JP6065581B2 - Power semiconductor module and manufacturing method thereof - Google Patents

Power semiconductor module and manufacturing method thereof Download PDF

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JP6065581B2
JP6065581B2 JP2012282419A JP2012282419A JP6065581B2 JP 6065581 B2 JP6065581 B2 JP 6065581B2 JP 2012282419 A JP2012282419 A JP 2012282419A JP 2012282419 A JP2012282419 A JP 2012282419A JP 6065581 B2 JP6065581 B2 JP 6065581B2
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aluminum wire
resin
wire
power element
control
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JP2014127561A (en
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茂雄 吉崎
茂雄 吉崎
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Sanken Electric Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/4901—Structure
    • H01L2224/4903—Connectors having different sizes, e.g. different diameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]

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Description

本発明は、パワー素子および制御ＩＣを封止樹脂内に有するパワー半導体モジュールおよびその製造方法に関する。   The present invention relates to a power semiconductor module having a power element and a control IC in a sealing resin, and a manufacturing method thereof.

パワー素子および制御ＩＣを樹脂封止してなるパワー半導体モジュール（パワーモジュール）が広く知られている。   A power semiconductor module (power module) in which a power element and a control IC are sealed with a resin is widely known.

パワー半導体モジュールでは、パワー素子とリードとの接続を太径のワイヤ（アルミワイヤ）で配線し、制御ＩＣとリードとの接続を細径のワイヤ（金ワイヤ）で配線し、これらを樹脂封止している（例えば、特許文献１参照）。   In the power semiconductor module, the connection between the power element and the lead is wired with a large diameter wire (aluminum wire), the connection between the control IC and the lead is wired with a thin diameter wire (gold wire), and these are sealed with resin (For example, refer to Patent Document 1).

特許３３３８０６３号公報Japanese Patent No. 3338063

しかし、従来では、パワー素子および制御ＩＣを樹脂で封止する際、流動樹脂によって細径の金ワイヤに変形が生じると、金ワイヤ同士の短絡などの不具合が生じる懸念がある。   However, conventionally, when the power element and the control IC are sealed with a resin, if the thin gold wire is deformed by the flowing resin, there is a concern that a defect such as a short circuit between the gold wires may occur.

本発明は上記課題に鑑みてなされたものであり、制御ＩＣに接続された金ワイヤの変形を抑えることができるパワー半導体モジュールおよびその製造方法を提供することを課題とする。   This invention is made | formed in view of the said subject, and makes it a subject to provide the power semiconductor module which can suppress a deformation | transformation of the gold wire connected to control IC, and its manufacturing method.

上記課題を解決するために、本発明に係るパワー半導体モジュールは、基板上の所定位置に配置されたパワー素子と、前記パワー素子と前記パワー素子に電力を供給する電力供給部とを接続するアルミワイヤと、前記基板上の所定位置に配置された制御ＩＣと、前記制御ＩＣと前記基板のリードとを接続する金ワイヤと、を封止樹脂内に備え、前記アルミワイヤの配置位置が、前記封止樹脂を形成するために注入した樹脂の流動を前記金ワイヤに対してブロックする位置にされていることを特徴とする。   In order to solve the above-described problems, a power semiconductor module according to the present invention includes a power element disposed at a predetermined position on a substrate, and an aluminum connecting the power element and a power supply unit that supplies power to the power element. A wire, a control IC disposed at a predetermined position on the substrate, and a gold wire connecting the control IC and a lead of the substrate in a sealing resin, and the position of the aluminum wire is It is characterized in that it is in a position to block the flow of the resin injected to form the sealing resin with respect to the gold wire.

また、本発明に係るパワー半導体モジュールの製造方法は、基板上にパワー素子と制御ＩＣとを配置して樹脂封止するパワー半導体モジュールの製造方法であって、前記パワー素子と前記制御ＩＣとを前記基板上の所定位置にそれぞれ配置する素子配置工程と、前記制御ＩＣと前記基板のリードとを金ワイヤで接続するとともに、前記パワー素子と前記パワー素子に電力を供給する電力供給部とをアルミワイヤで接続するワイヤ接続工程と、前記パワー素子、前記制御ＩＣ、前記アルミワイヤ、および、前記金ワイヤを樹脂封止する封止工程と、を備え、前記ワイヤ接続工程では、前記アルミワイヤの配置位置を、樹脂封止するために注入した樹脂の流動を前記金ワイヤに対してブロックする位置とすることを特徴とする。   A method for manufacturing a power semiconductor module according to the present invention is a method for manufacturing a power semiconductor module in which a power element and a control IC are arranged on a substrate and resin-sealed, and the power element and the control IC are An element arranging step for arranging the power IC at a predetermined position on the substrate, the control IC and a lead of the substrate are connected by a gold wire, and the power element and a power supply unit for supplying power to the power element are formed of aluminum. A wire connecting step for connecting with a wire; and a sealing step for resin-sealing the power element, the control IC, the aluminum wire, and the gold wire. In the wire connecting step, the placement of the aluminum wire The position is a position where the flow of the resin injected for resin sealing is blocked with respect to the gold wire.

