JP6021695B2 - Semiconductor device manufacturing method and semiconductor device manufacturing apparatus - Google Patents

Description

The present invention relates to a manufacturing apparatus for a manufacturing method and a semi-conductor device of the semiconductor device, more particularly, to apparatus for manufacturing a manufacturing method and a semi-conductor device of the semiconductor device to be sealed by using a mold.

  In general, a semiconductor device is sealed with a sealing body made of resin for the purpose of physically and chemically protecting a semiconductor element and other components necessary for the semiconductor device. Stopped and formed.

  At this time, in the method of manufacturing a semiconductor device, prior to sealing, the semiconductor element, a cooling body for quickly dissipating heat generated during operation of the semiconductor element, and insulation that insulates the semiconductor element from the cooling body. A board etc. are connected by soldering etc. Furthermore, the semiconductor element and the lead frame connected to the external electrode when the semiconductor device is formed are connected in advance by a wire (for example, a bonding wire formed by bonding).

  After that, the sealing target material made of the semiconductor element or the like formed in this manner is placed inside the mold and then sealed by introducing a material to be a sealing body into the mold. ing.

  In general, metals such as gold (Au), copper (Cu), and aluminum (Al) are used as materials constituting such wires. In general, the diameter of the wire is as thin as several tens of micrometers.

  For this reason, when the resin is introduced into the mold in which the material to be sealed is disposed, the semiconductor element pressed by the resin flowing in the mold moves from a predetermined position to deform the wire. There is.

  Moreover, the wire itself may be pressed by the resin flowing inside the mold, and the wire may be deformed. In these cases, a short circuit may occur when the wires are disconnected or when the wires contact each other.

  For the purpose of suppressing the deformation of the wire due to the movement of the semiconductor element, Japanese Patent Application Laid-Open No. 2006-13527 discloses indirect with a chip stator in order to suppress the deformation of the wire caused by the semiconductor chip being pressed and moved by the resin. In particular, a method for manufacturing a semiconductor device in which a semiconductor chip is fixed to a mold is disclosed.

  Japanese Patent Laid-Open No. 2003-174053 discloses a chip stator that indirectly fixes a semiconductor chip and a wire that is in contact with and fixed to the wire for the purpose of suppressing deformation of the wire due to the wire itself being pressed by the resin. A method of manufacturing a semiconductor device is disclosed in which a wire stator is protruded from one of molds, a semiconductor chip and a wire are fixed to the mold, and then a resin is injected into the mold.

JP 2006-13527 A JP 2003-174053 A

  However, in the method disclosed in Japanese Patent Laid-Open No. 2006-13527, although the semiconductor chip is fixed to the mold by the chip stator, the wire is pressed by the resin, so that deformation of the wire cannot be sufficiently suppressed. .

  Further, in the method disclosed in Japanese Patent Application Laid-Open No. 2003-174053, since the wire is fixed to the mold using the wire stator that directly contacts the apex bending portion of the wire, the tip end portion of the wire stator is the apex bending of the wire. It is necessary to be molded along the shape. Therefore, it is necessary to prepare a plurality of types of wire stators in a semiconductor device (a material to be sealed) in which a plurality of wires having different wire layouts (for example, the shape and height of the apex curved portion) are formed. . Furthermore, in this case, it is necessary to control the degree of contact for each individual wire stator in order to suppress deformation of each wire due to contact with the wire stator, which is not easy.

  In addition, when the wire layout is changed, the wire stator cannot properly fix the wire unless the additional work corresponding to the wire layout is performed, and the deformation of the wire cannot be suppressed.

  The present invention has been made to solve the above-described problems. SUMMARY OF THE INVENTION A main object of the present invention is to provide a method for manufacturing a semiconductor device capable of suppressing deformation of the wire easily and at low cost in a semiconductor device (sealing target material) in which a plurality of wires having different wire layouts are formed. Is to provide.

