有し、かつ少なくとも約95%の効率を有し、
約600Vまでの電圧で動作することを特徴とする電力変換回路。 - 前記スイッチが前記第1の動作状態に構成され、前記整流コンポーネントが前記第1のバイアス状態にあるとき、電源からのエネルギーが前記蓄積コンポーネント内に蓄積され、前記スイッチが前記第2の動作状態に構成され、前記整流コンポーネントが前記第2のバイアス状態にあるとき、前記蓄積コンポーネント内に蓄積されたエネルギーが負荷に放出されることを特徴とする、請求項1に記載の電力変換回路。
- 前記蓄積コンポーネントは磁界蓄積コンポーネントを含むことを特徴とする、請求項1に記載の電力変換回路。
- 前記蓄積コンポーネントは電界蓄積コンポーネントを含むことを特徴とする、請求項1に記載の電力変換回路。
- 前記第1及び第2のHEMTは、第1及び第2のGaN HEMTを含むことを特徴とする、請求項1に記載の電力変換回路。
- 前記半導体ダイオードは、ホットキャリア・ダイオードであることを特徴とする、請求項1に記載の電力変換回路。
- 前記半導体ダイオードは、SiC半導体ダイオードであることを特徴とする、請求項1に記載の電力変換回路。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/837,092 US8847563B2 (en) | 2010-07-15 | 2010-07-15 | Power converter circuits including high electron mobility transistors for switching and rectifcation |
US12/837,092 | 2010-07-15 | ||
PCT/US2011/043813 WO2012009410A1 (en) | 2010-07-15 | 2011-07-13 | Power converter circuits including high electron mobility transistors for switching and rectification |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013532934A JP2013532934A (ja) | 2013-08-19 |
JP6066208B2 true JP6066208B2 (ja) | 2017-01-25 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013519788A Active JP6066208B2 (ja) | 2010-07-15 | 2011-07-13 | スイッチング及び整流のための高電子移動度トランジスタを含む電力変換回路 |
Country Status (4)
Country | Link |
---|---|
US (2) | US8847563B2 (ja) |
EP (1) | EP2594016A4 (ja) |
JP (1) | JP6066208B2 (ja) |
WO (1) | WO2012009410A1 (ja) |
Families Citing this family (14)
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US8847563B2 (en) * | 2010-07-15 | 2014-09-30 | Cree, Inc. | Power converter circuits including high electron mobility transistors for switching and rectifcation |
JP2012065443A (ja) * | 2010-09-15 | 2012-03-29 | Panasonic Corp | コンバータ回路 |
JP2013004750A (ja) * | 2011-06-16 | 2013-01-07 | Fujitsu Ltd | 化合物半導体装置及びその製造方法 |
KR20130004707A (ko) * | 2011-07-04 | 2013-01-14 | 삼성전기주식회사 | 질화물 반도체 소자, 질화물 반도체 소자의 제조방법 및 질화물 반도체 파워소자 |
US9147701B2 (en) * | 2011-09-22 | 2015-09-29 | Raytheon Company | Monolithic InGaN solar cell power generation with integrated efficient switching DC-DC voltage convertor |
US8570012B2 (en) * | 2011-12-13 | 2013-10-29 | Texas Instruments Incorporated | Diode for use in a switched mode power supply |
TW201338348A (zh) * | 2012-03-01 | 2013-09-16 | Hon Hai Prec Ind Co Ltd | 不間斷電源系統 |
CN103684002B (zh) | 2012-09-24 | 2016-12-21 | 通用电气公司 | 能量转换系统 |
JP2014158352A (ja) * | 2013-02-15 | 2014-08-28 | Toshiba Lighting & Technology Corp | 整流回路 |
US9647725B1 (en) * | 2013-04-02 | 2017-05-09 | Marvell International Ltd. | Wireless power interface using an NFC antenna |
JP2015065767A (ja) * | 2013-09-25 | 2015-04-09 | 東芝ライテック株式会社 | 整流回路、電子回路及び電子機器 |
FR3036897B1 (fr) | 2015-05-29 | 2018-06-15 | Wupatec | Bloc convertisseur continu-continu, convertisseur continu-continu le comprenant et systeme de suivi d'enveloppe associe |
US9991776B2 (en) | 2015-12-16 | 2018-06-05 | Semiconductor Components Industries, Llc | Switched mode power supply converter |
EP4029139A4 (en) | 2019-09-13 | 2023-09-27 | Milwaukee Electric Tool Corporation | CURRENT TRANSFORMER WITH WIDE BANDGAP SEMICONDUCTORS |
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-
2010
- 2010-07-15 US US12/837,092 patent/US8847563B2/en active Active
-
2011
- 2011-07-13 JP JP2013519788A patent/JP6066208B2/ja active Active
- 2011-07-13 EP EP11807435.0A patent/EP2594016A4/en not_active Ceased
- 2011-07-13 WO PCT/US2011/043813 patent/WO2012009410A1/en active Application Filing
-
2014
- 2014-09-29 US US14/499,760 patent/US9467038B2/en active Active
Also Published As
Publication number | Publication date |
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EP2594016A1 (en) | 2013-05-22 |
US8847563B2 (en) | 2014-09-30 |
EP2594016A4 (en) | 2014-10-01 |
JP2013532934A (ja) | 2013-08-19 |
US9467038B2 (en) | 2016-10-11 |
US20150049514A1 (en) | 2015-02-19 |
US20120074920A1 (en) | 2012-03-29 |
WO2012009410A1 (en) | 2012-01-19 |
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