本発明によれば、制御ＩＣに接続された金ワイヤの変形を抑えることができるパワー半導体モジュールおよびその製造方法を提供することができる。   ADVANTAGE OF THE INVENTION According to this invention, the power semiconductor module which can suppress the deformation | transformation of the gold wire connected to control IC, and its manufacturing method can be provided.

図１（ａ）〜（ｄ）は、それぞれ、本発明の一実施形態のパワー半導体モジュールの平面図、側面図（第１側面図）、背面図、および、リード突出側の側面図（第２側面図）である（図１（ｃ）では、簡明化のため、封止樹脂から突出したリードを省略して描いている）。1A to 1D are a plan view, a side view (first side view), a rear view, and a side view (second view) of a lead protrusion side, respectively, of a power semiconductor module according to an embodiment of the present invention. (In FIG. 1C, the lead protruding from the sealing resin is omitted for simplification). 第１実施形態で、樹脂封止する際にゲートからキャビティ内（金型内）に流動樹脂を注入することを説明する模式的な平面図である。In 1st Embodiment, when resin-sealing, it is a typical top view explaining pouring fluid resin into a cavity (inside a metallic mold) from a gate. 第１実施形態で、樹脂封止する際にゲートからキャビティ内（金型内）に流動樹脂を注入することを説明する模式的な側面図である（簡明化のため、第２アルミワイヤの描画を省略している）。FIG. 5 is a schematic side view for explaining that the fluid resin is injected from the gate into the cavity (inside the mold) when sealing with resin in the first embodiment (for the sake of simplicity, drawing of the second aluminum wire) Is omitted). 第１実施形態で、パワー半導体モジュールの変形例を説明する模式的な平面図である。It is a typical top view explaining a modification of a power semiconductor module in a 1st embodiment. 第１実施形態で、パワー半導体モジュールの変形例を説明する模式的な平面図である。It is a typical top view explaining a modification of a power semiconductor module in a 1st embodiment. 第２実施形態で、樹脂封止する際にゲートからキャビティ内（金型内）に流動樹脂を注入することを説明する模式的な平面図である。In 2nd Embodiment, when resin sealing, it is a typical top view explaining pouring fluid resin into a cavity (inside a metallic mold) from a gate.

以下、添付図面を参照して、本発明の実施の形態について説明する。以下の説明では、すでに説明したものと同一または類似の構成要素には同一または類似の符号を付し、その詳細な説明を適宜省略している。   Embodiments of the present invention will be described below with reference to the accompanying drawings. In the following description, the same or similar components as those already described are denoted by the same or similar reference numerals, and detailed description thereof is omitted as appropriate.

また、図面は模式的なものであり、寸法比などは現実のものとは異なることに留意すべきである。従って、具体的な寸法比などは以下の説明を参酌して判断すべきものである。又、図面相互間においても互いの寸法の関係や比率が異なる部分が含まれていることはもちろんである。   In addition, it should be noted that the drawings are schematic and the dimensional ratios and the like are different from actual ones. Therefore, specific dimensional ratios and the like should be determined in consideration of the following description. Moreover, it is a matter of course that portions having different dimensional relationships and ratios are included between the drawings.

また、以下に示す実施の形態は、この発明の技術的思想を具体化するための例示であって、この発明の実施の形態は、構成部品の材質、形状、構造、配置等を下記のものに特定するものではない。この発明の実施の形態は、要旨を逸脱しない範囲内で種々変更して実施できる。   The following embodiments are exemplifications for embodying the technical idea of the present invention, and the embodiments of the present invention are described below in terms of the material, shape, structure, arrangement, etc. of the components. It is not something specific. The embodiments of the present invention can be implemented with various modifications without departing from the scope of the invention.

［第１実施形態］
まず、第１実施形態について説明する。図１（ａ）〜（ｄ）は、それぞれ、本実施形態のパワー半導体モジュールの平面図、側面図（第１側面図）、背面図、および、リード突出側の側面図（第２側面図）である。図２は、本実施形態で、樹脂封止する際にゲートからキャビティ内（金型内）に流動樹脂を注入することを説明する模式的な平面図である。図３は、本実施形態で、樹脂封止する際にゲートからキャビティ内（金型内）に流動樹脂を注入することを説明する模式的な側面図である。 [First Embodiment]
First, the first embodiment will be described. 1A to 1D are a plan view, a side view (first side view), a rear view, and a side view (second side view) of a lead protrusion side, respectively, of the power semiconductor module of the present embodiment. It is. FIG. 2 is a schematic plan view for explaining that the flowable resin is injected from the gate into the cavity (inside the mold) when resin sealing is performed in the present embodiment. FIG. 3 is a schematic side view for explaining that the flowable resin is injected from the gate into the cavity (inside the mold) when resin sealing is performed in the present embodiment.