A method for manufacturing a semiconductor device according to the present invention is a method for manufacturing a semiconductor device in which a sealing target material including a semiconductor element and a lead frame connected by a wire is sealed with a sealing body. A step of disposing a sealing target material, a step of disposing a rectifying member inside the mold so as not to contact the wire, and a state in which the rectifying member is disposed to form a sealing body inside the mold And a step of sealing the material to be sealed with a sealing body by solidifying the material after introducing the fluid material. In the step of arranging the rectifying member, the rectifying member is arranged so as to extend from the inner wall of the mold, and the distance from the inner wall to the tip of the rectifying member is longer than the distance from the inner wall to the wire. The rectifying member is arranged so that the surface of the rectifying member is along the wire.
A method for manufacturing a semiconductor device according to the present invention is a method for manufacturing a semiconductor device in which a sealing target material including a semiconductor element and a lead frame connected by a wire is sealed with a sealing body. A step of disposing a sealing target material, a step of disposing a rectifying member inside the mold so as not to contact the wire, and a state in which the rectifying member is disposed to form a sealing body inside the mold And a step of sealing the material to be sealed with a sealing body by solidifying the material after introducing the fluid material. In the step of arranging the rectifying member, the rectifying member is arranged so as to extend from the inner wall of the mold, and the distance from the inner wall to the tip of the rectifying member is longer than the distance from the inner wall to the wire. In the step of arranging the rectifying member, the rectifying member is arranged at a position farther from the wire as viewed from the injection port formed in the mold so that the material is introduced into the mold in the sealing step. The rectifying member is disposed at a position where the wire pressed and deformed by the material introduced from the inlet into the mold contacts.
A method for manufacturing a semiconductor device according to the present invention is a method for manufacturing a semiconductor device in which a sealing target material including a semiconductor element and a lead frame connected by a wire is sealed with a sealing body. A step of disposing a sealing target material, a step of disposing a rectifying member inside the mold so as not to contact the wire, and a state in which the rectifying member is disposed to form a sealing body inside the mold And a step of sealing the material to be sealed with a sealing body by solidifying the material after introducing the fluid material. In the step of arranging the rectifying member, the rectifying member is arranged so as to extend from the inner wall of the mold, and the distance from the inner wall to the tip of the rectifying member is longer than the distance from the inner wall to the wire. In the step of arranging the rectifying member, the rectifying member is arranged so that the material flows parallel to the wire when the material is introduced into the mold in the sealing step.
A semiconductor device manufacturing apparatus of the present invention is a semiconductor device manufacturing apparatus in which a sealing target material including a semiconductor element and a lead frame connected by a wire is sealed with a sealing body, the sealing target material A rectifying member configured to be movable between a mold in which a space for arranging the mold is formed, a position extending inside the mold, and a position retracted from the inside of the mold to the outside; and a rectifying member And a drive unit that controls movement of When the material to be sealed is placed inside and the rectifying member is moved to a position extending from the inner wall of the mold to the inside, the rectifying member does not contact the wire and extends from the inner wall to the tip of the rectifying member. Is longer than the distance from the inner wall to the wire. And a rectification member is arrange | positioned so that the surface of a rectification member may follow a wire.
A semiconductor device manufacturing apparatus of the present invention is a semiconductor device manufacturing apparatus in which a sealing target material including a semiconductor element and a lead frame connected by a wire is sealed with a sealing body,
A rectifying member configured to be movable between a mold in which a space for arranging a sealing target material is formed, a position extending inside the mold, and a position retracted from the inside of the mold to the outside. And a drive unit that controls movement of the rectifying member. When the material to be sealed is placed inside and the rectifying member is moved to a position extending from the inner wall of the mold to the inside, the rectifying member does not contact the wire and extends from the inner wall to the tip of the rectifying member. Is longer than the distance from the inner wall to the wire. The rectifying member is arranged so that the material flows parallel to the wire when the fluid material to be a sealing body is introduced into the mold.

  Here, the “inside of the mold” refers to a region inside the inner wall of the mold surrounded by the inner wall of the mold. Further, the “distance from the inner wall to the wire” refers to the shortest distance between the inner wall and the wire, in other words, the distance from the inner wall to the top of the wire.

  ADVANTAGE OF THE INVENTION According to this invention, it can suppress that the said material deform | transforms a wire by rectifying the material which should become a sealing body, without a rectifying member fixing a wire. As a result, even in a semiconductor device (a material to be sealed) in which a plurality of wires having different shapes are formed, deformation of the wire can be suppressed easily and at low cost.

1 is a cross-sectional view of a semiconductor device according to a first embodiment. 1 is a sectional view of a semiconductor device manufacturing apparatus according to a first embodiment. 1 is a top view of a semiconductor device manufacturing apparatus according to a first embodiment. 3 is a flowchart showing a method for manufacturing the semiconductor device according to the first embodiment. It is a figure which shows the modification of FIG. FIG. 6 is a cross-sectional view of a semiconductor device manufacturing apparatus according to a second embodiment. FIG. 6 is a top view of a semiconductor device manufacturing apparatus according to a second embodiment. It is a figure which shows the modification of FIG. FIG. 10 is a cross-sectional view of a modification of the semiconductor device according to the first and second embodiments.

Embodiments of the present invention will be described below with reference to the drawings.
(Embodiment 1)
First, the semiconductor device 10 according to the first embodiment of the present invention will be described with reference to FIG. Semiconductor device 10 according to the present embodiment includes semiconductor elements 1a and 1b, lead frames 2a and 2b connected to external electrodes, and wires that electrically connect semiconductor elements 1a and 1b and lead frames 2a and 2b. 3a, 3b, the electrode 4 on which the semiconductor elements 1a, 1b are mounted, the insulating sheet 6 connected to the electrode 4 through the cooling body 5, the semiconductor elements 1a, 1b, part of the lead frames 2a, 2b, A sealing body 7 that covers the wires 3a and 3b, the electrode 4, the cooling body 5, and a part of the insulating sheet 6 is provided.

  The semiconductor element constituting the semiconductor device 10 according to the present embodiment is not particularly limited, but for example, an IGBT (Insulated Gate Bipolar Transistor), an IC (Integrated Circuit), a MOS (Metal Oxide Semiconductor), and a CMOS (Complementary). Metal Oxide Semiconductor) may be combined with control components such as a control IC, a control microcomputer, a MOSFET, a diode, and a resistor. The semiconductor elements 1a and 1b are arbitrary semiconductor elements constituting a predetermined circuit pattern formed on the electrode 4, and in the present embodiment, as an example, the semiconductor element 1a that is a diode and the semiconductor element 1b that is an IGBT. Including. A plurality of electrode pads (not shown) are formed on one main surface of each of the semiconductor elements 1a and 1b. The electrode pad of the semiconductor element 1a is electrically connected to the lead frame 2a through the wire 3a. The semiconductor element 1a is electrically connected to a plurality of lead frames 2a via a plurality of wires 3a. The electrode pad of the semiconductor element 1b is electrically connected to the lead frame 2b through the wire 3b. The semiconductor element 1b is electrically connected to a plurality of lead frames 2b through a plurality of wires 3b. The other main surfaces of the semiconductor elements 1a and 1b are joined to the electrode 4 via solder (not shown).

