JP6065448B2 - 固体撮像装置、固体撮像装置の製造方法及び電子機器 - Google Patents
固体撮像装置、固体撮像装置の製造方法及び電子機器 Download PDFInfo
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- JP6065448B2 JP6065448B2 JP2012173188A JP2012173188A JP6065448B2 JP 6065448 B2 JP6065448 B2 JP 6065448B2 JP 2012173188 A JP2012173188 A JP 2012173188A JP 2012173188 A JP2012173188 A JP 2012173188A JP 6065448 B2 JP6065448 B2 JP 6065448B2
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14607—Geometry of the photosensitive area
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Priority Applications (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012173188A JP6065448B2 (ja) | 2012-08-03 | 2012-08-03 | 固体撮像装置、固体撮像装置の製造方法及び電子機器 |
| TW102126156A TWI637494B (zh) | 2012-08-03 | 2013-07-22 | 固態成像器件，用於製造固態成像器件之方法以及電子裝置 |
| PCT/JP2013/004534 WO2014020871A1 (en) | 2012-08-03 | 2013-07-25 | Solid-state imaging device, method for producing solid-state imaging device and electronic apparatus |
| KR1020207017435A KR102237324B1 (ko) | 2012-08-03 | 2013-07-25 | 고체 촬상 장치, 고체 촬상 장치의 제조 방법 및 전자 기기 |
| KR1020157002058A KR102126095B1 (ko) | 2012-08-03 | 2013-07-25 | 고체 촬상 장치, 고체 촬상 장치의 제조 방법 및 전자 기기 |
| US14/417,590 US9748296B2 (en) | 2012-08-03 | 2013-07-25 | Solid-state imaging device, method for producing solid-state imaging device and electronic apparatus |
| CN201380039862.9A CN104508821B (zh) | 2012-08-03 | 2013-07-25 | 固态成像装置、制造固态成像装置的方法和电子设备 |
| US15/656,873 US10229947B2 (en) | 2012-08-03 | 2017-07-21 | Solid-state imaging device, method for producing solid-state imaging device and electronic apparatus |
| US16/265,634 US10748949B2 (en) | 2012-08-03 | 2019-02-01 | Solid-state imaging device, method for producing solid-state imaging device and electronic apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012173188A JP6065448B2 (ja) | 2012-08-03 | 2012-08-03 | 固体撮像装置、固体撮像装置の製造方法及び電子機器 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014033107A JP2014033107A (ja) | 2014-02-20 |
| JP2014033107A5 JP2014033107A5 (zh) | 2015-04-09 |
| JP6065448B2 true JP6065448B2 (ja) | 2017-01-25 |
Family
ID=48949199
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012173188A Active JP6065448B2 (ja) | 2012-08-03 | 2012-08-03 | 固体撮像装置、固体撮像装置の製造方法及び電子機器 |
Country Status (6)
| Country | Link |
|---|---|
| US (3) | US9748296B2 (zh) |
| JP (1) | JP6065448B2 (zh) |
| KR (2) | KR102237324B1 (zh) |
| CN (1) | CN104508821B (zh) |
| TW (1) | TWI637494B (zh) |
| WO (1) | WO2014020871A1 (zh) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP6303803B2 (ja) * | 2013-07-03 | 2018-04-04 | ソニー株式会社 | 固体撮像装置およびその製造方法 |
| JP6166640B2 (ja) * | 2013-10-22 | 2017-07-19 | キヤノン株式会社 | 固体撮像装置、その製造方法及びカメラ |
| JP2015106621A (ja) * | 2013-11-29 | 2015-06-08 | ソニー株式会社 | 固体撮像素子および製造方法、並びに電子機器 |
| JP2015216186A (ja) * | 2014-05-09 | 2015-12-03 | ソニー株式会社 | 固体撮像装置および電子機器 |
| JP2016100347A (ja) | 2014-11-18 | 2016-05-30 | ソニー株式会社 | 固体撮像装置及びその製造方法、並びに電子機器 |
| JP6566734B2 (ja) * | 2015-06-11 | 2019-08-28 | キヤノン株式会社 | 固体撮像素子 |
| KR20170019542A (ko) * | 2015-08-11 | 2017-02-22 | 삼성전자주식회사 | 자동 초점 이미지 센서 |
| KR20180048900A (ko) * | 2015-09-30 | 2018-05-10 | 가부시키가이샤 니콘 | 촬상 소자 및 촬상 장치 |
| JP2017168566A (ja) * | 2016-03-15 | 2017-09-21 | ソニー株式会社 | 固体撮像素子、および電子機器 |
| KR102582122B1 (ko) | 2016-07-11 | 2023-09-21 | 삼성전자주식회사 | 이미지 센서 및 이를 포함하는 전자 장치 |
| JP6768394B2 (ja) * | 2016-07-29 | 2020-10-14 | 株式会社ジャパンディスプレイ | 電子機器 |
| KR102589016B1 (ko) | 2016-08-25 | 2023-10-16 | 삼성전자주식회사 | 반도체 소자 |
| KR102604687B1 (ko) * | 2017-02-01 | 2023-11-20 | 삼성전자주식회사 | 이미지 센서 및 그 제조 방법 |
| US10211244B2 (en) * | 2017-06-30 | 2019-02-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Image sensor device with reflective structure and method for forming the same |
| US10943942B2 (en) * | 2017-11-10 | 2021-03-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Image sensor device and method of forming the same |
| US11075242B2 (en) * | 2017-11-27 | 2021-07-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor devices for image sensing |
| JP7366531B2 (ja) | 2018-10-29 | 2023-10-23 | キヤノン株式会社 | 光電変換装置および機器 |
| US11244979B2 (en) * | 2019-12-19 | 2022-02-08 | Omnivision Technologies, Inc. | Deep trench isolation (DTI) structure for CMOS image sensor |
| JP7441086B2 (ja) * | 2020-03-23 | 2024-02-29 | 株式会社東芝 | 光検出器、光検出システム、ライダー装置、及び車 |
| DE112021002438T5 (de) * | 2020-04-20 | 2023-03-02 | Sony Semiconductor Solutions Corporation | Festkörperbildgebungselement und elektronische vorrichtung |
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| US20190165023A1 (en) | 2019-05-30 |
| KR102237324B1 (ko) | 2021-04-07 |
| TW201407756A (zh) | 2014-02-16 |
| KR20200074274A (ko) | 2020-06-24 |
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| WO2014020871A1 (en) | 2014-02-06 |
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