本実施形態のパワー半導体モジュール１０では、封止樹脂１２からリード１４ａ〜ｆが突出している。そして、基板１６上の所定位置に配置されたパワー素子１８（ＭＯＳ、ＩＧＢＴなど）と、パワー素子１８とリード１４ａとを接続する第１アルミワイヤ２０ｐおよび第２アルミワイヤ２０ｑと、基板１６上の所定位置に配置された制御ＩＣ（制御素子）２２と、制御ＩＣ２２とリード１４ｃ〜ｆとをそれぞれ接続する金ワイヤ２４ｃ〜ｆと、を封止樹脂１２内に備えている。また、制御ＩＣ２２とパワー素子１８とがゲートワイヤ２６で接続されている。制御ＩＣ２２は電気絶縁性の樹脂で基板上に接着されており、パワー素子１８ははんだ付けで基板１６に実装されている。   In the power semiconductor module 10 of the present embodiment, the leads 14 a to 14 f protrude from the sealing resin 12. A power element 18 (MOS, IGBT, etc.) disposed at a predetermined position on the substrate 16, a first aluminum wire 20 p and a second aluminum wire 20 q that connect the power element 18 and the lead 14 a, A control IC (control element) 22 disposed at a predetermined position, and gold wires 24c to f for connecting the control IC 22 and the leads 14c to f, respectively, are provided in the sealing resin 12. Further, the control IC 22 and the power element 18 are connected by a gate wire 26. The control IC 22 is bonded on the substrate with an electrically insulating resin, and the power element 18 is mounted on the substrate 16 by soldering.

本実施形態では、アルミワイヤはパワー素子１８への電力供給用に２本配置されている。そして、パワー素子１８の電極１８ｕ面における第１アルミワイヤ２０ｐの配置位置は、封止樹脂１２を形成するために注入した樹脂の流動を金ワイヤ２４に対してブロックする位置にされている。具体的に説明すると、パワー素子１８における制御ＩＣ２２に近い側部１８ｓの角部のうち上記流動の上流側となるＩＣ側上流角部１８ｋに接続された第１アルミワイヤ２０ｐと、ＩＣ側上流角部１８ｋに対して対角となる対角側角部１８ｊに接続された第２アルミワイヤ２０ｑと、が設けられている。そして、封止樹脂１２を形成するために注入した樹脂が、パワー素子１８のＩＣ側上流角部１８ｋで第１アルミワイヤ２０ｐに当たってパワー素子１８の対角側角部１８ｊに向けて流動することで、流動樹脂がゲートＧ１から金ワイヤ２４に直接に到達して金ワイヤ２４を変形させることは回避される構造になっている。パワー素子１８および制御ＩＣ２２の上記所定位置は、このような回避がなされるように配慮して設定された位置である。なお、本明細書では、「パワー素子の角部」の領域（範囲）は、パワー素子を角部毎に等分した各領域（例えば、パワー素子が平面視で長方形状なら、各角部をそれぞれ含む四等分した各領域）をいう。   In the present embodiment, two aluminum wires are arranged for supplying power to the power element 18. And the arrangement position of the 1st aluminum wire 20p in the electrode 18u surface of the power element 18 is made into the position which blocks the flow of the resin inject | poured in order to form the sealing resin 12 with respect to the gold wire 24. FIG. More specifically, the first aluminum wire 20p connected to the IC-side upstream corner 18k that is the upstream side of the flow among the corners of the side 18s near the control IC 22 in the power element 18, and the IC-side upstream angle A second aluminum wire 20q connected to the diagonal side corner portion 18j that is diagonal to the portion 18k is provided. Then, the resin injected to form the sealing resin 12 strikes the first aluminum wire 20p at the IC-side upstream corner 18k of the power element 18 and flows toward the diagonal corner 18j of the power element 18. The structure is such that the flowing resin directly reaches the gold wire 24 from the gate G1 and deforms the gold wire 24. The predetermined positions of the power element 18 and the control IC 22 are positions set in consideration of such avoidance. In the present specification, the region (range) of the “corner portion of the power element” refers to each region obtained by equally dividing the power element for each corner portion (for example, if the power element is rectangular in plan view, each corner portion is Each quadrant containing each).