  Each of the wires 3a and 3b can have any shape, and in the present embodiment, all have a loop shape as an example. Furthermore, the lengths of the wires 3a and 3b and the dimensions in the height direction differ depending on the positional relationship between the semiconductor elements 1a and 1b and the lead frames 2a and 2b, respectively. Here, the length direction of the wires 3a and 3b refers to an electrode pad (bonding portion) on the semiconductor elements 1a and 1b and a portion (bonding portion) where the wires 3a and 3b on the lead frames 2a and 2b are bonded. The direction of the straight line to be connected is indicated, and the height direction of the wires 3a and 3b indicates the direction of the straight line connecting the straight line and the top of the loop constituted by the wires 3a and 3b. The material constituting the wires 3a and 3b can be any material that has conductivity and can be formed as a bonding wire, such as Au, Cu, and Al. The diameters of the wires 3a and 3b are several μm or more and several hundreds μm or less.

  In the electrode 4, one surface holds the semiconductor elements 1a and 1b, and the other surface is joined to the cooling body 5 by, for example, ultrasonic welding. The material constituting the cooling body 5 is a material with high heat dissipation, and for example, a metal such as copper or aluminum may be used. The insulating sheet 6 has electrical insulation and is made of, for example, a ceramic substrate.

  The sealing body 7 seals the sealing target material 8 in which the semiconductor elements 1a and 1b, the lead frames 2a and 2b, the wires 3a and 3b, the electrode 4, the cooling body 5 and the insulating sheet 6 are configured as described above. Stop. The material to be the sealing body 7 has electrical insulation. In this Embodiment, the sealing body 7 is comprised with the epoxy resin as an example. From the semiconductor device in which the sealing target material 8 is sealed with the sealing body 7, a part of the lead frames 2a and 2b and a part of the copper foil (not shown) under the insulating sheet 6 are exposed. .

  Next, with reference to FIG. 2 and FIG. 3, the semiconductor device manufacturing apparatus 100 according to the present embodiment will be described. FIG. 3 is a view for explaining the relationship between the rectifying members 30a and 30b and the wires 3a and 3b when FIG. 2 is viewed from above. In FIG. 3, the side of the surface connected to the wires 3a and 3b in the semiconductor elements 1a and 1b is the upper side, and the upper die 21 and the drive unit 40 are not shown. The semiconductor device manufacturing apparatus 100 according to the present embodiment includes a mold 20, rectifying members 30 a and 30 b, and a drive unit 40.

  The mold 20 includes an upper mold 21 and a lower mold 22. The upper mold 21 and the lower mold 22 are provided so as to form an interior (space) 23 that defines the outer shape of the sealing body 7 in the semiconductor device when the mold 20 is overlapped with each other. The upper mold 21 is formed with through holes 24a and 24b that allow rectifying members 30a and 30b, which will be described later, to move from the inner wall 21a to the inside 23 or from the inner wall 21a to the outside. At this time, the through holes 24a and 24b prevent the wires 3a and 3b constituting the sealing target material 8 from coming into contact with rectifying members 30a and 30b, which will be described later, when the sealing target material 8 is arranged in the lower mold 22. Is provided. Here, the fact that the wires 3a, 3b and the rectifying members 30a, 30b do not contact each other means that the rectifying members 30a, 30b and the wires 3a, It does not exclude that 3b does not contact, and does not exclude that the rectification | straightening members 30a and 30b and the wires 3a and 3b contact in the process of sealing. Further, the mold 20 is formed with an injection port 25 for introducing a material (an epoxy resin in the present embodiment) to be a sealing body into the interior 23 of the mold 20 on the side surface, for example. . The mold 20 is provided with a heating mechanism and a pressure mechanism.

  The rectifying members 30 a and 30 b are provided so as not to contact the wires 3 a and 3 b of the sealing target material 8. Furthermore, the rectifying members 30 a and 30 b have a plate shape having tips 31 a and 31 b located on the lower mold 22 side, and are provided so as to be movable relative to the mold 20. Specifically, the rectifying members 30a and 30b pass through the through holes 24a and 24b provided in the upper mold 21 and extend to the inside 23 of the mold 20 and recede from the inside 23 of the mold 20 to the outside. It is configured to be movable between the positions. Further, the straightening members 30a and 30b have a distance h1 from the inner wall 21a to the tips 31a and 31b of the straightening members 30a and 30b when the sealing target material 8 is disposed in the interior 23 of the mold 20. It is provided so that it can extend longer than the distance h2 to 3a, 3b. That is, as described above, each of the rectifying members 30a and 30b is provided with at least one side along the direction in which the through holes 24a and 24b extend longer than the distance h2.

  The other side extending in the direction intersecting the one side in the rectifying members 30a and 30b may be provided to have an arbitrary length. For example, the length of the other side of the rectifying members 30a and 30b is the length of the wires 3a and 3b (the electrode pads (bonding portions) on the semiconductor elements 1a and 1b and the wires 3a and 3b on the lead frames 2a and 2b. It is good also as about 1/2 of the distance (the distance with the part (bonding part) where) was joined. Preferably, it is determined in advance by performing a resin flow simulation using a computer. The thickness of the rectifying members 30a and 30b (the thickness of the rectifying members 30a and 30b in the direction perpendicular to the surface (side surface) defined by the one side and the other knitting) is not in contact with the adjacent wires 3a and 3b. In this case, the thickness may be any thickness, but a thinner one is preferable. By doing in this way, the volume of rectification | straightening member 30a, 30b can be made small. Details will be described later.