図３に示すように、第１アルミワイヤ２０ｐは、ＩＣ側上流角部１８ｋに、パワー素子１８の電極１８ｕ面（図示せず）に平行な接続部２０ｐ１で接続されている。そして、第１アルミワイヤ２０ｐは、接続部２０ｐ１から斜め上方向（基板表面から離れる方向）に曲げられて延び出し、水平方向（基板表面に平行な方向）に向くように曲げられ、更に斜め下方向（基板表面に近づく方向）に曲げられ、リード１４ａに平行な接続部２０ｐ２でリード１４ａに接続されている。第２アルミワイヤ２０ｑも同様である。   As shown in FIG. 3, the first aluminum wire 20 p is connected to the IC-side upstream corner 18 k through a connection portion 20 p 1 parallel to the electrode 18 u surface (not shown) of the power element 18. The first aluminum wire 20p is bent and extended from the connecting portion 20p1 in an obliquely upward direction (a direction away from the substrate surface), is bent so as to be directed in a horizontal direction (a direction parallel to the substrate surface), and further obliquely downward It is bent in a direction (direction approaching the substrate surface) and connected to the lead 14a by a connecting portion 20p2 parallel to the lead 14a. The same applies to the second aluminum wire 20q.

そして、本実施形態では、ＩＣ側上流角部１８ｋとリード１４ａとの距離が、対角側角部１８ｊとリード１４ａとの距離よりも長いため、第１アルミワイヤ２０ｐの長さが、第２アルミワイヤ２０ｑに比べて長い。   In this embodiment, since the distance between the IC-side upstream corner 18k and the lead 14a is longer than the distance between the diagonal-side corner 18j and the lead 14a, the length of the first aluminum wire 20p is the second length. Longer than aluminum wire 20q.

ゲートワイヤ２６および金ワイヤ２４は第１アルミワイヤ２０ｐや第２アルミワイヤ２０ｑに比べて細い。一例としては、第１アルミワイヤ２０ｐや第２アルミワイヤ２０ｑの径は何れも３００〜５００μｍの範囲であり、金ワイヤ２４ｃ〜ｆの径は何れも３０〜５０μｍの範囲である。   The gate wire 26 and the gold wire 24 are thinner than the first aluminum wire 20p and the second aluminum wire 20q. As an example, the diameters of the first aluminum wire 20p and the second aluminum wire 20q are all in the range of 300 to 500 μm, and the diameters of the gold wires 24c to f are all in the range of 30 to 50 μm.

（作用、効果）
以下、本実施形態の作用、効果について説明する。図３に示すように、本実施形態では、キャビティ内で流動樹脂が効果的に押し上げられるように、ゲートＧ１の高さ位置は、第１アルミワイヤ２０ｐの接続部２０ｐ１の高さ位置ｈ以下とされている。 (Function, effect)
Hereinafter, the operation and effect of the present embodiment will be described. As shown in FIG. 3, in this embodiment, the height position of the gate G1 is equal to or less than the height position h of the connecting portion 20p1 of the first aluminum wire 20p so that the fluid resin is effectively pushed up in the cavity. Has been.

パワー半導体モジュール１０を製造するには、まず、パワー素子１８と制御ＩＣ２２とを基板１６上の所定位置にそれぞれ配置する素子配置工程を行う。本実施形態では、図２に示すように、樹脂封止する際に用いる金型のゲートＧ１は、キャビティの角部に開口している。本実施形態では、パワー素子１８および制御ＩＣ２２を基板１６上に配置する際、基板１６を金型内に配置したときにゲートＧ１に近い側となる所定位置にパワー素子１８を配置し、基板１６を金型内に配置したときにゲートＧ１からパワー素子１８を越えた位置となる所定位置に制御ＩＣ２２を配置する。   In order to manufacture the power semiconductor module 10, first, an element arrangement process is performed in which the power element 18 and the control IC 22 are arranged at predetermined positions on the substrate 16. In the present embodiment, as shown in FIG. 2, the gate G1 of the mold used for resin sealing is opened at the corner of the cavity. In the present embodiment, when the power element 18 and the control IC 22 are disposed on the substrate 16, the power element 18 is disposed at a predetermined position on the side closer to the gate G1 when the substrate 16 is disposed in the mold. The control IC 22 is disposed at a predetermined position that is a position beyond the power element 18 from the gate G1 when it is disposed in the mold.

次に、制御ＩＣ２２とリード１４ｃ〜ｆとをそれぞれ金ワイヤ２４ｃ〜ｆで接続するとともに、パワー素子１８とリード１４ａとを第１アルミワイヤ２０ｐおよび第２アルミワイヤ２０ｑで接続するワイヤ接続工程を行う。このワイヤ接続工程では、第１アルミワイヤ２０ｐおよび第２アルミワイヤ２０ｑの配置位置を、樹脂封止するために注入した樹脂の流動を金ワイヤ２４に対してブロックする位置とする。具体的には、第１アルミワイヤ２０ｐをパワー素子１８のＩＣ側上流角部１８ｋに接続し、第２アルミワイヤ２０ｑをパワー素子１８の対角側角部１８ｊに接続する。また、制御ＩＣ２２とパワー素子１８とをゲートワイヤ２６で接続する。   Next, the control IC 22 and the leads 14c to f are connected by the gold wires 24c to f, respectively, and the wire connecting step of connecting the power element 18 and the lead 14a by the first aluminum wire 20p and the second aluminum wire 20q is performed. . In this wire connection step, the arrangement positions of the first aluminum wire 20p and the second aluminum wire 20q are set to positions where the flow of the resin injected for resin sealing is blocked with respect to the gold wire 24. Specifically, the first aluminum wire 20p is connected to the IC-side upstream corner 18k of the power element 18, and the second aluminum wire 20q is connected to the diagonal-side corner 18j of the power element 18. Further, the control IC 22 and the power element 18 are connected by a gate wire 26.

その後、金型内に基板１６をセットし、樹脂注入してパワー素子１８および制御ＩＣ２２を樹脂封止する封止工程を行う。   Thereafter, a sealing step is performed in which the substrate 16 is set in a mold, and the power element 18 and the control IC 22 are resin-sealed by resin injection.

この封止工程では、ゲートＧ１から注入された流動性の樹脂は、キャビティ内でＩＣ側上流角部１８ｋに到達しても、そのまま直接に金ワイヤ２４（特に金ワイヤ２４ｃ）に向けて流れることは第１アルミワイヤ２０ｐによって防止され、対角側角部１８ｊに向けて流れるように流動方向が変更される。従って、金ワイヤ２４が流動樹脂によって変形していわゆるつぶれが生じることを、部品点数を増やすことなく効果的に防止することができる。   In this sealing step, the fluid resin injected from the gate G1 flows directly toward the gold wire 24 (particularly, the gold wire 24c) as it is even if it reaches the IC-side upstream corner 18k in the cavity. Is prevented by the first aluminum wire 20p, and the flow direction is changed so as to flow toward the diagonal corner 18j. Therefore, it is possible to effectively prevent the gold wire 24 from being deformed by the flowing resin and causing so-called crushing without increasing the number of parts.

ここで、図２に示すように、第１アルミワイヤ２０ｐのゲート側の端部である接続部２０ｐ１に到達した流動樹脂は、矢印Ｄに示すように、ゲートワイヤ２６により制御ＩＣ２２のゲート側の縁部２２ｔに案内される。そして、リード１４ｃ〜ｆに向けて流れ、金ワイヤ２４ｃ〜ｆの周囲では金ワイヤ２４ｃ〜ｆにほぼ沿った方向に流れる。従って、従来のように流動樹脂が金ワイヤ２４ｃ〜ｆ（特に金ワイヤ２４ｃ）に側方から直接に当たることが回避されている。   Here, as shown in FIG. 2, the flowing resin that has reached the connecting portion 20p1 that is the end portion on the gate side of the first aluminum wire 20p is moved to the gate side of the control IC 22 by the gate wire 26 as shown by an arrow D. Guided to the edge 22t. And it flows toward the leads 14c to f and flows in a direction substantially along the gold wires 24c to f around the gold wires 24c to f. Therefore, it is avoided that the fluid resin directly hits the gold wires 24c to f (particularly, the gold wire 24c) from the side as in the prior art.

また、第１アルミワイヤ２０ｐがＩＣ側上流角部１８ｋに接続され、第２アルミワイヤ２０ｑが対角側角部１８ｊに接続されているので、このような流動方向の変更を第１アルミワイヤ２０ｐによって効率的に行うことができている。   In addition, since the first aluminum wire 20p is connected to the IC-side upstream corner 18k and the second aluminum wire 20q is connected to the diagonal-side corner 18j, such a change in the flow direction is changed to the first aluminum wire 20p. Can be done efficiently.

また、第１アルミワイヤ２０ｐの長さは第２アルミワイヤ２０ｑよりも長い。従って、第１アルミワイヤ２０ｐと第２アルミワイヤ２０ｑの線径が同じであっても、第１アルミワイヤ２０ｐの電気抵抗が第２アルミワイヤ２０ｑよりも大きいので、第１アルミワイヤ２０ｐに流れる電流は第２アルミワイヤ２０ｑに流れる電流よりも少ない。よって、第１アルミワイヤ２０ｐが接続されているＩＣ側上流角部１８ｋで温度が上昇することを抑えることができるので、パワー素子１８の発熱による制御ＩＣ２２の温度上昇を抑えることができる。   The length of the first aluminum wire 20p is longer than that of the second aluminum wire 20q. Accordingly, even if the wire diameters of the first aluminum wire 20p and the second aluminum wire 20q are the same, the electric resistance of the first aluminum wire 20p is larger than that of the second aluminum wire 20q, so that the current flowing through the first aluminum wire 20p Is less than the current flowing through the second aluminum wire 20q. Therefore, the temperature rise at the IC-side upstream corner 18k to which the first aluminum wire 20p is connected can be suppressed, and the temperature increase of the control IC 22 due to the heat generated by the power element 18 can be suppressed.