  Further, at this time, the rectifying members 30a and 30b are arranged at positions farther from the wires 3a and 3b when viewed from the inlet 25 provided in the mold 20, and the surfaces of the rectifying members 30a and 30b are It is comprised along the wires 3a and 3b. That is, as described above, the region that is provided longer than the distance h2 on one side of the rectifying members 30a and 30b is viewed from the injection port 25 when the rectifying members 30a and 30b are extended into the interior 23 of the mold 20. It arrange | positions along the length direction of wire 3a, 3b with respect to the partial area | region which is located in the side farther than wires 3a, 3b and includes the top part of wires 3a, 3b.

  The rectifying members 30a and 30b are provided so as to be retractable from the inside 23 to the outside through the inner wall 21a. Further, the material constituting the rectifying members 30a and 30b can be any material as long as it does not show reactivity with the material to be the sealing body, but preferably the same material as the mold 20 is used. Or a material having a linear expansion coefficient close to that of the material constituting the mold 20.

  The drive unit 40 opens and closes the upper mold 21 and the lower mold 22 and moves the rectifying members 30a and 30b (a position extended to the inside 23 of the mold 20 and a position retracted from the inside 23 of the mold 20 to the outside). Move between). The drive method of the drive unit 40 can be any method, for example, hydraulic pressure, servo motor, compressed air, or the like. The mold 20 may be provided with an ejector pin (not shown), and the drive unit 40 may be configured to drive the ejector pin.

  Next, a method for manufacturing a semiconductor device according to the present embodiment will be described with reference to FIGS. In the method for manufacturing a semiconductor device according to the present embodiment, a sealing target material 8 including semiconductor elements 1a and 1b and lead frames 2a and 2b connected by wires 3a and 3b is sealed by a sealing body 7. This is a method for manufacturing a semiconductor device. In the manufacturing method of the semiconductor device according to the present embodiment, the step of placing the sealing target material 8 in the interior 23 of the mold 20 (S10) and the wires 3a and 3b are not in contact with the interior 23 of the mold 20. A flowable material (not shown) to be a sealing body was introduced into the interior 23 of the mold 20 in a state in which the flow regulating members 30a and 30b are disposed (S20) and the flow straightening members 30a and 30b are disposed. Then, the process (S30) of sealing the sealing target material 8 with a sealing body by solidifying the material is provided.

  In the step (S10), the sealing target material 8 and the mold 20 are prepared in advance. In the step (S10), the sealing target material 8 is arranged at a predetermined position on the lower mold 22. Thereafter, the upper mold 21 is fitted to the lower mold 22 by the driving unit 40, so that the sealing target material 8 is arranged in the interior 23 of the mold 20. At this time, the sealing target material 8 is positioned so that the wires 3a and 3b of the sealing target material 8 and the through holes 24a and 24b of the upper mold 21 do not overlap when viewed in plan.

  Next, in the step (S20), the rectifying members 30a and 30b are arranged so as to extend from the inner wall 21a of the upper mold 21 to the inside 23 through the through holes 24a and 24b. At this time, the rectifying members 30a and 30b are driven by the drive unit 40 so that the distance h1 from the inner wall 21a to the tips 31a and 32a of the rectifying members 30a and 30b is longer than the distance h2 from the inner wall 21a to the wires 3a and 3b. Controlled placement.

  As described above, since the wires 3a and 3b and the through-hole wires 24a and 24b are arranged so as not to overlap when viewed in plan, in the present step (S20), the drive unit 40 causes the inner wall 21a of the upper mold 21 to move from the inner wall 21a. The straightening members 30a and 30b arranged to extend do not come into contact with the wires 3a and 3b of the sealing target material 8 arranged in the interior 23 of the mold 20 in the previous step (S10). Further, the rectifying members 30a and 30b are disposed at positions farther from the wires 3a and 3b when viewed from the injection port 25, and the surfaces of the rectifying members 30a and 30b are arranged along the length direction of the wires 3a and 3b.

  Next, in the step (S30), first, in a state where the rectifying members 30a and 30b are arranged in the previous step (S20), a fluid material (this embodiment) to be a sealing body inside the mold 20 In the embodiment, epoxy resin (hereinafter referred to as resin) is introduced (step (S31)). As shown in FIG. 3, the resin is introduced in the direction of arrow A from the injection port 25. At this time, the resin flows toward the sealing target material 8 along the inflow direction from the injection port 25, and thus presses the wires 3a and 3b. As a result, the wires 3a and 3b are deformed in a direction in which the wires are pressed by the resin (a linear direction from the injection port 25 toward the wires 3a and 3b). However, since the rectifying members 30a and 30b are arranged at positions farther from the wires 3a and 3b when viewed from the inlet 25, the wires 3a and 3b are deformed until they contact the rectifying members 30a and 30b. The deformation can be suppressed by being supported by the rectifying members 30a and 30b.

  Further, at this time, since the surfaces of the rectifying members 30a and 30b are arranged so that the surfaces thereof are along the length direction of the wires 3a and 3b, the resin introduced into the inside 23 of the mold 20 reaches the rectifying members 30a and 30b. Then, it will flow along the surface of rectification members 30a and 30b. For this reason, the resin flows in parallel with the length direction of the wires 3a and 3b. When the resin flows in the length direction of the wires 3a and 3b, since the stress received from the resin is smaller than when the resin flows in a direction perpendicular to the length direction when viewed from the top surface, the wires 3a and 3b are more effective. In particular, the deformation of the wires 3a and 3b can be suppressed.