また、電極１８ｕ面上で第１アルミワイヤ２０ｐの接続位置と第２アルミワイヤ２０ｑの接続位置とが効率良く離れているので、パワー半導体モジュール１０の使用時に、パワー素子１８に局部的に電流集中が生じることを効率良く防止でき、パワー素子１８での電流のＯＮ抵抗（入力抵抗）を効果的に抑えることができる。   Further, since the connection position of the first aluminum wire 20p and the connection position of the second aluminum wire 20q are efficiently separated on the surface of the electrode 18u, current concentration is locally concentrated on the power element 18 when the power semiconductor module 10 is used. Can be efficiently prevented, and the ON resistance (input resistance) of the current in the power element 18 can be effectively suppressed.

なお、図４に示すように、制御ＩＣ２２のゲート側の縁部２２ｔの流動樹脂に対する上流側に、流動樹脂の流入を防止するブロック材２８を配置してもよい。これにより、金ワイヤ２４のつぶれ防止を更に効果的に行うことができる。ブロック材２８としては、ダミー用のアルミワイヤであってもよい。   In addition, as shown in FIG. 4, you may arrange | position the block material 28 which prevents inflow of fluid resin in the upstream with respect to fluid resin of the edge part 22t by the side of the gate of control IC22. Thereby, the collapse of the gold wire 24 can be more effectively prevented. The block material 28 may be a dummy aluminum wire.

また、パワー半導体モジュール１０は、パワー半導体モジュール１０の裏面側にパワー素子１８を露出させるように封止樹脂１２で封止したハーフモールドのモジュールであってもよいし、パワー素子１８を封止樹脂１２内に内包したフルモールドのモジュールであってもよい。   The power semiconductor module 10 may be a half-molded module sealed with the sealing resin 12 so that the power element 18 is exposed on the back side of the power semiconductor module 10, or the power element 18 may be sealed with the sealing resin. The module of the full mold enclosed in 12 may be sufficient.

また、図５に示すように、第２アルミワイヤ２０ｑの端部であってパワー素子１８の電極１８ｕ面との接続部２０ｑ１の側に延長部３０を設けることで、ゲートＧ１から注入された流動樹脂が、制御ＩＣ２２のゲート側の縁部２２ｔに案内される構成にしてもよい。これにより、本実施形態と同様、流動樹脂が金ワイヤ２４ｃ〜ｆ（特に金ワイヤ２４ｃ）に側方から直接に当たることが回避されるので、金ワイヤ２４が流動樹脂によって変形していわゆるつぶれが生じることが防止される。この場合、第１アルミワイヤ２０ｐがＩＣ側上流角部１８ｋにまで延びていない構成にしてもよい。   In addition, as shown in FIG. 5, by providing an extension 30 on the end of the second aluminum wire 20q on the side of the connection 20q1 with the electrode 18u surface of the power element 18, the flow injected from the gate G1 The resin may be guided to the edge 22t on the gate side of the control IC 22. As a result, as in this embodiment, the fluid resin is prevented from directly hitting the gold wires 24c to f (particularly the gold wire 24c) from the side, so that the gold wire 24 is deformed by the fluid resin and the so-called crushing occurs. It is prevented. In this case, the first aluminum wire 20p may be configured not to extend to the IC-side upstream corner 18k.

［第２実施形態］
次に、第２実施形態について説明する。図６は、本実施形態で、樹脂封止する際にゲートからキャビティ内（金型内）に流動樹脂を注入することを説明する模式的な平面図である。 [Second Embodiment]
Next, a second embodiment will be described. FIG. 6 is a schematic plan view for explaining that the fluid resin is injected from the gate into the cavity (inside the mold) when resin sealing is performed in the present embodiment.

本実施形態のパワー半導体モジュールでは、封止樹脂４２から突出するリード４４ａ〜ｆを備えている。そして、基板４６上の所定位置に配置されたパワー素子４８（ＭＯＳ、ＩＧＢＴなど）と、パワー素子４８の電極（図示せず）と基板４６上の配線４９とを接続するアルミワイヤ５０と、基板４６上の所定位置に配置された制御ＩＣ（制御素子）５２と、制御ＩＣ５２とリード４４ａ〜ｅとをそれぞれ接続する金ワイヤ５４ａ〜ｅと、を封止樹脂４２内に備えている。また、制御ＩＣ５２とパワー素子４８とが複数本の金ワイヤ５６ａ〜ｄで接続されている。   The power semiconductor module of this embodiment includes leads 44 a to 44 f that protrude from the sealing resin 42. A power element 48 (MOS, IGBT, etc.) arranged at a predetermined position on the substrate 46, an aluminum wire 50 connecting an electrode (not shown) of the power element 48 and the wiring 49 on the substrate 46, a substrate The sealing resin 42 is provided with a control IC (control element) 52 disposed at a predetermined position on 46, and gold wires 54a to 54e connecting the control IC 52 and the leads 44a to 44e, respectively. Further, the control IC 52 and the power element 48 are connected by a plurality of gold wires 56a to 56d.