  In the step (S31), after introducing the resin into the interior 23 of the mold 20 without a gap (or from the middle of the introduction), the rectifying members 30a and 30b are retracted from the interior 23 to the outside from the inner wall 21a. In the region where the rectifying members 30a and 30b are arranged, after the rectifying members 30a and 30b are retracted, the resin flows so as to fill the region from the surrounding regions. In this case, additional resin may be injected into the interior 23 of the mold 20. At this time, the wires 3a and 3b are pressed by the resin so that the wires 3a and 3b are attracted to the region where the rectifying members 30a and 30b are arranged. The degree of pressing at this time depends on the volume of the rectifying members 30a and 30b. . Therefore, as described above, the flow straightening members 30a and 30b are formed in a plate shape so that the volume thereof is as small as possible, and after the flow straightening members 30a and 30b are retracted, the resin corresponding to the volume of the flow straightening members 30a and 30b. The wire 3a, 3b can be prevented from being deformed even when the wire flows toward the region. As described above, an amount of resin corresponding to the volume of the rectifying members 30a and 30b needs to be additionally introduced. Preferably, the resin is introduced while the rectifying members 30a and 30b are retracted. Thereby, it can suppress that the processing time of a process (S30) extends.

  Next, in the step (S30), after the step (S31), the resin is heated and cured (step (S32)). Thereby, the semiconductor device 10 in which the resin formed so as to cover the sealing target material 8 is molded as a sealing body can be obtained.

  As described above, according to the semiconductor device manufacturing apparatus and the semiconductor device manufacturing method according to the present embodiment, the rectifying members 30a and 30b are arranged in the step of arranging the rectifying members 30a and 30b (S20). The distance h1 from the inner wall 21a to the tips 31a, 31b of the rectifying members 30a, 30b is arranged to be longer than the distance h2 from the inner wall to the wires 3a, 3b so as not to contact 3b. By arranging the rectifying members 30a and 30b in this way, the rectifying members 30a and 30b can rectify the material so as to suppress the resin from deforming the wires 3a and 3b in the sealing step. As a result, since the deformation of the wires 3a and 3b can be suppressed, it is possible to prevent a short circuit due to contact between the wires and a disconnection of the wires.

  Further, since the rectifying members 30a and 30b are arranged at positions farther from the wires 3a and 3b when viewed from the injection port 25, the wires 3a and 3b are pressed by the resin in the direction from the injection port 25 to the wires 3a and 3b. Even when deformed, contact between the wires 3a and 3b can be suppressed. Further, at this time, since the rectifying members 30a and 30b are disposed between the plurality of wires 3a and 3b, it is possible to prevent the wires 3a and 3b from being deformed and coming into contact with the adjacent wires 3a and 3b.

  In the present embodiment, the drive unit 40 controls the plurality of rectifying members 30a and 30b in a lump, but is not limited thereto. With reference to FIG. 5, you may provide the drive parts 40a and 40b in each of the rectification | straightening members 30a and 30b. If it does in this way, since rectification members 30a and 30b can be moved individually, in the process (S31), the flow direction of resin can be controlled more finely.

  In the present embodiment, the plurality of wires 3a and 3b on the sealing target material 8 may have different loop heights. For example, referring to FIG. 5, the loop height of wire 3b may be formed lower than the loop height of wire 3a. At this time, the distance h2a from the inner wall 21a to the wire 3a is shorter than the distance h2b from the inner wall 21a to the wire 3b. In this case, the rectifying members 30a and 30b are connected from the inner wall 21a to the tips 31a and 31b of the rectifying members 30a and 30b, rather than the distance h2b from the inner wall 21a to the wire 3b having the lowest loop height among the plurality of wires 3a and 3b. It suffices if the distance h1 is long. In this way, the deformation of the wires 3a and 3b can be suppressed even if the rectifying members 30a and 30b having the same shape are used under the same driving conditions regardless of the loop shapes of the wires 3a and 3b.

  Moreover, in this Embodiment, the shape of the rectification | straightening members 30a and 30b with respect to the metal mold | die 20 and the sealing target material 8, arrangement | positioning location, and the timing of a movement (retreat) are determined by simulating the resin flow by computer beforehand. It is preferable. Thereby, the deformation | transformation of the wires 3a and 3b by resin flow can be suppressed more effectively.

(Embodiment 2)
The second embodiment of the present invention will be described below with reference to FIGS. FIG. 7 is a view for explaining the relationship between the rectifying members 30c and 30d and the wires 3a and 3b when FIG. 6 is viewed from above. In FIG. 7, the side of the surface connected to the wires 3a and 3b in the semiconductor elements 1a and 1b is the upper side, and the upper die 21 and the drive unit 40 are not shown.

  The semiconductor device manufacturing apparatus and the semiconductor device manufacturing method according to the present embodiment basically have the same configuration as the semiconductor device manufacturing apparatus and the semiconductor device manufacturing method according to the first embodiment shown in FIG. However, the material (for example, epoxy resin; hereinafter referred to as resin) that the rectifying members 30c and 30d should become the sealing body in the step (30) flows perpendicularly to the length direction of the wires 3a and 3b. It is different in that it is arranged to flow in parallel to the direction while preventing this.

  The rectifying member 30d is provided so as to be disposed between the inlet 25 and the wire 3b. In this way, it is possible to prevent the resin introduced from the injection port 25 from flowing in a direction perpendicular to the length direction of the wire 3b and coming into contact with the wire 3b, thereby suppressing deformation of the wire 3b. be able to. In the step (S30), the resin introduced in the direction of arrow A from the inlet 25 comes into contact with the rectifying member 30d and is guided in the direction of arrow B.