パワー素子４８は第１実施形態のパワー素子１８と同等の性能を有しており、制御ＩＣ５２は第１実施形態の制御ＩＣ２２と同等の性能を有する。アルミワイヤ５０は、第１アルミワイヤ２０ｐや第２アルミワイヤ２０ｑと同様、パワー素子４８への接続部５０ｐ１から斜め上方向に曲げられて延び出し、水平方向に向くように曲げられ、更に斜め下方向に曲げられ、配線４９に平行なように曲げられてなる接続部５０ｐ２で配線４９に接続されている。   The power element 48 has a performance equivalent to that of the power element 18 of the first embodiment, and the control IC 52 has a performance equivalent to that of the control IC 22 of the first embodiment. Similar to the first aluminum wire 20p and the second aluminum wire 20q, the aluminum wire 50 is bent and extended obliquely upward from the connecting portion 50p1 to the power element 48, bent to face the horizontal direction, and further obliquely below It is bent in the direction and connected to the wiring 49 by a connecting portion 50 p 2 that is bent so as to be parallel to the wiring 49.

アルミワイヤ５０の配置位置は、封止樹脂４２を形成するために注入した樹脂の流動を金ワイヤ５４、５６に対してブロックする位置にされている。具体的には、流動樹脂に対し、金ワイヤ５４、５６の上流側にアルミワイヤ５０が位置することにより、ゲートＧ２からの流動樹脂が金ワイヤ５４、５６に直接に到達して金ワイヤ５４、５６を変形させることは回避される構造になっている。パワー素子４８および制御ＩＣ５２の上記所定位置は、このような回避がなされるように配慮して設定された位置である。   The arrangement position of the aluminum wire 50 is set to a position where the flow of the resin injected to form the sealing resin 42 is blocked with respect to the gold wires 54 and 56. Specifically, the aluminum wire 50 is positioned on the upstream side of the gold wires 54 and 56 with respect to the flowing resin, so that the flowing resin from the gate G2 reaches the gold wires 54 and 56 directly, Deformation of 56 is avoided. The predetermined positions of the power element 48 and the control IC 52 are positions set in consideration of such avoidance.

（作用、効果）
以下、本実施形態の作用、効果を説明する。本実施形態では、樹脂封止する際に用いる金型のゲートＧ２は、流動樹脂にとって上流端側の金型壁の中央位置に開口している。本実施形態では、パワー素子４８および制御ＩＣ５２を基板４６上に配置する際、基板４６を金型内に配置したときにゲートＧ２に近い側となる所定位置にパワー素子１８を配置し、基板４６を金型内に配置したときにゲートＧ２からパワー素子１８を越えた位置となる所定位置に制御ＩＣ２２を配置する。 (Function, effect)
Hereinafter, the operation and effect of the present embodiment will be described. In the present embodiment, the mold gate G2 used for resin sealing is opened at the center position of the mold wall on the upstream end side for the fluid resin. In this embodiment, when the power element 48 and the control IC 52 are disposed on the substrate 46, the power element 18 is disposed at a predetermined position on the side closer to the gate G2 when the substrate 46 is disposed in the mold. The control IC 22 is disposed at a predetermined position that is a position beyond the power element 18 from the gate G2 when is placed in the mold.

次に、制御ＩＣ５２とリード４４ａ〜ｅとをそれぞれ金ワイヤ５４ａ〜ｅで接続するとともに、パワー素子４８と配線４９とをアルミワイヤ５０で接続するワイヤ接続工程を行う。このワイヤ接続工程では、上述したように、アルミワイヤ５０の配置位置を、樹脂封止するために注入した樹脂の流動を金ワイヤ５４、５６に対してブロックする位置とする。   Next, the control IC 52 and the leads 44a to 44e are connected with the gold wires 54a to 54e, respectively, and the wire connecting step for connecting the power element 48 and the wiring 49 with the aluminum wire 50 is performed. In this wire connection process, as described above, the aluminum wire 50 is disposed at a position where the flow of the resin injected for sealing the resin is blocked with respect to the gold wires 54 and 56.

その後、金型内に基板４６をセットし、樹脂注入して、パワー素子４８、アルミワイヤ５０、制御ＩＣ５２、金ワイヤ５４、５６、および、配線４９を樹脂封止する封止工程を行う。   Thereafter, a substrate 46 is set in the mold, and resin injection is performed, and a sealing process for resin-sealing the power element 48, the aluminum wire 50, the control IC 52, the metal wires 54 and 56, and the wiring 49 is performed.