  The rectifying member 30c is positioned in the direction of arrow B as viewed from the rectifying member 30d. The rectifying member 30c is arranged so as to contact the resin that has flowed along the rectifying member 30d in the step (S30) and to change the flow direction to the direction of arrow C or arrow D. That is, the rectifying member 30c has a surface that is located downstream of the rectifying member 30d in the resin flow direction and extends along the length direction of at least one of the wires 3a and 3b. In the step (S30), the resin can flow parallel to the length direction of the wire 3b by flowing in the direction of the arrow C. The resin can also flow in parallel with the length direction of the wire 3a by flowing in the direction of the arrow D. By doing in this way, the deformation | transformation of the wires 3a and 3b by the flow of resin can be suppressed, and there can exist an effect similar to Embodiment 1. FIG.

  Referring to FIG. 7, the rectifying members 30 c and 30 d in the present embodiment are composed of two members and each have a plate-like shape, but are not limited thereto. The resin comes into contact with the wire 3b formed adjacent to the inlet 25 and extending substantially perpendicular to the arrow A indicating the flow direction of the resin introduced from the inlet 25 from the direction of the arrow A. As long as the resin can flow in parallel with each of the length directions of the wires 3a and 3b, the rectifying member may be configured with an arbitrary number and an arbitrary number. For example, referring to FIG. 8, a rectifying member 30e may be arranged instead of the rectifying member 30c of FIG. The flow regulating member 30e may be provided in a dogleg shape as viewed from above. Specifically, the flow regulating member 30e is formed such that the surface on one end side is along the length direction of the wire 3b. Further, the surface on the other end side of the rectifying member 30e is formed along the length direction of the wire 3a different from the wire 3b. The direction in which the surface on the one end side of the rectifying member 30e extends and the direction in which the surface on the other end side extend intersect each other. Even if it does in this way, since resin can be made to flow along the length direction of wires 3a and 3b, deformation of wires 3a and 3b can be controlled.

  In the first and second embodiments described above, the cross-sectional shape shown in FIG. 2 (the cross-sectional shape of the sealing body 7 in the semiconductor device 10) of the interior 23 of the mold 20 is a hexagon, and the sealing body is formed. However, the method is not limited to these methods. The shape of the interior 23 of the mold 20 can be any shape, and the method for forming the sealing body can be any sealing method.

  Further, in the first and second embodiments described above, in the example shown in FIGS. 3, 7 and 8, the injection port 25 is provided at one place in the mold 20, but it may be provided at a plurality of places. Good. Also in this case, the same effect as in the first and second embodiments can be obtained by arranging the clear flow member 30 at a predetermined position with respect to each inlet 25 as in the first and second embodiments.

  In the first and second embodiments described above, the cooling body 5 for enhancing the cooling performance of the semiconductor device and the insulating sheet 6 for ensuring the insulation of the cooling body 5 are installed. There is no need for a semiconductor device that is not necessary, and for example, an island-type semiconductor device as shown in FIG. 9 may be used.

  Here, although there is a part which overlaps with embodiment mentioned above, the characteristic structure of this invention is enumerated.

  The method for manufacturing a semiconductor device according to the present invention is a semiconductor device in which a sealing target material 8 including semiconductor elements 1a and 1b and lead frames 2a and 2b connected by wires 3a and 3b is sealed with a sealing body. In the manufacturing method, a step of arranging a sealing target material inside the mold 20 (S10), and a step of arranging the rectifying members 30a to 30e inside the mold 20 so as not to contact the wires 3a and 3b. (S20) and a flowable material to be a sealing body in the mold 20 in a state where the rectifying members 30a to 30e are arranged, and then sealing the sealing body by solidifying the material. A step of sealing the target material 8 (S30). In the step of arranging the rectifying members 30a to 30e (S20), the rectifying members 30a to 30e are arranged to extend from the inner wall of the mold 20, and the distance h1 from the inner wall to the tip of the rectifying members 30a to 30e is from the inner wall. It is longer than the distance h2 to the wires 3a and 3b.

  Thereby, it is not necessary to prepare a plurality of rectifying members corresponding to the curved shapes of the wires 3a and 3b even for the sealing target material 8 having different shapes of the wires 3a and 3b. Furthermore, since each rectification | straightening member 30a-30e does not contact wire 3a, 3b, it is not necessary to control each independently like the conventional wire stator. In the step (S20) of arranging the rectifying members 30a to 30e, the resin deforms the wires 3a and 3b in the step of sealing (S30) by controlling and arranging the rectifying members 30a to 30e, for example, under the same conditions. Therefore, the rectifying members 30a to 30e can guide the material to be the sealing body. That is, the deformation of the wires 3a and 3b can be suppressed easily and at a lower cost than the conventional method of manufacturing a semiconductor device. As a result, a short circuit due to contact between the wires 3a and 3b or the wires 3a and 3b Can be prevented.

  In the step (S20) of arranging the rectifying members 30a to 30e, as shown in FIG. 3, the rectifying members 30a and 30b introduce a material to be a sealing body into the mold 20 in the sealing step. Therefore, it may be arranged at a position farther from the wires 3a and 3b when viewed from the injection port 25 formed in the mold 20.

  The material to be the sealing body is introduced into the interior 23 of the mold 20 from the injection port 25. For this reason, the wire 3a, 3b has flowed in the direction from the injection port 25 to the wires 3a, 3b unless there is anything that prevents the flow of the material from the injection port 25 to the wires 3a, 3b. Pressed against the material. For this reason, even when the wires 3a and 3b are pressed and deformed by the material in the direction from the injection port 25 to the wires 3a and 3b, the straightening members disposed in the pressed direction when deformed by a certain amount. Contact 30a, 30b. As a result, further deformation of the wires 3a and 3b can be suppressed.

  In the step (S20) of arranging the rectifying members 30a to 30e, the rectifying members 30a and 30b may be arranged so that the surfaces of the rectifying members 30a and 30b are along the wires 3a and 3b.

  If it does in this way, the flow direction of the material which should become a sealing body which contacted rectification members 30a and 30b can be guided along the length direction of wires 3a and 3b. The wires 3a and 3b are more effective in the case where the material flows in the length direction thereof because the material is more resistant to deformation than the case where the material flows in a direction perpendicular to the length direction when viewed from the upper surface. In particular, the deformation of the wires 3a and 3b can be suppressed.

  The sealing target material 8 includes a plurality of wires 3a and 3b, and in the step (S20) of arranging the rectifying members 30a to 30e, as shown in FIG. 3, the rectifying members 30a and 30b are between the plurality of wires 3a and 3b. May be arranged.

  If it does in this way, it can prevent that each wire 3a, 3b deform | transforms and contacts the adjacent wires 3a, 3b.

  In the step (S20) of disposing the rectifying members 30a to 30e, as shown in FIG. 6, the rectifying members 30c and 30d are made of a material to be used as a sealing body in the step of sealing (S30). When introduced into the interior, the material may be arranged to flow parallel to the wires 3a, 3b.

  In this way, when the material to be the sealing body flows in the length direction of the wires 3a and 3b, the material flows in a direction perpendicular to the length direction when viewed from the upper surface. Since the resistance to deformation is stronger (or the stress applied from the material flowing to the wires 3a and 3b is small), the deformation of the wires 3a and 3b can be more effectively suppressed.

  The mold 20 is provided with an inlet 25 for introducing a material to be a sealing body into the mold 20, and the rectifying member is interposed between the wires 3 a and 3 b and the inlet 25. The first rectifying member 30d for changing the flow direction of the material to be the sealing body introduced into the mold 20 in the step of arranging and sealing (S30), and the material whose flow direction has been changed You may include the 2nd rectification | straightening members 30c and 30e guided so that it may move in parallel with respect to the wires 3a and 3b.

  In this way, the first rectifying member 30d is in contact with the wire 3b while the material to be the sealing body introduced from the injection port 25 flows in a direction perpendicular to the length direction of the wire 3b. Can be prevented, and deformation of the wire 3b can be suppressed. The second rectifying members 30c and 30e can flow the material in parallel to the length direction of the wires 3a and 3b. As a result, the deformation of the wires 3a and 3b due to the flow of the material can be suppressed.

  The rectifying members 30a to 30e are configured to be movable between a position extended inside the mold 20 and a position retracted from the inside of the mold 20 to the outside. In the sealing step (S30) The rectifying members 30a to 30e may be moved to a retracted position according to the injection state of the material to be a sealing body inside the mold 20.

  Thereby, in the sealing step (S30), after introducing the material to be the sealing body into the inside 23 of the mold 20 without a gap, the rectifying members 30a to 30e are retreated from the inside 23 to the outside from the inner wall 21a. Thus, a semiconductor device including the sealing body 7 whose outer shape is defined by the mold 20 can be manufactured while suppressing deformation of the wires 3a and 3b.

  The semiconductor device 10 manufactured by the method for manufacturing a semiconductor device according to the present invention protects the material 8 to be sealed physically and chemically by the sealing body 7, and contacts the wires 3a and 3b or the wires 3a. Generation | occurrence | production of the disconnection etc. of 3b is suppressed.

  The semiconductor device manufacturing apparatus 100 according to the present invention is a semiconductor in which a sealing target material 8 including semiconductor elements 1a and 1b and lead frames 2a and 2b connected by wires 3a and 3b is sealed with a sealing body. This is a device manufacturing apparatus. A semiconductor device manufacturing apparatus 100 according to the present invention includes a mold 20 in which a space for placing a sealing target material 8 is formed, a position extending inside the mold 20, and an interior from the mold 20 to the outside. The rectifying members 30a to 30e are configured to be movable between the position retracted and the drive unit 40 that controls the movement of the rectifying members 30a to 30e. When the sealing target material 8 is disposed inside the mold 20 and the rectifying members 30a to 30e are moved from the inner wall 21a to the inside 23, the rectifying members 30a to 30e are connected to the wires 3a and 3b. Without contact, the distance from the inner wall 21a to the tips of the flow regulating members 30a to 30e is longer than the distance from the inner wall 21a to the wires 3a and 3b.

  Thus, after the sealing target material 8 including the semiconductor elements 1a and 1b and the lead frames 2a and 2b connected by the wires 3a and 3b is arranged inside the mold 20, the wire is placed inside the mold 20. The rectifying members 30a to 30e can be arranged so as not to contact 3a and 3b. At this time, the rectifying members 30a to 30e can be arranged so that the distance h1 from the inner wall to the tips of the rectifying members 30a to 30e is longer than the distance h2 from the inner wall to the wires 3a and 3b. In a state where the rectifying members 30a to 30e are arranged, a fluid material to be a sealing body can be introduced into the mold 20, and the wires 3a and 3b are prevented from being pressed and deformed by the material. can do. That is, by using the semiconductor device manufacturing apparatus 100 according to the present invention to seal the sealing target material 8, the obtained semiconductor device 10 can easily and lowly short-circuit or break the wires 3 a and 3 b. It can be suppressed by cost.