この封止工程では、ゲートＧ２から注入された流動性の樹脂は、キャビティ内で制御ＩＣ５２上に到達しても、そのまま直接に金ワイヤ５４、５６に向けて流れることはアルミワイヤ５０によって防止され、アルミワイヤ５０の両端部まで回り込んでから流れるように流動方向が変更される。従って、金ワイヤ５４、５６が流動樹脂によって変形していわゆるつぶれが生じることは、大きく防止される。   In this sealing process, even if the fluid resin injected from the gate G2 reaches the control IC 52 in the cavity, it does not flow directly toward the gold wires 54 and 56 by the aluminum wire 50. The flow direction is changed so as to flow after wrapping around both ends of the aluminum wire 50. Therefore, it is greatly prevented that the gold wires 54 and 56 are deformed by the flowing resin and so-called crushing occurs.

以上のように、本発明に係るパワー半導体モジュールおよびその製造方法では、アルミワイヤの配置位置が、封止樹脂を形成するために注入した樹脂の流動を金ワイヤに対してブロックする位置にされているので、制御ＩＣに接続された金ワイヤの変形を抑えることができるパワー半導体モジュールおよびその製造方法として用いるのに好適である。   As described above, in the power semiconductor module and the manufacturing method thereof according to the present invention, the aluminum wire is disposed at a position where the flow of the resin injected to form the sealing resin is blocked with respect to the gold wire. Therefore, it is suitable for use as a power semiconductor module capable of suppressing deformation of the gold wire connected to the control IC and a method for manufacturing the power semiconductor module.

１０ パワー半導体モジュール
１２ 封止樹脂
１４ａ リード（電力供給部）
１４ｃ〜ｆ リード
１６ 基板
１８ パワー素子
２０ｐ 第１アルミワイヤ
２０ｑ 第２アルミワイヤ
２２ 制御ＩＣ
２４ｃ〜ｆ 金ワイヤ
１８ｓ 側部
１８ｋ ＩＣ側上流角部
１８ｊ 対角側角部
４２ 封止樹脂
４６ 基板
４８ パワー素子
４９ 配線
５０ アルミワイヤ
５２ 制御ＩＣ
５４ａ〜ｅ 金ワイヤ 10 Power Semiconductor Module 12 Sealing Resin 14a Lead (Power Supply Unit)
14c to f Lead 16 Substrate 18 Power element 20p First aluminum wire 20q Second aluminum wire 22 Control IC
24c to f Gold wire 18s Side portion 18k IC side upstream corner portion 18j Diagonal side corner portion 42 Sealing resin 46 Substrate 48 Power element 49 Wiring 50 Aluminum wire 52 Control IC
54a-e Gold wire

Claims (2)

基板上の所定位置に配置されたパワー素子と、
前記パワー素子と前記パワー素子に電力を供給する電力供給部とを接続するアルミワイヤと、
前記基板上の所定位置に配置された制御ＩＣと、
前記制御ＩＣと前記基板のリードとを接続する金ワイヤと、
を封止樹脂内に備え、
前記アルミワイヤの配置位置が、前記封止樹脂を形成するために注入した樹脂の流動を前記金ワイヤに対してブロックする位置にされており、
前記アルミワイヤが、前記制御ＩＣに近い前記パワー素子の側部の角部のうち前記流動の上流側のＩＣ側上流角部に接続された第１アルミワイヤと、前記ＩＣ側上流角部に対して対角となる対角側角部に接続された第２アルミワイヤと、で構成され、
前記封止樹脂を形成するために注入した樹脂が、前記ＩＣ側上流角部で前記第１アルミワイヤに当たって前記対角側角部に向けて流れることを特徴とするパワー半導体モジュール。 A power element disposed at a predetermined position on the substrate;
An aluminum wire connecting the power element and a power supply unit for supplying power to the power element;
A control IC disposed at a predetermined position on the substrate;
A gold wire connecting the control IC and the substrate lead;
In the sealing resin,
The arrangement position of the aluminum wire is a position where the flow of the resin injected to form the sealing resin is blocked with respect to the gold wire ,
The aluminum wire is connected to the first aluminum wire connected to the upstream side corner of the IC on the upstream side of the flow among the side corners of the power element close to the control IC, and the upstream side corner of the IC side. And a second aluminum wire connected to the diagonal corner that is diagonal,
The power semiconductor module , wherein the resin injected to form the sealing resin strikes the first aluminum wire at the IC-side upstream corner and flows toward the diagonal-side corner . 前記第１アルミワイヤの長さが、前記第２アルミワイヤに比べて長いことを特徴とする請求項１記載のパワー半導体モジュール。 The power semiconductor module according to claim 1 , wherein a length of the first aluminum wire is longer than that of the second aluminum wire.
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