  Although the embodiment of the present invention has been described above, the above-described embodiment can be variously modified. The scope of the present invention is not limited to the above-described embodiment. The scope of the present invention is defined by the terms of the claims, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

  DESCRIPTION OF SYMBOLS 1a, 1b Semiconductor element, 2a, 2b Lead frame, 3a, 3b Wire, 4 Electrode, 5 Cooling body, 6 Insulating sheet, 7 Sealing body, 8 Sealing material, 10 Semiconductor device, 20 Mold, 21 Upper mold 21a inner wall, 22 lower mold, 23 inside, 24a, 24b through hole, 25 inlet, 30a, 30b, 30c, 30d, 30e rectifying member, 31a, 31b tip, 40, 40a, 40b drive unit, 100 manufacturing apparatus.

Claims (9)

A method for manufacturing a semiconductor device in which a sealing target material including a semiconductor element and a lead frame connected by a wire is sealed with a sealing body,
Arranging the sealing target material inside the mold; and
A step of arranging a rectifying member in the mold so as not to contact the wire;
After introducing the flowable material to be the sealing body into the mold with the rectifying member disposed, the material to be sealed is sealed by the sealing body by solidifying the material. A process of stopping,
In the step of arranging the rectifying member, is the rectifying member is arranged so as to extend from the inner wall of the mold, the distance from the inner wall to the tip of the rectifying member is rather long than the distance from the inner wall to the wire The method of manufacturing a semiconductor device , wherein the rectifying member is arranged so that the surface of the rectifying member is along the wire . A method for manufacturing a semiconductor device in which a sealing target material including a semiconductor element and a lead frame connected by a wire is sealed with a sealing body,
Arranging the sealing target material inside the mold; and
A step of arranging a rectifying member in the mold so as not to contact the wire;
After introducing the flowable material to be the sealing body into the mold with the rectifying member disposed, the material to be sealed is sealed by the sealing body by solidifying the material. A process of stopping,
In the step of arranging the rectifying member, the rectifying member is arranged to extend from the inner wall of the mold, and the distance from the inner wall to the tip of the rectifying member is longer than the distance from the inner wall to the wire,
In the step of arranging the rectifying member, the rectifying member is more than the wire as viewed from the inlet formed in the mold so that the material is introduced into the mold in the sealing step. Manufacture of a semiconductor device, which is arranged at a distant position , and wherein the rectifying member is arranged at a position where a wire pressed and deformed by the material introduced from the injection port into the mold contacts. Method. The method of manufacturing a semiconductor device according to claim 2 , wherein in the step of arranging the rectifying member, the rectifying member is arranged such that a surface of the rectifying member is along the wire. The sealing object material includes a plurality of the wires,
The method of manufacturing a semiconductor device according to claim 1, wherein in the step of arranging the rectifying member, the rectifying member is arranged between the plurality of wires. A method for manufacturing a semiconductor device in which a sealing target material including a semiconductor element and a lead frame connected by a wire is sealed with a sealing body,
Arranging the sealing target material inside the mold; and
A step of arranging a rectifying member in the mold so as not to contact the wire;
After introducing the flowable material to be the sealing body into the mold with the rectifying member disposed, the material to be sealed is sealed by the sealing body by solidifying the material. A process of stopping,
In the step of arranging the rectifying member, the rectifying member is arranged to extend from the inner wall of the mold, and the distance from the inner wall to the tip of the rectifying member is longer than the distance from the inner wall to the wire,
In the step of arranging the rectifying member, the rectifying member is arranged so that the material flows parallel to the wire when the material is introduced into the mold in the sealing step. It is the method of manufacturing a semi-conductor device. The mold is provided with an inlet for introducing the material into the mold,
The flow straightening member is disposed between the wire and the injection port, and changes the flow direction of the material introduced into the mold in the sealing step, and the flow The method for manufacturing a semiconductor device according to claim 5, further comprising: a second rectifying member that guides the material whose direction has been changed so as to move in parallel with the wire. The rectifying member is configured to be movable between a position extending inside the mold and a position retracted from the inside of the mold to the outside.
The semiconductor according to any one of claims 1 to 6, wherein, in the sealing step, the rectifying member is moved to the retracted position in accordance with an injection state of the material into the mold. Device manufacturing method. A semiconductor device manufacturing apparatus in which a sealing target material including a semiconductor element and a lead frame connected by a wire is sealed with a sealing body,
A mold in which a space for arranging the sealing target material is formed;
A rectifying member configured to be movable between a position extended inside the mold and a position retracted from the inside of the mold to the outside;
A drive unit for controlling the movement of the rectifying member,
When the material to be sealed is disposed in the interior and the rectifying member is moved from the inner wall of the mold to a position extending to the inside, the rectifying member is not in contact with the wire, and option increases than the distance from the distance from the inner wall to the tip of the rectifying member is the inner wall to said wire, and the surface of the straightening member along the wire, the rectifying member is disposed, a semiconductor Equipment manufacturing equipment.   A semiconductor device manufacturing apparatus in which a sealing target material including a semiconductor element and a lead frame connected by a wire is sealed with a sealing body,
  A mold in which a space for arranging the sealing target material is formed;
  A rectifying member configured to be movable between a position extended inside the mold and a position retracted from the inside of the mold to the outside;
  A drive unit for controlling the movement of the rectifying member,
  When the material to be sealed is disposed in the interior and the rectifying member is moved from the inner wall of the mold to a position extending to the inside, the rectifying member is not in contact with the wire, and The distance from the inner wall to the tip of the rectifying member is longer than the distance from the inner wall to the wire, and the rectifying member is provided with a fluid material to be the sealing body inside the mold. An apparatus for manufacturing a semiconductor device, wherein, when introduced, the material is arranged so as to flow parallel to the wire.

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